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1. 发明授权

US06797068B1 Film forming unit 失效
标题翻译：成膜单元
公开(公告)号：US06797068B1
公开(公告)日：2004-09-28
申请号：US10049283
申请日：2002-02-11
申请人： Hideaki Yamasaki , Takashi Mochizuki , Susumu Arima , Yumiko Kawano
发明人： Hideaki Yamasaki , Takashi Mochizuki , Susumu Arima , Yumiko Kawano
IPC分类号： C23C1600
CPC分类号： C23C16/45521 , C23C16/45589 , C23C16/4585 , H01L21/68721 , H01L21/68735
摘要： A film-forming unit of the invention includes a processing container in which a vacuum can be created, a stage arranged in the processing container, on which an object to be processed is placed, a process-gas supplying means for supplying a process gas into the processing container, and a heating means for heating the object to be processed placed on the stage. A division wall surrounds a lateral side and a lower side of the stage. An inert gas is introduced into a stage-side region surrounded by the division wall, by an inert-gas supplying means. A gap-forming member is arranged in such a manner that its inner peripheral portion is arranged above a peripheral portion of the object to be processed placed on the stage via a gap and its outer peripheral portion is arranged above the division wall via a gap.
摘要翻译：本发明的成膜单元包括其中可以产生真空的处理容器，设置在处理容器中的待处理物体的阶段，用于将处理气体供应到处理气体供应装置处理容器和用于加热被放置在台架上的待处理物体的加热装置。分隔壁围绕台的侧面和下侧。通过惰性气体供给装置将惰性气体引入由分隔壁包围的载物台侧区域。间隙形成构件被布置成使得其内周部分经由间隙布置在待处理物体的周边部分上，并且其外周部分经由间隙布置在分隔壁的上方。

2. 发明授权

US07361595B2 Transition metal thin film forming method 失效
标题翻译：过渡金属薄膜成型方法
公开(公告)号：US07361595B2
公开(公告)日：2008-04-22
申请号：US10471588
申请日：2002-03-14
申请人： Hideaki Yamasaki , Susumu Arima , Yumiko Kawano
发明人： Hideaki Yamasaki , Susumu Arima , Yumiko Kawano
IPC分类号： H01L21/44
CPC分类号： H01L28/65 , C23C16/0218 , C23C16/0236 , C23C16/18 , C23C16/452 , C23C16/45523 , H01L21/3105 , H01L21/31612 , H01L28/55 , H01L28/60 , H01L28/90
摘要： A semiconductor substrate is placed in a predetermined processing vessel, and oxygen gas activated by, e.g. conversion into a plasma is supplied onto an insulating film. The surfaces of an interlevel insulating film and insulating film are exposed to the activated oxygen gas. After that, a transition metal film, e.g. a ruthenium film, is formed by CVD.
摘要翻译：将半导体衬底放置在预定的处理容器中，并且通过例如氧化铝活化的氧气。将转换成等离子体供给到绝缘膜上。层间绝缘膜和绝缘膜的表面暴露于活性氧气。之后，过渡金属膜，例如通过CVD形成钌膜。

