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31. 发明申请

US20090250006A1 RAW MATERIAL FEEDING DEVICE AND FILM FORMATION SYSTEM 有权
标题翻译：原料进料装置和薄膜成型系统
公开(公告)号：US20090250006A1
公开(公告)日：2009-10-08
申请号：US12067714
申请日：2006-07-25
申请人： Hideaki Yamasaki , Yumiko Kawano
发明人： Hideaki Yamasaki , Yumiko Kawano
IPC分类号： C23C16/54
CPC分类号： C23C16/4481
摘要： A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side.
摘要翻译：将通过将固体原料升华形成的气态原料供给到成膜系统的原料供给装置包括：将固体原料保持在其中的原料容器，放置在容器第一侧的第一加热单元，放置在第二侧的第二加热单元，第一温度控制单元，用于进行控制第一和第二加热单元的第一过程，以使第一侧的温度高于第二侧的温度，从而使固体原料设置在第一侧的材料和第二温度控制单元，用于进行控制第一和第二加热单元的第二过程，以使第二侧的温度高于第一侧的温度，从而使设置的固体原料升华在第二边。

32. 发明授权

US07344754B2 Film formation method 有权
标题翻译：成膜方法
公开(公告)号：US07344754B2
公开(公告)日：2008-03-18
申请号：US11155575
申请日：2005-06-20
申请人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
发明人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
IPC分类号： C23C16/00 , B05D3/00
CPC分类号： C23C16/455 , C23C16/16 , H01L21/28556
摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.
摘要翻译：公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

33. 发明授权

US06846711B2 Method of making a metal oxide capacitor, including a barrier film 失效
标题翻译：制造金属氧化物电容器的方法，包括阻挡膜
公开(公告)号：US06846711B2
公开(公告)日：2005-01-25
申请号：US09794046
申请日：2001-02-28
申请人： Hideaki Yamasaki , Yumiko Kawano
发明人： Hideaki Yamasaki , Yumiko Kawano
IPC分类号： H01L27/108 , H01L21/02 , H01L21/768 , H01L21/8242
CPC分类号： H01L21/7687 , H01L21/76843 , H01L21/76846 , H01L21/76849 , H01L21/76856 , H01L27/10855 , H01L28/55 , H01L28/60 , H01L28/75 , H01L28/90
摘要： A semiconductor device includes an interlevel insulating film, a contact plug, a barrier film, a first electrode, a capacitor insulating file, and a second electrode. The interlevel insulating film is formed on a semiconductor substrate. The contact plug extends through the interlevel insulating film and is formed from a conductive material. The barrier film is formed from a tungsten-based material on the upper surface of the contact plug. The first electrode is connected to the contact plug via the barrier film and formed from a metal material on the interlevel insulating film. The capacitor insulating film is formed from an insulating metal oxide on the first electrode. The second electrode is insulated by the capacitor insulating film and formed on the surface of the first electrode.
摘要翻译：半导体器件包括层间绝缘膜，接触插塞，阻挡膜，第一电极，电容器绝缘件和第二电极。层间绝缘膜形成在半导体基板上。接触插塞延伸穿过层间绝缘膜，并由导电材料形成。阻挡膜由接触塞的上表面上的钨基材料形成。第一电极通过阻挡膜连接到接触塞，并由层间绝缘膜上的金属材料形成。电容绝缘膜由第一电极上的绝缘金属氧化物形成。第二电极被电容器绝缘膜绝缘并形成在第一电极的表面上。

34. 发明授权

US06548112B1 Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber 失效
标题翻译：将前体蒸汽从低蒸汽压力液体源输送到CVD室的装置和方法
公开(公告)号：US06548112B1
公开(公告)日：2003-04-15
申请号：US09442930
申请日：1999-11-18
申请人： Joseph T. Hillman , Tugrul Yasar , Kenichi Kubo , Vincent Vezin , Hideaki Yamasaki , Yasuhiko Kojima , Yumiko Kawano , Hideki Yoshikawa
发明人： Joseph T. Hillman , Tugrul Yasar , Kenichi Kubo , Vincent Vezin , Hideaki Yamasaki , Yasuhiko Kojima , Yumiko Kawano , Hideki Yoshikawa
IPC分类号： C23C1618
CPC分类号： C23C16/4486
摘要： A CVD reactor is provided with a precursor delivery system that is integrally connected to the reactor chamber. Liquid precursor such as a copper or other metal-organic precursor is atomized at the entry of a high flow-conductance vaporizer, preferably with the assistance of an inert sweep gas. Liquid precursor is maintained, when in an unstable liquid state, at or below room temperature. In the vaporizer, heat is introduced to uniformly heat the atomized precursor. The vaporized precursor is passed into a diffuser which diffuses the vapor, either directly or through a showerhead, into the reaction chamber.
摘要翻译： CVD反应器设置有与反应器室一体地连接的前体输送系统。优选在惰性吹扫气体的帮助下，诸如铜或其它金属 - 有机前体的液体前体在高流量蒸发器的入口处被雾化。当处于不稳定的液体状态时，液体前体保持在室温或室温以下。在蒸发器中，引入热量以均匀加热雾化的前体。蒸发的前体进入扩散器，其将蒸气直接或通过喷头扩散到反应室中。

