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1. 发明授权

US06989321B2 Low-pressure deposition of metal layers from metal-carbonyl precursors 有权
标题翻译：金属 - 羰基前驱体金属层的低压沉积
公开(公告)号：US06989321B2
公开(公告)日：2006-01-24
申请号：US10673908
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： C23C16/16 , H01L21/28556
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.
摘要翻译：通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） CO 2，CO 2，CO 2，CO 2，CO 2，CO 2，CO 2， Re（CO）10，Cr（CO）6和Ru 3（CO）3， 12个前体。在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

2. 发明申请

US20050233079A1 Film formation method 有权
标题翻译：成膜方法
公开(公告)号：US20050233079A1
公开(公告)日：2005-10-20
申请号：US11155575
申请日：2005-06-20
申请人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
发明人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
IPC分类号： C23C16/18 , C23C16/02 , C23C16/16 , C23C16/455 , H01L21/28 , H01L21/285 , C23C16/00 , H05H1/24
CPC分类号： C23C16/455 , C23C16/16 , H01L21/28556
摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.
摘要翻译：公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

3. 发明授权

US07344754B2 Film formation method 有权
标题翻译：成膜方法
公开(公告)号：US07344754B2
公开(公告)日：2008-03-18
申请号：US11155575
申请日：2005-06-20
申请人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
发明人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
IPC分类号： C23C16/00 , B05D3/00
CPC分类号： C23C16/455 , C23C16/16 , H01L21/28556
摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.
摘要翻译：公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

4. 发明授权

US07063871B2 CVD process capable of reducing incubation time 失效
标题翻译： CVD工艺能够减少孵化时间
公开(公告)号：US07063871B2
公开(公告)日：2006-06-20
申请号：US10617819
申请日：2003-07-14
申请人： Hideaki Yamasaki , Tatsuo Hatano , Tsukasa Matsuda , Taro Ikeda , Kazuhito Nakamura , Koumei Matsuzawa , Yumiko Kawano , Mitsuhiro Tachibana
发明人： Hideaki Yamasaki , Tatsuo Hatano , Tsukasa Matsuda , Taro Ikeda , Kazuhito Nakamura , Koumei Matsuzawa , Yumiko Kawano , Mitsuhiro Tachibana
IPC分类号： C23C16/16
CPC分类号： C23C16/16
摘要： A metal CVD process includes a step (A) of introducing a gaseous source material containing a metal carbonyl compound into a process space adjacent to a surface of a substrate to be processed in such a manner that the metal carbonyl compound has a first partial pressure, and a step (B) of depositing a metal film on the surface of the substrate by introducing a gaseous source material containing the metal carbonyl compound into the process space in such a mater that the metal carbonyl compound has a second, smaller partial pressure. The step (A) is conducted such that there is caused no substantial deposition of the metal film on the substrate.
摘要翻译：金属CVD法包括将含有羰基金属化合物的气态源材料以与金属羰基化合物具有第一分压的方式相连接的待处理基板的表面的工艺空间引入的工序（A）以及在金属羰基化合物具有第二较小分压的情况下，通过将含有羰基金属化合物的气态源材料引入到工艺空间中，在基板的表面上沉积金属膜的工序（B）。进行步骤（A），使得金属膜不会在基板上实质上沉积。

5. 发明申请

US20050070100A1 Low-pressure deposition of metal layers from metal-carbonyl precursors 有权
标题翻译：金属 - 羰基前驱体金属层的低压沉积
公开(公告)号：US20050070100A1
公开(公告)日：2005-03-31
申请号：US10673908
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , C23C16/44 , H01L21/285 , H01L21/44
CPC分类号： C23C16/16 , H01L21/28556
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.
摘要翻译：通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在本发明的一个实施方案中，金属羰基前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12，Re 2 （CO）10，Cr（CO）6和Ru 3（CO）12前体）。在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

