专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

JPH09298334A SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH09298334A
公开(公告)日：1997-11-18
申请号：JP11338796
申请日：1996-05-08
申请人： HITACHI LTD
发明人： HAGA TORU , KONO TOSHIHIRO
IPC分类号： H01S5/00 , H01S3/18
摘要： PROBLEM TO BE SOLVED: To reduce the threshold of an buried hetero-junction laser by burying and growing a first conductivity type semiconductor layer and second conductivity type semiconductor layer, diffusing a dopant into the surface of this semiconductor layer to change it to a first conductivity type one and burying and growing a first and second conductivity semiconductor layers. SOLUTION: A p-type clad layer 2 is grown on a p-type substrate 1 and an undoped MQW active layer 3 an n-type clad layer 4 are grown. A SiO2 film 15 is deposited. After a photolithographic step, a mesa stripe having smooth side faces is formed by etching while using this film 15 as a mask. Its side faces are filled with a Zn-doped p-type InP layer 5 and Si-doped n-type InP layer 6 to form a p-type Zn diffused layer 7 on the surface of the InP layer 6. A Zn-doped p-type InP layer 8 and Si-doped n-type InP layer 9 are grown and the mesa stripe is buried. The SiO2 film is removed and n-type InP layer 10 and n-type InGaAs cap layer 11 are buried flat.

2. 发明专利

JP2564343B2 失效
公开(公告)号：JP2564343B2
公开(公告)日：1996-12-18
申请号：JP32398387
申请日：1987-12-23
申请人： HITACHI LTD
发明人： NAKATSUKA SHINICHI , KONO TOSHIHIRO , SAITO KATSUTOSHI , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S3/18

3. 发明专利

JPH07221388A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH07221388A
公开(公告)日：1995-08-18
申请号：JP1238694
申请日：1994-02-04
申请人： HITACHI LTD
发明人： HAGA TORU , KONO TOSHIHIRO , ITO KAZUHIRO , MITANI KATSUHIKO
IPC分类号： H01S5/00 , H01S3/18
摘要： PURPOSE:To provide a surface emission laser using an excellent reflection surface which is inclined 45 deg. against the surface of a substrate by forming the reflection surface regardless of the kind of the semiconductor crystal used. CONSTITUTION:A semiconductor laser 4 is formed on an InP substrate 1 which is inclined 9 deg. to 10 deg. in (110) direction against (100) face so that the emitting direction of laser light 5 can become coincident with (110). After forming the laser 4, an SiNX film is deposited on the entire surface of the substrate 1 by using the CVD method. A part where the semiconductor layer is exposed is formed near a laser light emitting surface by treating the SiNX film by photolithography and etching and an InP layer 2 is selectively grown on the part by metal organic chemical vapor deposition. The angle between one side face of the selectively grown layer 2 in (110) direction and the substrate l becomes 45 deg.. When the laser light 5 emitted from the laser 4 is made incident to the side face, the light 5 is reflected in the direction perpendicular to the substrate 1.

4. 发明专利

JPH0385774A SEMICONDUCTOR LIGHT-EMITTING ELEMENT 失效
公开(公告)号：JPH0385774A
公开(公告)日：1991-04-10
申请号：JP22143689
申请日：1989-08-30
申请人： HITACHI LTD
发明人： HANEDA MAKOTO , KONO TOSHIHIRO , TSUJI SHINJI , ONO YUICHI , AIKI KUNIO
IPC分类号： H01L33/06 , H01L33/10 , H01L33/14 , H01L33/24 , H01L33/28 , H01L33/30 , H01L33/40
摘要： PURPOSE:To obtain a light-emitting element with improved external quantum efficiency and improved light-collecting and coupling properties by forming a high-reflection layer on one side of a p-n junction having a function for emitting light by injection of current and enabling light to be taken out to the other side and then forming a recessed shape in the direction of irradiation of light. CONSTITUTION:By etching only the central part of a current block layer 4a selectively and then creating a P-type clad layer 4 and a contact layer 5 by LPE(Liquid Phase Epitaxy), planes 2a and 3 can be formed not in parallel with a light taking-out plane 10. Also, since the center of each radius of curvature is located at the outside of an element, it is possible to obtain the element with extremely improved light-collecting property. Also, with this structure, since there is a current blocking layer 4a, it is possible to enable current to be fed to a hetero junction layer and to obtain a high multiplex quantum effect. Also, approximately 90% of light projected onto the rear from a light-emitting part is reflected by a light-reflecting multilayer film 3, is collected by a recessed shape, and can be taken out through the light take-out window 10.