35. 发明授权

US06399484B1 Semiconductor device fabricating method and system for carrying out the same 失效
标题翻译：半导体器件制造方法及其实施方法
公开(公告)号：US06399484B1
公开(公告)日：2002-06-04
申请号：US09425971
申请日：1999-10-25
申请人： Hideaki Yamasaki , Satoshi Yonezawa , Susumu Arima , Yumiko Kawano , Mitsuhiro Tachibana , Keizo Hosoda
发明人： Hideaki Yamasaki , Satoshi Yonezawa , Susumu Arima , Yumiko Kawano , Mitsuhiro Tachibana , Keizo Hosoda
IPC分类号： H01L214763
CPC分类号： C23C16/45565 , C23C16/0281 , C23C16/34 , C23C16/4404 , C23C16/4405 , C23C16/4557 , C23C16/45574 , H01L21/28556 , H01L21/28568 , H01L21/32051
摘要： A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.
摘要翻译：一种半导体器件制造方法，包括使含有钨原子的第一源气体与工件接触并且不会使含有氮原子的第二源气体与工件接触的制备方法，以及形成钨通过使用第一和第二源气体在工件上形成氮化物膜，以制造半导体器件。当氮化钨膜进行热处理时，半导体器件制造方法能够防止氮化钨膜从其下面的层剥离。

36. 发明授权

US07078341B2 Method of depositing metal layers from metal-carbonyl precursors 有权
标题翻译：从金属羰基前体沉积金属层的方法
公开(公告)号：US07078341B2
公开(公告)日：2006-07-18
申请号：US10673648
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76841
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.
摘要翻译：一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） Co（CO）8，Rh 4（CO）12，SO 2，CO 2，（CO）10，Cr（CO）6和Ru 3（CO）_{12 。在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的衬底温度下从包含W（CO）6 N 2前体的工艺气体中沉积W层，约200毫托。}

37. 发明授权

US06966936B2 Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system 失效
标题翻译：加工系统，加工系统疏散系统，低压CVD系统，排气系统和低压CVD系统的捕集装置
公开(公告)号：US06966936B2
公开(公告)日：2005-11-22
申请号：US10277914
申请日：2002-10-23
申请人： Hideaki Yamasaki , Yumiko Kawano , Kenichi Kubo , Susumu Arima
发明人： Hideaki Yamasaki , Yumiko Kawano , Kenichi Kubo , Susumu Arima
IPC分类号： B01D53/64 , C23C16/18 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/31 , H01L21/3205 , H01L23/52 , B01D45/08
CPC分类号： C23C16/18 , C23C16/4412 , C23C16/45593 , H01L21/28556 , Y02C20/30 , Y02P70/605 , Y10S55/15
摘要： An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel (10) for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit (12) for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (10), and an evacuating system (14) for evacuating the processing vessel (10). The evacuating system (14) includes a vacuum pump (26), a high-temperature trapping device (28) disposed above the vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas. The high-temperature trapping device (28) decomposes the unused Cu(I)hfacTMVS contained in a gas sucked out of the processing vessel (10) to trap metallic copper. The low-temperature trapping device traps Cu(II)(hfac)2 produced as a reaction byproduct.
摘要翻译：本发明的目的是为了确保真空泵的稳定运行，用于从低压处理室排出未使用的源气体和反应副产物气体，以有效地回收反应副产物以有效利用资源并减少运行费用低压CVD系统具有用于进行用于形成铜膜的低压CVD工艺的处理容器（10），用于供应有机铜化合物作为源气体的源气体供给单元（12），例如Cu （I）hfacTMVS进入处理容器（10），以及用于抽空处理容器（10）的抽空系统（14）。抽真空系统（14）包括真空泵（26），相对于气体的流动方向设置在真空泵（26）上方的高温捕集装置（28）和低温捕集装置（30））相对于气体的流动方向设置在真空泵下方。高温捕集装置（28）分解从处理容器（10）中吸出的气体中所含的未使用的Cu（I）hfacTMVS，以捕获金属铜。低温捕获装置捕获作为反应副产物产生的Cu（II）（hfac）2 。

