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31. 发明申请

US20080155465A1 Identifying items that have experienced recent interest bursts 有权
标题翻译：识别经历最近兴趣爆发的项目
公开(公告)号：US20080155465A1
公开(公告)日：2008-06-26
申请号：US11644848
申请日：2006-12-21
申请人： Yun Fu , Zhichen Xu , Liang-Yu (Tom) Chi
发明人： Yun Fu , Zhichen Xu , Liang-Yu (Tom) Chi
IPC分类号： G06F17/30 , G06F7/08 , G06F3/048
CPC分类号： G06Q10/063 , G06F17/30867
摘要： Techniques are described for identifying items that have recently undergone an interest burst. Items that have recently undergone an interest burst are identified by comparing how many interest-actions have been performed on the items during a current time window against how many interest-actions have been performed on the items historically. Various tests are performed to rule out candidates that are not likely to be of interest to other users. In addition, various spam detection techniques are described for reducing the possibility that the items that are listed as interest burst items are listed because of spam.
摘要翻译：描述了用于识别最近经历了兴趣突发的项目的技术。最近经历了兴趣突破的项目通过比较在当前时间窗口内对项目执行了多少兴趣操作来反映在历史上对项目执行了多少个兴趣操作来识别。执行各种测试以排除不太可能对其他用户感兴趣的候选人。另外，描述了各种垃圾邮件检测技术，用于减少由于垃圾邮件列出列为兴趣突发项目的项目的可能性。

32. 发明申请

US20050076111A1 System and method for relating aborted client accesses of data to quality of service provided by a server in a client-server network 失效
标题翻译：将客户端访问数据与客户端 - 服务器网络中的服务器提供的服务质量相关联的系统和方法
公开(公告)号：US20050076111A1
公开(公告)日：2005-04-07
申请号：US10146988
申请日：2002-05-16
申请人： Ludmila Cherkasova , Yun Fu , Wenting Tang
发明人： Ludmila Cherkasova , Yun Fu , Wenting Tang
IPC分类号： G06F15/16 , G06Q30/00
CPC分类号： G06Q30/00
摘要： A system and method are provided for relating aborted client accesses of server information to the quality of service provided to clients by a server in a client-server network. According to one embodiment, a method comprises determining performance data for at least one aborted client access of information from a server in a client-server network, and using the performance data to determine whether the aborted client access(es) relate to the quality of service provided to a client by the server.
摘要翻译：提供了一种系统和方法，用于将服务器信息的中止客户端访问与由客户端 - 服务器网络中的服务器提供给客户端的服务质量相关联。根据一个实施例，一种方法包括：确定至少一个中止的客户端从客户机 - 服务器网络中的服务器访问信息的性能数据，以及使用所述性能数据来确定被中止的客户端访问是否与由服务器提供给客户端的服务。

33. 发明授权

US06444566B1 Method of making borderless contact having a sion buffer layer 有权
标题翻译：制造无边界接触的方法，具有隔离缓冲层
公开(公告)号：US06444566B1
公开(公告)日：2002-09-03
申请号：US09845481
申请日：2001-04-30
申请人： Ming Huan Tsai , Jyh Huei Chen , Chu Yun Fu , Hun Jan Tao
发明人： Ming Huan Tsai , Jyh Huei Chen , Chu Yun Fu , Hun Jan Tao
IPC分类号： H01L214763
CPC分类号： H01L21/76897 , H01L21/76802 , H01L21/76832 , H01L21/76834
摘要： Borderless contacts are used in integrated circuits in order to conserve chip real estate. As part of the process for manufacturing borderless contacts, an etch-stopping layer of silicon nitride is first laid over the area that is to be contacted. Investigation has now shown that this can lead to damage to the silicon at the edges of the via. The present invention eliminates this damage by introducing a buffer layer between the silicon surface and said sidon nitride layer. Suitable materials for the buffer layer that have been found to be infective include silicon oxide and silicon oxynitride with the latter offering some ditional advantages over the former. Experimental data confirming the effectiveness of the buffer layer are provided, together with a process for its manufacture.
摘要翻译：无边界接触用于集成电路，以节省芯片的不动产。作为制造无边界接触的工艺的一部分，首先将氮化硅的蚀刻停止层铺设在要接触的区域上。现在调查显示，这可能导致在通孔边缘的硅损坏。本发明通过在硅表面和所述侧氮化物层之间引入缓冲层来消除这种损害。已经发现感染的缓冲层的合适材料包括氧化硅和氮氧化硅，后者提供了比前者更多的优点。提供确认缓冲层有效性的实验数据及其制造方法。

