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1. 发明申请

WO2014066792A1 METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN 审中-公开
标题翻译：用于沉积氟/无碳一致性钨酸盐的方法
公开(公告)号：WO2014066792A1
公开(公告)日：2014-05-01
申请号：PCT/US2013/066866
申请日：2013-10-25
申请人： APPLIED MATERIALS, INC. , FU, Xinyu , GANDIKOTA, Srinivas , GELATOS, Avgerinos V. , NOORI, Atif , CHANG, Mei , THOMPSON, David , GHANAYEM, Steve G.
发明人： FU, Xinyu , GANDIKOTA, Srinivas , GELATOS, Avgerinos V. , NOORI, Atif , CHANG, Mei , THOMPSON, David , GHANAYEM, Steve G.
IPC分类号： H01L21/205
CPC分类号： H01L21/28562 , C23C16/0272 , C23C16/06 , C23C16/14 , C23C16/345 , C23C16/42 , C23C16/45525 , C23C16/45551 , C23C16/45553 , C23C16/45563 , C23C16/45565 , C23C16/4557 , C23C16/45574 , H01L21/28088 , H01L21/28506 , H01L21/32051 , H01L21/32053 , H01L21/76877
摘要： Provided are atomic layer deposition methods to deposit a tungsten film or tungsten- containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCI 5 or WCI 6 .
摘要翻译：提供了使用包含一种或多种五氯化钨，具有经验式WCI5或WCI6的化合物的含钨反应气体沉积钨膜或含钨膜的原子层沉积方法。

2. 发明申请

WO2014008365A1 DEPOSITION OF N-METAL FILMS COMPRISING ALUMINUM ALLOYS 审中-公开
标题翻译：包含铝合金的N金属膜的沉积
公开(公告)号：WO2014008365A1
公开(公告)日：2014-01-09
申请号：PCT/US2013/049266
申请日：2013-07-03
申请人： APPLIED MATERIALS, INC. , GANDIKOTA, Srinivas , LU, Xinliang , CHEN, Shih Chung , TANG, Wei , ZHOU, Jing , GANGULI, Seshadri , THOMPSON, David , ANTHIS, Jeffrey W. , NOORI, Atif , GUNGOR, Faruk , WU, Dien-Yeh , CHANG, Mei , FU, Xinyu , LEI, Yu
发明人： GANDIKOTA, Srinivas , LU, Xinliang , CHEN, Shih Chung , TANG, Wei , ZHOU, Jing , GANGULI, Seshadri , THOMPSON, David , ANTHIS, Jeffrey W. , NOORI, Atif , GUNGOR, Faruk , WU, Dien-Yeh , CHANG, Mei , FU, Xinyu , LEI, Yu
IPC分类号： C23C16/12 , C23C16/44
CPC分类号： C23C18/00 , C23C16/08 , C23C16/18 , C23C16/45527 , C23C16/45534 , C23C16/45553
摘要： Provided are methods of depositing films comprising alloys of aluminum, which may be suitable as N-metal films. Certain methods comprise exposing a substrate surface to a metal halide precursor comprising a metal halide selected from TiCl 4 , TaCl 5 and HfCl 4 to provide a metal halide at the substrate surface; purging metal halide; exposing the substrate surface to an alkyl aluminum precursor comprising one or more of dimethyaluminum hydride, diethylhydridoaluminum, methyldihydroaluminum, and an alkyl aluminum hydrides of the formula [(CxHy) 3-a AlH a ]n, wherein x has a value of 1 to 3, y has a value of 2x+2, a has a value of 1 to 2, and n has a value of 1 to 4; and exposing the substrate surface to an alane-containing precursor comprising one or more of dimethylethylamine alane, methylpyrrolidinealane, di(methylpyrolidine)alane, and trimethyl amine alane borane. Other methods comprise exposing a substrate surface to a metal precursor and trimethyl amine alane borane.
摘要翻译：提供了沉积包括铝合金的膜的方法，其可以适合作为N-金属膜。某些方法包括将衬底表面暴露于包含选自TiCl 4，TaCl 5和HfCl 4的金属卤化物的金属卤化物前体，以在衬底表面提供金属卤化物; 清洗金属卤化物; 将基材表面暴露于包含一种或多种二氢化铝氢化物，二乙基氢化铝，甲基二氢铝和式[（C x H y）3-a AlHa] n的烷基铝氢化物的烷基铝前体，其中x具有1至3的值，y 具有2x + 2的值，a具有1至2的值，并且n具有1至4的值; 并将基材表面暴露于含有二甲基乙基胺丙烷，甲基吡咯烷烃，二（甲基吡咯烷）甲烷和三甲基胺丙烷硼烷中的一种或多种的含Alane的前体。其他方法包括将基底表面暴露于金属前体和三甲基胺丙烷硼烷。

