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31. 发明专利

JPS6084894A MANUFACTURE OF SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS6084894A
公开(公告)日：1985-05-14
申请号：JP19250184
申请日：1984-09-17
申请人： HITACHI LTD
发明人： KURODA TAKAROU , KAJIMURA TAKASHI , KASHIWADA YASUTOSHI , UMEDA JIYUNICHI , AIKI KUNIO
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223 , H01S5/24
摘要： PURPOSE:To improve the yield by elimination of variation by a method wherein an active layer is formed while a substrate for growth is moved successively smoothly in a solution for growth. CONSTITUTION:An N-Ga1-yAlyAs (0.2

32. 发明专利

JPS6021895A PROCESS FOR LIQUID PHASE GROWTH 失效
公开(公告)号：JPS6021895A
公开(公告)日：1985-02-04
申请号：JP12767983
申请日：1983-07-15
申请人： HITACHI LTD
发明人： KASHIWADA YASUTOSHI , NAKAMURA MICHIHARU
IPC分类号： C30B19/00 , C30B19/04 , C30B19/12 , C30B29/40 , H01L21/208
摘要： PURPOSE:To easily remove oxide formed naturally on the surface of a substrate in the stage of crystal growth of a III-V group compound semiconductor by adding an element having stronger oxidation effect than the element constituting the crystal on the substrate for the growth to the melt for washing the substrate. CONSTITUTION:To a substrate of III-V group compound semiconductor, particularly, to a substrate having mesa formed on a multilayered growth layer for the purpose of prepg. semiconductor laser of built-in hetero structure, when liquid phase growth for the purpose of built-in growth is performed, the substrate is washed with washing soln. for the substrate contg. an element having stronger oxidizing power than the element constituting the substrate is used before the soln. for the growth is brought into contact with the substrate. By the washing, oxides formed naturally on the surface of the substrate are removed. Then, by performing liquid phase growth while contacting the soln. for the growth with the substrate, the quality of the interface between the crystal surface of the substrate and freshly grown surface is improved.

33. 发明专利

JPS59171187A Semiconductor laser device 失效
标题翻译：半导体激光器件
公开(公告)号：JPS59171187A
公开(公告)日：1984-09-27
申请号：JP4424383
申请日：1983-03-18
申请人： Hitachi Ltd
发明人： KURODA TAKAROU , KASHIWADA YASUTOSHI , KAJIMURA TAKASHI , KAYANE NAOKI , OOUCHI HIROBUMI
IPC分类号： H01L21/205 , H01L21/203 , H01S5/00 , H01S5/12
CPC分类号： H01S5/1228 , H01S5/1237
摘要： PURPOSE:To enable to manufacture the titled device with good yield at a time of crystal growth by periodically varying the width of the stepwise difference of a stripe active layer in a specific range. CONSTITUTION:A groove or a projection is formed on a semiconductor substrate 1. In this case, the depth of the groove or the height of the projection is set at 0.2-0.5mum and the center value W of the width of the groove or the projection at 2-5mum. Besides, the stripe width is periodically varied in the range of + or -0.2- 0.5mum from the center value along the direction of photo propagation. Such a formation causes the scattering loss the light receives to become extremely large even when the stepwise difference itself is very small, and enables transverse basic mode oscillation stable with the inhibition of high degree mode even when the width (w) is enlarged. Further, the element of excellent performance can be manufactured with good yield by one time crystal growth.
摘要翻译：目的：通过周期性地改变条纹有源层在特定范围内的逐步差异的宽度，能够在晶体生长时以良好的收率制造标题器件。构成：在半导体基板1上形成有槽或突起。在这种情况下，槽的深度或突起的高度设定为0.2〜0.5μm，槽的宽度的中心值W或投影在2-5mum。此外，条带宽度在沿着光传播方向的中心值的+或-0.2-0.5μm的范围内周期性地变化。这样的形成即使当阶梯差本身非常小时也会使光接收的散射损失变得非常大，并且即使当宽度（w）增大时，也能够抑制高度模式而使横向基本模式振荡稳定。此外，可以通过一次晶体生长以良好的产率制造出优异性能的元件。

