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31. 发明申请

US20110057918A1 DISPLAY DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：显示设备和电子设备
公开(公告)号：US20110057918A1
公开(公告)日：2011-03-10
申请号：US12872861
申请日：2010-08-31
申请人： Hajime Kimura , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki
发明人： Hajime Kimura , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki
IPC分类号： G09G5/00
CPC分类号： H01L29/78693 , G09G3/3648 , G09G2300/0842 , H01L27/1225 , H01L29/78618
摘要： A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.
摘要翻译：一种显示装置，包括具有存储器的像素。像素至少包括显示元件，电容器，反相器和开关。开关由保持在电容器中的信号和从逆变器输出的信号控制，使得电压被提供给显示元件。逆变器和开关可以由具有相同极性的晶体管构成。可以使用透光材料形成包括在像素中的半导体层。此外，可以使用透光导电层来形成栅电极，漏电极和电容器电极。以这种方式使用透光材料形成像素，由此显示装置可以是包括具有存储器的像素的透射显示装置。

32. 发明授权

US09349750B2 Semiconductor device and display device 有权
标题翻译：半导体器件和显示器件
公开(公告)号：US09349750B2
公开(公告)日：2016-05-24
申请号：US14077390
申请日：2013-11-12
申请人： Hiroyuki Miyake , Shunpei Yamazaki , Yoshifumi Tanada , Manabu Sato , Toshinari Sasaki , Kenichi Okazaki , Junichi Koezuka , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki , Shigeyasu Mori
发明人： Hiroyuki Miyake , Shunpei Yamazaki , Yoshifumi Tanada , Manabu Sato , Toshinari Sasaki , Kenichi Okazaki , Junichi Koezuka , Takuya Matsuo , Hiroshi Matsukizono , Yosuke Kanzaki , Shigeyasu Mori
IPC分类号： H01L27/12 , H01L29/786
CPC分类号： H01L27/1225 , H01L27/124 , H01L29/78648
摘要： A semiconductor device includes: a transistor including a gate electrode, a gate insulating film over the gate electrode, a semiconductor layer over the gate insulating film, and a source electrode and a drain electrode over the semiconductor layer; a first insulating film comprising an inorganic material over the transistor; a second insulating film comprising an organic material over the first insulating film; a first conductive film over the second insulating film and in a region overlapping with the semiconductor layer; a third insulating film comprising an inorganic material over the first conductive film; and a second conductive film over the third insulating film and in a region overlapping with the first conductive film. The absolute value of a first potential applied to the first conductive film is greater than the absolute value of a second potential applied to the second conductive film.
摘要翻译：半导体器件包括：晶体管，包括栅极电极，栅极上的栅极绝缘膜，栅极绝缘膜上的半导体层，以及半导体层上的源极和漏极; 包括晶体管上的无机材料的第一绝缘膜; 包括在所述第一绝缘膜上的有机材料的第二绝缘膜; 在所述第二绝缘膜上并且在与所述半导体层重叠的区域中的第一导电膜; 在所述第一导电膜上包括无机材料的第三绝缘膜; 以及在所述第三绝缘膜上并且在与所述第一导电膜重叠的区域中的第二导电膜。施加到第一导电膜的第一电位的绝对值大于施加到第二导电膜的第二电位的绝对值。

33. 发明授权

US09257082B2 Display device and electronic device 有权
标题翻译：显示设备和电子设备
公开(公告)号：US09257082B2
公开(公告)日：2016-02-09
申请号：US12872861
申请日：2010-08-31
申请人： Hajime Kimura , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki
发明人： Hajime Kimura , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki
IPC分类号： G09G3/36
CPC分类号： H01L29/78693 , G09G3/3648 , G09G2300/0842 , H01L27/1225 , H01L29/78618
摘要： A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.
摘要翻译：一种显示装置，包括具有存储器的像素。像素至少包括显示元件，电容器，反相器和开关。开关由保持在电容器中的信号和从逆变器输出的信号控制，使得电压被提供给显示元件。逆变器和开关可以由具有相同极性的晶体管构成。可以使用透光材料形成包括在像素中的半导体层。此外，可以使用透光导电层来形成栅电极，漏电极和电容器电极。以这种方式使用透光材料形成像素，由此显示装置可以是包括具有存储器的像素的透射显示装置。