3. 发明申请

WO2013148490A1 METHOD OF ENABLING SEAMLESS COBALT GAP-FILL 审中-公开
标题翻译：实现无缝煤覆盖的方法
公开(公告)号：WO2013148490A1
公开(公告)日：2013-10-03
申请号：PCT/US2013/033437
申请日：2013-03-22
申请人： APPLIED MATERIALS, INC. , ZOPE, Bhushan N. , GELATOS, Avgerinos V. , ZHENG, Bo , LEI, Yu , FU, Xinyu , GANDIKOTA, Srinivas , YU, Sang-Ho , ABRAHAM, Mathew
发明人： ZOPE, Bhushan N. , GELATOS, Avgerinos V. , ZHENG, Bo , LEI, Yu , FU, Xinyu , GANDIKOTA, Srinivas , YU, Sang-Ho , ABRAHAM, Mathew
IPC分类号： H01L21/28 , H01L21/31 , H01L21/205 , H01L21/8238
CPC分类号： H01L21/76879 , H01L21/02057 , H01L21/2855 , H01L21/28556 , H01L21/4846 , H01L21/76814 , H01L21/76843 , H01L21/76846 , H01L21/76856 , H01L21/76877 , H01L21/76883 , H01L23/53209 , H01L23/5329 , H01L29/66621
摘要： Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.
摘要翻译：提供了在半导体器件的接触结构中沉积接触金属层的方法。在一个实施例中，提供了一种在半导体器件中沉积用于形成接触结构的接触金属层的方法。该方法包括进行循环金属沉积工艺，以将接触金属层沉积在衬底上并退火设置在衬底上的接触金属层。循环金属沉积工艺包括将衬底暴露于沉积前体气体混合物以将接触金属层的一部分沉积在衬底上，将接触金属层的该部分暴露于等离子体处理工艺，并重复将衬底暴露于沉积前体气体混合物，并将接触金属层的部分暴露于等离子体处理工艺，直到实现接触金属层的预定厚度。

4. 发明申请

WO2013163021A1 METHODS FOR MANUFACTURING METAL GATES 审中-公开
标题翻译：制造金属门的方法
公开(公告)号：WO2013163021A1
公开(公告)日：2013-10-31
申请号：PCT/US2013/037321
申请日：2013-04-19
申请人： APPLIED MATERIALS, INC. , LU, Xinliang , GANGULI, Seshadri , NOORI, Atif , MAHAJANI, Maitreyee , CHEN, Shih Chung , LEI, Yu , FU, Xinyu , TANG, Wei , Gandikota, Srinivas
发明人： LU, Xinliang , GANGULI, Seshadri , NOORI, Atif , MAHAJANI, Maitreyee , CHEN, Shih Chung , LEI, Yu , FU, Xinyu , TANG, Wei , Gandikota, Srinivas
IPC分类号： H01L21/8238 , H01L21/336 , H01L29/78
CPC分类号： H01L29/66477 , H01L21/28088 , H01L21/3221 , H01L21/823821 , H01L21/823842 , H01L29/4966 , H01L29/78
摘要： Provided are methods for making metal gates suitable for FinFET structures. The methods described herein generally involve forming a high-k dielectric material on a semiconductor substrate; depositing a high-k dielectric cap layer over the high-k dielectric material; depositing a PMOS work function layer having a positive work function value; depositing an NMOS work function layer; depositing an NMOS work function cap layer over the NMOS work function layer; removing at least a portion of the PMOS work function layer or at least a portion of the NMOS work function layer; and depositing a fill layer. Depositing a high-k dielectric cap layer, depositing a PMOS work function layer or depositing a NMOS work function cap layer may comprise atomic layer deposition of TiN, TiSiN, or TiAlN. Either PMOS or NMOS may be deposited first.
摘要翻译：提供了适用于FinFET结构的金属栅极的方法。本文描述的方法通常涉及在半导体衬底上形成高k电介质材料; 在高k电介质材料上沉积高k电介质盖层; 沉积具有正功函数值的PMOS功函数层; 沉积NMOS工作功能层; 在NMOS工作功能层上沉积NMOS工作功能覆盖层; 去除所述PMOS功函数层的至少一部分或所述NMOS功函数层的至少一部分; 并沉积填充层。沉积高k电介质盖层，沉积PMOS功函数层或沉积NMOS工作功能覆盖层可包括TiN，TiSiN或TiAlN的原子层沉积。可以首先沉积PMOS或NMOS。

