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1. 发明授权

US07544945B2 Vertical cavity surface emitting laser (VCSEL) array laser scanner 有权
标题翻译：垂直腔表面发射激光（VCSEL）阵列激光扫描仪
公开(公告)号：US07544945B2
公开(公告)日：2009-06-09
申请号：US11347954
申请日：2006-02-06
申请人： Michael R. T. Tan , William R. Trutna, Jr. , Georgios Panotopoulos
发明人： Michael R. T. Tan , William R. Trutna, Jr. , Georgios Panotopoulos
IPC分类号： G01J5/02
CPC分类号： G01S17/936 , G01S7/4811 , G01S7/4815 , G01S17/10 , G01S17/42 , G01S17/87
摘要： Vehicle-based lidar systems and methods are disclosed using multiple lasers to provide more compact and cost-effective lidar functionality. Each laser in an array of lasers can be sequentially activated so that a corresponding optical element mounted with respect to the array of lasers produces respective interrogation beams in substantially different directions. Light from these beams is reflected by objects in a vehicle's environment, and detected so as to provide information about the objects to vehicle operators and/or passengers.
摘要翻译：公开了基于车辆的激光雷达系统和方法，其使用多个激光器来提供更紧凑且具有成本效益的激光雷达功能。激光器阵列中的每个激光器可以被顺序地激活，使得相对于激光器阵列安装的对应的光学元件在基本上不同的方向上产生相应的询问光束。来自这些梁的光被车辆的环境中的物体反射，并且被检测为向车辆操作者和/或乘客提供关于物体的信息。

2. 发明授权

US06765238B2 Material systems for semiconductor tunnel-junction structures 失效
标题翻译：半导体隧道结结构材料系统
公开(公告)号：US06765238B2
公开(公告)日：2004-07-20
申请号：US10243520
申请日：2002-09-12
申请人： Yin-Lan Chang , Ashish Tandon , Michael H. Leary , Michael R. T. Tan
发明人： Yin-Lan Chang , Ashish Tandon , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01L2988
CPC分类号： B82Y20/00 , H01S5/0421 , H01S5/18308 , H01S5/18313 , H01S5/3095 , H01S5/32366 , H01S5/34306 , Y10S257/918
摘要： The tunnel junction structure comprises a p-type tunnel junction layer of a first semiconductor material, an n-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. At least one of the semiconductor materials includes gallium (Ga), arsenic (As) and either nitrogen (N) or antimony (Sb). The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer.
摘要翻译：隧道结结构包括第一半导体材料的p型隧道结层，第二半导体材料的n型隧道结层和隧道结层之间的隧道结。至少一种半导体材料包括镓（Ga），砷（As）和氮（N）或锑（Sb）。通过形成隧道结结构的隧道结结构，隧道结的电压降明显增加，并且通过形成具有p型隧道结层的材料的价带能量与 n型隧道结层的导带能量。

3. 发明授权

US06553051B1 System for optically pumping a long wavelength laser using a short wavelength laser 有权
标题翻译：使用短波长激光器对长波长激光进行光学泵浦的系统
公开(公告)号：US06553051B1
公开(公告)日：2003-04-22
申请号：US09703389
申请日：2000-10-31
申请人： Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic , Albert T. Yuen
发明人： Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic , Albert T. Yuen
IPC分类号： H01S3091
CPC分类号： H01S5/02212 , H01L2224/48091 , H01S5/02284 , H01S5/041 , H01S5/18369 , H01S5/32366 , H01L2924/00014
摘要： An optical assembly includes an optical subassembly containing a prefabricated long wavelength laser optically coupled to a prefabricated short wavelength laser located in a housing. The optical subassembly may be removably installed in the housing in which the short wavelength laser is contained. The short wavelength laser optically pumps the long wavelength laser resulting in a long wavelength laser output. The optical subassembly allows the independent fabrication, optimization and testing of the short wavelength laser and the long wavelength laser.
摘要翻译：光学组件包括光学子组件，其包含光学耦合到位于壳体中的预制短波长激光器的预制长波长激光器。光学子组件可以可拆卸地安装在容纳短波长激光器的壳体中。短波长激光器对长波长激光器进行光泵浦，产生长波长激光输出。光学子组件允许短波长激光器和长波长激光器的独立制造，优化和测试。