3. 发明授权

US06966936B2 Processing system, evacuating system for processing system, low-pressure CVD system, and evacuating system and trapping device for low-pressure CVD system 失效
标题翻译：加工系统，加工系统疏散系统，低压CVD系统，排气系统和低压CVD系统的捕集装置
公开(公告)号：US06966936B2
公开(公告)日：2005-11-22
申请号：US10277914
申请日：2002-10-23
申请人： Hideaki Yamasaki , Yumiko Kawano , Kenichi Kubo , Susumu Arima
发明人： Hideaki Yamasaki , Yumiko Kawano , Kenichi Kubo , Susumu Arima
IPC分类号： B01D53/64 , C23C16/18 , C23C16/44 , C23C16/455 , H01L21/285 , H01L21/31 , H01L21/3205 , H01L23/52 , B01D45/08
CPC分类号： C23C16/18 , C23C16/4412 , C23C16/45593 , H01L21/28556 , Y02C20/30 , Y02P70/605 , Y10S55/15
摘要： An object of the present invention is to ensure the stable operation of a vacuum pump for discharging an unused source gas and reaction byproduct gases from a low-pressure processing chamber, to recover the reaction byproducts efficiently for the effective utilization of resources and reduction of running costs. A low-pressure CVD system has a processing vessel (10) for carrying out a low-pressure CVD process for forming a copper film, a source gas supply unit (12) for supplying an organic copper compound as a source gas, such as Cu(I)hfacTMVS, into the processing vessel (10), and an evacuating system (14) for evacuating the processing vessel (10). The evacuating system (14) includes a vacuum pump (26), a high-temperature trapping device (28) disposed above the vacuum pump (26) with respect to the flowing direction of a gas, and a low-temperature trapping device (30) disposed below the vacuum pump with respect to the flowing direction of a gas. The high-temperature trapping device (28) decomposes the unused Cu(I)hfacTMVS contained in a gas sucked out of the processing vessel (10) to trap metallic copper. The low-temperature trapping device traps Cu(II)(hfac)2 produced as a reaction byproduct.
摘要翻译：本发明的目的是为了确保真空泵的稳定运行，用于从低压处理室排出未使用的源气体和反应副产物气体，以有效地回收反应副产物以有效利用资源并减少运行费用低压CVD系统具有用于进行用于形成铜膜的低压CVD工艺的处理容器（10），用于供应有机铜化合物作为源气体的源气体供给单元（12），例如Cu （I）hfacTMVS进入处理容器（10），以及用于抽空处理容器（10）的抽空系统（14）。抽真空系统（14）包括真空泵（26），相对于气体的流动方向设置在真空泵（26）上方的高温捕集装置（28）和低温捕集装置（30））相对于气体的流动方向设置在真空泵下方。高温捕集装置（28）分解从处理容器（10）中吸出的气体中所含的未使用的Cu（I）hfacTMVS，以捕获金属铜。低温捕获装置捕获作为反应副产物产生的Cu（II）（hfac）2 。

4. 发明授权

US06399484B1 Semiconductor device fabricating method and system for carrying out the same 失效
标题翻译：半导体器件制造方法及其实施方法
公开(公告)号：US06399484B1
公开(公告)日：2002-06-04
申请号：US09425971
申请日：1999-10-25
申请人： Hideaki Yamasaki , Satoshi Yonezawa , Susumu Arima , Yumiko Kawano , Mitsuhiro Tachibana , Keizo Hosoda
发明人： Hideaki Yamasaki , Satoshi Yonezawa , Susumu Arima , Yumiko Kawano , Mitsuhiro Tachibana , Keizo Hosoda
IPC分类号： H01L214763
CPC分类号： C23C16/45565 , C23C16/0281 , C23C16/34 , C23C16/4404 , C23C16/4405 , C23C16/4557 , C23C16/45574 , H01L21/28556 , H01L21/28568 , H01L21/32051
摘要： A semiconductor device fabricating method includes a preparatory process that brings a first source gas containing tungsten atoms into contact with a workpiece and that does not bring a second source gas containing nitrogen atoms into contact with the workpiece, and a film forming process that forms a tungsten nitride film on the workpiece by using the first and the second source gases so as to fabricate a semiconductor device. The semiconductor device fabricating method is capable of preventing the tungsten nitride film from peeling off from a layer underlying the same when the tungsten nitride film is subjected to heat treatment.
摘要翻译：一种半导体器件制造方法，包括使含有钨原子的第一源气体与工件接触并且不会使含有氮原子的第二源气体与工件接触的制备方法，以及形成钨通过使用第一和第二源气体在工件上形成氮化物膜，以制造半导体器件。当氮化钨膜进行热处理时，半导体器件制造方法能够防止氮化钨膜从其下面的层剥离。

5. 发明授权

US06436203B1 CVD apparatus and CVD method 失效
标题翻译： CVD装置和CVD法
公开(公告)号：US06436203B1
公开(公告)日：2002-08-20
申请号：US09551393
申请日：2000-04-18
申请人： Takeshi Kaizuka , Takashi Horiuchi , Masami Mizukami , Takashi Mochizuki , Yumiko Kawano , Hideaki Yamasaki
发明人： Takeshi Kaizuka , Takashi Horiuchi , Masami Mizukami , Takashi Mochizuki , Yumiko Kawano , Hideaki Yamasaki
IPC分类号： B05D136
CPC分类号： C23C16/4481 , C23C16/18 , C23C16/20 , C23C16/45565 , C23C16/45572 , C23C16/45574
摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.
摘要翻译：本发明提供了用于形成Al / Cu多层膜的CVD装置和CVD方法。在包括用于放置半导体晶片W的室，用于安装半导体晶片W的基座的CVD装置中形成Al / Cu多层膜，用于将气化的Al原料引入到室中的Al原料供给系统 Cu原料供给系统，用于将气化的Cu原料引入室中。 Al / Cu多层膜通过重复一系列步骤而形成，该步骤包括将Al原料气体引入室中，通过CVD法将Al膜沉积在半导体晶片W上，随后在室中产生等离子体，其中引入Cu原料气体并通过CVD法将Cu膜沉积在半导体晶片W上。对这样得到的Al / Cu多层膜进行加热处理（退火），形成所需的Al / Cu多层膜。