34. 发明授权

US08936963B2 Semiconductor device and method for manufacturing the semiconductor device 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08936963B2
公开(公告)日：2015-01-20
申请号：US12720092
申请日：2010-03-09
申请人： Hiroki Ohara , Toshinari Sasaki
发明人： Hiroki Ohara , Toshinari Sasaki
IPC分类号： H01L21/00 , H01L21/02 , H01L29/786 , H01L27/12
CPC分类号： H01L21/02565 , H01L21/02554 , H01L21/02592 , H01L21/02631 , H01L21/02667 , H01L27/1225 , H01L29/7869
摘要： If an oxide semiconductor layer is crystallized by heat treatment without being covered with an inorganic insulating film, surface unevenness and the like are formed due to the crystallization, which may cause variation in electrical characteristics. Steps are performed in the following order: a second insulating film is formed on an oxide semiconductor layer over a substrate and then heat treatment is performed, instead of performing heat treatment during a period immediately after formation of the oxide semiconductor layer and immediately before formation of an inorganic insulating film including silicon oxide on the oxide semiconductor layer. The density of hydrogen included in the inorganic insulating film including silicon oxide is 5×1020/cm3 or more, and the density of nitrogen is 1×1019/cm3 or more.
摘要翻译：如果氧化物半导体层通过热处理结晶而不被无机绝缘膜覆盖，则由于结晶而形成表面不均匀等，这可能导致电特性的变化。按照以下顺序进行步骤：在衬底上的氧化物半导体层上形成第二绝缘膜，然后进行热处理，而不是在形成氧化物半导体层之后的时间段内立即进行热处理在氧化物半导体层上包含氧化硅的无机绝缘膜。包括在包含氧化硅的无机绝缘膜中的氢的密度为5×10 20 / cm 3以上，氮的密度为1×10 19 / cm 3以上。

35. 发明授权

US08916868B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08916868B2
公开(公告)日：2014-12-23
申请号：US13446016
申请日：2012-04-13
申请人： Atsuo Isobe , Toshinari Sasaki , Shinya Sasagawa , Akihiro Ishizuka
发明人： Atsuo Isobe , Toshinari Sasaki , Shinya Sasagawa , Akihiro Ishizuka
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12 , H01L27/115
CPC分类号： H01L29/66969 , H01L21/02565 , H01L21/0262 , H01L21/477 , H01L27/1156 , H01L27/1225 , H01L29/045 , H01L29/24 , H01L29/7869
摘要： A semiconductor device having a transistor including an oxide semiconductor film is disclosed. In the semiconductor device, the oxide semiconductor film is provided along a trench formed in an insulating layer. The trench includes a lower end corner portion and an upper end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, the upper end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the upper end corner portion.
摘要翻译：公开了一种具有包括氧化物半导体膜的晶体管的半导体器件。在半导体装置中，沿着形成在绝缘层中的沟槽设置氧化物半导体膜。沟槽包括具有曲率半径大于或等于20nm且小于或等于60nm的弯曲形状的下端拐角部分和上端拐角部分，并且氧化物半导体膜设置成与底面，下端角部，上端角部和沟槽的内壁面。氧化物半导体膜包括至少在上端角部上方具有基本上垂直于表面的c轴的晶体。

36. 发明授权

US08835918B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08835918B2
公开(公告)日：2014-09-16
申请号：US13608039
申请日：2012-09-10
申请人： Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
发明人： Shunpei Yamazaki , Atsuo Isobe , Toshinari Sasaki
IPC分类号： H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1218 , H01L27/1225
摘要： To provide a transistor which includes an oxide semiconductor and is capable of operating at high speed or a highly reliable semiconductor device including the transistor, a transistor in which an oxide semiconductor layer including a pair of low-resistance regions and a channel formation region is provided over an electrode layer, which is embedded in a base insulating layer and whose upper surface is at least partly exposed from the base insulating layer, and a wiring layer provided above the oxide semiconductor layer is electrically connected to the electrode layer or a part of a low-resistance region of the oxide semiconductor layer, which overlaps with the electrode layer.
摘要翻译：为了提供包括氧化物半导体并且能够高速运行的晶体管或包括晶体管的高度可靠的半导体器件，提供了包括一对低电阻区域和沟道形成区域的氧化物半导体层的晶体管在基底绝缘层上嵌入并且其上表面至少部分地从基底绝缘层露出的电极层上，并且设置在氧化物半导体层上方的布线层电连接到电极层或电极层的一部分氧化物半导体层的低电阻区域与电极层重叠。

