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31. 发明授权

US6001730A Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers 失效
标题翻译：用于抛光使用钽基阻挡层的铜互连的化学机械抛光（CMP）浆料
公开(公告)号：US6001730A
公开(公告)日：1999-12-14
申请号：US954191
申请日：1997-10-20
申请人： Janos Farkas , Rajeev Bajaj , Melissa Freeman , David K. Watts , Sanjit Das
发明人： Janos Farkas , Rajeev Bajaj , Melissa Freeman , David K. Watts , Sanjit Das
IPC分类号： C09G1/02 , H01L21/321 , H01L21/768 , H01L1/00
CPC分类号： H01L21/76873 , C09G1/02 , H01L21/3212 , H01L21/7684 , H01L21/76843 , H01L21/76877
摘要： A method for forming a copper interconnect on an integrated circuit (IC) begins by forming a dielectric layer (20) having an opening. A tantalum-based barrier layer (21), such as TaN or TaSiN, is formed within the opening in the layer (20). A copper layer (22) is formed over the barrier layer (21). A first CMP process is used to polish the copper (22) to expose portions of the barrier (21). A second CMP process which is different from the first CMP process is then used to polish exposed portions of the layer (21) faster than the dielectric layer (20) or the copper layer (22). After this two-step CMP process, a copper interconnect having a tantalum-based barrier is formed across the integrated circuit substrate (12).
摘要翻译：在集成电路（IC）上形成铜互连的方法通过形成具有开口的电介质层（20）开始。在层（20）的开口内形成有TaN或TaSiN等钽系阻挡层（21）。在阻挡层（21）的上方形成铜层（22）。第一CMP工艺用于抛光铜（22）以暴露阻挡层（21）的部分。然后使用与第一CMP工艺不同的第二CMP工艺来比电介质层（20）或铜层（22）更快地抛光层（21）的暴露部分。在该两步CMP工艺之后，跨越集成电路基板（12）形成具有钽基阻挡层的铜互连。

32. 发明授权

US5928962A Process for forming a semiconductor device 失效
标题翻译：用于形成半导体器件的工艺
公开(公告)号：US5928962A
公开(公告)日：1999-07-27
申请号：US88013
申请日：1998-06-01
申请人： Janos Farkas , Sanjit K. Das , George R. Meyer
发明人： Janos Farkas , Sanjit K. Das , George R. Meyer
IPC分类号： B24B37/04 , H01L21/306 , H01L21/3105 , H01L21/66 , H01L21/00
CPC分类号： H01L22/20 , B24B37/04 , H01L21/31053
摘要： Physical properties of alumina particles in a chemical-mechanical polishing slurry delivery loop (28) are measured using a titration technique (44). Examples of the physical properties include crystallographic phase, surface charge, and surface charge density. The physical properties are correlated to a polishing rate (46). Specification limits are generated using the correlated data (482 and 486). The specification limits are used to determine if no adjustments are required to the polishing parameters (484), if adjustments are required to polishing parameters (488) or if the slurry requires replacement (489). This process can be automated and integrated into a conventional chemical-mechanical polishing processing system (20).
摘要翻译：使用滴定技术（44）测量化学机械抛光浆料输送回路（28）中氧化铝颗粒的物理性质。物理性质的实例包括结晶相，表面电荷和表面电荷密度。物理性质与抛光速率相关（46）。使用相关数据（482和486）生成规格限制。规范限制用于确定抛光参数（484）是否不需要调整，如果需要调整抛光参数（488）或如果浆料需要更换（489）。该过程可以自动化并且集成到常规的化学 - 机械抛光处理系统（20）中。

