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31. 发明申请

WO2003102266A1 DEPOSITION OF COPPER FILMS 审中-公开
标题翻译：铜箔沉积
公开(公告)号：WO2003102266A1
公开(公告)日：2003-12-11
申请号：PCT/US2003/017367
申请日：2003-06-02
申请人： APPLIED MATERIALS, INC.
发明人： CHEN, Ling , NORMAN, John, A. , CHANG, Mei
IPC分类号： C23C16/455
CPC分类号： H01L21/76877 , C23C16/045 , C23C16/18 , C23C16/45553 , H01L21/28562
摘要： A method of forming a copper film on a substrate is described. The copper film is formed using a cyclical deposition technique by alternately adsorbing a copper-containing precursor and a reducing gas on a substrate. One or more of the time intervals for the copper-containing precursor, the time intervals for the reducing gas and the time intervals of non-pulsing may have different values for one or more deposition cycles of the cyclical deposition process. The copper film formation is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the copper film may be used as interconnect metallization.
摘要翻译：描述了在基板上形成铜膜的方法。使用循环沉积技术通过在基底上交替吸附含铜前体和还原气体来形成铜膜。含铜前体的一个或多个时间间隔，还原气体的时间间隔和非脉冲的时间间隔对于循环沉积过程的一个或多个沉积循环可以具有不同的值。铜膜形成与集成电路制造工艺兼容。在一个集成电路制造工艺中，铜膜可以用作互连金属化。

32. 发明申请

WO1995023428A2 CHEMICAL VAPOR DEPOSITION CHAMBER 审中-公开
标题翻译：化学气相沉积室
公开(公告)号：WO1995023428A2
公开(公告)日：1995-08-31
申请号：PCT/US1995002138
申请日：1995-02-21
申请人： APPLIED MATERIALS, INC.
发明人： APPLIED MATERIALS, INC. , SINHA, Ashok , CHANG, Mei , PERLOV, Ilya , LITTAU, Karl , MORRISON, Alan , LEI, Lawrence, Chung-Lai
IPC分类号： H01L21/00
CPC分类号： C23C16/45521 , C23C16/4583 , C23C16/4585
摘要： A chemical vapor deposition chamber (10) includes a substrate support member (18) positionable therein to receive a substrate (24) thereon for processing. The support member (18) is positioned in the chamber (10) by a moveable stem (20) which extends through a sealed aperture (100) in the base of the chamber (10). To reduce heat transfer from the stem (20) outwardly of the chamber, the stem (20) includes a heat choke portion (44). To ensure that the support member (18) does not droop or sag under the high temperature conditions present in the chamber (10), a secondary plate (91) having high thermal resistance is maintained against the non-substrate receiving side of the support member (18). The use of the secondary plate (91) enables the use of highly thermally conductive, but low thermal strength, materials for the support member (18). The chamber (10) also includes a detection system for detecting the presence of mis-aligned, cracked or warped substrates (24) in the chamber (10). The support member (18) preferably incudes a plurality of vacuum grooves (77, 78) therein, which are maintained at a vacuum pressure to firmly adhere the substrate (24) to the support member (18) during processing. If the vacuum is not maintainable in the grooves (77, 78), this is indicative of a cracked, mis-aligned or warped substrate (77, 78). If this condition occurs, a controller shuts down the chamber and indicates the presence of a cracked, warped or mis-aligned substrate (24). The chamber also provides for edge protection of the substrates (24) as they are processed in the chamber (10). This is provided by creating a purge gas channel (220) about the perimeter of the substrate (24) and aligning the edge of the substrate (24) such that a purge gas gap is provided about the perimeter of the substrate edge.
摘要翻译：化学气相沉积室（10）包括可定位在其中的衬底支撑构件（18），用于接收其上的用于处理的衬底（24）。支撑构件（18）通过可移动的杆（20）定位在腔室（10）中，活动杆延伸穿过腔室（10）的底部中的密封孔（100）。为了减少从腔室（20）向外的热传递，杆（20）包括热扼流部分（44）。为了确保支撑构件（18）在室（10）中存在的高温条件下不下垂或下垂，具有高耐热性的次级板（91）保持在支撑构件的非基板接收侧（18）。使用二次板（91）使得能够使用高导热但低热强度的材料用于支撑构件（18）。腔室（10）还包括检测系统，用于检测在腔室（10）中是否存在不对齐的，破裂的或翘曲的基底（24）。支撑构件（18）优选地在其中包括多个真空槽（77,78），其保持在真空压力下，以在加工期间将基板（24）牢固地附接到支撑构件（18）。如果凹槽（77,78）中的真空不能维持，则这表示裂纹的，不对准的或翘曲的基底（77,78）。如果发生这种情况，则控制器关闭室并指示存在破裂，弯曲或不对准衬底（24）。当腔室（10）被处理时，腔室还提供衬底（24）的边缘保护。这通过围绕衬底（24）的周边形成吹扫气体通道（220）并对准衬底（24）的边缘来提供，使得围绕衬底边缘的周边设置净化气体间隙。

