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    • 33. 发明申请
    • Method for fabricating a semiconductor device
    • 半导体器件的制造方法
    • US20050074940A1
    • 2005-04-07
    • US10954484
    • 2004-10-01
    • Sung JungDong Kim
    • Sung JungDong Kim
    • H01L21/76H01L21/265H01L21/336H01L21/8247
    • H01L27/11521H01L21/26586
    • A method for fabricating the semiconductor device includes forming linear field oxide regions on a semiconductor substrate; forming gate oxide lines on the semiconductor substrate between the field oxide regions; forming gate lines on the field oxide regions and the gate oxide lines, the gate lines being substantially perpendicular to the field oxide regions; etching the gate oxide lines and the field oxide regions between the gate lines; and forming a self-aligned source (SAS) region by injecting impurity ions into the etched regions, the impurity ion being injected in a direction at a predetermined angle other than 90° relative to the semiconductor substrate.
    • 一种制造半导体器件的方法包括在半导体衬底上形成线性场氧化物区域; 在所述场氧化物区域之间的所述半导体衬底上形成栅极氧化物线; 在场氧化物区域和栅极氧化物线上形成栅极线,栅极线基本上垂直于场氧化物区域; 蚀刻栅极线之间的栅极氧化物线和场氧化物区域; 以及通过将杂质离子注入蚀刻区域而形成自对准源(SAS)区域,杂质离子以相对于半导体衬底的90°以外的预定角度的方向注入。
    • 35. 发明申请
    • Transflective liquid crystal display device and manufacturing method thereof
    • 半透射型液晶显示装置及其制造方法
    • US20070153171A1
    • 2007-07-05
    • US11387712
    • 2006-03-24
    • Dong Kim
    • Dong Kim
    • G02F1/1335
    • G02F1/133555G02F1/136227G02F2203/02
    • A transflective liquid crystal display device includes first and second substrates facing each other, a gate line and a data line on the first substrate, the gate and data lines intersecting each other and defining a pixel region having a transmissive region and a reflective region, a thin film transistor at an intersection between the gate line and the data line, a pixel electrode in the pixel region connected to the thin film transistor, an organic insulating layer on the second substrate, the organic insulating layer including a through-hole in the transmissive region, a reflective electrode on the organic insulating layer in the reflective region, a black matrix on the second substrate, a color filter layer on the second substrate in the pixel region, and a liquid crystal layer between the first and second substrates.
    • 半透射型液晶显示装置包括彼此面对的第一和第二基板,第一基板上的栅极线和数据线,栅极和数据线彼此交叉并且限定具有透射区域和反射区域的像素区域, 栅极线与数据线之间的交点处的薄膜晶体管,连接到薄膜晶体管的像素区域中的像素电极,第二基板上的有机绝缘层,有机绝缘层包括透射的通孔 反射区域中的有机绝缘层上的反射电极,第二基板上的黑矩阵,像素区域中的第二基板上的滤色器层以及第一和第二基板之间的液晶层。
    • 39. 发明申请
    • Nitride-based semiconductor light emitting diode
    • 氮化物半导体发光二极管
    • US20070096115A1
    • 2007-05-03
    • US11581757
    • 2006-10-17
    • Hyuk LeeIn PyeonHyun-Ju ParkHyun KimDong KimHyoun Shin
    • Hyuk LeeIn PyeonHyun-Ju ParkHyun KimDong KimHyoun Shin
    • H01L33/00H01L31/12H01L27/15H01L29/26
    • H01L33/38H01L33/20H01L33/32
    • A nitride-based semiconductor LED comprises a substrate; an n-type nitride semiconductor layer formed on the substrate; an active layer formed on a predetermined region of the n-type nitride semiconductor layer; a p-type nitride semiconductor layer formed on the active layer; a current spreading layer formed on the p-type nitride semiconductor layer; a p-electrode formed on the current spreading layer, the p-electrode having two p-type branch electrodes; and an n-electrode formed on the n-type nitride semiconductor layer on which the active layer is not formed, the n-electrode having one n-type branch electrode. The n-type branch electrode is formed so as to be inserted between two of the p-type branch electrodes, and a distance from the outermost side of a transparent electrode adjacent to the n-electrode to the p-electrode is identical at any position.
    • 氮化物系半导体LED包括基板; 在该基板上形成的n型氮化物半导体层; 形成在所述n型氮化物半导体层的预定区域上的有源层; 形成在有源层上的p型氮化物半导体层; 形成在p型氮化物半导体层上的电流扩散层; 形成在电流扩散层上的p电极,p电极具有两个p型分支电极; 以及形成在其上未形成有源层的n型氮化物半导体层上的n电极,n电极具有一个n型分支电极。 n型分支电极被形成为插入在两个p型分支电极之间,并且从与n电极相邻的透明电极的最外侧到p电极的距离在任何位置是相同的 。