专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

31. 发明授权

US06813295B2 Asymmetric InGaAsN vertical cavity surface emitting lasers 失效
标题翻译：不对称InGaAsN垂直腔表面发射激光器
公开(公告)号：US06813295B2
公开(公告)日：2004-11-02
申请号：US10106678
申请日：2002-03-25
申请人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan
发明人： Tetsuya Takeuchi , Ying-Lan Chang , David P. Bour , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01S500
CPC分类号： H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S2304/04
摘要： Various asymmetric InGaAsN VCSEL structures that are made using an MOCVD process are presented. Use of the asymmetric structure effectively eliminates aluminum contamination of the quantum well active region.
摘要翻译：提出了使用MOCVD工艺制造的各种非对称InGaAsN VCSEL结构。使用不对称结构有效地消除了量子阱活性区域的铝污染。

32. 发明授权

US06711195B2 Long-wavelength photonic device with GaAsSb quantum-well layer 有权
标题翻译：具有GaAsSb量子阱层的长波长光子器件
公开(公告)号：US06711195B2
公开(公告)日：2004-03-23
申请号：US10087422
申请日：2002-02-28
申请人： Ying-Lan Chang , Scott W. Corzine , Russell D. Dupuis , Min Soo Noh , Jae Hyun Ryou , Michael R. T. Tan , Ashish Tandon
发明人： Ying-Lan Chang , Scott W. Corzine , Russell D. Dupuis , Min Soo Noh , Jae Hyun Ryou , Michael R. T. Tan , Ashish Tandon
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/3422 , H01S5/343 , H01S5/34306
摘要： The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises InyGa1-yAsSb in which y≧0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material.
摘要翻译：长波长光子器件包括有源区，该有源区包括至少一个量子阱层材料的量子阱层，该量子阱层材料包括其中y> = 0的In y Ga 1-y As Sb，并且另外包括相应数量的势垒层包括镓和磷的阻挡层材料。阻挡层材料的导带能级大于量子阱层材料的导带能级，并且具有小于量子阱层材料的价带能级的价带能级。

33. 发明授权

US06647050B2 Flip-chip assembly for optically-pumped lasers 有权
标题翻译：用于光泵浦激光器的倒装芯片组件
公开(公告)号：US06647050B2
公开(公告)日：2003-11-11
申请号：US09954825
申请日：2001-09-18
申请人： Albert T. Yuen , Michael R. T. Tan , Dubravko Ivan Babic , Scott William Corzine
发明人： Albert T. Yuen , Michael R. T. Tan , Dubravko Ivan Babic , Scott William Corzine
IPC分类号： H01S500
CPC分类号： H01S5/18311 , H01L2224/05001 , H01L2224/05023 , H01L2224/05568 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01S5/0215 , H01S5/0224 , H01S5/02272 , H01S5/041 , H01S5/426 , H01L2224/05541 , H01L2224/05005
摘要： A short-wavelength vertical cavity surface emitting laser (VCSEL) is flip-chip bonded to a long-wavelength VCSEL. The short-wavelength VCSEL is used to optically-pump the long-wavelength VCSEL. Certain embodiments of the invention can serve as optical sources for optical fiber communication systems. Methods also are provided.
摘要翻译：短波长垂直腔表面发射激光器（VCSEL）被倒装芯片结合到长波长VCSEL。短波长VCSEL用于光泵浦长波长VCSEL。本发明的某些实施例可以用作光纤通信系统的光源。还提供了方法。

34. 发明授权

US06483862B1 System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer 失效
标题翻译：用于使用天然氧化物半导体层的发光器件和光电检测器的单片集成的系统和方法
公开(公告)号：US06483862B1
公开(公告)日：2002-11-19
申请号：US09209528
申请日：1998-12-11
申请人： Lewis B. Aronson , Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic
发明人： Lewis B. Aronson , Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic
IPC分类号： H01S500
CPC分类号： H01S5/0264 , H01L27/15 , H01S5/0425 , H01S5/183 , H01S5/2027
摘要： A light emitting device and photodetector combination having a structure in which the layer of the photodetector that contacts the light emitting device is separated from the light emitting device by a native semiconductor oxide layer that is both insulating and has a refractive index lower than that of the light emitting device and the photodetector. This configuration results in a light emitting device and photodetector structure that minimizes the capture of the spontaneous emission light output from the light emitting device by the photodetector while electrically isolating the light emitting device from the photodetector. The electrical isolation of the light emitting device from the photodetector results in a four terminal device in which the light emitting device and photodetector may be independently biased, and can therefore be operated at a very low bias voltage.
摘要翻译：一种发光器件和光电检测器组合，具有这样一种结构，其中接触发光器件的光电检测器层通过天然半导体氧化物层与发光器件分离，该天然半导体氧化物层是绝缘的并且折射率低于发光器件和光电检测器。这种配置导致发光器件和光电检测器结构，其使由光电检测器从发光器件输出的自发发射光的捕获最小化，同时将发光器件与光电检测器电隔离。发光器件与光检测器的电隔离导致四端器件，其中发光器件和光电检测器可以被独立地偏置，因此可以在非常低的偏置电压下操作。