33. 发明授权

US5773364A Method for using ammonium salt slurries for chemical mechanical polishing (CMP) 失效
标题翻译：使用铵盐浆料进行化学机械抛光（CMP）的方法
公开(公告)号：US5773364A
公开(公告)日：1998-06-30
申请号：US734566
申请日：1996-10-21
申请人： Janos Farkas , Melissa Freeman
发明人： Janos Farkas , Melissa Freeman
IPC分类号： B24B1/00 , H01L21/304 , H01L21/3205 , H01L21/321 , H01L21/00
CPC分类号： H01L21/3212
摘要： A method for chemical/mechanical polishing (CMP) uses a slurry (22). This slurry (22) contains one or more ammonium salts, such as ammonium nitride (NH.sub.4 NO.sub.3), as an oxidizing/etching species within the slurry (22). This slurry (22) is used to polish a metal layer (14) whereby the ammonium salt does not create slurry distribution problems, does not contain metallic species, does not contain mobile ions like potassium, and is environmentally safe.
摘要翻译：化学/机械抛光（CMP）的方法使用浆料（22）。该浆料（22）含有一种或多种铵盐，例如氮化铵（NH 4 NO 3），作为浆料（22）内的氧化/蚀刻物质。这种浆料（22）用于抛光金属层（14），由此铵盐不会产生浆料分布问题，不含金属物质，不含钾等可移动离子，对环境无害。

34. 发明授权

US08174992B2 Fault localisation in multiple spanning tree based architectures 有权
标题翻译：多个基于生成树的架构中的故障定位
公开(公告)号：US08174992B2
公开(公告)日：2012-05-08
申请号：US12525713
申请日：2007-02-08
申请人： Janos Farkas , Wei Zhao
发明人： Janos Farkas , Wei Zhao
IPC分类号： H04L12/26
CPC分类号： H04L41/0677 , H04L45/48
摘要： A method of localizing a fault in a network is disclosed. The network comprises nodes (SW1 . . . SW4) links, and edge-nodes (EN1 . . . EN4) arranged as a plurality of spanning trees (T1, T2,T3), the spanning trees being partially disjoint. The network further comprises means for network management. The method comprising the steps of receiving information on the configuration of the plurality of tree topologies in the network; monitoring connectivity in the network; upon detection of a loss of connectivity in the network, identifying the failed tree(s), and determining the network elements common to the failed tree(s).
摘要翻译：公开了一种定位网络故障的方法。网络包括布置为多个生成树（T1，T2，T3）的节点（SW1 ... SW4）链接和边缘节点（EN1 ... EN4），生成树是部分不相交的。网络还包括用于网络管理的装置。该方法包括以下步骤：接收关于网络中的多个树形拓扑结构的信息; 监控网络中的连通性; 在检测到网络中的连通性损失时，识别故障树，以及确定故障树共有的网络元件。

35. 发明授权

US07939482B2 Cleaning solution for a semiconductor wafer 有权
标题翻译：半导体晶圆清洗液
公开(公告)号：US07939482B2
公开(公告)日：2011-05-10
申请号：US11914870
申请日：2005-05-25
申请人： Janos Farkas
发明人： Janos Farkas
IPC分类号： H01L21/306 , C11D1/72
CPC分类号： H01L21/02052 , C11D1/722 , C11D3/044 , C11D3/3947 , C11D11/0023 , C11D11/0047
摘要： A cleaning solution for a semiconductor wafer comprises ammonia, hydrogen peroxide, a complexing agent and a block copolymer surfactant diluted in water. The cleaning solution can be used in single wafer cleaning tools to remove both particulate contaminants and metallic residues.
摘要翻译：用于半导体晶片的清洁溶液包括氨，过氧化氢，络合剂和在水中稀释的嵌段共聚物表面活性剂。清洁溶液可用于单晶圆清洁工具，以去除颗粒污染物和金属残留物。