34. 发明专利

JPS59163821A Liquid phase epitaxial growth 失效
标题翻译：液相外延生长
公开(公告)号：JPS59163821A
公开(公告)日：1984-09-14
申请号：JP3738183
申请日：1983-03-09
申请人： Hitachi Ltd
发明人： KASHIWADA YASUTOSHI , KOUNO TOSHIHIRO , KAJIMURA TAKASHI , KAYANE NAOKI
IPC分类号： H01L21/208 , H01S5/00
CPC分类号： H01L21/02538 , H01L21/02625
摘要： PURPOSE:To facilitate to control concentration of electrons when a III-V group compound semiconductor layer is to be formed by a method wherein the compound of Te and another element is used as the N type impurities of the III-V group compound semiconductor. CONSTITUTION:When a III-V group compound semiconductor is to be manufactured according to liquid phase epitaxial growth, a compositionally uniform compound of Te and another element is used as N type impurities. As the other element, at least one kind of elements to act as N type impurities to exert no adverse effect to the characteristic of the element, or to act as electrically neutral impurities is used. As the element thereof, Al, Ga, In, Si, Sn, Pb, As, Sb, Bi and Se are used. Te is used generally as N type impurities at liquid phase epitaxial growth of the III-V group compound semiconductor, while because the segragation factor of Te is large, the charge quantity thereof becomes extremely small, and precision of weighing is deteriorated. By using the compound of the other impurity and Te, enhancement of weighing precision can be attained.
摘要翻译：目的：为了通过其中使用Te和另一种元素的化合物作为III-V族化合物半导体的N型杂质的方法形成III-V族化合物半导体层，便于控制电子浓度。构成：当根据液相外延生长制造III-V族化合物半导体时，使用组合均匀的Te和另一种元素的化合物作为N型杂质。作为另一种元素，使用作为N型杂质的至少一种元素不会对元件的特性产生不利影响或用作电中性杂质。作为其元素，使用Al，Ga，In，Si，Sn，Pb，As，Sb，Bi和Se。 Te通常在III-V族化合物半导体的液相外延生长中用作N型杂质，而由于Te的分离因子大，其电荷量变得非常小，称重精度降低。通过使用其他杂质和Te的化合物，可以提高称重精度。

35. 发明专利

JPS58196083A Semiconductor laser element 失效
标题翻译：半导体激光元件
公开(公告)号：JPS58196083A
公开(公告)日：1983-11-15
申请号：JP7824182
申请日：1982-05-12
申请人： Hitachi Ltd
发明人： YAMASHITA SHIGEO , KASHIWADA YASUTOSHI , OOUCHI HIROBUMI
IPC分类号： H01S5/00 , H01S5/042
CPC分类号： H01S5/0422
摘要： PURPOSE:To reduce the value of oscillation threshold current and thus obtain a high reliability by a method wherein the element is formed in a structure of internal current stricture regardless of the conductivity type of substrate crystal. CONSTITUTION:A P-GaAs layer 2 and an N-GaAs layer 3 are formed on an N- GaAs substrate 1 by a liquid phase growing method. Next, a groove 4 is provided in a stripe shape by a photo lithography process, and a P-Ga1-xAlxAs clad layer 5, an undoped Ga1-yAlyAs active layer 6, an N-Ga1-xAlxAs clad layer 7, and an N-GaAs cap layer 8 are grown thereon. Then, using the mask of Al2O3- SiO2, Zn is selectively diffused at a part until it reaches the P-GaAs layer 2. The clearance between an active region and a Zn diffused region 9 is etched to the layer 3, and protected with an SiO2 film 11. Finally, Ti-Pa-Au is evaporated as a surface P-side electrode 12, and AuGeNi-Pd-Au as an N-side electrode 13.
摘要翻译：目的：为了降低振荡阈值电流的值，并且通过其中元件形成为内部电流限制的结构而不管衬底晶体的导电类型如何的方法获得高可靠性。构成：通过液相生长法在N-GaAs衬底1上形成P-GaAs层2和N-GaAs层3。接着，通过光刻工艺形成条状的槽4，将P-Ga1-xAlxAs包覆层5，未掺杂的Ga1-yAlyAs有源层6，N-Ga1-xAlxAs覆盖层7和N -GaAs覆盖层8生长在其上。然后，使用Al2O3-SiO2的掩模，Zn在一部分选择性地扩散，直到其到达P-GaAs层2.有源区和Zn扩散区9之间的间隙蚀刻到层3上，并用最后，作为N面电极13，作为表面P侧电极12，AuGeNi-Pd-Au蒸镀Ti-Pa-Au。

36. 发明专利

JPH04206585A SEMICONDUCTOR LASER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04206585A
公开(公告)日：1992-07-28
申请号：JP32911090
申请日：1990-11-30
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KAJIMURA TAKASHI , TANAKA TOSHIAKI , OISHI AKIO , YANAGISAWA HIRONORI , KASHIWADA YASUTOSHI , KOBAYASHI UICHIRO
IPC分类号： H01S5/00
摘要： PURPOSE:To enable a laser to be enhanced in temperature characteristics and in degree of freedom in the design of a waveguide structure by a method wherein P-type impurities specified in concentration are added to the active layer of an AlGaInP double-heterostructure laser. CONSTITUTION:An N-type (Al0.7Ga0.3)P0.5InP0.5 clad layer 2, an GaInP active layer 3, and others are laminated on a N-type GaAs substrate 1 to constitute an AlGaInP double-heterostructure, and an N-type GaAs current constriction layer 6, a P-type GaAs layer 7, and others are laminated thereon to constitute a semiconductor laser. If P-type impurities such as Zn or the like in a dose of, at least, 5X10 /cm are added to the layer 3, P-type impurities contained in the layer 2 are hardly diffused into the layer 3 when the layer is made to grow for the formation of a stripe structure, and the laser 2 is prevented from lessening in hole concentration. Therefore, a semiconductor laser of this design can be prevented from deteriorating in temperature characteristics due to the overflow of carriers, in result the laser excellent in temperature characteristics and high in degree of freedom in the design of a waveguide can be obtained.

