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1. 发明授权

US06711195B2 Long-wavelength photonic device with GaAsSb quantum-well layer 有权
标题翻译：具有GaAsSb量子阱层的长波长光子器件
公开(公告)号：US06711195B2
公开(公告)日：2004-03-23
申请号：US10087422
申请日：2002-02-28
申请人： Ying-Lan Chang , Scott W. Corzine , Russell D. Dupuis , Min Soo Noh , Jae Hyun Ryou , Michael R. T. Tan , Ashish Tandon
发明人： Ying-Lan Chang , Scott W. Corzine , Russell D. Dupuis , Min Soo Noh , Jae Hyun Ryou , Michael R. T. Tan , Ashish Tandon
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/3422 , H01S5/343 , H01S5/34306
摘要： The long-wavelength photonic device comprises an active region that includes at least one quantum-well layer of a quantum-well layer material that comprises InyGa1-yAsSb in which y≧0, and that additionally includes a corresponding number of barrier layers each of a barrier layer material that includes gallium and phosphorus. The barrier layer material has a conduction-band energy level greater than the conduction-band energy level of the quantum-well layer material and has a valence-band energy level less than the valence-band energy level of the quantum-well layer material.
摘要翻译：长波长光子器件包括有源区，该有源区包括至少一个量子阱层材料的量子阱层，该量子阱层材料包括其中y> = 0的In y Ga 1-y As Sb，并且另外包括相应数量的势垒层包括镓和磷的阻挡层材料。阻挡层材料的导带能级大于量子阱层材料的导带能级，并且具有小于量子阱层材料的价带能级的价带能级。

2. 发明授权

US07033938B2 Method of making a long wavelength indium gallium arsenide nitride (InGaAsN) active region 失效
标题翻译：制造长波长砷化铟镓（InGaAsN）活性区域的方法
公开(公告)号：US07033938B2
公开(公告)日：2006-04-25
申请号：US10785747
申请日：2004-02-23
申请人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
发明人： David P. Bour , Tetsuya Takeuchi , Ashish Tandon , Ying-Lan Chang , Michael R. T. Tan , Scott W. Corzine
IPC分类号： H01L21/44
CPC分类号： C30B25/02 , C30B29/403 , H01L21/02395 , H01L21/02463 , H01L21/02507 , H01L21/0254 , H01L21/02546 , H01L21/0262 , H01L33/007 , H01L33/105 , H01S5/32366 , Y10S438/936 , Y10S438/938 , Y10S438/956
摘要： The active region of a long-wavelength light emitting device is made by providing an organometallic vapor phase epitaxy (OMVPE) reactor, placing a substrate wafer capable of supporting growth of indium gallium arsenide nitride in the reactor, supplying a Group III–V precursor mixture comprising an arsenic precursor, a nitrogen precursor, a gallium precursor, an indium precursor and a carrier gas to the reactor and pressurizing the reactor to a sub-atmospheric elevated growth pressure no higher than that at which a layer of indium gallium arsenide layer having a nitrogen fraction commensurate with light emission at a wavelength longer than 1.2 μm is deposited over the substrate wafer.
摘要翻译：通过提供有机金属气相外延（OMVPE）反应器，将能够支持砷化镓镓氮化物的生长的衬底晶片放置在反应器中，提供III-V族前体混合物，制造长波长发光器件的有源区包括砷前体，氮前体，镓前体，铟前体和载气，并将反应器加压至不高于砷化镓砷化物层的亚大气压升高的生长压力在基片晶片上沉积与长于1.2μm波长的发光相当的氮气分数。