36. 发明授权

US07883393B2 System and method for removing particles from a polishing pad 有权
标题翻译：用于从抛光垫去除颗粒的系统和方法
公开(公告)号：US07883393B2
公开(公告)日：2011-02-08
申请号：US12093113
申请日：2005-11-08
申请人： Srdjan Kordic , Sebastien Petitdidier , Janos Farkas , Silvio Del Monaco
发明人： Srdjan Kordic , Sebastien Petitdidier , Janos Farkas , Silvio Del Monaco
IPC分类号： B24B49/00
CPC分类号： B23H5/08 , B24B53/001 , B24B53/017 , C25F1/00
摘要： A system for removing particles from a polishing pad to improve the efficiency of the removal of material by the polishing pad as part of a chemical-mechanical polishing process, the system comprising a polishing pad; a fluid dispenser arranged to dispense a fluid on the polishing pad; and removal means, wherein the removal means include a heater for increasing the temperature of the fluid dispensed on the polishing pad, and/or voltage means for coupling the polishing pad to a voltage source for repelling charged particles from the polishing pad surface while the fluid dispenser is dispensing the fluid on the polishing pad.
摘要翻译：一种用于从抛光垫去除颗粒以提高抛光垫作为化学机械抛光工艺的一部分去除材料的效率的系统，该系统包括抛光垫; 流体分配器，布置成在抛光垫上分配流体; 和去除装置，其中所述去除装置包括用于增加分配在抛光垫上的流体的温度的加热器和/或用于将抛光垫耦合到电压源的电压装置，用于从抛光垫表面排斥带电粒子，同时流体分配器在抛光垫上分配流体。

37. 发明授权

US07803719B2 Semiconductor device including a coupled dielectric layer and metal layer, method of fabrication thereof, and passivating coupling material comprising multiple organic components for use in a semiconductor device 有权
标题翻译：包括耦合电介质层和金属层的半导体器件，其制造方法和包含用于半导体器件的多个有机部件的钝化耦合材料
公开(公告)号：US07803719B2
公开(公告)日：2010-09-28
申请号：US12280477
申请日：2006-02-24
申请人： Janos Farkas , Maria Luisa Calvo-Munoz , Srdjan Kordic
发明人： Janos Farkas , Maria Luisa Calvo-Munoz , Srdjan Kordic
IPC分类号： H01L21/31 , H01L23/58
CPC分类号： H01L21/76829 , C23C18/122 , C23C18/1225 , C23C18/1893 , H01L21/0206 , H01L21/02063 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3105 , H01L21/3122 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A material for passivating a dielectric layer in a semiconductor device has a molecular structure permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. The contemplated material may be constituted by multiple organic components. A semiconductor device including a layer of the passivating coupling material, and a method of manufacturing such a semiconductor device are also contemplated.
摘要翻译：用于钝化半导体器件中的电介质层的材料具有在随后的工艺步骤中允许或至少促进液相金属沉积的分子结构。预期的材料可以由多种有机组分构成。包括钝化耦合材料层的半导体器件，以及制造这种半导体器件的方法也被考虑。

38. 发明申请

US20100165884A1 Ethernet Spanning Tree Provision 审中-公开
标题翻译：以太网生成树配置
公开(公告)号：US20100165884A1
公开(公告)日：2010-07-01
申请号：US12595776
申请日：2007-04-13
申请人： Janos Farkas , Csaba Antal , Attila Takacs , Panagiotis Saltsidis
发明人： Janos Farkas , Csaba Antal , Attila Takacs , Panagiotis Saltsidis
IPC分类号： H04L12/28
CPC分类号： H04L12/462 , H04L45/00 , H04L45/02 , H04L45/12 , H04L45/42 , H04L45/48 , H04L45/50 , H04L45/66 , H04L47/13 , H04L47/70 , H04L47/724
摘要： A method and apparatus for providing a Spanning Tree to nodes on an Ethernet network. A Spanning Tree topology is calculated, and a Resource Reservation Protocol Traffic Extension path message is generated. The path message contains at least a part of the Spanning Tree topology. The path message is sent to bridges on the Ethernet network. The bridge nodes that receive the path message configure their port states depending on the information contained in the path message, and may also configure port Virtual Local Area Network membership.
摘要翻译：一种用于向以太网上的节点提供生成树的方法和装置。计算生成树拓扑，并生成资源预留协议流量扩展路径消息。路径消息至少包含生成树拓扑的一部分。路由消息发送到以太网上的网桥。接收路径消息的网桥节点根据路径消息中包含的信息配置其端口状态，并且还可以配置端口虚拟局域网成员资格。