37. 发明授权

US08748889B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08748889B2
公开(公告)日：2014-06-10
申请号：US13188992
申请日：2011-07-22
申请人： Toshinari Sasaki , Hitomi Sato , Kosei Noda , Yuta Endo , Mizuho Ikarashi , Keitaro Imai , Atsuo Isobe , Yutaka Okazaki
发明人： Toshinari Sasaki , Hitomi Sato , Kosei Noda , Yuta Endo , Mizuho Ikarashi , Keitaro Imai , Atsuo Isobe , Yutaka Okazaki
IPC分类号： H01L29/12 , H01L21/36
CPC分类号： H01L29/7869 , H01L29/66969 , H01L29/78603 , H01L29/78606
摘要： It is an object to manufacture a semiconductor device in which a transistor including an oxide semiconductor has normally-off characteristics, small fluctuation in electric characteristics, and high reliability. First, first heat treatment is performed on a substrate, a base insulating layer is formed over the substrate, an oxide semiconductor layer is formed over the base insulating layer, and the step of performing the first heat treatment to the step of forming the oxide semiconductor layer are performed without exposure to the air. Next, after the oxide semiconductor layer is formed, second heat treatment is performed. An insulating layer from which oxygen is released by heating is used as the base insulating layer.
摘要翻译：本发明的目的是制造其中包括氧化物半导体的晶体管具有常态特性，电特性波动小，可靠性高的半导体器件。首先，在基板上进行第一热处理，在基板上形成基极绝缘层，在基底绝缘层上形成氧化物半导体层，对形成氧化物半导体的工序进行第一热处理的工序在不暴露于空气的情况下执行层。接下来，在形成氧化物半导体层之后，进行第二热处理。使用通过加热而释放氧的绝缘层作为基底绝缘层。

38. 发明授权

US08344387B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08344387B2
公开(公告)日：2013-01-01
申请号：US12624888
申请日：2009-11-24
申请人： Kengo Akimoto , Toshinari Sasaki , Hideaki Kuwabara
发明人： Kengo Akimoto , Toshinari Sasaki , Hideaki Kuwabara
IPC分类号： H01L27/14 , H01L21/00
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/45 , H01L29/66742 , H01L29/786 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

39. 发明申请

US20120018727A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120018727A1
公开(公告)日：2012-01-26
申请号：US13185779
申请日：2011-07-19
申请人： Yuta Endo , Kosei Noda , Toshinari Sasaki
发明人： Yuta Endo , Kosei Noda , Toshinari Sasaki
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/66969 , H01L21/02164 , H01L21/02367 , H01L21/02565 , H01L21/02631 , H01L29/66742 , H01L29/78603 , H01L29/78618 , H01L29/7869
摘要： An insulating layer which releases a large amount of oxygen is used as an insulating layer in contact with a channel region of an oxide semiconductor layer, and an insulating layer which releases a small amount of oxygen is used as an insulating layer in contact with a source region and a drain region of the oxide semiconductor layer. By releasing oxygen from the insulating layer which releases a large amount of oxygen, oxygen deficiency in the channel region and an interface state density between the insulating layer and the channel region can be reduced, so that a highly reliable semiconductor device having small variation in electrical characteristics can be manufactured. The source region and the drain region are provided in contact with the insulating layer which releases a small amount of oxygen, thereby suppressing the increase of the resistance of the source region and the drain region.
摘要翻译：使用释放大量氧的绝缘层作为与氧化物半导体层的沟道区域接触的绝缘层，并且使用释放少量氧的绝缘层作为与源极接触的绝缘层区域和氧化物半导体层的漏极区域。通过从释放大量氧的绝缘层释放氧气，可以减少沟道区域中的氧缺乏以及绝缘层和沟道区域之间的界面态密度，从而可以降低电子变化小的高度可靠的半导体器件特性可以制造。源极区域和漏极区域设置成与释放少量氧气的绝缘层接触，从而抑制源极区域和漏极区域的电阻的增加。

40. 发明申请

US20100109003A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100109003A1
公开(公告)日：2010-05-06
申请号：US12604622
申请日：2009-10-23
申请人： Kengo Akimoto , Toshinari Sasaki
发明人： Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , G02F1/1368 , G02F1/167 , H01L27/1225 , H01L27/1248 , H01L27/1259 , H01L27/127 , H01L27/3262 , H01L29/04 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.
摘要翻译：目的是提高使用氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是抑制即使在具有改善的场效应迁移率的薄膜晶体管中，关断电流的增加。在使用氧化物半导体层的薄膜晶体管中，通过形成具有比氧化物半导体层和栅极绝缘层之间的氧化物半导体层更高的导电性和更小的厚度的半导体层，薄膜晶体管的场效应迁移率可以是可以抑制切断电流的提高。

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