3. 发明授权

US06730944B1 InP based high temperature lasers with InAsP quantum well layers and barrier layers of Gax(ALIn)1-xP 失效
标题翻译：基于InP的高温激光器，具有InAsP量子阱层和Gax（ALIn）1-xP的阻挡层
公开(公告)号：US06730944B1
公开(公告)日：2004-05-04
申请号：US10354276
申请日：2003-01-30
申请人： Ashish Tandon , Ying-Ian Chang , Scott W. Corzine , David P. Bour , Michael R. T. Tan
发明人： Ashish Tandon , Ying-Ian Chang , Scott W. Corzine , David P. Bour , Michael R. T. Tan
IPC分类号： H01L2906
CPC分类号： B82Y20/00 , H01S5/3406 , H01S5/3407 , H01S5/34306 , H01S5/3434 , H01S5/3436 , H01S2302/00
摘要： The invention provides a laser structure that operates at a wavelength of 1.3 &mgr;m and at elevated temperatures and a method of making same. The laser structure includes a quantum well layer of InAsP. The quantum well layer is sandwiched between a first barrier layer and a second barrier layer. Each barrier layer exhibits a higher bandgap energy than the quantum well layer. Also, each barrier layer comprises Gax(AlIn)1−xP in which x 0. This material has a higher bandgap energy than conventional barrier layer materials, such as InGaP. The resulting larger conduction band discontinuity leads to improved high temperature performance without increasing the threshold current of the laser structure.
摘要翻译：本发明提供了在1.3μm波长和高温下工作的激光结构及其制造方法。激光器结构包括InAsP的量子阱层。量子阱层夹在第一阻挡层和第二阻挡层之间。每个阻挡层表现出比量子阱层更高的带隙能量。此外，每个阻挡层包括其中x 0的Gax（AlIn）1-xP。该材料具有比诸如InGaP的常规阻挡层材料更高的带隙能量。所产生的更大的导带不连续性导致改善的高温性能而不增加激光器结构的阈值电流。

4. 发明授权

US06553051B1 System for optically pumping a long wavelength laser using a short wavelength laser 有权
标题翻译：使用短波长激光器对长波长激光进行光学泵浦的系统
公开(公告)号：US06553051B1
公开(公告)日：2003-04-22
申请号：US09703389
申请日：2000-10-31
申请人： Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic , Albert T. Yuen
发明人： Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic , Albert T. Yuen
IPC分类号： H01S3091
CPC分类号： H01S5/02212 , H01L2224/48091 , H01S5/02284 , H01S5/041 , H01S5/18369 , H01S5/32366 , H01L2924/00014
摘要： An optical assembly includes an optical subassembly containing a prefabricated long wavelength laser optically coupled to a prefabricated short wavelength laser located in a housing. The optical subassembly may be removably installed in the housing in which the short wavelength laser is contained. The short wavelength laser optically pumps the long wavelength laser resulting in a long wavelength laser output. The optical subassembly allows the independent fabrication, optimization and testing of the short wavelength laser and the long wavelength laser.
摘要翻译：光学组件包括光学子组件，其包含光学耦合到位于壳体中的预制短波长激光器的预制长波长激光器。光学子组件可以可拆卸地安装在容纳短波长激光器的壳体中。短波长激光器对长波长激光器进行光泵浦，产生长波长激光输出。光学子组件允许短波长激光器和长波长激光器的独立制造，优化和测试。

5. 发明申请

US20090129426A1 Semiconductor System Having a Ring Laser Fabricated by Epitaxial Layer Overgrowth 失效
标题翻译：具有由外延层过度生长制成的环形激光器的半导体系统
公开(公告)号：US20090129426A1
公开(公告)日：2009-05-21
申请号：US12359326
申请日：2009-01-25
申请人： Michael R. T. Tan , Scott W. Corzine , David P. Bour
发明人： Michael R. T. Tan , Scott W. Corzine , David P. Bour
IPC分类号： H01S3/083
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译：本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