5. 发明专利

JPH02228087A SEMICONDUCTOR LASER ELEMENT 失效
公开(公告)号：JPH02228087A
公开(公告)日：1990-09-11
申请号：JP4650389
申请日：1989-03-01
申请人： HITACHI LTD
发明人： TANAKA TOSHIAKI , KONO TOSHIHIRO , KAJIMURA TAKASHI
IPC分类号： H01S5/00 , H01S5/065 , H01S5/22 , H01S5/223 , H01S5/227 , H01S5/30 , H01S5/34 , H01S5/343
摘要： PURPOSE:To improve the high output and low noise characteristic by constructing an active layer of a single quantum well layer and superlattice multiple quantum well layers provided on the upper and lower surfaces thereof and forming a ridged waveguide structure for obtaining a self-oscillating laser element. CONSTITUTION:An active layer is constructed of a single quantum well layer 5 and superlattice multiple quantum well layers 4, 6 provided on the upper and lower surfaces thereof, and composition, film thickness, and impurity concentration of respective layers 4, 5, 6 are caused by have predetermined values. A light waveguide layer, on the opposite side of a semiconductor substrate with respect to the active layer, has a mesa-stripe-like ridged part extending in the resonator length direction, and light absorption and current constriction parts are formed on the light waveguide layer with the ridge part at the both ends of the ridged part, and self-oscillation is effected. Therefore, the laser light distribution is controlled and the light absorption layer is provided at a predetermined position relative to the active layer, so that the effective refraction index difference in the lateral direction of the active layer can be caused to have a desired value. Thus, a high output characteristic required by a writing and erasing light source for an optical disk, and a low noise characteristic required by a reading light source can be obtained.

6. 发明专利

JPH0278290A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPH0278290A
公开(公告)日：1990-03-19
申请号：JP22867088
申请日：1988-09-14
申请人： HITACHI LTD
发明人： TANAKA TOSHIAKI , KONO TOSHIHIRO , KAJIMURA TAKASHI , ONO YUICHI
IPC分类号： H01S5/00 , H01S5/065
摘要： PURPOSE:To decrease a self-excited oscillation frequency by a method wherein the thickness and the width of a multi-quantum well layer are specified and the well layer is doped with a n-type impurity. CONSTITUTION:The following are successively formed in lamination on a substrate 1: a buffer layer 2; a clad layer 3; a multi quantum well structure active layer 4'; a clad layer 5; a current constricting layer 7; and a buried layer 8. The adequate thickness and well width of the active layer 4, are 0.05-0.09mum and 5-20nm respectively. Here, the active layer 4, is doped with n-type impurity Se, and a quantum barrier. layer 5 and a quantum well layer 4 are repeatedly and uniformly doped with also n-type impurity Se. If the active layer 4' is doped as mentioned above, electrons contributing the recombination luminescence can be supplied without the injection of carriers, and the gain can be obtained throughout a wide energy region. In result, a self excited oscillation frequency can be decreased.