37. 发明专利

JPH04206584A SEMICONDUCTOR LASER AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH04206584A
公开(公告)日：1992-07-28
申请号：JP32910990
申请日：1990-11-30
申请人： HITACHI LTD , HITACHI TOBU SEMICONDUCTOR LTD
发明人： KAJIMURA TAKASHI , OISHI AKIO , YANAGISAWA HIRONORI , TANAKA TOSHIAKI , KOBAYASHI UICHIRO , KASHIWADA YASUTOSHI , YAMAZOE TETSUYA
IPC分类号： H01S5/00
摘要： PURPOSE:To enable a clad layer and an active layer to be uniform in hole concentration, degree of crystal order, and direction of junction by a method wherein impurities of P-type or N-type are made to coexist in the lowermost part of a P-type contact layer. CONSTITUTION:An N-type (Al0.7Ga0.3)P0.5 clad layer 2, an undoped Ga0.5In0.5P active layer 3, a P-type (Al0.7Ga0.3)P0.5 clad layer 4, and a P-type Ga0.5IN0.5P layer 5 are laminated on a N-type GaAs substrate 1 to constitute an AlGaInP double-heterostructure, and an N-type GaAs current constriction layer 6, a GaAsP inversion layer 7, an N-type GaAs layer 20, a P-type GaAs contact layer 8, and others are laminated thereon. By this constitution, impurities of P-type or N-type coexist in the lowermost part of the layer 8, the surface of a wafer is covered with a N-type GaAs layer at the regrowth of the layer 8, and the layers 4 and 3 are made uniform in hole concentration and degree of crystal order inside the wafer, so that a laser element formed through these processes can be uniform stable in characteristics.

38. 发明专利

JPS6357956B2 失效
公开(公告)号：JPS6357956B2
公开(公告)日：1988-11-14
申请号：JP567885
申请日：1985-01-18
申请人： HITACHI LTD
发明人： KASHIWADA YASUTOSHI , KONO TOSHIHIRO , AIKI KUNIO , KURODA TAKARO , UMEDA JUNICHI
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223

39. 发明专利

JPS60152086A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS60152086A
公开(公告)日：1985-08-10
申请号：JP724784
申请日：1984-01-20
申请人： HITACHI LTD
发明人： TSUJI SHINJI , FUJISAKI YOSHIHISA , KAYANE NAOKI , KASHIWADA YASUTOSHI , HIRAO MOTONAO , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/12
摘要： PURPOSE:To operate a semiconductor laser device at a single longitudinal mode even on modulation by constituting a wave guide by each section consisting of a plurality of sections and making mean loss or gains of each section to differ among adjacent several section. CONSTITUTION:A wave guide 3 having the periodic change of a refractive index or gains in the direction of propagation of beams is formed in an active layer 2 or a range affected by a photoelectric field in the vicinity of the active layer 2. The wave guide 3 is constituted by each section consisting of a plurality of sections. Mean loss or gains of each section differ among adjacent several section. Accordingly, beams having a specific wavelength selected by a Bragg's wavelength oscillate, and a semiconductor laser device is operated stably at a longitudinal single mode even on modulation.

40. 发明专利

JPS60134415A SEMICONDUCTOR SUBSTRATE 失效
公开(公告)号：JPS60134415A
公开(公告)日：1985-07-17
申请号：JP24203583
申请日：1983-12-23
申请人： HITACHI LTD
发明人： KASHIWADA YASUTOSHI , ONO YUUICHI , KAYANE NAOKI , KAJIMURA TAKASHI
IPC分类号： H01L21/205 , H01S5/00 , H01S5/026
摘要： PURPOSE:To obtain a semi-insulating substrate of low dislocation density by a method wherein on the compund single crystal substrate, a single crystal epitaxial layer having a different lattice constant therefrom is superposed, and one layer is superposed moreover when it is needed. CONSTITUTION:Dislocation in a substrate crystal is succeeded to an epitaxial layer, composition of the epitaxial layer is changed along the growth direction to change the lattice constant, dislocation in the epitaxial layer can bring the axis of dislocation to have a component perpendicular to the growth direction, and the quantity of dislocation to penetrate to the surface of the epitaxial layer can be reduced. When the lattice constant of the substrate is indicated by a0, and the lattice constant of the epitaxial layer is by a1 (at the case of a multilayer, an average value is adopted), it is effective to select to 2X10 = as a criterion, and to make the thicknss of the epitaxial layer to 300mum or more roughly.

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