38. 发明授权

US06919268B1 Method of manufacturing a WN contact plug 失效
标题翻译：制造WN接触塞的方法
公开(公告)号：US06919268B1
公开(公告)日：2005-07-19
申请号：US10451598
申请日：2001-12-25
申请人： Hideaki Yamasaki , Yumiko Kawano
发明人： Hideaki Yamasaki , Yumiko Kawano
IPC分类号： H01L21/285 , H01L21/768 , H01L21/4763
CPC分类号： H01L21/76877 , H01L21/28556 , H01L21/28568
摘要： WF6 is used as a source gas of tungsten, and NH3 is used as a source gas of nitrogen. The partial pressure of WF6 is set to be higher than that of NH3. The substrate temperature is set to about 400° C. to 450° C. Tungsten nitride is deposited and then heated, to form a contact plug (106).
摘要翻译： WF 6用作钨的源气体，NH 3被用作氮的源气体。 WF 6分压的分压设定为高于NH 3的分压。衬底温度设定为约400℃至450℃。沉积氮化钨，然后加热，形成接触塞（106）。

39. 发明授权

US06797068B1 Film forming unit 失效
标题翻译：成膜单元
公开(公告)号：US06797068B1
公开(公告)日：2004-09-28
申请号：US10049283
申请日：2002-02-11
申请人： Hideaki Yamasaki , Takashi Mochizuki , Susumu Arima , Yumiko Kawano
发明人： Hideaki Yamasaki , Takashi Mochizuki , Susumu Arima , Yumiko Kawano
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/45589 , C23C16/4585 , H01L21/68721 , H01L21/68735
摘要： A film-forming unit of the invention includes a processing container in which a vacuum can be created, a stage arranged in the processing container, on which an object to be processed is placed, a process-gas supplying means for supplying a process gas into the processing container, and a heating means for heating the object to be processed placed on the stage. A division wall surrounds a lateral side and a lower side of the stage. An inert gas is introduced into a stage-side region surrounded by the division wall, by an inert-gas supplying means. A gap-forming member is arranged in such a manner that its inner peripheral portion is arranged above a peripheral portion of the object to be processed placed on the stage via a gap and its outer peripheral portion is arranged above the division wall via a gap.
摘要翻译：本发明的成膜单元包括其中可以产生真空的处理容器，设置在处理容器中的待处理物体的阶段，用于将处理气体供应到处理气体供应装置处理容器和用于加热被放置在台架上的待处理物体的加热装置。分隔壁围绕台的侧面和下侧。通过惰性气体供给装置将惰性气体引入由分隔壁包围的载物台侧区域。间隙形成构件被布置成使得其内周部分经由间隙布置在待处理物体的周边部分上，并且其外周部分经由间隙布置在分隔壁的上方。

40. 发明授权

US06486063B2 Semiconductor device manufacturing method for a copper connection 失效
标题翻译：一种用于铜连接的半导体器件制造方法
公开(公告)号：US06486063B2
公开(公告)日：2002-11-26
申请号：US09793896
申请日：2001-02-28
申请人： Hideaki Yamasaki , Yumiko Kawano
发明人： Hideaki Yamasaki , Yumiko Kawano
IPC分类号： H01L2144
CPC分类号： H01L21/76843 , H01L21/28556 , H01L23/5226 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： In a semiconductor device manufacturing method, an interlevel insulating film is formed on a silicon substrate. A trench is formed in the interlevel insulating film. A lower underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition to cover a bottom surface and side surface of the trench. An upper underlying film made of a tungsten-based material is formed by thermal chemical vapor deposition on an entire region on the lower underlying film. A copper film made of copper fills the trench. The upper underlying film is formed in accordance with thermal chemical vapor deposition by supplying a tungsten source gas and the other source gas such that the other source gas is supplied in an amount lager than that of the tungsten source gas. The lower underlying film is formed in accordance with thermal chemical vapor deposition by increasing a content of the tungsten source gas to be larger than to that of the other source gas in formation of the lower underlying film.
摘要翻译：在半导体器件制造方法中，在硅衬底上形成层间绝缘膜。在层间绝缘膜中形成沟槽。通过热化学气相沉积形成由钨基材料制成的下基底膜以覆盖沟槽的底表面和侧表面。由钨基材料制成的上基底膜通过热化学气相沉积形成在下层薄膜上的整个区域上。由铜制成的铜膜填充沟槽。根据热化学气相沉积，通过供给钨源气体和其它原料气体，使得其它源气体的供给量比钨源气体的量大，形成上层膜。根据热化学气相沉积，通过将钨源气体的含量大于其它源气体的含量来形成下基底膜，以形成下基底膜。

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