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1. 发明授权

US08748887B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08748887B2
公开(公告)日：2014-06-10
申请号：US13613456
申请日：2012-09-13
申请人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
发明人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.
摘要翻译：目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是稳定薄膜晶体管的电特性。在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化，使得薄膜晶体管的电特性能够稳定。

2. 发明申请

US20110057918A1 DISPLAY DEVICE AND ELECTRONIC DEVICE 有权
标题翻译：显示设备和电子设备
公开(公告)号：US20110057918A1
公开(公告)日：2011-03-10
申请号：US12872861
申请日：2010-08-31
申请人： Hajime Kimura , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki
发明人： Hajime Kimura , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki
IPC分类号： G09G5/00
CPC分类号： H01L29/78693 , G09G3/3648 , G09G2300/0842 , H01L27/1225 , H01L29/78618
摘要： A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.
摘要翻译：一种显示装置，包括具有存储器的像素。像素至少包括显示元件，电容器，反相器和开关。开关由保持在电容器中的信号和从逆变器输出的信号控制，使得电压被提供给显示元件。逆变器和开关可以由具有相同极性的晶体管构成。可以使用透光材料形成包括在像素中的半导体层。此外，可以使用透光导电层来形成栅电极，漏电极和电容器电极。以这种方式使用透光材料形成像素，由此显示装置可以是包括具有存储器的像素的透射显示装置。

3. 发明授权

US08426868B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08426868B2
公开(公告)日：2013-04-23
申请号：US12604622
申请日：2009-10-23
申请人： Kengo Akimoto , Toshinari Sasaki
发明人： Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L21/02
CPC分类号： H01L29/7869 , G02F1/1368 , G02F1/167 , H01L27/1225 , H01L27/1248 , H01L27/1259 , H01L27/127 , H01L27/3262 , H01L29/04 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.
摘要翻译：目的是提高使用氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是抑制即使在具有改善的场效应迁移率的薄膜晶体管中，关断电流的增加。在使用氧化物半导体层的薄膜晶体管中，通过形成具有比氧化物半导体层和栅极绝缘层之间的氧化物半导体层更高的导电性和更小的厚度的半导体层，薄膜晶体管的场效应迁移率可以是可以抑制切断电流的提高。

4. 发明授权

US08318551B2 Semiconductor device and manufacturing method thereof 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08318551B2
公开(公告)日：2012-11-27
申请号：US12627204
申请日：2009-11-30
申请人： Kengo Akimoto , Toshinari Sasaki
发明人： Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L21/84 , H01L29/10 , H01L29/12
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/41733 , H01L29/66969
摘要： A gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a first source electrode layer and a first drain electrode layer over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; and a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer. A first part, a second part, and a third part of a bottom surface are in contact with the first source electrode layer, the first drain electrode layer, and the gate insulating layer respectively. A first part and a second part of the top surface are in contact with the second source electrode layer and the second drain electrode layer respectively. The first source electrode layer and the first drain electrode layer are electrically connected to the second source electrode layer and the second drain electrode layer respectively.
摘要翻译：衬底上的栅电极层; 栅电极层上的栅极绝缘层; 栅极绝缘层上的第一源极电极层和第一漏极电极层; 栅极绝缘层上的氧化物半导体层; 以及在所述氧化物半导体层上的第二源极电极层和第二漏极电极层。第一部分，第二部分和底部表面的第三部分分别与第一源极电极层，第一漏极电极层和栅极绝缘层接触。上表面的第一部分和第二部分分别与第二源极电极层和第二漏极电极层接触。第一源极电极层和第一漏极电极层分别与第二源极电极层和第二漏极电极层电连接。

5. 发明授权

US09257082B2 Display device and electronic device 有权
标题翻译：显示设备和电子设备
公开(公告)号：US09257082B2
公开(公告)日：2016-02-09
申请号：US12872861
申请日：2010-08-31
申请人： Hajime Kimura , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki
发明人： Hajime Kimura , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki
IPC分类号： G09G3/36
CPC分类号： H01L29/78693 , G09G3/3648 , G09G2300/0842 , H01L27/1225 , H01L29/78618
摘要： A display device including a pixel having a memory. The pixel includes at least a display element, a capacitor, an inverter, and a switch. The switch is controlled with a signal held in the capacitor and a signal output from the inverter so that voltage is supplied to the display element. The inverter and the switch can be constituted by transistors with the same polarity. A semiconductor layer included in the pixel may be formed using a light-transmitting material. Moreover, a gate electrode, a drain electrode, and a capacitor electrode may be formed using a light-transmitting conductive layer. The pixel is formed using a light-transmitting material in such a manner, whereby the display device can be a transmissive display device while including a pixel having a memory.
摘要翻译：一种显示装置，包括具有存储器的像素。像素至少包括显示元件，电容器，反相器和开关。开关由保持在电容器中的信号和从逆变器输出的信号控制，使得电压被提供给显示元件。逆变器和开关可以由具有相同极性的晶体管构成。可以使用透光材料形成包括在像素中的半导体层。此外，可以使用透光导电层来形成栅电极，漏电极和电容器电极。以这种方式使用透光材料形成像素，由此显示装置可以是包括具有存储器的像素的透射显示装置。

6. 发明授权

US08344387B2 Semiconductor device and method for manufacturing the same 有权
公开(公告)号：US08344387B2
公开(公告)日：2013-01-01
申请号：US12624888
申请日：2009-11-24
申请人： Kengo Akimoto , Toshinari Sasaki , Hideaki Kuwabara
发明人： Kengo Akimoto , Toshinari Sasaki , Hideaki Kuwabara
IPC分类号： H01L27/14 , H01L21/00
CPC分类号： H01L29/66969 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L27/1225 , H01L29/45 , H01L29/66742 , H01L29/786 , H01L29/78606 , H01L29/7869 , H01L29/78696
摘要： An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized.