5. 发明申请

WO2013130435A1 ATOMIC LAYER DEPOSITION METHODS FOR METAL GATE ELECTRODES 审中-公开
标题翻译：用于金属栅极电极的原子层沉积方法
公开(公告)号：WO2013130435A1
公开(公告)日：2013-09-06
申请号：PCT/US2013/027748
申请日：2013-02-26
申请人： APPLIED MATERIALS, INC. , LEI, Yu , GANDIKOTA, Srinivas , FU, Xinyu , TANG, Wei , NOORI, Atif
发明人： LEI, Yu , GANDIKOTA, Srinivas , FU, Xinyu , TANG, Wei , NOORI, Atif
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L21/28008 , H01L21/28088 , H01L21/823842 , H01L21/823857 , H01L29/4966 , H01L29/517
摘要： Provided are devices and methods utilizing TiN and/or TaN films doped with Si, Al, Ga, Ge, In and/or Hf. Such films may be used as a high-k dielectric cap layer, PMOS work function layer, aluminum barrier layer, and/or fluorine barrier. These TiSiN, TaSiN, TiAIN, TaAlN, TiGaN, TaGaN, TiGeN, TaGeN, TilnN, TaInN, TiHfN or TaHfN films can be used where TiN and/or TaN films are traditionally used, or they may be used in conjunction with TiN and/or TaN.
摘要翻译：提供了利用掺杂有Si，Al，Ga，Ge，In和/或Hf的TiN和/或TaN膜的器件和方法。这种膜可以用作高k电介质盖层，PMOS功函数层，铝屏障层和/或氟屏障。 TiNN，TaSiN，TiAlN，TiAlN，TiGaN，TaGaN，TiGeN，TaGeN，TilnN，TaInN，TiHfN或TaHfN薄膜可用于传统上使用TiN和/或TaN薄膜，或者它们可以与TiN和/ 或TaN。

6. 发明申请

WO2012064925A2 METHOD FOR SEGREGATING THE ALLOYING ELEMENTS AND REDUCING THE RESIDUE RESISTIVITY OF COPPER ALLOY LAYERS 审中-公开
标题翻译：分离合金元素并降低铜合金层的残余电阻率的方法
公开(公告)号：WO2012064925A2
公开(公告)日：2012-05-18
申请号：PCT/US2011/060115
申请日：2011-11-10
申请人： APPLIED MATERIALS, INC. , FU, Xinyu , YU, Jick M.
发明人： FU, Xinyu , YU, Jick M.
IPC分类号： H01L21/28
CPC分类号： H01L23/53233 , H01L21/76831 , H01L21/76843 , H01L21/76849 , H01L21/76855 , H01L21/76867 , H01L21/76877 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods for forming interconnect or interconnections on a substrate for use in a microelectric device are disclosed. In one or more embodiments, the method includes depositing an alloy layer comprising Cu and an alloying element, for, example, Mn, in a dielectric layer and segregating or diffusing the alloying element from the bulk Cu portion of the alloy layer. In one or more embodiments, the method includes annealing the alloy layer in an atomic hydrogen atmosphere. After annealing, the alloy layer exhibits a resistivity that is substantially equivalent to the resistivity of a pure Cu layer.
摘要翻译：公开了用于在用于微电器件的衬底上形成互连或互连的方法。在一个或多个实施例中，该方法包括在电介质层中沉积包含Cu和合金元素（例如Mn）的合金层，并且将合金元素从合金层的块Cu部分分离或扩散。在一个或多个实施例中，该方法包括在原子氢气氛中对合金层进行退火。退火后，合金层显示的电阻率基本上等于纯Cu层的电阻率。

