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31. 发明申请

US20070269744A1 Resist Composition for Electron Beam or Euv (Extreme Ultraviolet) and Method for Forming Resist Pattern 有权
标题翻译：电子束或Euv（极紫外）的抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070269744A1
公开(公告)日：2007-11-22
申请号：US11573884
申请日：2005-09-01
申请人： Hideo Hada , Daiju Shiono , Hiroo Kinoshita , Takeo Watanabe
发明人： Hideo Hada , Daiju Shiono , Hiroo Kinoshita , Takeo Watanabe
IPC分类号： G03C1/00
CPC分类号： G03F7/0045 , G03F7/0397 , Y10S430/106 , Y10S430/111 , Y10S430/12 , Y10S430/121 , Y10S430/122 , Y10S430/126 , Y10S430/143
摘要： A resist composition for electron beam or extreme ultraviolet (EUV), comprising a resin component (A) which exhibits changed alkali solubility under action of acid, and a photoacid generator component (B) that generates acid on exposure, wherein the component (B) comprises at least one onium salt selected from the group consisting of onium salts having an anion represented by formula (b-0-1) or (b-0-2) shown below: wherein X represents an alkylene group having 2 to 6 carbon atoms, in which at least one hydrogen atom is substituted with a fluorine atom; and each of Y and Z independently represents an alkyl group having 1 to 10 atoms, in which at least one hydrogen atom is substituted with a fluorine atom.
摘要翻译：一种电子束或极紫外线抗蚀剂组合物（EUV），其包含在酸作用下表现出碱溶性变化的树脂组分（A）和曝光时产生酸的光致酸产生剂组分（B），其中组分（B）包含至少一种选自由下式（b-0-1）或（b-0-2）表示的阴离子的鎓盐组成的组中的鎓盐：其中X表示碳原子数2〜6的亚烷基其中至少一个氢原子被氟原子取代; Y和Z各自独立地表示具有1〜10个原子的烷基，其中至少一个氢原子被氟原子取代。

32. 发明申请

US20090269698A1 COMPOUND, POSITIVE RESIST COMPOSITION AND METHOD FOR FORMATION OF RESIST PATTERN 失效
标题翻译：化合物，阳性抗蚀剂组合物和形成耐火图案的方法
公开(公告)号：US20090269698A1
公开(公告)日：2009-10-29
申请号：US12439149
申请日：2007-08-03
申请人： Daiju Shiono , Hideo Hada
发明人： Daiju Shiono , Hideo Hada
IPC分类号： G03F7/20 , C07C69/708 , G03F7/004
CPC分类号： G03F7/0045 , C07C69/712 , G03F7/0392 , G03F7/0397
摘要： The present invention provides a compound that can be used within a resist composition, an intermediate compound for the compound, a positive resist composition, and a method for forming a resist pattern.The present invention discloses a compound represented by a general formula (A-1) shown below [wherein, R′ represents a hydrogen atom or an acid dissociable, dissolution inhibiting group, provided that at least one of the plurality of R′ groups represents an acid dissociable, dissolution inhibiting group; R″ represents an alkyl group of 1 to 10 carbon atoms; R11 to R17 each independently represents an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, which may include a hetero atom within the structure; g and j each independently represents an integer of 1 or greater, and k and q each represents an integer of 0 or greater; a represents an integer of 1 to 3; b represents an integer of 1 or greater, and l and m each independently represents an integer of 0 or greater; c represents an integer of 1 or greater, and n and o each independently represents an integer of 0 or greater; and A represents a group represented by a general formula (Ia) shown below, a group represented by a general formula (Ib) shown below, or an aliphatic cyclic group].
摘要翻译：本发明提供可用于抗蚀剂组合物中的化合物，化合物的中间体化合物，正性抗蚀剂组合物和形成抗蚀剂图案的方法。本发明公开了由下述通式（A-1）表示的化合物[其中，R'表示氢原子或酸解离，溶解抑制基团，条件是多个R'基团中的至少一个表示酸解离，溶解抑制组; R“表示1〜10个碳原子的烷基; R 11〜R 17各自独立地表示1〜10个碳原子的烷基或芳香族烃基，其可以在结构内包含杂原子; g和j各自独立地表示1或更大的整数，并且k和q各自表示0或更大的整数; a表示1〜3的整数， b表示1或更大的整数，l和m各自独立地表示0或更大的整数; c表示1或更大的整数，n和o各自独立地表示0或更大的整数; A表示由下述通式（Ia）表示的基团，由下述通式（Ib）表示的基团或脂族环基]表示。

