会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明授权
    • Resist composition, and method of forming resist pattern
    • 抗蚀剂组合物和形成抗蚀剂图案的方法
    • US08658343B2
    • 2014-02-25
    • US13373965
    • 2011-12-05
    • Masatoshi AraiJunichi TsuchiyaDaiju ShionoTomoyuki HiranoDaichi Takaki
    • Masatoshi AraiJunichi TsuchiyaDaiju ShionoTomoyuki HiranoDaichi Takaki
    • G03F7/004G03F7/039
    • G03F7/0045G03F7/0382G03F7/0397G03F7/2041
    • A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, and an acid generator component (B) which generates acid upon exposure, wherein the base component (A) contains a polymeric compound (A1) having a structural unit (a5) represented by general formula (a5-1). In formula (a5-1), R represents a hydrogen atom, an alkyl group or a halogenated alkyl group, X represents single bond or divalent linking group, W represents a cyclic alkylene group which may include an oxygen atom at arbitrary position, each of Ra and Rb independently represents a hydrogen atom or an alkyl group which may include an oxygen atom at arbitrary position, or alternatively, Ra and Rb may be bonded to each other to form a ring together with the nitrogen atom in the formula, and p represents integer of 1 to 3.
    • 一种抗蚀剂组合物,其包含在酸的作用下在显影溶液中显示出改变的溶解性的碱成分(A)和曝光时产生酸的酸产生剂成分(B),其中,所述碱成分(A)含有高分子化合物 A1)具有由通式(a5-1)表示的结构单元(a5)。 式(a5-1)中,R表示氢原子,烷基或卤代烷基,X表示单键或二价连接基,W表示可以在任意位置含有氧原子的环状亚烷基, Ra和Rb独立地表示氢原子或可以在任意位置包含氧原子的烷基,或者Ra和Rb可以与式中的氮原子一起形成环,p表示 1〜3的整数。
    • 7. 发明申请
    • RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN
    • 耐蚀组合物和形成耐力图案的方法
    • US20120196226A1
    • 2012-08-02
    • US13343481
    • 2012-01-04
    • Shinji KumadaSatoshi MaemoriMasatoshi AraiDaiju Shiono
    • Shinji KumadaSatoshi MaemoriMasatoshi AraiDaiju Shiono
    • G03F7/20G03F7/004
    • G03F7/0045G03F7/0397G03F7/20
    • A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.
    • 一种抗蚀剂组合物,其包含在酸的作用下在显影液中溶解度变化的碱成分(A),可以用于使用波长为193nm以下的光作为曝光光源的光刻工序, 暴露时产生酸的酸产生剂组分(B)和具有如下所示的通式(c0)表示的结构单元(c0)的聚合化合物(C),其中聚合化合物(C)的量小于25 相对于100质量份的基础成分(A)为质量份。 在该式中,R表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基,R1表示具有一个或多个伯或仲醇羟基的有机基团,或 链状叔醇羟基。
    • 9. 发明授权
    • Resist composition and method of forming resist pattern
    • 抗蚀剂图案的抗蚀剂组成和方法
    • US09012125B2
    • 2015-04-21
    • US13343481
    • 2012-01-04
    • Shinji KumadaSatoshi MaemoriMasatoshi AraiDaiju Shiono
    • Shinji KumadaSatoshi MaemoriMasatoshi AraiDaiju Shiono
    • G03F7/004G03F7/20G03F7/039
    • G03F7/0045G03F7/0397G03F7/20
    • A resist composition including a base component (A), which exhibits changed solubility in a developing solution under the action of acid and can be used in a lithography process that employs light having a wavelength of 193 nm or less as the exposure light source, an acid generator component (B) which generates acid upon exposure, and a polymeric compound (C) having a structural unit (c0) represented by general formula (c0) shown below, wherein the amount of the polymeric compound (C) is less than 25 parts by mass relative to 100 parts by mass of the base component (A). In the formula, R represents a hydrogen atom, an alkyl group of 1 to 5 carbon atoms or a halogenated alkyl group of 1 to 5 carbon atoms, and R1 represents an organic group having one or more primary or secondary alcoholic hydroxyl groups, or a chain-like tertiary alcoholic hydroxyl group.
    • 一种抗蚀剂组合物,其包含在酸的作用下在显影液中溶解度变化的碱成分(A),可以用于使用波长为193nm以下的光作为曝光光源的光刻工序, 暴露时产生酸的酸产生剂组分(B)和具有如下所示的通式(c0)表示的结构单元(c0)的聚合化合物(C),其中聚合化合物(C)的量小于25 相对于100质量份的基础成分(A)为质量份。 在该式中,R表示氢原子,1〜5个碳原子的烷基或1〜5个碳原子的卤代烷基,R1表示具有一个或多个伯或仲醇羟基的有机基团,或 链状叔醇羟基。