4. 发明授权

US6069908A N-drive or P-drive VCSEL array 失效
标题翻译： N驱动或P驱动VCSEL阵列
公开(公告)号：US6069908A
公开(公告)日：2000-05-30
申请号：US20724
申请日：1998-02-09
申请人： Albert T. Yuen , Michael R. T. Tan , Chun Lei
发明人： Albert T. Yuen , Michael R. T. Tan , Chun Lei
IPC分类号： H01S5/00 , H01S5/02 , H01S5/042 , H01S5/183 , H01S5/187 , H01S5/42 , H01S3/19
CPC分类号： H01S5/183 , H01S5/423 , H01S5/0208 , H01S5/0422
摘要： A VCSEL that is adapted to the fabrication of an array of VCSELs. A VCSEL array according to the present invention includes first and second VCSELs for generating light of a predetermined wavelength. Each VCSEL includes a bottom reflector comprising an epitaxial layer of a semiconductor of a first conductivity type, a light generation region and a top reflector comprising a semiconductor of a second conductivity type. A bottom electrode is electrically connected to the bottom reflector, and a top electrode is electrically connected to the top reflector. The bottom electrode is grown on top of a buffer layer having an electrical conductivity less than a predetermined value and a crystalline structure that permits epitaxial growth of the bottom reflector on the buffer layer. The buffer layer may be grown on top of a substrate or be the substrate itself in the case in which a substrate having sufficiently low conductivity is utilized. The bottom reflector of each of the VCSELs is in contact with the top of the buffer layer. The first and second VCSELs are electrically isolated from one another by a trench extending into the buffer layer. The buffer layer is constructed from a material having resistivity that is sufficiently low to prevent cross-talk between the first and second VCSELs.
摘要翻译：适用于制造VCSEL阵列的VCSEL。根据本发明的VCSEL阵列包括用于产生预定波长的光的第一和第二VCSEL。每个VCSEL包括底部反射器，其包括第一导电类型的半导体的外延层，发光区域和包括第二导电类型的半导体的顶部反射器。底部电极电连接到底部反射器，并且顶部电极电连接到顶部反射器。底部电极生长在具有小于预定值的电导率的缓冲层的顶部上，并且允许底部反射器在缓冲层上外延生长的晶体结构。在使用具有足够低的导电性的基板的情况下，可以在衬底的顶部生长缓冲层或者作为衬底本身。每个VCSEL的底部反射器与缓冲层的顶部接触。第一和第二VCSEL通过延伸到缓冲层中的沟槽彼此电隔离。缓冲层由具有足够低的电阻率的材料构成，以防止第一和第二VCSEL之间的串扰。

5. 发明授权

US5892787A N-drive, p-common light-emitting devices fabricated on an n-type substrate and method of making same 失效
标题翻译：在n型衬底上制造的N驱动p普通发光器件及其制造方法
公开(公告)号：US5892787A
公开(公告)日：1999-04-06
申请号：US635838
申请日：1996-04-22
申请人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang , Ghulam Hasnain , Yu-Min Houng
发明人： Michael R. T. Tan , Albert T. Yuen , Shih-Yuan Wang , Ghulam Hasnain , Yu-Min Houng
IPC分类号： H01S5/00 , H01L33/00 , H01L33/30 , H01S5/042 , H01S5/183 , H01S5/30 , H01S5/42 , H01S3/19
CPC分类号： H01L33/30 , H01L33/0016 , H01L33/0062 , H01S5/18308 , H01S5/0207 , H01S5/0421 , H01S5/18305 , H01S5/2059 , H01S5/2063 , H01S5/3054 , H01S5/3095 , H01S5/423
摘要： A substantially n-type substrate structure having a p-type surface for use in semiconductor devices as a substitute for a p-type semiconductor substrate. The substrate structure comprises a substrate region and a buffer region. The substrate region is a region of n-type compound semiconductor, and includes a degeneratively n-doped portion adjacent its first surface. The buffer region is a region of compound semiconductor doped with a p-type dopant. The buffer region is located on the first surface of the substrate region and includes a surface remote from the substrate region that provides the p-type surface of the substrate structure. The buffer region also includes a degeneratively p-doped portion adjacent the degeneratively n-doped portion of the substrate region. The substrate structure includes a tunnel junction between the degeneratively n-doped portion of the substrate region and the degeneratively p-doped portion of the buffer region. The substrate structure is made by degeneratively doping a substrate region of n-type compound semiconductor material adjacent its first surface with an n-type impurity, and depositing a layer of compound semiconductor material doped with a p-type impurity on the first surface of the substrate region to form a buffer region that includes a surface remote from the substrate region. In the course of depositing the compound semiconductor material to form the buffer region, the compound semiconductor material is degeneratively doped with the p-type impurity at least in a portion adjacent the substrate region to form a tunnel junction between the substrate region and the buffer region.
摘要翻译：具有用于半导体器件的p型表面作为p型半导体衬底的替代物的基本为n型衬底结构。衬底结构包括衬底区域和缓冲区域。衬底区域是n型化合物半导体的区域，并且包括与其第一表面相邻的退化的n-掺杂部分。缓冲区是掺杂有p型掺杂剂的化合物半导体的区域。缓冲区域位于衬底区域的第一表面上并且包括远离衬底区域的表面，该表面提供衬底结构的p型表面。缓冲区还包括与衬底区域的退化的n掺杂部分相邻的退化的p掺杂部分。衬底结构包括在衬底区域的退化的n掺杂部分和缓冲区域的退化的p掺杂部分之间的隧道结。衬底结构是通过用n型杂质将邻近其第一表面的n型化合物半导体材料的衬底区域简单地掺杂制成的，并且在第一表面上沉积掺杂有p型杂质的化合物半导体材料层衬底区域以形成包括远离衬底区域的表面的缓冲区域。在沉积化合物半导体材料以形成缓冲区的过程中，化合物半导体材料至少在与衬底区域相邻的部分中被p型杂质退变掺杂以在衬底区域和缓冲区域之间形成隧道结。