33. 发明授权

US08257903B2 Compound, positive resist composition and method for formation of resist pattern 失效
标题翻译：化合物，正性抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08257903B2
公开(公告)日：2012-09-04
申请号：US12439149
申请日：2007-08-03
申请人： Daiju Shiono , Hideo Hada
发明人： Daiju Shiono , Hideo Hada
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30 , C07C69/612 , C07C69/66
CPC分类号： G03F7/0045 , C07C69/712 , G03F7/0392 , G03F7/0397
摘要： The present invention provides a compound that can be used within a resist composition, an intermediate compound for the compound, a positive resist composition, and a method for forming a resist pattern.The present invention discloses a compound represented by a general formula (A-1) shown below [wherein, R′ represents a hydrogen atom or an acid dissociable, dissolution inhibiting group, provided that at least one of the plurality of R′ groups represents an acid dissociable, dissolution inhibiting group; R″ represents an alkyl group of 1 to 10 carbon atoms; R11 to R17 each independently represents an alkyl group of 1 to 10 carbon atoms or an aromatic hydrocarbon group, which may include a hetero atom within the structure; g and j each independently represents an integer of 1 or greater, and k and q each represents an integer of 0 or greater; a represents an integer of 1 to 3; b represents an integer of 1 or greater, and l and m each independently represents an integer of 0 or greater; c represents an integer of 1 or greater, and n and o each independently represents an integer of 0 or greater; and A represents a group represented by a general formula (Ia) shown below, a group represented by a general formula (Ib) shown below, or an aliphatic cyclic group].
摘要翻译：本发明提供可用于抗蚀剂组合物中的化合物，化合物的中间体化合物，正性抗蚀剂组合物和形成抗蚀剂图案的方法。本发明公开了由下述通式（A-1）表示的化合物[其中，R'表示氢原子或酸解离，溶解抑制基团，条件是多个R'基团中的至少一个表示酸解离，溶解抑制组; R“表示1〜10个碳原子的烷基; R 11〜R 17各自独立地表示1〜10个碳原子的烷基或芳香族烃基，其可以在结构内包含杂原子; g和j各自独立地表示1或更大的整数，并且k和q各自表示0或更大的整数; a表示1〜3的整数， b表示1或更大的整数，l和m各自独立地表示0或更大的整数; c表示1或更大的整数，n和o各自独立地表示0或更大的整数; A表示由下述通式（Ia）表示的基团，由下述通式（Ib）表示的基团或脂族环基]表示。

34. 发明授权

US08541529B2 Positive resist composition, method of forming resist pattern, and polymeric compound 有权
标题翻译：正型抗蚀剂组合物，形成抗蚀剂图案的方法和聚合物
公开(公告)号：US08541529B2
公开(公告)日：2013-09-24
申请号：US13454399
申请日：2012-04-24
申请人： Takahiro Dazai , Tomoyuki Hirano , Daiju Shiono , Tasuku Matsumiya
发明人： Takahiro Dazai , Tomoyuki Hirano , Daiju Shiono , Tasuku Matsumiya
IPC分类号： C08F20/38 , C08F28/06 , G03F7/039
CPC分类号： G03F7/2041 , C08F28/06 , C08F220/28 , C08F228/06 , G03F7/0045 , G03F7/0397
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) (R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1），其含有由通式（a0-1）表示的结构单元（a0）（R2表示二价连接基团，R3表示在其环骨架中含有-SO2-的环状基团）和结构单元（a1）得自来自含有酸解离的溶解抑制基团的丙烯酸酯。