6. 发明授权

US06924223B2 Method of forming a metal layer using an intermittent precursor gas flow process 有权
标题翻译：使用间歇性前体气体流动方法形成金属层的方法
公开(公告)号：US06924223B2
公开(公告)日：2005-08-02
申请号：US10673646
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra , Andrew H Simon , John J Yurkas
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra , Andrew H Simon , John J Yurkas
IPC分类号： C23C16/04 , C23C16/16 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/16 , C23C16/4408 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.
摘要翻译：提供了一种使用间歇式前体气体流动方法在基板上形成金属层的方法。该方法包括将衬底暴露于还原气体，同时将衬底暴露于羰基金属前体气体的脉冲。进行该过程，直到在基底上形成具有所需厚度的金属层。金属层可以形成在基板上，或者可以在金属成核层上形成金属层。

7. 发明申请

US20050079708A1 Method of depositing metal layers from metal-carbonyl precursors 有权
标题翻译：从金属羰基前体沉积金属层的方法
公开(公告)号：US20050079708A1
公开(公告)日：2005-04-14
申请号：US10673648
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra
IPC分类号： C23C16/16 , H01L21/285 , H01L21/768 , H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76841
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.
摘要翻译：一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO）6，Co 2（CO）8，Rh 4（CO）12， Re 2（CO）10，Cr（CO）6和Ru 3（CO）12）。在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的基底温度和约200mTorr的室压下从包含W（CO）6前体的工艺气体中沉积W层。

8. 发明申请

US20050069632A1 Method of forming a metal layer using an intermittent precursor gas flow process 有权
公开(公告)号：US20050069632A1
公开(公告)日：2005-03-31
申请号：US10673646
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
IPC分类号： C23C16/04 , C23C16/16 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/768 , B05D5/12 , H01L21/4763
CPC分类号： C23C16/45523 , C23C16/045 , C23C16/16 , C23C16/4408 , H01L21/28556 , H01L21/76843 , H01L21/76876 , H01L21/76877
摘要： A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.

9. 发明授权

US07078341B2 Method of depositing metal layers from metal-carbonyl precursors 有权
标题翻译：从金属羰基前体沉积金属层的方法
公开(公告)号：US07078341B2
公开(公告)日：2006-07-18
申请号：US10673648
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
IPC分类号： H01L21/44
CPC分类号： H01L21/76843 , C23C16/16 , H01L21/28556 , H01L21/76841
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process. The TCVD process utilizes high flow rate of a dilute process gas containing a metal-carbonyl precursor to deposit a metal layer. In one embodiment of the invention, the metal-carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12. In another embodiment of the invention, a method is provided for depositing a W layer from a process gas comprising a W(CO)6 precursor at a substrate temperature of about 410° C. and a chamber pressure of about 200 mTorr.
摘要翻译：一种通过热化学气相沉积（TCVD）工艺在半导体衬底上沉积金属层的方法。 TCVD工艺利用含有羰基金属前体的稀释工艺气体的高流速来沉积金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） Co（CO）8，Rh 4（CO）12，SO 2，CO 2，（CO）10，Cr（CO）6和Ru 3（CO）_{12 。在本发明的另一个实施方案中，提供了一种方法，用于在约410℃的衬底温度下从包含W（CO）6 N 2前体的工艺气体中沉积W层，约200毫托。}

10. 发明授权

US08029621B2 Raw material feeding device, film formation system and method for feeding gaseous raw material 有权
标题翻译：原料给料装置，成膜系统和气态原料供料方法
公开(公告)号：US08029621B2
公开(公告)日：2011-10-04
申请号：US12067714
申请日：2006-07-25
申请人： Hideaki Yamasaki , Yumiko Kawano
发明人： Hideaki Yamasaki , Yumiko Kawano
IPC分类号： C23C16/00
CPC分类号： C23C16/4481
摘要： A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side.
摘要翻译：将通过将固体原料升华形成的气态原料供给到成膜系统的原料供给装置包括：将固体原料保持在其中的原料容器，放置在容器第一侧的第一加热单元，放置在第二侧的第二加热单元，第一温度控制单元，用于进行控制第一和第二加热单元的第一过程，以使第一侧的温度高于第二侧的温度，从而使固体原料设置在第一侧的材料和第二温度控制单元，用于进行控制第一和第二加热单元的第二过程，以使第二侧的温度高于第一侧的温度，从而使设置的固体原料升华在第二边。

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