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31. 发明授权

US07517707B2 Manufacturing method of semiconductor integrated circuit device and probe card 有权
标题翻译：半导体集成电路器件和探针卡的制造方法
公开(公告)号：US07517707B2
公开(公告)日：2009-04-14
申请号：US11783778
申请日：2007-04-12
申请人： Masayoshi Okamoto , Hideyuki Matsumoto , Shingo Yorisaki , Akio Hasebe , Yasuhiro Motoyama , Akira Shimase
发明人： Masayoshi Okamoto , Hideyuki Matsumoto , Shingo Yorisaki , Akio Hasebe , Yasuhiro Motoyama , Akira Shimase
IPC分类号： H01L31/26
CPC分类号： G01R3/00 , G01R1/07307
摘要： Electrical testing is to be performed on a semiconductor integrated circuit device which the test pads formed. To facilitate such testing, the method of manufacture of the semiconductor integrated circuit device employs a probe card which has two or more contact terminals which can contact two or more electrodes. This probe card includes, in opposition to a wiring substrate of the semiconductor integrated circuit device in which a first wiring is formed, a first sheet having two or more contact terminals to contact the two or more electrodes; a second wiring electrically connected to the two or more contact terminals and the first wiring; and first dummy wirings which are near the region of formation of the two or more contact terminals, are arranged to a non-forming region of the second wiring, and do not participate in signal transfer.
摘要翻译：电测试将在形成测试焊盘的半导体集成电路器件上进行。为了便于这种测试，半导体集成电路器件的制造方法采用具有两个或更多个能够接触两个或更多个电极的接触端子的探针卡。该探针卡与形成有第一布线的半导体集成电路器件的布线基板相对应，具有接触两个以上的电极的两个以上的接触端子的第一片; 电连接到所述两个或更多个接触端子和所述第一布线的第二布线; 并且在两个或多个接触端子的形成区域附近的第一虚拟布线被布置到第二布线的非形成区域，并且不参与信号传递。

32. 发明授权

US07301146B2 Probe driving method, and probe apparatus 有权
标题翻译：探头驱动方法和探头装置
公开(公告)号：US07301146B2
公开(公告)日：2007-11-27
申请号：US11201222
申请日：2005-08-11
申请人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
发明人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
IPC分类号： G01N23/00 , G21K7/00
CPC分类号： G01Q10/06 , G01N23/04 , G01N23/225 , G01R31/2886 , G01R31/311 , H01J37/28
摘要： A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow (54) appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.
摘要翻译：探针驱动方法和探针装置，用于通过监测探针高度，以安全和有效的方式使探针与样品的表面接触。通过检测在探针接触样品之前出现的探针阴影（54），或者基于探针图像和样品图像的相对位置的变化，获得关于来自样品表面的探针的高度的信息，对角线照射离子束。

33. 发明申请

US20070190671A1 Manufacturing method of semiconductor integrated circuit device and probe card 有权
标题翻译：半导体集成电路器件和探针卡的制造方法
公开(公告)号：US20070190671A1
公开(公告)日：2007-08-16
申请号：US11783778
申请日：2007-04-12
申请人： Masayoshi Okamoto , Hideyuki Matsumoto , Shingo Yorisaki , Akio Hasebe , Yasuhiro Motoyama , Akira Shimase
发明人： Masayoshi Okamoto , Hideyuki Matsumoto , Shingo Yorisaki , Akio Hasebe , Yasuhiro Motoyama , Akira Shimase
IPC分类号： H01L21/66
CPC分类号： G01R3/00 , G01R1/07307
摘要： Electrical testing is to be performed on a semiconductor integrated circuit device which the test pads formed. To facilitate such testing, the method of manufacture of the semiconductor integrated circuit device employs a probe card which has two or more contact terminals which can contact two or more electrodes. This probe card includes, in opposition to a wiring substrate of the semiconductor integrated circuit device in which a first wiring is formed, a first sheet having two or more contact terminals to contact the two or more electrodes; a second wiring electrically connected to the two or more contact terminals and the first wiring; and first dummy wirings which are near the region of formation of the two or more contact terminals, are arranged to a non-forming region of the second wiring, and do not participate in signal transfer.
摘要翻译：电测试将在形成测试焊盘的半导体集成电路器件上进行。为了便于这种测试，半导体集成电路器件的制造方法采用具有两个或更多个能够接触两个或更多个电极的接触端子的探针卡。该探针卡与形成有第一布线的半导体集成电路器件的布线基板相对应，具有接触两个以上的电极的两个以上的接触端子的第一片; 电连接到所述两个或更多个接触端子和所述第一布线的第二布线; 并且在两个或多个接触端子的形成区域附近的第一虚拟布线被布置到第二布线的非形成区域，并且不参与信号传递。