34. 发明授权

US06365523B1 Integrated high density plasma chemical vapor deposition (HDP-CVD) method and chemical mechanical polish (CMP) planarizing method for forming patterned planarized aperture fill layers 有权
标题翻译：集成高密度等离子体化学气相沉积（HDP-CVD）方法和用于形成图案化平面化孔径填充层的化学机械抛光（CMP）平面化方法
公开(公告)号：US06365523B1
公开(公告)日：2002-04-02
申请号：US09177188
申请日：1998-10-22
申请人： Syun-Ming Jang , Chu-Yun Fu , Ying-Ho Chen
发明人： Syun-Ming Jang , Chu-Yun Fu , Ying-Ho Chen
IPC分类号： H01L21302
CPC分类号： H01L21/76229 , H01L21/31053 , H01L21/31612
摘要： A method for forming a series of patterned planarized aperture fill layers within a series of apertures within a topographic substrate layer employed within a microelectronics fabrication. There is first provided a topographic substrate layer employed within a microelectronics fabrication, where the topographic substrate layer comprises a series of mesas of substantially equivalent height but of differing widths and the series of mesas is separated by a series of apertures. There is then formed upon the topographic substrate layer a blanket first aperture fill layer. The blanket first aperture fill layer is formed employing a first simultaneous deposition and sputter method. The blanket first aperture fill layer fills the series of apertures to a planarizing thickness at least as high as the height of the mesas while simultaneously forming a series of protrusions of the blanket first aperture fill layer corresponding with the series of mesas, where the thickness of a protrusion of the blanket first aperture fill layer over a narrow mesa is less than the thickness of a protrusion of the blanket first aperture fill layer over a wide mesa. The first simultaneous deposition and sputter method employs a first deposition rate:sputter rate ratio which provides sufficient thickness of the blanket first aperture fill layer over the narrow mesa such that upon chemical mechanical polish (CMP) planarizing the blanket first aperture fill layer to form a series of patterned planarized first aperture fill layers within the series of apertures erosion of the narrow mesa is attenuated. Finally, there is then chemical mechanical polish (CMP) planarized the blanket first aperture fill layer to form the series of patterned planarized first aperture fill layers within the series of apertures.
摘要翻译：一种用于在微电子学制造中使用的地形衬底层内的一系列孔内形成一系列图案化的平坦化孔填充层的方法。首先提供了在微电子制造中使用的地形衬底层，其中地形衬底层包括基本上等同的高度但具有不同宽度的一系列台面，并且一系列台面由一系列孔分隔开。然后在地形衬底层上形成毯子第一孔填充层。毯子第一孔填充层使用第一同时沉积和溅射方法形成。毯子第一孔填充层将一系列孔填充至至少与台面的高度相同的平坦化厚度，同时形成与一系列台面相对应的毯子第一孔填充层的一系列突起，其中厚度毯子第一孔填充层在窄台面上的突起小于宽台面上的第一孔填充层的突起的厚度。第一同时沉积和溅射方法使用第一沉积速率：溅射速率比，其在窄台面上提供足够厚度的第一孔填充层，使得在化学机械抛光（CMP）上平坦化第一孔填充层以形成一系列图案化的平面化的第一孔径填充层在一系列孔径内的狭窄台面的侵蚀被衰减。最后，然后是化学机械抛光（CMP）平坦化第一孔填充层，以在一系列孔内形成一系列图案化的平坦化的第一孔填充层。

