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31. 发明授权

US08283200B2 Manufacturing method of thin film transistor and thin film transistor, and display 失效
标题翻译：制造薄膜晶体管和薄膜晶体管的方法，并进行显示
公开(公告)号：US08283200B2
公开(公告)日：2012-10-09
申请号：US11746738
申请日：2007-05-10
申请人： Noriyuki Kawashima , Kazumasa Nomoto , Akihiro Nomoto
发明人： Noriyuki Kawashima , Kazumasa Nomoto , Akihiro Nomoto
IPC分类号： H01L29/08
CPC分类号： H01L51/055 , H01L51/0022 , H01L51/0541
摘要： A manufacturing method of a thin film transistor made of a stack of an organic semiconductor layer, a gate insulating film and a gate electrode in this order on a substrate, which includes the steps of pattern coating a gate electrode material on the gate insulating film by printing; and carrying out a heat treatment to form the gate electrode resulting from drying for solidification of the pattern coated gate electrode material.
摘要翻译：在衬底上依次形成由有机半导体层，栅极绝缘膜和栅极电极构成的薄膜晶体管的制造方法，其包括以下步骤：通过在栅极绝缘膜上图案涂覆栅电极材料的步骤打印; 进行热处理，形成由干燥形成的图案涂布的栅电极材料固化而形成的栅电极。

32. 发明授权

US07718465B2 Semiconductor device and process for producing same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07718465B2
公开(公告)日：2010-05-18
申请号：US11458573
申请日：2006-07-19
申请人： Kazumasa Nomoto
发明人： Kazumasa Nomoto
IPC分类号： H01L51/40
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L51/0004 , H01L51/0005 , H01L51/0022 , H01L51/0541 , H01L51/0545 , H01L2251/105
摘要： A semiconductor device and process for producing same are provided. The process for producing a semiconductor device includes a first embossing step of pressing a stamp having a relief pattern onto a surface of a substrate to form a depression pattern on the surface of the substrate; a second step of feeding an application material composed of a semiconductor material or a conductive material into the depression pattern by printing; and a third step of curing the application material fed by printing.
摘要翻译：提供半导体器件及其制造方法。制造半导体器件的方法包括：第一压花步骤，将具有浮雕图案的印模压印到基板的表面上，以在基板的表面上形成凹陷图案; 第二步，通过印刷将由半导体材料或导电材料构成的涂布材料进料到凹陷图案中; 以及固化通过印刷进料的涂布材料的第三步骤。

33. 发明申请

US20100032660A1 ORGANIC THIN FILM TRANSISTOR, PRODUCTION METHOD THEREOF, AND ELECTRONIC DEVICE 有权
标题翻译：有机薄膜晶体管，其制造方法和电子器件
公开(公告)号：US20100032660A1
公开(公告)日：2010-02-11
申请号：US12510408
申请日：2009-07-28
申请人： Kazumasa Nomoto , Nobuhide Yoneya , Takahiro Ohe
发明人： Kazumasa Nomoto , Nobuhide Yoneya , Takahiro Ohe
IPC分类号： H01L51/10 , H01L51/40
CPC分类号： H01L51/0021 , H01L51/052 , H01L51/0541 , H01L51/0545 , H01L51/105
摘要： An organic thin film transistor is disclosed, including a substrate formed of an organic insulating layer, a first layer deposited on the substrate using a plating technique to be used for forming a source electrode and a drain electrode, a second layer of a metal material deposited covering the first layer using a further plating technique to be used for forming the source electrode and the drain electrode with the metal material capable of forming an ohmic contact with an organic semiconductor material lower than the first layer, and an organic semiconductor layer over a region between the source electrode and the drain electrode, which are each formed with the first layer and the second layer. Also disclosed is an electric device provided with the organic thin film transistor.
摘要翻译：公开了一种有机薄膜晶体管，其包括由有机绝缘层形成的基板，使用用于形成源电极和漏电极的镀覆技术沉积在基板上的第一层，沉积的金属材料的第二层使用另外的镀覆技术覆盖第一层，以用于形成源电极和漏电极，其中金属材料能够与低于第一层的有机半导体材料形成欧姆接触，并且在区域上形成有机半导体层在源电极和漏电极之间，每个都形成有第一层和第二层。还公开了设置有有机薄膜晶体管的电气装置。