39. 发明申请

US20090301867A1 INTEGRATED SYSTEM FOR SEMICONDUCTOR SUBSTRATE PROCESSING USING LIQUID PHASE METAL DEPOSITION 审中-公开
标题翻译：使用液相金属沉积的半导体基板处理的集成系统
公开(公告)号：US20090301867A1
公开(公告)日：2009-12-10
申请号：US12280482
申请日：2006-02-24
申请人： Janos Farkas , Cindy Goldberg , Katie Yu , Srdjan Kordic
发明人： Janos Farkas , Cindy Goldberg , Katie Yu , Srdjan Kordic
IPC分类号： C25B9/00 , B05C5/00 , B05C11/00 , C23C16/00
CPC分类号： H01L21/02126 , H01L21/02118 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/288 , H01L21/3121 , H01L21/31633 , H01L21/31695 , H01L21/67207 , H01L21/6723 , H01L21/76814 , H01L21/76843
摘要： A system for processing a semiconductor substrate during fabrication of semiconductor devices provides a plurality of semiconductor substrate processing stations in a physically integrated system, as well as a semiconductor substrate transport system for transporting a semiconductor substrate between the respective processing stations. In particular, the processing system according to the present invention favors the use of liquid phase process steps, particularly deposition process steps, instead of gas or vapor phase processing. Even more particularly, the system contemplates deposition of a metallic barrier layer 30 on the semiconductor substrate in liquid phase.
摘要翻译：在半导体器件制造期间处理半导体衬底的系统在物理集成系统中提供多个半导体衬底处理站，以及用于在各个处理站之间传输半导体衬底的半导体衬底传输系统。特别地，根据本发明的处理系统有利于使用液相工艺步骤，特别是沉积工艺步骤，而不是气相或气相处理。更具体地，系统考虑在液相中在金属阻挡层30上沉积在半导体衬底上。

40. 发明申请

US20090115031A1 SEMICONDUCTOR DEVICE INCLUDING A COUPLED DIELECTRIC LAYER AND METAL LAYER, METHOD OF FABRICATION THEREOF, AND PASSIVATING COUPLING MATERIAL COMPRISING MULTIPLE ORGANIC COMPONENTS FOR USE IN A SEMICONDUCTOR DEVICE 有权
标题翻译：包括耦合电介质层和金属层的半导体器件，其制造方法和包含多个有机组件的钝化耦合材料在半导体器件中的使用
公开(公告)号：US20090115031A1
公开(公告)日：2009-05-07
申请号：US12280477
申请日：2006-02-24
申请人： Janos Farkas , Maria Luisa Calvo-Munoz , Srdjan Kordic
发明人： Janos Farkas , Maria Luisa Calvo-Munoz , Srdjan Kordic
IPC分类号： H01L23/58 , C04B41/46 , H01L21/312 , B05D5/12
CPC分类号： H01L21/76829 , C23C18/122 , C23C18/1225 , C23C18/1893 , H01L21/0206 , H01L21/02063 , H01L21/02126 , H01L21/02216 , H01L21/02282 , H01L21/3105 , H01L21/3122 , H01L21/76814 , H01L21/76826 , H01L21/76828 , H01L21/76831 , H01L23/5329 , H01L2924/0002 , H01L2924/12044 , H01L2924/00
摘要： A material for passivating a dielectric layer in a semiconductor device has a molecular structure permitting or at least promoting liquid phase metal deposition thereon in a subsequent process step. The contemplated material may be constituted by multiple organic components. A semiconductor device including a layer of the passivating coupling material, and a method of manufacturing such a semiconductor device are also contemplated.
摘要翻译：用于钝化半导体器件中的电介质层的材料具有在随后的工艺步骤中允许或至少促进液相金属沉积的分子结构。预期的材料可以由多种有机组分构成。包括钝化耦合材料层的半导体器件，以及制造这种半导体器件的方法也被考虑。

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