35. 发明授权

US08838599B2 Efficient lexical trending topic detection over streams of data using a modified sequitur algorithm 有权
标题翻译：使用修改的Sequitur算法对数据流进行有效的词汇趋势主题检测
公开(公告)号：US08838599B2
公开(公告)日：2014-09-16
申请号：US12780850
申请日：2010-05-14
申请人： Zhichen Xu , Yun Fu , Neal Sample
发明人： Zhichen Xu , Yun Fu , Neal Sample
IPC分类号： G06F17/30
CPC分类号： G06F17/30616
摘要： Embodiments are directed towards a Modified Sequitur algorithm (MSA) using pipelining and indexed arrays to identify trending topics within a plurality of documents having user generated content (UGC). The documents are parallelized and distributed across a plurality of network devices, which place at least some of the received documents into a buffer for which the MSA may then be applied to the documents within the buffer to identify n-grams or phrases within the documents' contents. The identified phrases are further analyzed to remove extraneous co-occurrences of phrases, and/or words based on a part of speech analysis. A weighting of the remaining phrases is used to identify trending topic phrases. Links to content in the plurality of UGC documents that is associated with the trending topic phrases may then be displayed to a client device.
摘要翻译：实施例针对使用流水线和索引数组来修改具有用户生成内容（UGC）的多个文档内的趋势主题的修改的序列算法（MSA）。这些文档被并行化并且分布在多个网络设备上，这些网络设备将至少一些接收到的文档放置在缓冲器中，然后可以将MSA应用于缓冲器中的文档，以识别文档中的n个或多个短语，内容。进一步分析识别的短语，以消除基于词性分析的短语和/或单词的无关共存。使用剩余短语的加权来识别趋势主题短语。然后可以将与趋势主题短语相关联的多个UGC文档中的内容的链接显示给客户端设备。

36. 发明授权

US08822293B2 Self-aligned halo/pocket implantation for reducing leakage and source/drain resistance in MOS devices 有权
标题翻译：自对准晕圈/凹穴注入，用于减少MOS器件中的漏电和源极/漏极电阻
公开(公告)号：US08822293B2
公开(公告)日：2014-09-02
申请号：US12048119
申请日：2008-03-13
申请人： Chen-Hua Yu , Yihang Chiu , Shu-Tine Yang , Jyh-Cherng Sheu , Chu-Yun Fu , Cheng-Tung Lin
发明人： Chen-Hua Yu , Yihang Chiu , Shu-Tine Yang , Jyh-Cherng Sheu , Chu-Yun Fu , Cheng-Tung Lin
IPC分类号： H01L21/336 , H01L29/78 , H01L21/265 , H01L29/66 , H01L29/165
CPC分类号： H01L29/7848 , H01L21/26586 , H01L29/165 , H01L29/66537 , H01L29/6659 , H01L29/7833
摘要： A method of forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate, wherein the semiconductor substrate and a sidewall of the gate dielectric has a joint point; forming a gate electrode over the gate dielectric; forming a mask layer over the semiconductor substrate and the gate electrode, wherein a first portion of the mask layer adjacent the joint point is at least thinner than a second portion of the mask layer away from the joint point; after the step of forming the mask layer, performing a halo/pocket implantation to introduce a halo/pocket impurity into the semiconductor substrate; and removing the mask layer after the halo/pocket implantation.
摘要翻译：一种形成半导体结构的方法包括：提供半导体衬底; 在所述半导体衬底上形成栅极电介质，其中所述半导体衬底和所述栅极电介质的侧壁具有接合点; 在所述栅极电介质上形成栅电极; 在所述半导体衬底和所述栅极电极上形成掩模层，其中所述掩模层的与所述接合点相邻的第一部分至少比所述掩模层的离开所述接合点的第二部分更薄; 在形成掩模层的步骤之后，进行晕/穴注入以将卤素/杂质杂质引入到半导体衬底中; 并且在光晕/口袋植入之后去除掩模层。

