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31. 发明授权

US07557000B2 Etching method and structure using a hard mask for strained silicon MOS transistors 有权
标题翻译：用于应变硅MOS晶体管的硬掩模的蚀刻方法和结构
公开(公告)号：US07557000B2
公开(公告)日：2009-07-07
申请号：US11609748
申请日：2006-12-12
申请人： John Chen , Hanming Wu , Da Wei Gao , Bei Zhu , Paolo Bonfanti
发明人： John Chen , Hanming Wu , Da Wei Gao , Bei Zhu , Paolo Bonfanti
IPC分类号： H01L21/8238
CPC分类号： H01L29/7848 , H01L29/165 , H01L29/66628 , H01L29/66636 , Y10S438/938
摘要： A method for forming an strained silicon integrated circuit device. The method includes providing a semiconductor substrate and forming a dielectric layer overlying the semiconductor substrate. The method also includes forming a gate layer overlying the dielectric layer and forming a hard mask overlying the gate layer. The method patterns the gate layer to form a gate structure including edges using the hard mask as a protective layer. The method forms a dielectric layer overlying the gate structure to protect the gate structure including the edges. The method forms spacers from the dielectric layer, while maintaining the hard mask overlying the gate structure. The method etches a source region and a drain region adjacent to the gate structure using the dielectric layer and the hard mask as a protective layer, while the hard mask prevents any portion of the gate structure from being exposed. In a preferred embodiment, the method maintains the hard mask overlying the gate structure. The method includes depositing silicon germanium material into the source region and the drain region to fill the etched source region and the etched drain region, while maintaining any portion of the gate layer from being exposed using the hard mask such that the gate structure is substantially free from any permanent deposition of silicon germanium material, which causes a channel region between the source region and the drain region to be strained in compressive mode from at least the silicon germanium material formed in the source region and the drain region. In a preferred embodiment, the method removing the hard mask from the gate structure to expose a top portion of the gate structure and maintains the top portion of the gate structure being substantially free from any silicon germanium material.
摘要翻译：一种形成应变硅集成电路器件的方法。该方法包括提供半导体衬底并形成覆盖半导体衬底的电介质层。该方法还包括形成覆盖在电介质层上的栅极层，并形成覆盖栅极层的硬掩模。该方法使栅极层形成包括使用硬掩模的边缘作为保护层的栅极结构。该方法形成覆盖栅极结构的电介质层，以保护包括边缘的栅极结构。该方法从电介质层形成间隔物，同时保持覆盖栅极结构的硬掩模。该方法使用电介质层和硬掩模作为保护层来蚀刻与栅极结构相邻的源极区域和漏极区域，同时硬掩模防止栅极结构的任何部分暴露。在优选实施例中，该方法保持覆盖栅极结构的硬掩模。该方法包括将硅锗材料沉积到源极区域和漏极区域中以填充蚀刻的源极区域和蚀刻的漏极区域，同时保持栅极层的任何部分不被使用硬掩模曝光，使得栅极结构基本上是空的来自硅锗材料的任何永久性沉积，其使得源极区域和漏极区域之间的沟道区域至少在形成于源极区域和漏极区域中的硅锗材料以压缩模式应变。在优选实施例中，该方法从栅极结构去除硬掩模以露出栅极结构的顶部并且保持栅极结构的顶部基本上不含任何硅锗材料。

32. 发明申请

US20090091033A1 Fabrication of metal oxide films 审中-公开
标题翻译：金属氧化物膜的制造
公开(公告)号：US20090091033A1
公开(公告)日：2009-04-09
申请号：US11921146
申请日：2006-05-16
申请人： Wei Gao , Zheng-wei Li
发明人： Wei Gao , Zheng-wei Li
IPC分类号： H01L23/532 , H01L21/70
CPC分类号： C23C14/086 , C23C14/0036 , C23C14/5853
摘要： A process of fabricating a metal oxide film includes depositing a multiphase, metal-based precursor film comprising the metal and an oxide of the metal on a substrate. The process further includes thermally growing a metal oxide film from the precursor film in a humid atmosphere for a predetermined period of time and at a predetermined temperature.
摘要翻译：制造金属氧化物膜的方法包括在基板上沉积包含金属的金属和金属氧化物的多相金属基前体膜。该方法还包括在潮湿气氛中预定时间和在预定温度下从前体膜热生长金属氧化物膜。