7. 发明申请

US20100109003A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100109003A1
公开(公告)日：2010-05-06
申请号：US12604622
申请日：2009-10-23
申请人： Kengo Akimoto , Toshinari Sasaki
发明人： Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , G02F1/1368 , G02F1/167 , H01L27/1225 , H01L27/1248 , H01L27/1259 , H01L27/127 , H01L27/3262 , H01L29/04 , H01L29/24 , H01L29/42356 , H01L29/45 , H01L29/66742 , H01L29/66969 , H01L29/78618 , H01L29/78693 , H01L29/78696
摘要： An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed.
摘要翻译：目的是提高使用氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是抑制即使在具有改善的场效应迁移率的薄膜晶体管中，关断电流的增加。在使用氧化物半导体层的薄膜晶体管中，通过形成具有比氧化物半导体层和栅极绝缘层之间的氧化物半导体层更高的导电性和更小的厚度的半导体层，薄膜晶体管的场效应迁移率可以是可以抑制切断电流的提高。

8. 发明授权

US08421083B2 Semiconductor device with two oxide semiconductor layers and manufacturing method thereof 有权
标题翻译：具有两个氧化物半导体层的半导体器件及其制造方法
公开(公告)号：US08421083B2
公开(公告)日：2013-04-16
申请号：US12846556
申请日：2010-07-29
申请人： Shunpei Yamazaki , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki , Hideaki Kuwabara
发明人： Shunpei Yamazaki , Kengo Akimoto , Masashi Tsubuku , Toshinari Sasaki , Hideaki Kuwabara
IPC分类号： H01L29/04 , H01L21/00 , G02F1/135
CPC分类号： H01L33/0041 , H01L27/1214 , H01L27/1225 , H01L27/124 , H01L27/1248 , H01L29/78606 , H01L29/7869 , H01L29/78696 , H01L2924/0002 , H01L2924/00
摘要： In a bottom-gate thin film transistor using the stack of the first oxide semiconductor layer and the second oxide semiconductor layer, an oxide insulating layer serving as a channel protective layer is formed over and in contact with part of the oxide semiconductor layer overlapping with a gate electrode layer. In the same step as formation of the insulating layer, an oxide insulating layer covering a peripheral portion (including a side surface) of the stack of the oxide semiconductor layers is formed.
摘要翻译：在使用第一氧化物半导体层和第二氧化物半导体层的堆叠的底栅极薄膜晶体管中，形成作为沟道保护层的氧化物绝缘层，与氧化物半导体层的与栅电极层。在与绝缘层的形成相同的步骤中，形成覆盖氧化物半导体层的叠层的周边部分（包括侧面）的氧化物绝缘层。

9. 发明授权

US08298858B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08298858B2
公开(公告)日：2012-10-30
申请号：US13292207
申请日：2011-11-09
申请人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
发明人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L21/34
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.
摘要翻译：目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是稳定薄膜晶体管的电特性。在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化，使得薄膜晶体管的电特性能够稳定。

10. 发明授权

US08058647B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08058647B2
公开(公告)日：2011-11-15
申请号：US12614786
申请日：2009-11-09
申请人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
发明人： Hideaki Kuwabara , Kengo Akimoto , Toshinari Sasaki
IPC分类号： H01L29/786
CPC分类号： H01L29/7869 , H01L27/1225 , H01L29/04 , H01L29/24 , H01L29/458 , H01L29/4908 , H01L29/78696
摘要： An object is to increase field effect mobility of a thin film transistor including an oxide semiconductor. Another object is to stabilize electrical characteristics of the thin film transistor. In a thin film transistor including an oxide semiconductor layer, a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor is formed over the oxide semiconductor layer, whereby field effect mobility of the thin film transistor can be increased. Further, by forming a semiconductor layer or a conductive layer having higher electrical conductivity than the oxide semiconductor between the oxide semiconductor layer and a protective insulating layer of the thin film transistor, change in composition or deterioration in film quality of the oxide semiconductor layer is prevented, so that electrical characteristics of the thin film transistor can be stabilized.
摘要翻译：目的是增加包括氧化物半导体的薄膜晶体管的场效应迁移率。另一个目的是稳定薄膜晶体管的电特性。在包括氧化物半导体层的薄膜晶体管中，在氧化物半导体层上形成具有比氧化物半导体更高的导电性的半导体层或导电层，由此可以提高薄膜晶体管的场效应迁移率。此外，通过在氧化物半导体层和薄膜晶体管的保护绝缘层之间形成具有比氧化物半导体更高的导电性的半导体层或导电层，防止氧化物半导体层的组成变化或膜质量的劣化，使得薄膜晶体管的电特性能够稳定。

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