会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 32. 发明授权
    • Magneto-resistance effect type head and information reproducing apparatus
    • 垂直偏置底层和磁阻效应型头
    • US06493197B2
    • 2002-12-10
    • US09955358
    • 2001-09-18
    • Junichi ItoMichiaki KanamineHitoshi Kanai
    • Junichi ItoMichiaki KanamineHitoshi Kanai
    • G11B539
    • B82Y25/00B82Y10/00G11B5/00G11B5/3113G11B5/3903G11B5/3932G11B2005/3996
    • The present invention provides a magneto-resistance effect type head for reproducing, with a high sensitivity, information recorded at a high recording density on a recording medium while inhibiting occurrence of the Barkhausen noise, including a magneto-resistance effect element comprised of a multi-layer film containing a free magnetic layer having its magnetization direction changing in correspondence with an external magnetic field, an insulating film, a non-magnetic underlying layer formed on the insulating film, and one pair of magnetic domain-wall control layers formed on the underlying layer in its in-face direction with a predetermined spacing therebetween, for inhibiting movement of magnetic domain wall of the free magnetic layer, in such a configuration that the free magnetic layer has its both ends directly stacked on the pair of the magnetic domain-wall control layers and also has its middle part directly stacked on the underlying layer.
    • 本发明提供了一种用于以高灵敏度将以高记录密度记录在信息记录介质上的信息同时抑制巴克豪森噪声的发生的磁阻效应型磁头,包括由多声道组成的磁阻效应元件, 其包含其磁化方向与外部磁场相对应地变化的自由磁性层,绝缘膜,形成在绝缘膜上的非磁性下层,以及形成在底层上的一对磁畴壁控制层 层之间以预定的间隔在其面内方向上,用于抑制自由磁性层的磁畴壁的移动,使得自由磁性层的两端直接堆叠在一对磁畴壁上 控制层并且其中间部分直接堆叠在下层上。
    • 33. 发明授权
    • Spin valve head, production process thereof and magnetic disk device
    • 旋转阀头,其生产工艺和磁盘装置
    • US06483674B1
    • 2002-11-19
    • US09707179
    • 2000-11-06
    • Hitoshi KanaiJunichi Ito
    • Hitoshi KanaiJunichi Ito
    • G11B5127
    • B82Y25/00B82Y10/00G11B5/3163G11B5/3903G11B5/3932G11B5/3967H01F10/3268
    • A spin valve head comprises a spin valve film comprising a regular antiferromagnetic layer, a pinned magnetic layer, an intermediate layer and a free magnetic layer; a pair of electrodes arranged at both ends of the spin valve film; and a pair of exchange bias magnetic field impressing layers arranged at both ends of the free magnetic layer of the spin valve film, wherein the exchange bias magnetic field impressing layers are made of antiferromagnetic material, and the spin valve film extends over the exchange bias magnetic field impressing layers. The spin valve head is characterized in that the abutted junction region is extended so that the occurrence of Barkhausen noise can be more effectively suppressed; and the abutted junction region is stably formed without being affected by the film formation process.
    • 自旋阀头包括自旋阀膜,其包括规则反铁磁层,钉扎磁性层,中间层和自由磁性层; 布置在自旋阀膜两端的一对电极; 以及布置在自旋阀膜的自由磁性层的两端的一对交换偏置磁场施加层,其中交换偏置磁场施加层由反铁磁材料制成,并且自旋阀膜延伸超过交换偏压磁 现场打印层。 自旋阀头的特征在于,邻接接合区域延伸,从而可以更有效地抑制巴克豪森噪声的发生; 并且在不受膜形成过程的影响的情况下稳定地形成邻接接合区域。
    • 37. 发明授权
    • Method for manufacturing nonvolatile memory device
    • 非易失性存储器件的制造方法
    • US08981507B2
    • 2015-03-17
    • US13534673
    • 2012-06-27
    • Shigeki TakahashiKyoichi SuguroJunichi ItoYuichi OhsawaHiroaki Yoda
    • Shigeki TakahashiKyoichi SuguroJunichi ItoYuichi OhsawaHiroaki Yoda
    • H01L43/12
    • H01L43/12
    • According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.
    • 根据一个实施例,公开了一种用于制造包括多个存储单元的非易失性存储器件的方法。 多个存储单元中的每一个包括基底层,其包括第一电极,设置在基底层上的磁性隧道结器件和设置在磁性隧道结装置上的第二电极。 磁隧道结装置包括第一磁性层,设置在第一磁性层上的隧道势垒层,以及设置在隧道势垒层上的第二磁性层。 该方法可以包括通过将气体簇照射到第二磁性层的表面的一部分或第一磁性层的表面的一部分上来蚀刻第二磁性层的一部分和第一磁性层的一部分。
    • 38. 发明授权
    • Magnetic memory element
    • 磁记忆元件
    • US08928055B2
    • 2015-01-06
    • US13601343
    • 2012-08-31
    • Daisuke SaidaMinoru AmanoJunichi Ito
    • Daisuke SaidaMinoru AmanoJunichi Ito
    • H01L27/22G11C11/15
    • H01L43/08G11C11/161G11C11/1659H01L27/228H01L43/12
    • According to one embodiment, a magnetic memory element includes a stacked body and a conductive shield. The stacked body includes first and second stacked units. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer. The first ferromagnetic layer has a fixed magnetization in a first direction. A magnetization direction of the second ferromagnetic layer is variable in a second direction. The first nonmagnetic layer is provided between the first and second ferromagnetic layers. The second stacked unit includes a third ferromagnetic layer stacked with the first stacked unit in a stacking direction of the first stacked unit. A magnetization direction of the third ferromagnetic layer is variable in a third direction. The conductive shield is opposed to at least a part of a side surface of the second stacked unit. An electric potential of the conductive shield is controllable.
    • 根据一个实施例,磁存储元件包括堆叠体和导电屏蔽。 堆叠体包括第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和第一非磁性层。 第一铁磁层在第一方向上具有固定的磁化强度。 第二铁磁层的磁化方向在第二方向上是可变的。 第一非磁性层设置在第一和第二铁磁层之间。 第二堆叠单元包括在第一堆叠单元的层叠方向上与第一堆叠单元堆叠的第三铁磁层。 第三铁磁层的磁化方向在第三方向上是可变的。 导电屏蔽与第二堆叠单元的侧表面的至少一部分相对。 导电屏蔽层的电位是可控的。