34. 发明申请

US20080251844A1 METHOD FOR FORMING PATTERN, METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE 有权
标题翻译：形成图案的方法，制造半导体器件和半导体器件的方法
公开(公告)号：US20080251844A1
公开(公告)日：2008-10-16
申请号：US12101532
申请日：2008-04-11
申请人： Akihiro Nomoto , Kazumasa Nomoto , Toshio Fukuda
发明人： Akihiro Nomoto , Kazumasa Nomoto , Toshio Fukuda
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L51/0022 , B82Y10/00 , B82Y40/00 , G03F7/0002 , H01L51/0545 , H01L51/102 , H05K3/046 , H05K3/207 , H05K2203/0108 , H05K2203/0528 , H05K2203/122
摘要： A method for forming a pattern includes the step of forming an electrically conductive film by applying a liquid composition onto a first plate. The liquid composition includes an organic solvent and conductive particles surface-modified with a fatty acid or an aliphatic amine. Then, a second pattern, which is a reverse pattern of a first pattern, is formed on the first plate by pressing a second plate having a concave-convex pattern on a surface thereof on a surface of the first plate having the electrically conductive film on the surface thereof. Then, the first pattern of the electrically conductive film is transferred onto convex top faces of the second plate. Then, the second pattern is transferred onto a surface of a transfer substrate by pressing the surface of the first plate having the second pattern thereon on the surface of the transfer substrate.
摘要翻译：形成图案的方法包括通过将液体组合物施加到第一板上而形成导电膜的步骤。液体组合物包括有机溶剂和用脂肪酸或脂肪族胺表面改性的导电颗粒。然后，通过在具有导电膜的第一板的表面上的表面上压制具有凹凸图案的第二板，在第一板上形成作为第一图案的相反图案的第二图案其表面。然后，将导电膜的第一图案转印到第二板的凸顶面上。然后，通过在转印基板的表面上按压具有第二图案的第一板的表面，将第二图案转印到转印基板的表面上。

35. 发明授权

US06963107B2 Nonvolatile semiconductor memory apparatus and the operation method 有权
公开(公告)号：US06963107B2
公开(公告)日：2005-11-08
申请号：US10744797
申请日：2003-12-23
申请人： Hideto Tomiie , Shinji Satoh , Kazumasa Nomoto
发明人： Hideto Tomiie , Shinji Satoh , Kazumasa Nomoto
IPC分类号： G11C16/02 , G11C8/02 , G11C16/04 , H01L21/28 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/66833 , G11C16/0475 , H01L21/28282 , H01L29/7923
摘要： A nonvolatile semiconductor memory apparatus capable of attaining a low voltage when writing data, wherein charge injection into an unnecessary portion is not performed when reading, and capable of unifying a threshold voltage level when erasing, comprising a first conductive type semiconductor region, two source/drain regions made by a second conductive type semiconductor, a plurality of dielectric films stacked on a first conductive type semiconductor region between the two source/drain regions, and a gate electrode; wherein the first conductive type semiconductor region between the two source/drain regions includes a first region wherein a channel is formed by an inversion layer of a minority carrier and a second region formed between the first region and a source/drain region on one side of the first region and having higher concentration than that of the first region.