34. 发明授权

US4479060A Apparatus for irradiation with charged particle beams 失效
标题翻译：用于带电粒子束照射的装置
公开(公告)号：US4479060A
公开(公告)日：1984-10-23
申请号：US454027
申请日：1982-12-28
申请人： Hifumi Tamura , Tohru Ishitani , Akira Shimase
发明人： Hifumi Tamura , Tohru Ishitani , Akira Shimase
IPC分类号： H01J37/073 , G01Q30/20 , H01J37/08 , H01J37/10 , H01J37/12 , H01J37/252 , H01J3/14 , G01N23/04 , G01N23/225
CPC分类号： H01J37/10 , H01J37/252
摘要： An apparatus according to the present invention for irradiating a specimen with charged particle beams comprises a single charged particle generating source from which the charged particle beams formed of electrons and negative ions, respectively, can be simultaneously derived; a specimen holder on which the specimen is placed; and charged particle irradiation means which is interposed between the charged particle generating source and the specimen holder in order to focus the charged particle beams and to irradiate the surface of the specimen with the focused beams, and which includes at least one magnetic lens and at least one electrostatic lens that are individually disposed.
摘要翻译：根据本发明的用于用带电粒子束照射样本的装置包括单个带电粒子发生源，可以同时衍生由电子和负离子形成的带电粒子束; 放置样品的样品架; 以及带电粒子照射装置，其被插入在带电粒子发生源和样本保持器之间，以便聚焦带电粒子束并用聚焦束照射样本的表面，并且至少包括至少一个磁性透镜一个静电透镜单独设置。

35. 发明授权

US07865012B2 Semiconductor failure analysis apparatus which acquires a failure observed image, failure analysis method, and failure analysis program 有权
标题翻译：获取故障观察图像，故障分析方法和故障分析程序的半导体故障分析装置
公开(公告)号：US07865012B2
公开(公告)日：2011-01-04
申请号：US11586721
申请日：2006-10-26
申请人： Toshiyuki Majima , Akira Shimase , Hirotoshi Terada , Kazuhiro Hotta
发明人： Toshiyuki Majima , Akira Shimase , Hirotoshi Terada , Kazuhiro Hotta
IPC分类号： G06K9/00
CPC分类号： G01N21/95607 , G01N2021/95615
摘要： A failure analysis apparatus 10 is composed of an inspection information acquirer 11 for acquiring a failure observed image P2 of a semiconductor device, a layout information acquirer 12 for acquiring layout information, and a failure analyzer 13 for analyzing a failure. The failure analyzer 13 extracts as a candidate interconnection for a failure, an interconnection passing an analysis region, out of a plurality of interconnections, using interconnection information to describe a configuration of interconnections in the semiconductor device by a pattern data group of interconnection patterns in respective layers, and, for extracting the candidate interconnection, it performs an equipotential trace of the interconnection patterns using the pattern data group, thereby extracting the candidate interconnection. This substantializes a semiconductor failure analysis apparatus, failure analysis method, and failure analysis program capable of securely and efficiently performing the analysis of the failure of the semiconductor device using the failure observed image.
摘要翻译：故障分析装置10由用于获取半导体装置的故障观察图像P2的检查信息获取部11，用于获取布局信息的布局信息获取部12以及用于分析故障的故障分析部13构成。故障分析器13通过互连信息提取出故障的候选互连，通过分析区域的互连，使用互连信息，以通过相应的互连模式的图案数据组来描述半导体器件中的互连的配置并且为了提取候选互连，它使用模式数据组来执行互连模式的等势线，从而提取候选互连。这实现了半导体故障分析装置，故障分析方法和故障分析程序，其能够安全有效地执行使用故障观察图像的半导体器件的故障的分析。