6. 发明授权

US5266503A Method of making a surface emitting laser with oxygen ion implants followed by epitaxial regrowth 失效
标题翻译：用氧离子注入制造表面发射激光，然后进行外延再生的方法
公开(公告)号：US5266503A
公开(公告)日：1993-11-30
申请号：US771069
申请日：1991-10-02
申请人： Shih-Yuan Wang , Michael R. T. Tan
发明人： Shih-Yuan Wang , Michael R. T. Tan
IPC分类号： H01L21/76 , H01L33/00 , H01S5/183 , H01S5/20 , H01S5/223 , H01S5/24 , H01S5/343
CPC分类号： B82Y20/00 , H01L21/7605 , H01L33/0062 , H01S5/0207 , H01S5/18308 , H01S5/18305 , H01S5/2063 , H01S5/2234 , H01S5/24 , H01S5/3432 , Y10S148/095
摘要： A surface emitting laser diode device is disclosed where an active layer is implanted with oxygen ions except for a small active region. The active region includes a pn junction for generating radiation in response to passage of electrical current therethrough. After the oxygen implantation, mirror layers are grown on top of the active layer to reflect light generated in the active region back into the active region to induce more radiation emission. Mirror layers are also provided underneath the active region for the same purpose. Contact layers are provided on the top and bottom of the structure just described so that when an electrical potential is applied between the two contacts, electrical current will flow between the contacts between the active region for generating radiation. The oxygen-implanted isolation region surrounds the active region in order to confine current flow to the active region.
摘要翻译：公开了一种表面发射激光二极管器件，其中除了小的有源区域之外，用氧离子注入有源层。有源区包括用于响应电流通过其中的辐射而产生辐射的pn结。在氧注入之后，镜层生长在有源层的顶部上，以将在有源区中产生的光反射回有源区，以引起更多的辐射发射。为了相同的目的，镜面层也设置在活动区域的下方。接触层设置在刚刚描述的结构的顶部和底部，使得当在两个触点之间施加电势时，电流将在用于产生辐射的有源区域之间的触点之间流动。氧注入的隔离区围绕有源区域，以限制电流流向有源区。

7. 发明授权

US09263637B2 Plasmonic light emitting diode 有权
标题翻译：等离子体发光二极管
公开(公告)号：US09263637B2
公开(公告)日：2016-02-16
申请号：US13145995
申请日：2009-01-30
申请人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
发明人： Michael R. T. Tan , David A. Fattal , Marco Fiorentino , Shih-Yuan Wang
IPC分类号： H01L33/00 , H01L33/20 , H01L33/02 , H01L33/04 , H01L33/38
CPC分类号： H01L33/06 , H01L33/0062 , H01L33/02 , H01L33/04 , H01L33/20 , H01L33/30 , H01L33/387 , H01L33/40 , H01L2933/0016
摘要： A light emitting diode (100 or 150) includes a diode structure containing a quantum well (120), an enhancement layer (142), and a barrier layer (144 or 148) between the enhancement layer (142) and the quantum well (120). The enhancement layer (142) supports plasmon oscillations at a frequency that couples to photons produced by combination of electrons and holes in the quantum well (120). The barrier layer serves to block diffusion between the enhancement layer (142) and the diode structure.
摘要翻译：发光二极管（100或150）包括在增强层（142）和量子阱（120）之间包含量子阱（120），增强层（142）和阻挡层（144或148）的二极管结构）。增强层（142）以耦合到量子阱（120）中的电子和空穴的组合产生的光子的频率来支持等离子体振荡。阻挡层用于阻止增强层（142）和二极管结构之间的扩散。