33. 发明申请

WO2021207540A1 APPARATUSES AND METHODS OF PROTECTING NICKEL AND NICKEL CONTAINING COMPONENTS WITH THIN FILMS 审中-公开
公开(公告)号：WO2021207540A1
公开(公告)日：2021-10-14
申请号：PCT/US2021/026449
申请日：2021-04-08
申请人： APPLIED MATERIALS, INC.
发明人： LEI, Pingyan , WU, Dien-Yeh , HE, Xiao Ming , SUN, Jennifer Y. , ZHOU, Lei , KURATOMI, Takashi , GELATOS, Avgerinos V. , CHANG, Mei , MARCUS, Steven D.
IPC分类号： C23C16/455 , C23C16/40 , H01L21/28
摘要： Methods and apparatus for depositing a coating on a semiconductor manufacturing apparatus component are provided herein. In some embodiments, a method of depositing a coating on a semiconductor manufacturing apparatus component includes: sequentially exposing a semiconductor manufacturing apparatus component including nickel or nickel alloy to an aluminum precursor and a reactant to form an aluminum containing layer on a surface of the semiconductor manufacturing apparatus component by a deposition process.

34. 发明申请

WO2018098059A1 DEPOSITION OF METAL FILMS 审中-公开
公开(公告)号：WO2018098059A1
公开(公告)日：2018-05-31
申请号：PCT/US2017/062479
申请日：2017-11-20
申请人： APPLIED MATERIALS, INC.
发明人： GELATOS, Avgerinos V. , KURATOMI, Takashi , LIM, Hyuck , CHEN, I-Cheng , CHANG, Mei
IPC分类号： H01L21/02 , H01L21/285
摘要： Methods to selectively deposit titanium-containing films on silicon-containing surfaces in high aspect ratio features of substrates comprise plasma-enhanced chemical vapor deposition (PECVD) process at a plasma powers in the range of about 1 to less than about 700 mWatts/cm2 and frequencies in the range of about 10 kHz to about 50 MHz. The titanium films may be selectively deposited with a selectivity in the range of at least about 1.3:1 metallic silicon surfaces relative to silicon dioxide surfaces.

35. 发明申请

WO2018094329A1 METHODS TO SELECTIVELY DEPOSIT CORROSION-FREE METAL CONTACTS 审中-公开
公开(公告)号：WO2018094329A1
公开(公告)日：2018-05-24
申请号：PCT/US2017/062553
申请日：2017-11-20
申请人： APPLIED MATERIALS, INC.
发明人： XU, Yi , MA, Feiyue , LEI, Yu , DAITO, Kazuya , BANTHIA, Vikash , WU, Kai , WANG, Jenn Yue , CHANG, Mei
IPC分类号： H01L29/66 , H01L21/02 , H01L21/28 , H01L21/324
CPC分类号： H01L23/53209 , H01L21/02068 , H01L21/02074 , H01L21/28568 , H01L21/32053 , H01L21/76846 , H01L21/76849 , H01L21/7685 , H01L21/76864 , H01L21/76867 , H01L21/76877 , H01L21/76882 , H01L21/76883 , H01L21/76889 , H01L23/528 , H01L23/53266
摘要： Methods of forming a contact line comprising cleaning the surface of a cobalt film in a trench and forming a protective layer on the surface of the cobalt, the protective layer comprising one or more of a silicide or germide. Semiconductor devices with the contact lines are also disclosed.