7. 发明申请

WO2007094961A2 WATER VAPOR PASSIVATION OF A WALL FACING A PLASMA 审中-公开
标题翻译：水汽等离子体的水蒸汽钝化
公开(公告)号：WO2007094961A2
公开(公告)日：2007-08-23
申请号：PCT/US2007/002546
申请日：2007-01-30
申请人： APPLIED MATERIALS, INC. , FU, Xinyu
发明人： FU, Xinyu
CPC分类号： H01L21/76814 , H01L21/02063
摘要： A chamber passivation method particularly useful for hydrogen plasma cleaning of low-k dielectrics prior to coating a barrier layer into a via hole with hydrogen radicals are provided from a remote plasma source (60). For each wafer, the chamber is passivated with water vapor (86) (or other gas even more chemabsorbed on plasma facing walls) passed through the remote plasma source prior to the ignition of the hydrogen plasma. The water vapor is absorbed on walls (78, 79), such as alumina and quartz parts of the remote plasma source, and forms a protective mono-layer that endures sufficiently long to protect the walls during the generation of the hydrogen plasma. Thereby, the plasma facing walls, particularly of a dielectric such as alumina, are protected from etching.
摘要翻译：从远程等离子体源（60）提供在将阻挡层涂覆到具有氢自由基的通孔中之前特别有用于低k电介质的氢等离子体清洗的腔室钝化方法。对于每个晶片，在氢等离子体点燃之前，通过远程等离子体源的水蒸气（86）（或甚至更多化学吸附在等离子体面向墙上的其它气体）钝化室。水蒸汽被吸收在诸如氧化铝和远程等离子体源的石英部分的壁（78,79）上，并且形成足够长的保护单层，以在氢等离子体的产生期间保护壁。因此，保护等离子体面对的壁，特别是电介质如氧化铝，防止蚀刻。

8. 发明申请

WO2011163455A2 PRE-CLEAN CHAMBER WITH REDUCED ION CURRENT 审中-公开
标题翻译：具有降低离子电流的前清洁室
公开(公告)号：WO2011163455A2
公开(公告)日：2011-12-29
申请号：PCT/US2011/041592
申请日：2011-06-23
申请人： APPLIED MATERIALS, INC. , FORSTER, John, C. , HA, Tae Hong , NARASIMHAN, Murali, K. , FU, Xinyu , SUNDARRAJAN, Arvind , GUO, Xiaoxi
发明人： FORSTER, John, C. , HA, Tae Hong , NARASIMHAN, Murali, K. , FU, Xinyu , SUNDARRAJAN, Arvind , GUO, Xiaoxi
IPC分类号： H01L21/3065
CPC分类号： H01J37/321 , H01J37/32357 , H01J37/32422
摘要： Apparatus for processing substrates are disclosed herein. In some embodiments, a substrate processing system may include a process chamber having a first volume to receive a plasma and a second volume for processing a substrate; a substrate support disposed in the second volume; and a plasma filter disposed in the process chamber between the first volume and the second volume such that a plasma formed in the first volume can only flow from the first volume to the second volume through the plasma filter. In some embodiments, the substrate processing system includes a process kit coupled to the process chamber, wherein the plasma filter is disposed in the process kit.
摘要翻译：本文公开了用于处理衬底的装置。在一些实施例中，衬底处理系统可以包括具有接收等离子体的第一体积和用于处理衬底的第二体积的处理室; 设置在所述第二体积中的基板支撑件; 以及设置在第一体积和第二体积之间的处理室中的等离子体过滤器，使得形成在第一体积中的等离子体仅能够通过等离子体过滤器从第一体积流到第二体积。在一些实施例中，衬底处理系统包括耦合到处理室的处理套件，其中等离子体过滤器设置在处理套件中。

