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    • 33. 发明授权
    • Monolithic reconfigurable optical multiplexer systems and methods
    • 单片可重构光复用器系统和方法
    • US06658179B2
    • 2003-12-02
    • US09986395
    • 2001-11-08
    • Joel A. KubbyPinyen LinJingkuang ChenYi Su
    • Joel A. KubbyPinyen LinJingkuang ChenYi Su
    • G02B612
    • G02B6/356G02B6/12021G02B6/12033G02B6/2938G02B6/3508G02B6/3512G02B6/3584G02B6/3596G02B2006/12061G02B2006/12097G02B2006/12107G02B2006/12145G02B2006/12164
    • A silicon demultiplexer, a plurality of silicon switches and a silicon multiplexer are monolithically integrated on a single silicon chip. In embodiments, the silicon demultiplexer and the silicon multiplexer each comprise a diffraction grating. In other embodiments, the silicon demultiplexer and the silicon multiplexer each comprise an arrayed waveguide grating. In various exemplary embodiments, the silicon optical switches comprise optical switches, micromachined torsion mirrors, electrostatic micromirrors, and/or tilting micromirrors. In use, an optical signal comprising a multiplexed data stream is input into the monolithic reconfigurable optical multiplexer. An optical signal that comprises a modified multiplexed data stream may be output. In an optical communications system, the silicon demultiplexer communicates with an input optical fiber, the plurality of silicon optical switches communicate between the silicon demultiplexer and the silicon multiplexer, and the silicon multiplexer communicates with an output optical fiber. In various embodiments, the optical switches are fabricated to be self-aligned.
    • 硅解复用器,多个硅开关和硅多路复用器单片集成在单个硅芯片上。 在实施例中,硅解复用器和硅多路复用器各自包括衍射光栅。 在其他实施例中,硅解复用器和硅多路复用器均包括阵列波导光栅。 在各种示例性实施例中,硅光开关包括光开关,微机械扭转镜,静电微镜和/或倾斜微镜。 在使用中,包括复用数据流的光信号被输入到单片可重构光复用器。 可以输出包括修改的多路复用数据流的光信号。 在光通信系统中,硅解复用器与输入光纤通信,多个硅光开关在硅解复用器和硅多路复用器之间通信,并且硅复用器与输出光纤通信。 在各种实施例中,光开关被制造成自对准。
    • 36. 发明授权
    • Electromechanical memory cell
    • 机电式记忆体
    • US06473361B1
    • 2002-10-29
    • US09709096
    • 2000-11-10
    • Jingkuang ChenFeixia PanJoel A. Kubby
    • Jingkuang ChenFeixia PanJoel A. Kubby
    • G11C800
    • G11C23/00B81B3/0054B81B2203/0118B82Y10/00G11B9/14H01H59/0009H01H2001/0047H01H2037/008
    • A low power, nonvolatile microelectromechanical memory cell stores data. This memory cell uses a pair of cantilevers, to store a bit of information. The on and off state of this mechanical latch is switched by using, for example, electrostatic forces applied sequentially on the two cantilevers. The cantilevers are partially overlapping. Changing the relative position of the cantilevers determines whether they are electrically conducting or not. One state represents a logical “1”. The other state represents a logical “0”. After a bit of data is written, the cantilevers are locked by mechanical forces inherent in the cantilevers and will not change state unless a sequential electrical writing signal is applied. The sequential nature of the required writing signal makes inadvertent or noise related data corruption highly unlikely. This MEMS memory cell can be implemented, for example, using a three-polysilicon-layer surface micro-machining process. The mechanical nature of the memory cell makes the cell immune to radiation. The cell is compatible with existing VLSI processes. Therefore monolithic memory devices comprising, for example, a plurality of the memory cells, read/write circuitry, and I/O circuitry, can be made using inexpensive, standard processes. The memory devices can be used in almost any electronic device requiring memory. For example the memory device is used in document processors, cell phones and satellites.
    • 低功率,非易失性微机电存储单元存储数据。 该存储单元使用一对悬臂来存储一些信息。 通过使用例如依次施加在两个悬臂上的静电力来切换该机械闩锁的开和关状态。 悬臂部分重叠。 改变悬臂的相对位置确定它们是否导电。 一个状态代表逻辑“1”。 另一个状态表示逻辑“0”。 在写入一些数据之后,悬臂由悬臂中固有的机械力锁定,除非应用顺序的电气写入信号,否则不会改变状态。 所需写入信号的顺序性质使得无意或噪声相关的数据损坏非常不可能。 该MEMS存储单元可以例如使用三晶硅层表面微加工工艺来实现。 记忆细胞的机械性质使得细胞免受辐射。 该小区与现有的VLSI过程兼容。 因此,可以使用廉价的标准工艺来制造包括例如多个存储单元,读/写电路和I / O电路的单片存储器件。 存储器件可用于几乎任何需要存储器的电子设备中。 例如,存储器件用于文件处理器,蜂窝电话和卫星。