8. 发明授权

US07372886B2 High thermal conductivity vertical cavity surface emitting laser (VCSEL) 有权
标题翻译：高导热性垂直腔表面发射激光器（VCSEL）
公开(公告)号：US07372886B2
公开(公告)日：2008-05-13
申请号：US10862753
申请日：2004-06-07
申请人： Yoon K. Song , Michael H. Leary , Michael R. T. Tan
发明人： Yoon K. Song , Michael H. Leary , Michael R. T. Tan
IPC分类号： H01S5/00 , H01S3/04 , H01S3/08
CPC分类号： H01S5/02461 , H01S5/0425 , H01S5/18308 , H01S5/18327
摘要： A light generating device such as a VCSEL includes a light generation layer, a top reflector, a bottom reflector, and a high thermal conductivity (HTC) layer between the light generation layer and the bottom reflector. The light generation layer is adapted to generate light having a first wavelength. Heat produced at the light generation layer is more efficiently dissipated due to the presence of the HTC layer. Alternatively, a light generating device such as a VCSEL includes a light generation layer, a top reflector, and a high thermal conductivity (HTC) bottom reflector. Heat produced at the light generation layer is more efficiently dissipated due to the fact that the bottom reflector is a HTC DBR reflector having lower thermal resistivity than a conventional DBR reflector.
摘要翻译：诸如VCSEL的发光装置在光产生层和底部反射器之间包括光产生层，顶部反射器，底部反射器和高热导率（HTC）层。光产生层适于产生具有第一波长的光。由于HTC层的存在，在光产生层产生的热更有效地消散。或者，诸如VCSEL的发光装置包括光产生层，顶反射器和高热导率（HTC）底反射器。由于底部反射器是具有比常规DBR反射器低的热电阻率的HTC DBR反射器的事实，在光产生层产生的热量更有效地消散。

9. 发明授权

US07358523B2 Method and structure for deep well structures for long wavelength active regions 失效
标题翻译：长波长活性区深井结构的方法和结构
公开(公告)号：US07358523B2
公开(公告)日：2008-04-15
申请号：US10970528
申请日：2004-10-20
申请人： Michael R. T. Tan , Ashish Tandon , David P. Bour
发明人： Michael R. T. Tan , Ashish Tandon , David P. Bour
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109
CPC分类号： H01S5/34 , B82Y20/00 , H01L33/06 , H01S5/183 , H01S5/3408 , H01S5/34313 , H01S5/34333
摘要： Subwells are added to quantum wells of light emitting semiconductor structures to shift their emission wavelengths to longer wavelengths. Typical applications of the invention are to InGaAs, InGaAsSb, InP and GaN material systems, for example.
摘要翻译：子阱被添加到发光半导体结构的量子阱中，以将其发射波长移动到更长的波长。本发明的典型应用是例如InGaAs，InGaAsSb，InP和GaN材料体系。

10. 发明授权

US06931044B2 Method and apparatus for improving temperature performance for GaAsSb/GaAs devices 有权
标题翻译：用于提高GaAsSb / GaAs器件温度性能的方法和装置
公开(公告)号：US06931044B2
公开(公告)日：2005-08-16
申请号：US10368274
申请日：2003-02-18
申请人： David P. Bour , Michael R. T. Tan , Ying-Lan Chang
发明人： David P. Bour , Michael R. T. Tan , Ying-Lan Chang
IPC分类号： H01S5/20 , H01L33/06 , H01S5/00 , H01S5/183 , H01S5/323 , H01S5/34 , H01S5/343
CPC分类号： H01S5/183 , B82Y20/00 , H01L33/06 , H01S5/3422 , H01S5/34306 , H01S5/34353
摘要： A method and apparatus is provided for improving the temperature performance of GaAsSb materials utilizing an AlGaInP confinement structure. An active region containing a GaAsSb quantum well layer and (In)GaAs barrier layers is sandwiched between two AlGaInP confinement layers. AlGaInP confinement structures provide sufficient electron confinement, thereby improving the stability of the threshold current with respect to increasing temperature for GaAsSb/GaAs heterostructures.
摘要翻译：提供了一种利用AlGaInP约束结构来改善GaAsSb材料的温度性能的方法和装置。包含GaAsSb量子阱层和（In）GaAs势垒层的有源区夹在两个AlGaInP限制层之间。 AlGaInP约束结构提供了足够的电子限制，从而提高了GaAsSb / GaAs异质结构相对于增加温度的阈值电流的稳定性。

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