37. 发明授权

US08809008B2 Biomarkers for impaired glucose tolerance and methods using the same 有权
标题翻译：葡萄糖耐量异常的生物标志物及使用其的方法
公开(公告)号：US08809008B2
公开(公告)日：2014-08-19
申请号：US13966475
申请日：2013-08-14
申请人： Yun Fu Hu , Costel Chirila , Danny Alexander , Michael Milburn , Matthew W. Mitchell , Walter Gall , Kay A. Lawton
发明人： Yun Fu Hu , Costel Chirila , Danny Alexander , Michael Milburn , Matthew W. Mitchell , Walter Gall , Kay A. Lawton
IPC分类号： C12Q1/54
CPC分类号： G01N33/5308 , G01N33/483 , G01N33/487 , G01N33/5091 , G01N33/6893 , G01N2800/04 , G01N2800/042 , G01N2800/044 , G01N2800/32 , G01N2800/50 , G01N2800/52 , G01N2800/56
摘要： Biomarkers relating to insulin resistance, pre-diabetes, type-2 diabetes, metabolic syndrome, atherosclerosis, and cardiomyopathy are provided, as well as methods for using such biomarkers as biomarkers for insulin resistance, pre-diabetes, type-2 diabetes, metabolic syndrome, atherosclerosis, and cardiomyopathy. In addition, methods for modulating the respective disorders or conditions of a subject are also provided. Also provided are suites of small molecule entities as biomarkers for insulin resistance, pre-diabetes, type-2 diabetes, metabolic syndrome, atherosclerosis, and cardiomyopathy.
摘要翻译：提供了与胰岛素抵抗，前期糖尿病，2型糖尿病，代谢综合征，动脉粥样硬化和心肌病有关的生物标志物，以及使用这样的生物标志物作为胰岛素抵抗，前期糖尿病，2型糖尿病，代谢综合征的生物标志物的方法，动脉粥样硬化和心肌病。此外，还提供了用于调节受试者的各种病症或病症的方法。还提供了小分子实体作为胰岛素抵抗，糖尿病前期，2型糖尿病，代谢综合征，动脉粥样硬化和心肌病的生物标志物的套件。

38. 发明授权

US08580653B2 Method for fabricating an isolation structure 有权
标题翻译：隔离结构的制造方法
公开(公告)号：US08580653B2
公开(公告)日：2013-11-12
申请号：US13775907
申请日：2013-02-25
申请人： Tze-Liang Lee , Pei-Ren Jeng , Chu-Yun Fu , Chyi Shyuan Chern , Jui-Hei Huang , Chih-Tang Peng , Hao-Ming Lien
发明人： Tze-Liang Lee , Pei-Ren Jeng , Chu-Yun Fu , Chyi Shyuan Chern , Jui-Hei Huang , Chih-Tang Peng , Hao-Ming Lien
IPC分类号： H01L21/76
CPC分类号： H01L21/76224 , H01L21/76232
摘要： A method of fabricating an isolation structure including forming a trench in a top surface of a substrate and partially filling the trench with a first oxide, wherein the first oxide is a pure oxide. Partially filling the trench includes forming a liner layer in the trench and forming the first oxide over the liner layer using silane and oxygen precursors at a pressure less than 10 milliTorr (mTorr) and a temperature ranging from about 500° C. to about 1000° C. The method further includes producing a solid reaction product in a top portion of the first oxide. The method further includes sublimating the solid reaction product by heating the substrate in a chamber at a temperature from 100° C. to 200° C. and removing the sublimated solid reaction product by flowing a carrier gas over the substrate. The method further includes filling the trench with a second oxide.
摘要翻译：一种制造隔离结构的方法，包括在衬底的顶表面中形成沟槽并用第一氧化物部分地填充沟槽，其中第一氧化物是纯氧化物。部分地填充沟槽包括在沟槽中形成衬层，并且在低于10毫托（mTorr）的压力和约500℃至约1000℃的温度下使用硅烷和氧前体在衬层上形成第一氧化物该方法还包括在第一氧化物的顶部产生固体反应产物。该方法还包括通过在室内在100℃至200℃的温度下加热基底来升华固体反应产物，并通过使载气流过基底而除去升华的固体反应产物。该方法还包括用第二氧化物填充沟槽。