36. 发明申请

US20050227383A1 Manufacturing method of semiconductor integrated circuit device and probe card 有权
标题翻译：半导体集成电路器件和探针卡的制造方法
公开(公告)号：US20050227383A1
公开(公告)日：2005-10-13
申请号：US11100600
申请日：2005-04-07
申请人： Masayoshi Okamoto , Hideyuki Matsumoto , Shingo Yorisaki , Akio Hasebe , Yasuhiro Motoyama , Akira Shimase
发明人： Masayoshi Okamoto , Hideyuki Matsumoto , Shingo Yorisaki , Akio Hasebe , Yasuhiro Motoyama , Akira Shimase
IPC分类号： G01R31/26 , G01R1/067 , G01R1/073 , G01R3/00 , H01L21/66 , H01L21/82
CPC分类号： G01R3/00 , G01R1/07307
摘要： Electrical testing is to be performed on a semiconductor integrated circuit device which the test pads formed. To facilitate such testing, the method of manufacture of the semiconductor integrated circuit device employs a probe card which has two or more contact terminals which can contact two or more electrodes. This probe card includes in opposition to a wiring substrate of the semiconductor integrated circuit device in which a first wiring is formed, a first sheet having two or more contact terminals to contact the two or more electrodes; a second wiring electrically connected to the two or more contact terminals and the first wiring; and first dummy wirings which are near the region of formation of the two or more contact terminals, are arranged to a non-forming region of the second wiring, and do not participate in signal transfer.
摘要翻译：电测试将在形成测试焊盘的半导体集成电路器件上进行。为了便于这种测试，半导体集成电路器件的制造方法采用具有两个或更多个能够接触两个或更多个电极的接触端子的探针卡。该探针卡包括与形成有第一布线的半导体集成电路器件的布线基板相对的第一片，具有两个或更多个接触端子以与两个或更多个电极接触的第一片; 电连接到所述两个或更多个接触端子和所述第一布线的第二布线; 并且在两个或多个接触端子的形成区域附近的第一虚拟布线被布置到第二布线的非形成区域，并且不参与信号传递。

37. 发明授权

US06303932B1 Method and its apparatus for detecting a secondary electron beam image and a method and its apparatus for processing by using focused charged particle beam 有权
标题翻译：用于检测二次电子束图像的方法及其装置，以及通过使用聚焦带电粒子束进行处理的方法及其装置
公开(公告)号：US06303932B1
公开(公告)日：2001-10-16
申请号：US09195711
申请日：1998-11-19
申请人： Yuichi Hamamura , Akira Shimase , Junzou Azuma , Michinobu Mizumura , Norimasa Nishimura , Yasuhiro Koizumi , Hidemi Koike
发明人： Yuichi Hamamura , Akira Shimase , Junzou Azuma , Michinobu Mizumura , Norimasa Nishimura , Yasuhiro Koizumi , Hidemi Koike
IPC分类号： H01J37244
CPC分类号： H01J37/28 , H01J2237/004 , H01J2237/2817
摘要： A secondary charged particle image acquisition method and its apparatus for detecting a secondary charged particle image. The method includes the steps of irradiating a surface of a specimen with a focused charged particle beam and detecting a secondary charged particle emanated from the surface of the specimen, obtaining a secondary charged particle image based on the detected secondary charged particle, irradiating a positive ion beam on the surface of the specimen where the focused charged particle beam is irradiated and inducing a conductive layer on the surface of the specimen by the irradiation of the positive ion beam and diffusing an electric charge on the surface of the conductive layer.
摘要翻译：二次带电粒子图像采集方法及其装置，用于检测二次带电粒子图像。该方法包括以下步骤：用聚焦的带电粒子束照射样品的表面并检测从样品表面发出的二次带电粒子，基于检测到的二次带电粒子获得二次带电粒子图像，照射正离子在被照射聚焦的带电粒子束的样品的表面上射束，并通过正离子束的照射在样品的表面上引导导电层，并在导电层的表面上扩散电荷。

38. 发明授权

US5976328A Pattern forming method using charged particle beam process and charged particle beam processing system 失效
标题翻译：使用带电粒子束工艺和带电粒子束处理系统的图案形成方法
公开(公告)号：US5976328A
公开(公告)日：1999-11-02
申请号：US788421
申请日：1997-01-27
申请人： Junzou Azuma , Akira Shimase , Yuichi Hamamura , Hidemi Koike
发明人： Junzou Azuma , Akira Shimase , Yuichi Hamamura , Hidemi Koike
IPC分类号： H01J37/305 , C23C16/26 , H01J37/18 , H01L21/027 , H01L21/302 , H01L21/3065 , C23C14/34
CPC分类号： H01J37/18 , C23C16/26 , H01J2237/317
摘要： A pattern forming method using an improved charged particle beam process, and a charged particle beam processing system prevent effectively the corrosion of a workpiece by a reactive gas adsorbed by and adhering to the surface of the workpiece when the workpiece is taken out into the atmosphere after pattern formation. The charged particle beam processing system comprises, as principal components, an ion beam chamber provided with an ion beam optical system, a processing chamber (18) provided with a gas nozzle through which a reactive gas is blown against a workpiece, a load-lock chamber connected through a gate valve to the processing chamber. The load-lock chamber is capable of producing a plasma of an inert gas for processing the surface of the workpiece by sputtering. The workpiece is returned to the load-lock chamber after a pattern has been formed thereon in the processing chamber by reactive processing including irradiating the surface of the workpiece with a charged particle beam in an environment of the reactive gas, and the workpiece is subjected to a plasma process to remove the reactive gas adsorbed by the workpiece during pattern formation and adhering to the workpiece.
摘要翻译：使用改进的带电粒子束工艺的图案形成方法和带电粒子束处理系统，当工件被排出到大气中之后，通过被吸收并附着在工件表面上的反应气体有效地防止工件的腐蚀图案形成。带电粒子束处理系统作为主要部件包括设置有离子束光学系统的离子束室，设置有气体喷嘴的处理室（18），通过该喷嘴将反应气体吹向工件，加载锁室通过闸阀连接到处理室。负载锁定室能够产生用于通过溅射处理工件的表面的惰性气体的等离子体。在通过反应性处理在处理室中形成图案之后，工件返回到装载锁定室，包括在反应气体的环境中用带电粒子束照射工件的表面，并且对工件进行等离子体处理，以在图案形成期间去除被工件吸附的反应气体并附着到工件上。