6. 发明授权

US06089184A CVD apparatus and CVD method 失效
公开(公告)号：US06089184A
公开(公告)日：2000-07-18
申请号：US92060
申请日：1998-06-05
申请人： Takeshi Kaizuka , Takashi Horiuchi , Masami Mizukami , Takashi Mochizuki , Yumiko Kawano , Hideaki Yamasaki
发明人： Takeshi Kaizuka , Takashi Horiuchi , Masami Mizukami , Takashi Mochizuki , Yumiko Kawano , Hideaki Yamasaki
IPC分类号： C23C16/18 , C23C16/20 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/00
CPC分类号： C23C16/4481 , C23C16/18 , C23C16/20 , C23C16/45565 , C23C16/45572 , C23C16/45574
摘要： The present invention provides a CVD apparatus and a CVD method for use in forming an Al/Cu multilayered film. The Al/Cu multilayered film is formed in the CVD apparatus comprising a chamber for placing a semiconductor wafer W, a susceptor for mounting the semiconductor wafer W thereon, an Al raw material supply system for introducing a gasified Al raw material into the chamber and a Cu raw material supply system for introducing a gasified Cu raw material into the chamber. The Al/Cu multilayered film is formed by repeating a series of steps consisting of introducing the Al raw material gas into the chamber, depositing the Al film on the semiconductor wafer W by a CVD method, followed by generating a plasma in the chamber in which the Cu raw material gas has been introduced and depositing the Cu film on the semiconductor wafer W by a CVD method. The Al/Cu multilayered film thus obtained is subjected to a heating treatment (annealing), thereby forming a desired Al/Cu multilayered film.

7. 发明授权

US08029621B2 Raw material feeding device, film formation system and method for feeding gaseous raw material 有权
标题翻译：原料给料装置，成膜系统和气态原料供料方法
公开(公告)号：US08029621B2
公开(公告)日：2011-10-04
申请号：US12067714
申请日：2006-07-25
申请人： Hideaki Yamasaki , Yumiko Kawano
发明人： Hideaki Yamasaki , Yumiko Kawano
IPC分类号： C23C16/00
CPC分类号： C23C16/4481
摘要： A raw material feeding device for feeding a gaseous raw material formed by sublimating a solid raw material to a film formation system includes a raw material container for holding the solid raw material therein, a first heating unit placed at a first side of the container, a second heating unit placed at a second side thereof, the first temperature control unit for conducting a first process of controlling the first and the second heating unit to make the temperature of the first side higher than that of the second side to thereby sublimate the solid raw material disposed at the first side, and the second temperature control unit for conducting a second process of controlling the first and the second heating unit to make the temperature of the second side higher than that of the first side to thereby sublimate the solid raw material disposed at the second side.
摘要翻译：将通过将固体原料升华形成的气态原料供给到成膜系统的原料供给装置包括：将固体原料保持在其中的原料容器，放置在容器第一侧的第一加热单元，放置在第二侧的第二加热单元，第一温度控制单元，用于进行控制第一和第二加热单元的第一过程，以使第一侧的温度高于第二侧的温度，从而使固体原料设置在第一侧的材料和第二温度控制单元，用于进行控制第一和第二加热单元的第二过程，以使第二侧的温度高于第一侧的温度，从而使设置的固体原料升华在第二边。