35. 发明授权

US08475997B2 Resist composition for immersion exposure, method of forming resist pattern, and fluorine-containing polymeric compound 有权
标题翻译：用于浸渍曝光的抗蚀组合物，形成抗蚀图案的方法和含氟聚合物
公开(公告)号：US08475997B2
公开(公告)日：2013-07-02
申请号：US13336131
申请日：2011-12-23
申请人： Daiju Shiono , Tomoyuki Hirano , Sanae Furuya , Takahiro Dazai , Hiroaki Shimizu , Tsuyoshi Kurosawa , Hideto Nito , Tsuyoshi Nakamura
发明人： Daiju Shiono , Tomoyuki Hirano , Sanae Furuya , Takahiro Dazai , Hiroaki Shimizu , Tsuyoshi Kurosawa , Hideto Nito , Tsuyoshi Nakamura
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： C08F214/18 , C08F220/18 , C08F220/24 , C08F220/28 , G03F7/0046 , G03F7/0392 , G03F7/0397 , G03F7/2041 , Y10S430/108 , Y10S430/111
摘要： A resist composition for immersion exposure including: a fluorine-containing polymeric compound (F) containing a structural unit (f1) having a base dissociable group and a structural unit (f2) represented by general formula (f2-1) (wherein R represents a hydrogen atom, a lower alkyl group or a halogenated lower alkyl group; and W is a group represented by any one of general formulas (w-1) to (w-4)); a base component (A) that exhibits changed solubility in an alkali developing solution under the action of acid; and an acid generator component (B) that generates acid upon exposure.
摘要翻译：一种浸渍曝光用抗蚀剂组合物，包括：含有具有碱解离基团的结构单元（f1）和由通式（f2-1）表示的结构单元（f2）的含氟聚合物（F）（其中R表示氢原子，低级烷基或卤代低级烷基; W为通式（w-1）〜（w-4）中任一个表示的基团）; 在酸性作用下在碱性显影液中表现出改变的溶解性的碱成分（A）和在曝光时产生酸的酸发生剂组分（B）。

36. 发明授权

US08440385B2 Positive resist composition, method of forming resist pattern and polymeric compound 有权
标题翻译：正型抗蚀剂组合物，形成抗蚀剂图案和聚合物的方法
公开(公告)号：US08440385B2
公开(公告)日：2013-05-14
申请号：US12979076
申请日：2010-12-27
申请人： Tomoyuki Hirano , Daiju Shiono , Masatoshi Arai
发明人： Tomoyuki Hirano , Daiju Shiono , Masatoshi Arai
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , C08F220/38 , C08F2220/283 , G03F7/0045 , G03F7/0046 , C08F220/18 , C08F2220/281 , C08F2220/382
摘要： A positive resist composition including a base component (A′) which exhibits increased solubility in an alkali developing solution under the action of acid and generates acid upon exposure, the base component (A′) including a resin component (A1) having a structural unit (a0-1) represented by general formula (a0-1), a structural unit (a0-2) which generates acid upon exposure and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group (wherein R1 represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof).
摘要翻译：一种正性抗蚀剂组合物，其包含在酸性作用下在碱性显影液中显示出增加的溶解性并在曝光时产生酸的基础组分（A'），所述基础组分（A'）包括具有结构单元的树脂组分（A1）由通式（a0-1）表示的（a0-1），曝光时产生酸的结构单元（a0-2）和由含有酸解离的溶解抑制基团的丙烯酸酯衍生的结构单元（a1）（其中 R 1表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基，R 2表示二价连接基团，R 3表示在其环骨架中含有-SO 2 - 的环状基团）。

37. 发明申请

US20120308928A1 RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, POLYMERIC COMPOUND AND METHOD OF PRODUCING THE SAME 有权
标题翻译：耐蚀组合物，耐热型图案的形成方法，聚合物及其制造方法
公开(公告)号：US20120308928A1
公开(公告)日：2012-12-06
申请号：US13477516
申请日：2012-05-22
申请人： Tomoyuki Hirano , Daiju Shiono , Daichi Takaki , Junichi Tsuchiya
发明人： Tomoyuki Hirano , Daiju Shiono , Daichi Takaki , Junichi Tsuchiya
IPC分类号： C08F228/06 , G03F7/20 , G03F7/004
CPC分类号： C08F220/32 , C08F220/58 , G03F7/0046 , G03F7/0397 , G03F7/2041 , G03F7/38 , Y10S430/107 , Y10S430/111 , C08F220/28 , C08F2220/585 , C08F220/18 , C08F220/20
摘要： A resist composition including a base component (A) that exhibits changed solubility in a developing solution under action of acid and an acid generator component (B) that generates acid upon exposure, wherein the base component (A) contains a resin component (A1) including a structural unit (a0) represented by general formula (a0-1) shown below and a structural unit (a1)) containing an acid decomposable group that exhibits increased polarity under action of acid, and the amount of the structural unit (a0) is less than 50 mol %, wherein R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms; R1 represents a divalent linking group; R2 represents a —SO2— containing cyclic group; and v represents 0 or 1.
摘要翻译：一种抗蚀剂组合物，其包含在酸作用下显影溶液中溶解度变差的碱成分（A）和曝光时产生酸的酸发生剂成分（B），其中，所述基材（A）含有树脂成分（A1）（a0）表示的结构单元（a0）和结构单元（a1）），其含有在酸作用下显示出极性增加的酸分解基团，结构单元（a0）小于50摩尔％，其中R表示氢原子，1至5个碳原子的烷基或1至5个碳原子的卤代烷基; R1表示二价连接基团; R2表示含-SO2-的环状基团; v表示0或1。