36. 发明申请

US20050189570A1 Semiconductor device and method of producing the same 失效
公开(公告)号：US20050189570A1
公开(公告)日：2005-09-01
申请号：US11098503
申请日：2005-04-05
申请人： Kazumasa Nomoto , Toshio Kobayashi , Akihiro Nakamura , Ichiro Fujiwara , Toshio Terano
发明人： Kazumasa Nomoto , Toshio Kobayashi , Akihiro Nakamura , Ichiro Fujiwara , Toshio Terano
IPC分类号： H01L21/28 , H01L21/8246 , H01L27/115 , H01L21/8242 , H01L23/02 , H01L27/10 , H01L29/73 , H01L29/74
CPC分类号： H01L27/11568 , H01L21/2815 , H01L27/115 , H01L29/6656
摘要： A semiconductor device enabling word lines to be arranged at close intervals, comprising a plurality of memory transistors arranged in an array and a plurality of word lines serving also as gate electrodes of memory transistors in a same row, extending in a row direction, and repeating in a column direction, where insulating films are formed between the plurality of word lines to insulate and isolate the word lines from each other and where a dimension of separation of word lines is defined by the thickness of the insulating films.

37. 发明授权

US06906390B2 Nonvolatile semiconductor storage and method for manufacturing the same 失效
标题翻译：非易失性半导体存储器及其制造方法
公开(公告)号：US06906390B2
公开(公告)日：2005-06-14
申请号：US10169022
申请日：2001-10-25
申请人： Kazumasa Nomoto , Hiroshi Aozasa , Ichiro Fujiwara , Shinji Tanaka
发明人： Kazumasa Nomoto , Hiroshi Aozasa , Ichiro Fujiwara , Shinji Tanaka
IPC分类号： H01L21/8247 , H01L21/28 , H01L21/318 , H01L21/762 , H01L27/115 , H01L27/12 , H01L29/788 , H01L29/792 , H01L29/72
CPC分类号： H01L29/792 , H01L21/28282 , H01L21/7624
摘要： The memory device has a plurality of dielectric films including charge storage layers CS having a charge holding capability therein and stacked on an active region of a semiconductor SUB and electrodes G on the plurality of dielectric films. Each charge storage layer CS includes a first nitride film CS1 made of silicon nitride or silicon oxynitride and a second nitride film CS2 made of silicon nitride or silicon oxynitride and having a higher charge trap density than the first nitride film CS1. The first nitride film CS1 is formed by chemical vapor deposition using a first gas which contains a first silicon-containing gas containing chlorine with a predetermined percent composition and a nitrogen-containing gas as starting materials. The second nitride film CS2 is formed by chemical vapor deposition using a second gas which contains a second silicon-containing gas having a lower chlorine percent composition than the above predetermined percent composition and a nitrogen-containing gas as starting materials.
摘要翻译：存储器件具有多个电介质膜，其包括其中具有电荷保持能力的电荷存储层CS，并且堆叠在半导体SUB的有源区和多个介电膜上的电极G. 每个电荷存储层CS包括由氮化硅或氮氧化硅制成的第一氮化物膜CS 1和由氮化硅或氮氧化硅制成的具有比第一氮化物膜CS 1更高的电荷陷阱密度的第二氮化物膜CS 2。使用包含含有预定百分比组成的含氯的第一含硅气体和含氮气体作为原料的第一气体通过化学气相沉积形成氮化物膜CS1。第二氮化物膜CS2通过使用包含比上述预定百分比组成低的氯百分含量的第二含硅气体和含氮气体作为起始材料的第二气体进行化学气相沉积而形成。