39. 发明授权

US5504340A Process method and apparatus using focused ion beam generating means 失效
标题翻译：使用聚焦离子束产生装置的方法和装置
公开(公告)号：US5504340A
公开(公告)日：1996-04-02
申请号：US207860
申请日：1994-03-09
申请人： Michinobu Mizumura , Yuuichi Hamamura , Junzou Azuma , Akira Shimase , Takashi Kamimura , Fumikazu Itoh , Kaoru Umemura , Yoshimi Kawanami , Yuuichi Madokoro
发明人： Michinobu Mizumura , Yuuichi Hamamura , Junzou Azuma , Akira Shimase , Takashi Kamimura , Fumikazu Itoh , Kaoru Umemura , Yoshimi Kawanami , Yuuichi Madokoro
IPC分类号： G01Q30/20 , G01Q60/52 , H01J37/305 , H01J37/317
CPC分类号： H01J37/3056 , H01J2237/0802 , H01J2237/0805 , H01J2237/0807 , H01J2237/0817 , H01J2237/31732 , H01J2237/31742 , H01J2237/31749
摘要： A processing method and a processing apparatus realizing the method use a focused ion beam generator. The apparatus includes a plasma or liquid metal ion source producing ions not influencing electric characteristics of a sample, an ion beam generator for extracting ions from the ion source into an ion beam, an ion beam focusing device for focusing the ion beam, an irradiator for irradiating the focused ion beam onto the sample, and a sample chamber in which the sample to be irradiated for processing is installed. The focused ion beam is irradiated onto a sample such as a silicon wafer or device to conduct on a particular position of the sample a fine machining work, a fine layer accumulation, and an analysis.
摘要翻译：实现该方法的处理方法和处理装置使用聚焦离子束发生器。该装置包括：等离子体或液体金属离子源，其产生不影响样品电特性的离子;离子束发生器，用于将离子源离子离子束提取到离子束;离子束聚焦装置，用于聚焦离子束;辐照器，将聚焦的离子束照射到样品上，并且在其中安装待照射用于处理的样品的样品室。将聚焦离子束照射到诸如硅晶片或器件的样品上以在样品的特定位置上进行精细加工，细层积累和分析。

40. 发明申请

US20050269511A1 Probe driving method, and probe apparatus 有权
标题翻译：探头驱动方法和探头装置
公开(公告)号：US20050269511A1
公开(公告)日：2005-12-08
申请号：US11201222
申请日：2005-08-11
申请人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
发明人： Satoshi Tomimatsu , Hidemi Koike , Junzo Azuma , Tohru Ishitani , Aritoshi Sugimoto , Yuichi Hamamura , Isamu Sekihara , Akira Shimase
IPC分类号： G01N1/28 , G01N1/32 , G01N23/04 , G01N23/225 , G01Q10/00 , G01Q30/02 , G01Q30/04 , G01Q30/20 , G01Q60/44 , G01R1/06 , G01R31/28 , G01R31/311 , H01J37/28 , H01L21/66 , G01N23/00 , G21K7/00
CPC分类号： G01Q10/06 , G01N23/04 , G01N23/225 , G01R31/2886 , G01R31/311 , H01J37/28
摘要： A probe driving method and a probe apparatus for bringing a probe into contact with the surface of a sample in a safe and efficient manner by monitoring the probe height. Information about the height of the probe from the sample surface is obtained by detecting a probe shadow (54) appearing immediately before the probe contacts the sample, or based on a change in relative positions of a probe image and a sample image that are formed as an ion beam is irradiated diagonally.
摘要翻译：探针驱动方法和探针装置，用于通过监测探针高度，以安全和有效的方式使探针与样品的表面接触。通过检测在探针接触样品之前出现的探针阴影（54），或者基于探针图像和样品图像的相对位置的变化，获得关于来自样品表面的探针的高度的信息，对角线照射离子束。

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