39. 发明授权

US08440517B2 FinFET and method of fabricating the same 有权
标题翻译： FinFET及其制造方法
公开(公告)号：US08440517B2
公开(公告)日：2013-05-14
申请号：US12903712
申请日：2010-10-13
申请人： Hung-Ta Lin , Chu-Yun Fu , Shin-Yeh Huang , Shu-Tine Yang , Hung-Ming Chen
发明人： Hung-Ta Lin , Chu-Yun Fu , Shin-Yeh Huang , Shu-Tine Yang , Hung-Ming Chen
IPC分类号： H01L21/02
CPC分类号： H01L27/0886 , H01L21/02293 , H01L29/165 , H01L29/66636 , H01L29/66795 , H01L29/7842 , H01L29/7848 , H01L29/785 , H01L29/7855
摘要： The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a top surface; a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces; a fin of the substrate extending above the substrate top surface between the first and second insulation regions, wherein the fin comprises a recessed portion having a top surface lower than the tapered top surfaces of the first and second insulation regions, wherein the fin comprises a non-recessed portion having a top surface higher than the tapered top surfaces; and a gate stack over the non-recessed portion of the fin.
摘要翻译：本发明涉及鳍状场效应晶体管（FinFET）。 FinFET的示例性结构包括：包括顶表面的衬底; 第一绝缘区域和位于衬底顶表面上的第二绝缘区域，包括锥形顶表面; 在所述第一和第二绝缘区域之间延伸到所述衬底顶表面之上的所述衬底的翅片，其中所述鳍片包括具有比所述第一和第二绝缘区域的锥形顶表面低的顶表面的凹陷部分，其中所述鳍片包括非加工部分具有高于锥形顶表面的顶表面; 以及在翅片的非凹陷部分上方的栅极堆叠。

40. 发明申请

US20120208215A1 Biomarkers for Pre-Diabetes, Cardiovascular Diseases, and Other Metabolic-Syndrome Related Disorders and Methods Using the Same 有权
标题翻译：糖尿病，心血管疾病和其他代谢综合征相关疾病的生物标志物及其使用方法
公开(公告)号：US20120208215A1
公开(公告)日：2012-08-16
申请号：US13457620
申请日：2012-04-27
申请人： Yun Fu HU , Costel CHIRILA , Danny ALEXANDER , Michael MILBURN , Matthew W. MITCHELL , Walter GALL , Kay A. LAWTON
发明人： Yun Fu HU , Costel CHIRILA , Danny ALEXANDER , Michael MILBURN , Matthew W. MITCHELL , Walter GALL , Kay A. LAWTON
IPC分类号： G01N33/66 , G01N33/74
CPC分类号： G01N33/5308 , G01N33/483 , G01N33/487 , G01N33/5091 , G01N33/6893 , G01N2800/04 , G01N2800/042 , G01N2800/044 , G01N2800/32 , G01N2800/50 , G01N2800/52 , G01N2800/56
摘要： Biomarkers relating to insulin resistance, pre-diabetes, type-2 diabetes, metabolic syndrome, atherosclerosis, and cardiomyopathy are provided, as well as methods for using such biomarkers as biomarkers for insulin resistance, pre-diabetes, type-2 diabetes, metabolic syndrome, atherosclerosis, and cardiomyopathy. In addition, methods for modulating the respective disorders or conditions of a subject are also provided. Also provided are suites of small molecule entities as biomarkers for insulin resistance, pre-diabetes, type-2 diabetes, metabolic syndrome, atherosclerosis, and cardiomyopathy.
摘要翻译：提供了与胰岛素抵抗，前期糖尿病，2型糖尿病，代谢综合征，动脉粥样硬化和心肌病有关的生物标志物，以及使用这样的生物标志物作为胰岛素抵抗，前期糖尿病，2型糖尿病，代谢综合征的生物标志物的方法，动脉粥样硬化和心肌病。此外，还提供了用于调节受试者的各种病症或病症的方法。还提供了小分子实体作为胰岛素抵抗，糖尿病前期，2型糖尿病，代谢综合征，动脉粥样硬化和心肌病的生物标志物的套件。

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