38. 发明申请

US20050036391A1 Nonvolatile semiconductor memory apparatus and the operation method 有权
标题翻译：非易失性半导体存储装置及其操作方法
公开(公告)号：US20050036391A1
公开(公告)日：2005-02-17
申请号：US10744797
申请日：2003-12-23
申请人： Hideto Tomiie , Shinji Satoh , Kazumasa Nomoto
发明人： Hideto Tomiie , Shinji Satoh , Kazumasa Nomoto
IPC分类号： G11C16/02 , G11C8/02 , G11C16/04 , H01L21/28 , H01L21/336 , H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/66833 , G11C16/0475 , H01L21/28282 , H01L29/7923
摘要： A nonvolatile semiconductor memory apparatus capable of attaining a low voltage when writing data, wherein charge injection into an unnecessary portion is not performed when reading, and capable of unifying a threshold voltage level when erasing, comprising a first conductive type semiconductor region, two source/drain regions made by a second conductive type semiconductor, a plurality of dielectric films stacked on a first conductive type semiconductor region between the two source/drain regions, and a gate electrode; wherein the first conductive type semiconductor region between the two source/drain regions includes a first region wherein a channel is formed by an inversion layer of a minority carrier and a second region formed between the first region and a source/drain region on one side of the first region and having higher concentration than that of the first region.
摘要翻译：一种非易失性半导体存储装置，其能够在写入数据时能够获得低电压，其中当读取时不执行对不需要的部分的电荷注入，并且能够在包括第一导电型半导体区域的两个源/ 由第二导电型半导体制成的漏极区域，堆叠在两个源极/漏极区域之间的第一导电类型半导体区域上的多个电介质膜和栅电极; 其中所述两个源极/漏极区域之间的所述第一导电类型半导体区域包括第一区域，其中沟道由少数载流子的反型层和形成在所述第一区域和所述第一区域与所述第一区域之间的源/ 第一区域并且具有比第一区域更高的浓度。

39. 发明授权

US06525379B2 Memory device, method of manufacturing the same, and integrated circuit 失效
公开(公告)号：US06525379B2
公开(公告)日：2003-02-25
申请号：US09919571
申请日：2001-07-31
申请人： Kazumasa Nomoto , Noriyuki Kawashima , Ichiro Fujiwara , Kenichi Taira
发明人： Kazumasa Nomoto , Noriyuki Kawashima , Ichiro Fujiwara , Kenichi Taira
IPC分类号： H01L2100
CPC分类号： H01L29/78645 , H01L21/28273 , H01L27/115 , H01L27/11521 , H01L27/12 , H01L29/66825 , H01L29/78648 , H01L29/7881
摘要： Provided are a memory device capable of accurately reading out data, a method of manufacturing the same, and an integrated circuit. A first control electrode substantially faces a second control electrode with a conduction region and a storage region in between. At the time of “the reading of data”, an electric potential is applied to the first control electrode. During “the reading of data”, a change in an electric potential between the conduction region and the storage region is prevented, and therefore, unintentional writing or erasing of information is prevented, so that written information can be accurately read out.

40. 发明授权

US5440148A Quantum operational device 失效
标题翻译：量子操作装置
公开(公告)号：US5440148A
公开(公告)日：1995-08-08
申请号：US229303
申请日：1994-04-18
申请人： Kazumasa Nomoto
发明人： Kazumasa Nomoto
IPC分类号： H01L21/20 , G02F1/017 , G02F3/00 , G06N99/00 , G11C7/00 , H01L21/331 , H01L29/06 , H01L29/12 , H01L29/15 , H01L29/66 , H01L29/73 , H01L29/737 , H01L29/762 , H01L29/80 , H01L29/88 , H03K19/08 , H01L29/205
CPC分类号： G06N99/002 , B82Y10/00 , B82Y20/00 , G02F1/01716 , G02F3/00 , G11C7/005 , H01L29/127 , H01L29/762 , H01L29/88 , H03K19/08
摘要： A quantum operational device includes a plurality of quantum boxes arranged in a plurality of stages isolated by a distance which permits tunnelling of electrons or holes through the distance, uses as bit information the presence or absence of an electron or a hole in each of the quantum boxes, and prohibits tunnelling of an electron or a hole from a quantum box in a stage to another quantum box in an adjacent stage when an electron or a hole exists in the quantum box in the adjacent stage. The device only needs quite low power, performs operation at a high speed, and can be fabricated by a simple manufacturing process.
摘要翻译：量子操作装置包括多个量子箱，其被布置成隔离一定距离的多个级，允许电子或空穴穿过该距离，用作位信息，每个量子中存在或不存在电子或空穴并且当在邻近阶段的量子盒中存在电子或空穴时，在相邻阶段中禁止电子或空穴从阶段中的量子箱隧穿到另一个量子盒。该装置仅需要相当低的功率，高速运行，并且可以通过简单的制造工艺制造。

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