36. 发明申请

WO2017091571A1 METHODS FOR FORMING LOW-RESISTANCE CONTACTS THROUGH INTEGRATED PROCESS FLOW SYSTEMS 审中-公开
标题翻译：通过集成工艺流程系统形成低电阻接触的方法
公开(公告)号：WO2017091571A1
公开(公告)日：2017-06-01
申请号：PCT/US2016/063321
申请日：2016-11-22
申请人： APPLIED MATERIALS, INC.
发明人： LEI, Yu , BANTHIA, Vikash , WU, Kai , FU, Xinyu , XU, Yi , DAITO, Kazuya , MA, Feiyue , AGARWAL, Pulkit , LIN, Chi-Chou , WU, Dien-Yeh , JIAN, Guoqiang , TANG, Wei V. , BAKKE, Jonathan , CHANG, Mei , RAMAMURTHY, Sundar
IPC分类号： H01L21/02 , H01L21/205 , H01L21/285
CPC分类号： H01L21/76843 , C23C16/0227 , C23C16/0281 , C23C16/045 , C23C16/06 , C23C16/08 , C23C16/4401 , C23C16/45536 , C23C16/45544 , C23C16/46 , C23C16/505 , C23C16/52 , C23C16/54 , H01L21/31116 , H01L21/76802 , H01L21/76877
摘要： Methods for forming metal contacts having tungsten liner layers are provided herein. In some embodiments, a method of processing a substrate includes: exposing a substrate, within a first substrate process chamber, to a plasma formed from a first gas comprising a metal organic tungsten precursor gas or a fluorine-free tungsten halide precursor to deposit a tungsten liner layer, wherein the tungsten liner layer is deposited atop a dielectric layer and within a feature formed in a first surface of the dielectric layer of a substrate; transferring the substrate to a second substrate process chamber without exposing the substrate to atmosphere; and exposing the substrate to a second gas comprising a tungsten fluoride precursor to deposit a tungsten fill layer atop the tungsten liner layer.
摘要翻译：本文提供了用于形成具有钨衬垫层的金属触点的方法。在一些实施例中，一种处理衬底的方法包括：在第一衬底处理室内将衬底暴露于由包含金属有机钨前体气体或无氟卤化钨前体的第一气体形成的等离子体以沉积钨衬里层，其中所述钨衬里层沉积在介电层顶上并且形成在衬底的所述介电层的第一表面中的特征内; 将衬底转移到第二衬底处理室而不将衬底暴露于大气; 以及将衬底暴露于包含氟化钨前体的第二气体以在钨衬垫层顶上沉积钨填充层。

37. 发明申请

WO2014164743A1 HIGH TEMPERATURE PROCESS CHAMBER LID 审中-公开
标题翻译：高温过程室
公开(公告)号：WO2014164743A1
公开(公告)日：2014-10-09
申请号：PCT/US2014/023377
申请日：2014-03-11
申请人： APPLIED MATERIALS, INC. , DURUKAN, Ilker , HUSTON, Joel M. , WU, Dien-Yeh , KAO, Chien-Teh , CHANG, Mei
发明人： DURUKAN, Ilker , HUSTON, Joel M. , WU, Dien-Yeh , KAO, Chien-Teh , CHANG, Mei
IPC分类号： C23C16/00 , C23C16/44 , H01L21/205
CPC分类号： H01L21/67126 , H01L21/6719
摘要： Lid assemblies for processing chamber and processing chambers including the lid assemblies are described. The lid assemblies include a high temperature lid module and a housing. The high temperature lid module being positioned adjacent a process liner of a processing chamber. The flexible housing positioned around the high temperature lid module and joined to the high temperature lid module with an elastomeric ring.
摘要翻译：描述了包括盖组件的处理室和处理室的盖组件。盖组件包括高温盖模块和壳体。高温盖模块位于处理室的处理衬垫附近。柔性壳体围绕高温盖模块定位，并与弹性体环连接到高温盖模块。