6. 发明授权

US06252896B1 Long-Wavelength VCSEL using buried bragg reflectors 有权
标题翻译：长波长VCSEL使用埋地布拉格反射器
公开(公告)号：US06252896B1
公开(公告)日：2001-06-26
申请号：US09263696
申请日：1999-03-05
申请人： Michael R. T. Tan , Dubravko I. Babic , Scott W. Corzine , Tirmula R. Ranganath , Shih-Yuan Wang , Wayne Bi
发明人： Michael R. T. Tan , Dubravko I. Babic , Scott W. Corzine , Tirmula R. Ranganath , Shih-Yuan Wang , Wayne Bi
IPC分类号： H01S500
CPC分类号： H01S5/426 , H01S5/0215 , H01S5/0216 , H01S5/041 , H01S5/18311 , H01S5/18369
摘要： An optically pumped vertical-cavity surface-emitting laser (VCSEL) device and a method of fabricating the device utilize two separate substrates that perform a filtering operation to selectively transmit only light having a long peak wavelength that is generated by the device. The optically pumped VCSEL device is a self-pumped device that can generate the pump light to drive the device to emit output laser light having a long peak wavelength. The optically pumped VCSEL device includes a short-wavelength VCSEL formed on one of the two substrates and a long-wavelength VCSEL formed on the other substrate. The short-wavelength VCSEL is a current-driven VCSEL that generates short-wavelength light to drive (i.e., optically pump) the long-wavelength VCSEL. The short-wavelength VCSEL and the long-wavelength VCSEL are bonded together such that the two substrates are separated by the two VCSELs. A transparent optical adhesive material or a metallic bonding material may be utilized to bond the short-wavelength VCSEL onto the long-wavelength VCSEL. The substrates are wavelength-selective with respect to propagating light, so that short-wavelength light generated by the short-wavelength VCSEL and not absorbed by the long-wavelength VCSEL is mostly absorbed by the two separate substrates. However, the long-wavelength light generated by the long-wavelength VCSEL is allowed to be transmitted through the substrates as output laser light.
摘要翻译：光泵浦垂直腔表面发射激光器（VCSEL）器件和制造该器件的方法利用执行滤波操作的两个分离的衬底，以仅选择性地仅透射由器件产生的具有长峰值波长的光。光泵浦VCSEL器件是自泵浦器件，其可以产生泵浦光以驱动器件发射具有长峰值波长的输出激光。光泵浦VCSEL器件包括形成在两个衬底中的一个上的短波长VCSEL和在另一衬底上形成的长波长VCSEL。短波长VCSEL是产生短波长光以驱动（即光泵浦）长波长VCSEL的电流驱动VCSEL。短波长VCSEL和长波长VCSEL被结合在一起，使得两个基板被两个VCSEL隔开。可以使用透明光学粘合剂材料或金属粘合材料将短波长VCSEL粘合到长波长VCSEL上。衬底相对于传播光是波长选择性的，使得由短波长VCSEL产生并且不被长波长VCSEL吸收的短波长光主要被两个分离的衬底吸收。然而，由长波长VCSEL产生的长波长光被允许通过基板作为输出激光传输。

7. 发明授权

US07502405B2 Semiconductor system having a ring laser fabricated by expitaxial layer overgrowth 失效
标题翻译：具有通过外延层过度生长制造的环形激光器的半导体系统
公开(公告)号：US07502405B2
公开(公告)日：2009-03-10
申请号：US11209994
申请日：2005-08-22
申请人： Michael R. T. Tan , Scott W. Corzine , David P. Bour
发明人： Michael R. T. Tan , Scott W. Corzine , David P. Bour
IPC分类号： H01S3/083 , H01S5/00 , H01L21/00
CPC分类号： B82Y20/00 , H01S5/0424 , H01S5/1071 , H01S5/12 , H01S5/2077 , H01S5/2272 , H01S5/34 , H01S5/3428 , H01S5/34333 , H01S2304/12
摘要： The present invention provides a ring laser system comprising forming an optical core by an epitaxial layer overgrowth over an intermediate layer, forming multi-quantum wells adjacent to the optical core and forming an outer structure further comprising a total internal reflector, wherein forming photons within the multi-quantum wells further comprises circulating the photons within the ring laser structure comprising the outer structure, the multi-quantum wells, and the optical core.
摘要翻译：本发明提供了一种环形激光系统，其包括通过外延层在中间层上过度生长形成光学核心，形成与光学核心相邻的多量子阱并形成进一步包括全部内部反射器的外部结构，其中在内部形成光子多量子阱还包括在包括外部结构，多量子阱和光学核心的环形激光器结构内循环光子。

8. 发明授权

US06483862B1 System and method for the monolithic integration of a light emitting device and a photodetector using a native oxide semiconductor layer 失效
标题翻译：用于使用天然氧化物半导体层的发光器件和光电检测器的单片集成的系统和方法
公开(公告)号：US06483862B1
公开(公告)日：2002-11-19
申请号：US09209528
申请日：1998-12-11
申请人： Lewis B. Aronson , Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic
发明人： Lewis B. Aronson , Michael R. T. Tan , Scott W. Corzine , Dubravko I. Babic
IPC分类号： H01S500
CPC分类号： H01S5/0264 , H01L27/15 , H01S5/0425 , H01S5/183 , H01S5/2027
摘要： A light emitting device and photodetector combination having a structure in which the layer of the photodetector that contacts the light emitting device is separated from the light emitting device by a native semiconductor oxide layer that is both insulating and has a refractive index lower than that of the light emitting device and the photodetector. This configuration results in a light emitting device and photodetector structure that minimizes the capture of the spontaneous emission light output from the light emitting device by the photodetector while electrically isolating the light emitting device from the photodetector. The electrical isolation of the light emitting device from the photodetector results in a four terminal device in which the light emitting device and photodetector may be independently biased, and can therefore be operated at a very low bias voltage.
摘要翻译：一种发光器件和光电检测器组合，具有这样一种结构，其中接触发光器件的光电检测器层通过天然半导体氧化物层与发光器件分离，该天然半导体氧化物层是绝缘的并且折射率低于发光器件和光电检测器。这种配置导致发光器件和光电检测器结构，其使由光电检测器从发光器件输出的自发发射光的捕获最小化，同时将发光器件与光电检测器电隔离。发光器件与光检测器的电隔离导致四端器件，其中发光器件和光电检测器可以被独立地偏置，因此可以在非常低的偏置电压下操作。