35. 发明授权

US5761229A Integrated controlled intensity laser-based light source 失效
公开(公告)号：US5761229A
公开(公告)日：1998-06-02
申请号：US591849
申请日：1996-01-25
申请人： Richard R. Baldwin , Scott W. Corzine , John P. Ertel , William D. Holland , Leif Eric Larson , David M. Sears , Michael R. T. Tan , Shih-Yuan Wang , Albert Yuen , Tao Zhang
发明人： Richard R. Baldwin , Scott W. Corzine , John P. Ertel , William D. Holland , Leif Eric Larson , David M. Sears , Michael R. T. Tan , Shih-Yuan Wang , Albert Yuen , Tao Zhang
IPC分类号： H01S5/022 , H01S5/026 , H01S5/183 , H01S3/10
CPC分类号： H01S5/02288 , H01S5/02228 , H01S5/02284 , H01S5/02292 , H01S5/02296 , H01S5/0264 , H01S5/0683 , H01S5/183 , H01S5/423
摘要： An integrated laser-based light source that generates an output light beam having a controlled intensity. The light source comprises a package in which are mounted a laser, a light sensor and a coupler. The laser has one and only one light-emitting face from which a light beam is radiated as a radiated light beam. The light sensor generates an electrical signal representing the intensity of light energy falling it. The coupler couples a fraction of the radiated light beam to the light sensor, and provides the remainder of the radiated light beam as the output light beam. Since the light coupled to the light sensor by the coupler is a fraction of the radiated light beam, the electrical signal generated by the light sensor also represents the intensities of the radiated light beam and of the output light beam. A suitable control circuit, when fed with the electrical signal generated by the light sensor, can control the laser current to hold the electrical signal generated by the light sensor to a predetermined value that corresponds to the output light beam having a predetermined intensity.

36. 发明申请

US20110272669A1 PLASMONIC LIGHT EMITTING DIODE 有权
标题翻译：等离子体发光二极管
公开(公告)号：US20110272669A1
公开(公告)日：2011-11-10
申请号：US13145995
申请日：2009-01-30
申请人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
发明人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
IPC分类号： H01L33/04
CPC分类号： H01L33/06 , H01L33/0062 , H01L33/02 , H01L33/04 , H01L33/20 , H01L33/30 , H01L33/387 , H01L33/40 , H01L2933/0016
摘要： A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.
摘要翻译：发光二极管（100或150）包括在增强层（142）和量子阱（120）之间包含量子阱（120），增强层（142）和阻挡层（144或148）的二极管结构）。增强层（142）以耦合到量子阱（120）中的电子和空穴的组合产生的光子的频率来支持等离子体振荡。阻挡层用于阻止增强层（142）和二极管结构之间的扩散。

37. 发明授权

US07544945B2 Vertical cavity surface emitting laser (VCSEL) array laser scanner 有权
标题翻译：垂直腔表面发射激光（VCSEL）阵列激光扫描仪
公开(公告)号：US07544945B2
公开(公告)日：2009-06-09
申请号：US11347954
申请日：2006-02-06
申请人： Michael R. T. Tan , William R. Trutna, Jr. , Georgios Panotopoulos
发明人： Michael R. T. Tan , William R. Trutna, Jr. , Georgios Panotopoulos
IPC分类号： G01J5/02
CPC分类号： G01S17/936 , G01S7/4811 , G01S7/4815 , G01S17/10 , G01S17/42 , G01S17/87
摘要： Vehicle-based lidar systems and methods are disclosed using multiple lasers to provide more compact and cost-effective lidar functionality. Each laser in an array of lasers can be sequentially activated so that a corresponding optical element mounted with respect to the array of lasers produces respective interrogation beams in substantially different directions. Light from these beams is reflected by objects in a vehicle's environment, and detected so as to provide information about the objects to vehicle operators and/or passengers.
摘要翻译：公开了基于车辆的激光雷达系统和方法，其使用多个激光器来提供更紧凑且具有成本效益的激光雷达功能。激光器阵列中的每个激光器可以被顺序地激活，使得相对于激光器阵列安装的对应的光学元件在基本上不同的方向上产生相应的询问光束。来自这些梁的光被车辆的环境中的物体反射，并且被检测为向车辆操作者和/或乘客提供关于物体的信息。