38. 发明申请

WO2014066792A1 METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN 审中-公开
标题翻译：用于沉积氟/无碳一致性钨酸盐的方法
公开(公告)号：WO2014066792A1
公开(公告)日：2014-05-01
申请号：PCT/US2013/066866
申请日：2013-10-25
申请人： APPLIED MATERIALS, INC. , FU, Xinyu , GANDIKOTA, Srinivas , GELATOS, Avgerinos V. , NOORI, Atif , CHANG, Mei , THOMPSON, David , GHANAYEM, Steve G.
发明人： FU, Xinyu , GANDIKOTA, Srinivas , GELATOS, Avgerinos V. , NOORI, Atif , CHANG, Mei , THOMPSON, David , GHANAYEM, Steve G.
IPC分类号： H01L21/205
CPC分类号： H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
摘要： Provided are atomic layer deposition methods to deposit a tungsten film or tungsten- containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCI 5 or WCI 6 .
摘要翻译：提供了使用包含一种或多种五氯化钨，具有经验式WCI5或WCI6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

39. 发明申请

WO2013082084A1 METHODS FOR ATOMIC LAYER ETCHING 审中-公开
标题翻译：原子层蚀刻方法
公开(公告)号：WO2013082084A1
公开(公告)日：2013-06-06
申请号：PCT/US2012/066757
申请日：2012-11-28
申请人： APPLIED MATERIALS, INC. , CHANG, Mei , YUDOVSKY, Joseph
发明人： CHANG, Mei , YUDOVSKY, Joseph
IPC分类号： H01L21/311 , H01L21/3065 , H01L21/205
CPC分类号： H01L21/31116 , H01J37/32357 , H01J37/3244 , H01L21/3065 , H01L21/67069 , H01L21/67207 , H01L21/67248 , H01L21/6776
摘要： Provided are methods of etching a substrate using atomic layer deposition apparatus. Atomic layer deposition apparatus including a gas distribution plate with a thermal element are discussed. The thermal element is capable of locally changing the temperature of a portion of the surface of the substrate to vaporize an etch layer deposited on the substrate.
摘要翻译：提供了使用原子层沉积装置蚀刻衬底的方法。讨论了包括具有热元件的气体分布板的原子层沉积设备。热元件能够局部地改变衬底的表面的一部分的温度以蒸发沉积在衬底上的蚀刻层。

40. 发明申请

WO2012177716A2 N-METAL FILM DEPOSITION WITH INITIATION LAYER 审中-公开
标题翻译：带有起始层的N金属膜沉积
公开(公告)号：WO2012177716A2
公开(公告)日：2012-12-27
申请号：PCT/US2012/043278
申请日：2012-06-20
申请人： APPLIED MATERIALS, INC. , GANGULI, Seshadri , LU, Xinliang , NOORI, Atif , MAHAJANI, Maitreyee , CHEN, Shih, Chung , CHANG, Mei
发明人： GANGULI, Seshadri , LU, Xinliang , NOORI, Atif , MAHAJANI, Maitreyee , CHEN, Shih, Chung , CHANG, Mei
IPC分类号： H01L21/31 , H01L21/205 , H01L21/336 , H01L29/78
CPC分类号： H01L21/28088 , H01L21/02697 , H01L29/4966
摘要： Provided are methods of depositing N-Metals onto a substrate. Methods include first depositing an initiation layer. The initiation layer may comprise or consist of cobalt, tantalum, nickel, titanium or TaAIC. These initiation layers can be used to deposit TaC x .
摘要翻译：提供了将N-金属沉积到基底上的方法。方法包括首先沉积起始层。起始层可以包括钴，钽，镍，钛或TaAIC。这些起始层可用于沉积TaCx。

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