8. 发明授权

US06989321B2 Low-pressure deposition of metal layers from metal-carbonyl precursors 有权
标题翻译：金属 - 羰基前驱体金属层的低压沉积
公开(公告)号：US06989321B2
公开(公告)日：2006-01-24
申请号：US10673908
申请日：2003-09-30
申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
发明人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Masahito Sugiura , Yumiko Kawano , Gert J Leusink , Fenton R McFeely , Sandra G. Malhotra
IPC分类号： H01L21/20 , H01L21/44
CPC分类号： C23C16/16 , H01L21/28556
摘要： A method for depositing metal layers on semiconductor substrates by a thermal chemical vapor deposition (TCVD) process includes introducing a process gas containing a metal carbonyl precursor in a process chamber and depositing a metal layer on a substrate. The TCVD process utilizes a short residence time for the gaseous species in the processing zone above the substrate to form a low-resistivity metal layer. In one embodiment of the invention, the metal carbonyl precursor can be selected from at least one of W(CO)6, Ni(CO)4, Mo(CO)6, Co2(CO)8, Rh4(CO)12, Re2(CO)10, Cr(CO)6, and Ru3(CO)12 precursors. In another embodiment of the invention, a method is provided for depositing low-resistivity W layers at substrate temperatures below about 500° C., by utilizing a residence time less than about 120 msec.
摘要翻译：通过热化学气相沉积（TCVD）方法在金属层上沉积金属层的方法包括在处理室中引入含有羰基金属前驱体的工艺气体并在基底上沉积金属层。 TCVD工艺利用在衬底上方的处理区域中的气态物质的短暂停留时间以形成低电阻率金属层。在本发明的一个实施方案中，羰基金属前体可以选自W（CO）6，Ni（CO）4，Mo（CO） CO 2，CO 2，CO 2，CO 2，CO 2，CO 2，CO 2， Re（CO）10，Cr（CO）6和Ru 3（CO）3， 12个前体。在本发明的另一个实施例中，提供了一种通过利用小于约120毫秒的停留时间在低于约500℃的衬底温度下沉积低电阻W层的方法。

9. 发明申请

US20050233079A1 Film formation method 有权
标题翻译：成膜方法
公开(公告)号：US20050233079A1
公开(公告)日：2005-10-20
申请号：US11155575
申请日：2005-06-20
申请人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
发明人： Hideaki Yamasaki , Tatsuo Hatano , Yumiko Kawano
IPC分类号： C23C16/18 , C23C16/02 , C23C16/16 , C23C16/455 , H01L21/28 , H01L21/285 , C23C16/00 , H05H1/24
CPC分类号： C23C16/455 , C23C16/16 , H01L21/28556
摘要： A method of forming a metal film using a metal carbonyl compound as a material is disclosed that includes the steps of: (a) introducing a reactive gas into a space near a surface of a substrate to be processed; and (b) introducing a gaseous phase material including the metal carbonyl compound into the space on the surface of the substrate to be processed, and depositing the metal film on the surface of the substrate to be processed after step (a). Step (a) is executed in such a manner as to prevent substantial deposition of the metal film on the substrate to be processed.
摘要翻译：公开了使用羰基金属化合物作为材料形成金属膜的方法，其包括以下步骤：（a）将反应性气体引入待处理的基板的表面附近的空间; 和（b）将包含羰基金属化合物的气相材料引入到待处理基板的表面上的空间中，并且在步骤（a）之后将金属膜沉积在待处理基板的表面上。执行步骤（a），以防止金属膜在待处理的基板上的大量沉积。

10. 发明申请

US20090197410A1 METHOD OF FORMING TASIN FILM 审中-公开
标题翻译：形成电影的方法
公开(公告)号：US20090197410A1
公开(公告)日：2009-08-06
申请号：US12306096
申请日：2007-06-21
申请人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano
发明人： Kazuhito Nakamura , Hideaki Yamasaki , Yumiko Kawano
IPC分类号： H01L21/443
CPC分类号： C23C16/34 , C23C16/52 , H01L21/28097 , H01L21/28556 , H01L29/4975 , H01L29/517
摘要： A substrate is disposed in a processing chamber. An organic Ta compound gas having Ta═N bond, a Si-containing gas and a N-containing gas are introduced into the processing chamber to form a TaSiN film on the substrate by CVD. In this film formation, at least one of a partial pressure of the Si-containing gas in the processing chamber, a total pressure in the processing chamber, a film forming temperature and a partial pressure of the N-containing gas in the processing chamber is controlled to thereby regulate Si concentration in the film. Particularly, when SiH4 gas is used as the Si-containing gas, the SiH4 gas partial pressure is determined based on the fact that the serried Si concentration in the film under giving process conditions can be expressed as a linear function involving the logarithm of the partial pressure of the SiH4 gas.
摘要翻译：衬底设置在处理室中。将具有Ta-N键的有机Ta化合物气体，含Si气体和含N气体引入到处理室中，通过CVD在衬底上形成TaSiN膜。在该膜形成中，处理室中的含Si气体的分压，处理室中的总压，成膜温度和处理室中的含N气体的分压中的至少一个为从而调节膜中的Si浓度。特别地，当使用SiH 4气体作为含Si气体时，SiH 4气体分压基于以下事实来确定：在给定工艺条件下膜中的塞状Si浓度可以表示为包括部分的对数的线性函数 SiH4气体的压力。

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