38. 发明申请

US20120208131A1 METHOD OF FORMING RESIST PATTERN 有权
标题翻译：形成电阻图案的方法
公开(公告)号：US20120208131A1
公开(公告)日：2012-08-16
申请号：US13372740
申请日：2012-02-14
申请人： Tomoyuki Hirano , Daiju Shiono
发明人： Tomoyuki Hirano , Daiju Shiono
IPC分类号： G03F7/20
CPC分类号： G03F7/325 , G03F7/0397 , G03F7/2041
摘要： A method of forming a resist pattern including: forming a resist film on a substrate using a resist composition containing a base component (A) which exhibits increased solubility in an organic solvent under action of acid and an acid generator component which generates acid upon exposure; conducting exposure of the resist film; and patterning the resist film by positive development using a developing solution containing the organic solvent to form a resist pattern, wherein a resin component containing a structural unit derived from an acrylate ester which may have a hydrogen atom bonded to a carbon atom on the α-position substituted with a substituent and contains an acid decomposable group which exhibits increased polarity by action of acid is used as the component (A), and a developing solution that contains a polar organic solvent but contains substantially no alkali components is used as the developing solution.
摘要翻译：一种形成抗蚀剂图案的方法，包括：使用含有在酸的作用下在有机溶剂中显示增加的溶解度的基础组分（A）的抗蚀剂组合物和在曝光时产生酸的酸产生剂组分的抗酸剂组合物在基材上形成抗蚀剂膜; 进行抗蚀剂膜的曝光; 通过使用含有有机溶剂的显影液进行正显影来形成抗蚀剂膜以形成抗蚀剂图案，其中含有可以具有与α-碳原子上的碳原子键合的氢原子的丙烯酸酯的结构单元的树脂组分，作为成分（A），使用被取代基取代的含有酸分解性基团的酸分解性基团，作为成分（A），使用含有极性有机溶剂但不含碱成分的显影液作为显影液。

39. 发明申请

US20120202151A1 POSITIVE RESIST COMPOSITION, METHOD OF FORMING RESIST PATTERN, AND POLYMERIC COMPOUND 有权
标题翻译：正极性组合物，形成耐火模式的方法和聚合物
公开(公告)号：US20120202151A1
公开(公告)日：2012-08-09
申请号：US13454399
申请日：2012-04-24
申请人： Takahiro Dazai , Tomoyuki Hirano , Daiju Shiono , Tasuku Matsumiya
发明人： Takahiro Dazai , Tomoyuki Hirano , Daiju Shiono , Tasuku Matsumiya
IPC分类号： G03F7/039 , C08F28/06
CPC分类号： G03F7/2041 , C08F28/06 , C08F220/28 , C08F228/06 , G03F7/0045 , G03F7/0397
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1) (R2 represents a divalent linking group, and R3 represents a cyclic group containing —SO2— within the ring skeleton thereof) and a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1），其含有由通式（a0-1）表示的结构单元（a0）（R2表示二价连接基团，R3表示在其环骨架中含有-SO2-的环状基团）和结构单元（a1）得自来自含有酸解离的溶解抑制基团的丙烯酸酯。

40. 发明申请

US20120196226A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20120196226A1
公开(公告)日：2012-08-02
申请号：US13343481
申请日：2012-01-04
申请人： Shinji Kumada , Satoshi Maemori , Masatoshi Arai , Daiju Shiono
发明人： Shinji Kumada , Satoshi Maemori , Masatoshi Arai , Daiju Shiono
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0045 , G03F7/0397 , G03F7/20
摘要： A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.
摘要翻译：一种抗蚀剂组合物，其包含在酸的作用下在显影液中溶解度变化的碱成分（A），可以用于使用波长为193nm以下的光作为曝光光源的光刻工序，暴露时产生酸的酸产生剂组分（B）和具有如下所示的通式（c0）表示的结构单元（c0）的聚合化合物（C），其中聚合化合物（C）的量小于25 相对于100质量份的基础成分（A）为质量份。在该式中，R表示氢原子，1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基，R1表示具有一个或多个伯或仲醇羟基的有机基团，或链状叔醇羟基。

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