7. 发明专利

JPS63281487A SEMICONDUCTOR LASER 失效
公开(公告)号：JPS63281487A
公开(公告)日：1988-11-17
申请号：JP11462287
申请日：1987-05-13
申请人： HITACHI LTD
发明人： NAKATSUKA SHINICHI , SAITO KATSUTOSHI , KONO TOSHIHIRO , KAJIMURA TAKASHI
IPC分类号： H01S5/00
摘要： PURPOSE:To get rid of element failure caused by the deterioration of current constriction effect, and reduce a leak current caused by light, by a method wherein a p-n junction to constrict the current of a semiconductor laser is separated from a buried growth boundary surface, by providing a crystal surface before buried and grown with an n-type inverting region. CONSTITUTION:On an n-type GaAs substrate 1, the following are crystal-grown in order by MOCVD method; an n-type clad layer 2 of GaAlAs, an undoped active layer 3, a p-type clad layer 4, a p-type etching interruption layer 7, a p-type selective etching layer 8 and a p-type cap layer 9. Then, an SiO2 mask is formed, etching applying phosphoric acid system liquid is performed, in which the selective etching layer 8 outside stripes is left, and the residual selective etching layer is eliminated by heated hydrochloric acid. Thereby, the exact stop at the surface of the etching interruption layer 7 is enabled. Again by MOCVD method, an n-type GaAs 6 is buried, and eliminated after growth, by hydrofluoric system etching liquid. At that time, a junction is formed in a growth layer of the first time, and the characteristics are stabilized, by supplying n-type dopant material in order to invert the clad layer 4 side of the buried boundary surface into n-type. Further, this inverting layer 5 blocks a leak current of minority carrier generated in a light absorbing layer 6.

8. 发明专利

JPS6357956B2 失效
公开(公告)号：JPS6357956B2
公开(公告)日：1988-11-14
申请号：JP567885
申请日：1985-01-18
申请人： HITACHI LTD
发明人： KASHIWADA YASUTOSHI , KONO TOSHIHIRO , AIKI KUNIO , KURODA TAKARO , UMEDA JUNICHI
IPC分类号： H01L21/208 , H01S5/00 , H01S5/223

9. 发明专利

JPS63185017A CRYSTAL GROWING APPARATUS 失效
公开(公告)号：JPS63185017A
公开(公告)日：1988-07-30
申请号：JP1606987
申请日：1987-01-28
申请人： HITACHI LTD
发明人： ONO YUICHI , KONO TOSHIHIRO , HIRUMA TAKEYUKI , KOBAYASHI JUNICHI , IKEGAWA MASATO , USUI TAKETO
IPC分类号： H01L21/205
摘要： PURPOSE:To provide excellent uniformity in a composition face and film thickness, and to prevent the hysteresis of the composition from occurring by disposing a substrate holder in a conical reactor, and disposing a cooler in the downstream section of a substrate to form a reacted gas passing section in a rectifying susceptor structure. CONSTITUTION:A material gas inlet tube 2 and a gas mixture chamber 3 are provided at the top of a reaction tube 1, and a reaction tube wall 4 for forming part of a conical shape, a rectifying susceptor, a susceptor 5 used as a substrate supporting susceptor, a substrate holder 6 disposed on the susceptor, and a substrate material 7 are provided. The holder 6 is always disposed in the conical section 4 at this time, a lower section from the upper end of the substrate is formed in a water-cooling structure, and a water inlet 8 and an outlet 9 are provided. The space of the upstream section of the substrate is formed in a conical shape to improve gas flowing velocity, and the surface temperature is held highly by the heat radiation effect of the holder. The inclining angle thetaof the substrate to the tube wall is set to 3-7 degrees to remarkably improve a crystal film thickness distribution on the surface.

10. 发明专利

JPS62285483A SEMICONDUCTOR LASER DEVICE 失效
公开(公告)号：JPS62285483A
公开(公告)日：1987-12-11
申请号：JP12792086
申请日：1986-06-04
申请人： HITACHI LTD
发明人： UOMI KAZUHISA , YOSHIZAWA MISUZU , KAJIMURA TAKASHI , KONO TOSHIHIRO , SASAKI YOSHIMITSU
IPC分类号： H01S5/00
摘要： PURPOSE:To obtain a high output by one outgoing beams while acquiring a laser having high reliability by forming a high reflection film to one part of a laser outgoing end-surface. CONSTITUTION:Normal double hetero-structure is grown on a GaAs substrate, to which five groove stripes are shaped, through a liquid growth method. High reflection films 9 are executed to outgoing end surfaces in second and fourth light-emitting striped regions from the left, and laser lights are not emitted from the regions. Consequently, laser lights, 360 deg. phase of which is conformed, are emitted from first, third and fifth stripes from the left. Accordingly, laser lights are intensified mutually in the direction vertical from the outgoing end surfaces, thus forming outgoing beams to one single peak.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式