38. 发明申请

US20080310852A1 Misalignment tolerant free space optical transceiver 有权
标题翻译：不对准自由空间光收发器
公开(公告)号：US20080310852A1
公开(公告)日：2008-12-18
申请号：US11820299
申请日：2007-06-18
申请人： Michael R. T. Tan , David A. Fattal , Terrel Morris
发明人： Michael R. T. Tan , David A. Fattal , Terrel Morris
IPC分类号： H04B10/00
CPC分类号： H04B10/803
摘要： In accordance with an aspect of the invention, a system has a transmitter and a receiver, where the transmitter includes a beam source and an optical element. The beam source produces a beam that represents information, and the optical element alters the beam so that the beam has a uniform intensity over a cross-sectional area. The receiver is separated from the transmitter by free space through which the beam propagates and includes an active area positioned to receive a portion of the beam that the receiver converts into a received signal. To accommodate possible misalignment, the cross-sectional area of the beam is larger than the active area by an amount that accommodates a range of misalignment of the receiver with the transmitter.
摘要翻译：根据本发明的一个方面，系统具有发射器和接收器，其中发射器包括光束源和光学元件。光束源产生表示信息的光束，并且光学元件改变光束，使得光束在横截面积上具有均匀的强度。接收机通过自由空间与发射机分离，射束通过该空间传播，并且包括被定位为接收接收机转换成接收信号的波束的一部分的有源区域。为了适应可能的未对准，波束的横截面面积大于有效区域，其量适应接收器与发射器的不对准范围。

39. 发明授权

US07443561B2 Deep quantum well electro-absorption modulator 失效
标题翻译：深量子阱电吸收调制器
公开(公告)号：US07443561B2
公开(公告)日：2008-10-28
申请号：US11148467
申请日：2005-06-08
申请人： David P. Bour , Ashish Tandon , Michael R. T. Tan
发明人： David P. Bour , Ashish Tandon , Michael R. T. Tan
IPC分类号： G02F1/03 , H01L29/06 , H01S5/00
CPC分类号： B82Y20/00 , G02F1/017 , G02F1/01725 , G02F2001/01766 , G02F2202/101 , G02F2202/102
摘要： Double well structures in electro-absorption modulators are created in quantum well active regions by embedding deep ultra thin quantum wells. The perturbation introduced by the embedded, deep ultra thin quantum well centered within a conventional quantum well lowers the confined energy state for the wavefunction in the surrounding larger well and typically results in the hole and electron distributions being more confined to the center of the conventional quantum well. The extinction ratio provided by the electro-absorption modulator is typically increased.
摘要翻译：电子吸收调制器中的双阱结构通过嵌入深超薄量子阱在量子阱活性区域中产生。以常规量子阱为中心的嵌入式，超超薄量子阱引入的扰动降低了周围较大阱中波函数的约束能态，并且通常导致空穴和电子分布更局限于常规量子的中心好。电吸收调制器提供的消光比通常增加。

40. 发明授权

US07276390B2 Long wavelength indium arsenide phosphide (InAsP) quantum well active region and method for producing same 失效
标题翻译：长波长磷化铟（InAsP）量子阱活性区及其制备方法
公开(公告)号：US07276390B2
公开(公告)日：2007-10-02
申请号：US10230895
申请日：2002-08-29
申请人： David P. Bour , Michael R. T. Tan , William H. Perez
发明人： David P. Bour , Michael R. T. Tan , William H. Perez
IPC分类号： H01L21/205
CPC分类号： B82Y20/00 , H01L21/02461 , H01L21/02463 , H01L21/02507 , H01L21/02543 , H01L21/02546 , H01L21/0262 , H01L33/0062 , H01S5/3434
摘要： An InAsP active region for a long wavelength light emitting device and a method for growing the same are disclosed. In one embodiment, the method comprises placing a substrate in an organometallic vapor phase epitaxy (OMVPE) reactor, the substrate for supporting growth of an indium arsenide phosphide (InAsP) film, forming a quantum well layer of InAsP, and forming a barrier layer adjacent the quantum well layer, where the quantum well layer and the barrier layer are formed at a temperature of less than 520 degrees C. Forming the quantum well layer and the barrier layer at a temperature of less than 520 degrees C. results in fewer dislocations by suppressing relaxation of the layers. A long wavelength active region including InAsP quantum well layers and InGaP barrier layers is also disclosed.
摘要翻译：公开了一种用于长波长发光器件的InAsP有源区及其生长方法。在一个实施方案中，该方法包括将衬底放置在有机金属气相外延（OMVPE）反应器中，该衬底用于支持砷化铟磷（InAsP）膜的生长，形成InAsP的量子阱层，并形成相邻的势垒层量子阱层，其中在低于520℃的温度下形成量子阱层和势垒层。在低于520℃的温度下形成量子阱层和阻挡层，导致较少的位错抑制层的松弛。还公开了包括InAsP量子阱层和InGaP阻挡层的长波长有源区。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式