9. 发明申请

WO2010048364A2 METHODS FOR REDUCING DAMAGE TO SUBSTRATE LAYERS DURING DEPOSITION PROCESSES 审中-公开
标题翻译：减少沉积过程中基底层损伤的方法
公开(公告)号：WO2010048364A2
公开(公告)日：2010-04-29
申请号：PCT/US2009/061601
申请日：2009-10-22
申请人： APPLIED MATERIALS, INC. , FU, Xinyu , SUNDARRAJAN, Arvind
发明人： FU, Xinyu , SUNDARRAJAN, Arvind
IPC分类号： H01L21/28 , H01L21/203
CPC分类号： H01L21/76873 , H01L21/2855 , H01L21/76846 , H01L23/53238 , H01L2924/0002 , H01L2924/00
摘要： Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate may include providing a substrate to a process chamber comprising a dielectric layer having a feature formed therein. A barrier layer may be formed within the feature. A coating of a first conductive material may be formed atop the barrier layer. A seed layer of the first conductive material may be formed atop the coating. The feature may be filled with a second conductive material. In some embodiments, the seed layer may be formed while maintaining the substrate at a temperature of greater than about 40 degrees Celsius.
摘要翻译：本文提供了处理基板的方法。在一些实施例中，处理衬底的方法可以包括将衬底提供到包括具有在其中形成的特征的电介质层的处理室。特征内可形成阻挡层。第一导电材料的涂层可以形成在阻挡层的顶上。第一导电材料的晶种层可以形成在涂层顶上。该特征可以用第二导电材料填充。在一些实施例中，可以在将衬底保持在大于约40摄氏度的温度的同时形成晶种层。

10. 发明申请

WO2007087067A2 REMOTE PLASMA PRE-CLEAN WITH LOW HYDROGEN PRESSURE 审中-公开
标题翻译：远程等离子预清洗低氢压力
公开(公告)号：WO2007087067A2
公开(公告)日：2007-08-02
申请号：PCT/US2006/049440
申请日：2006-12-28
申请人： APPLIED MATERIALS, INC. , FU, Xinyu , FORSTER, John , YU, Jick , BHATNAGAR, Ajay , GOPALRAJA, Praburam
发明人： FU, Xinyu , FORSTER, John , YU, Jick , BHATNAGAR, Ajay , GOPALRAJA, Praburam
IPC分类号： B08B3/00 , H01L21/302
CPC分类号： H01L21/02063 , G03F7/427 , H01J37/32357 , H01J37/32422 , H01J37/3266 , H01L21/02068 , H01L21/67028 , H01L21/67069 , H01L21/76814
摘要： A plasma cleaning method particularly useful for removing photoresist and oxide residue from a porous low-k dielectric with a high carbon content prior to sputter deposition. A remote plasma source (52) produces a plasma primarily of hydrogen radicals H*. The hydrogen pressure may be kept relatively low, for example, at 30 milliTorr. Optionally, helium may be added to the processing gas with the hydrogen partial pressure held below 150 milliTorr. Superior results are obtained with 70% helium in 400 milliTorr of hydrogen and helium. Preferably, an ion filter, such as a magnetic filter (62, 64), removes hydrogen and other ions from the output of the remote plasma source and a supply tube (54) from the remote plasma source includes a removable dielectric liner (66) in combination with dielectric showerhead (40) and manifold liner (58).
摘要翻译：特别适用于在溅射沉积之前从具有高碳含量的多孔低k电介质去除光刻胶和氧化物残余物的等离子体清洁方法。远程等离子体源（52）产生主要为氢自由基H *的等离子体。氢气压力可以保持相对较低，例如30毫托。任选地，可以将氢气分压保持在150毫托以下，将氦气加入到处理气体中。使用400毫托氢气和氦气中的70％氦气可获得出众的结果。优选地，诸如磁性过滤器（62,64）之类的离子过滤器从远程等离子体源的输出中去除氢和其它离子，并且来自远程等离子体源的供应管（54）包括可移除的电介质衬垫（66）与介电喷头（40）和歧管衬里（58）相结合。

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