9. 发明授权

US5761229A Integrated controlled intensity laser-based light source 失效
公开(公告)号：US5761229A
公开(公告)日：1998-06-02
申请号：US591849
申请日：1996-01-25
申请人： Richard R. Baldwin , Scott W. Corzine , John P. Ertel , William D. Holland , Leif Eric Larson , David M. Sears , Michael R. T. Tan , Shih-Yuan Wang , Albert Yuen , Tao Zhang
发明人： Richard R. Baldwin , Scott W. Corzine , John P. Ertel , William D. Holland , Leif Eric Larson , David M. Sears , Michael R. T. Tan , Shih-Yuan Wang , Albert Yuen , Tao Zhang
IPC分类号： H01S5/022 , H01S5/026 , H01S5/183 , H01S3/10
CPC分类号： H01S5/02288 , H01S5/02228 , H01S5/02284 , H01S5/02292 , H01S5/02296 , H01S5/0264 , H01S5/0683 , H01S5/183 , H01S5/423
摘要： An integrated laser-based light source that generates an output light beam having a controlled intensity. The light source comprises a package in which are mounted a laser, a light sensor and a coupler. The laser has one and only one light-emitting face from which a light beam is radiated as a radiated light beam. The light sensor generates an electrical signal representing the intensity of light energy falling it. The coupler couples a fraction of the radiated light beam to the light sensor, and provides the remainder of the radiated light beam as the output light beam. Since the light coupled to the light sensor by the coupler is a fraction of the radiated light beam, the electrical signal generated by the light sensor also represents the intensities of the radiated light beam and of the output light beam. A suitable control circuit, when fed with the electrical signal generated by the light sensor, can control the laser current to hold the electrical signal generated by the light sensor to a predetermined value that corresponds to the output light beam having a predetermined intensity.

10. 发明授权

US07072531B2 Gain-assisted electroabsorption modulators 有权
标题翻译：增益辅助电吸收调节剂
公开(公告)号：US07072531B2
公开(公告)日：2006-07-04
申请号：US10944372
申请日：2004-09-16
申请人： Kostadin D. Djordjev , Michael R. T. Tan , Chao-Kun Lin , Scott W. Corzine
发明人： Kostadin D. Djordjev , Michael R. T. Tan , Chao-Kun Lin , Scott W. Corzine
IPC分类号： G02F1/17 , G02F1/035
CPC分类号： G02B6/12007 , G02B2006/12078 , G02B2006/12126 , G02B2006/12142
摘要： A light modulator having a waveguide and a resonator is disclosed. The waveguide routes light of wavelength λ past the resonator. The resonator is coupled to the waveguide such that a portion of the light is input to the resonator, the resonator having a resonance at λ. The resonator includes a gain region in which light of wavelength λ is amplified and an absorption region in which light of wavelength λ is absorbed, the absorption region having first and second states, the first state absorbing less light of wavelength λ than the second state, the state of the absorption region is determined by an electrical signal coupled to the absorption region. The gain region provides a gain that compensates for the light absorption in the first state. In one embodiment, the waveguide and resonator are critically coupled when the absorption region is in the second state.
摘要翻译：公开了一种具有波导和谐振器的光调制器。波导将波长λ的光通过谐振器。谐振器耦合到波导，使得一部分光被输入到谐振器，谐振器具有λ的共振。谐振器包括其中放大波长λ的光的增益区域和吸收波长λ的光的吸收区域，具有第一和第二状态的吸收区域，吸收比第二状态更少的波长λ的光的第一状态，吸收区域的状态由耦合到吸收区域的电信号决定。增益区域提供补偿第一状态下的光吸收的增益。在一个实施例中，当吸收区域处于第二状态时，波导和谐振器被严格耦合。

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