33. 发明授权

US07502127B2 Sensor device and stage device 有权
标题翻译：传感器装置和舞台装置
公开(公告)号：US07502127B2
公开(公告)日：2009-03-10
申请号：US11588271
申请日：2006-10-27
申请人： Wei Gao , Satoshi Kiyono , Yoshiyuki Tomita , Toru Hirata , Yoji Watanabe , Kennichi Makino
发明人： Wei Gao , Satoshi Kiyono , Yoshiyuki Tomita , Toru Hirata , Yoji Watanabe , Kennichi Makino
IPC分类号： G01B11/14 , G01B11/02 , G01B11/26 , G01C1/00 , G01D5/36 , G01N21/86 , G01V8/00
CPC分类号： G03F7/70758 , G01D5/28 , G01D5/38 , G03F7/70775
摘要： According to one aspect of the invention, there is provided a sensor device which is capable of detecting a state of a movable stage using an easily manufacturable reference grating and capable of improving the accuracy of detection. The sensor device comprises a reference grating which has a configuration that is varied periodically in a two-dimensional direction. A light source emits light to the reference grating. A spectral unit has a plurality of openings to convert the light emitted by the light source into a plurality of light beams through the plurality of openings. A detector unit has a photodetector to receive collectively reflected light beams reflected by the reference grating. The detector unit is provided to detect a state of a movable body relative to the reference grating based on a change of the reflected light beams received by the photodetector.
摘要翻译：根据本发明的一个方面，提供了一种传感器装置，其能够使用易于制造的参考光栅来检测可移动台的状态，并且能够提高检测精度。传感器装置包括具有沿二维方向周期性变化的构造的参考光栅。光源向参考光栅发射光。光谱单元具有多个开口，用于将由光源发射的光转换成通过多个开口的多个光束。检测器单元具有用于接收由参考光栅反射的共同反射的光束的光电检测器。检测器单元被设置为基于由光电检测器接收的反射光束的变化来检测可移动体相对于参考光栅的状态。

34. 发明申请

US20080029860A1 SEMICONDUCTOR DEVICE WITH INTERNAL HEAT SINK 审中-公开
标题翻译：具有内部散热的半导体器件
公开(公告)号：US20080029860A1
公开(公告)日：2008-02-07
申请号：US11829084
申请日：2007-07-27
申请人： Wei GAO
发明人： Wei GAO
IPC分类号： H01L23/495
CPC分类号： H01L23/4334 , H01L23/3107 , H01L23/49575 , H01L24/45 , H01L24/48 , H01L24/49 , H01L2224/32245 , H01L2224/45015 , H01L2224/45124 , H01L2224/45144 , H01L2224/45147 , H01L2224/4554 , H01L2224/4569 , H01L2224/48091 , H01L2224/4813 , H01L2224/48247 , H01L2224/48465 , H01L2224/4911 , H01L2224/73265 , H01L2924/01013 , H01L2924/01014 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/14 , H01L2924/181 , H01L2924/18301 , H01L2924/20752 , H01L2924/20753 , H01L2924/20754 , H01L2924/20755 , H01L2924/00014 , H01L2924/00 , H01L2924/00012
摘要： A single gauge lead frame for a semiconductor device includes a central die pad surrounded by lead fingers. A heat spreader is attached to a top surface of the die pad. The die pad and the lead fingers have the same thickness. A semiconductor integrated circuit is attached to the heat spreader. After encapsulation, a bottom surface of the heat spreader and the lead fingers is exposed.
摘要翻译：用于半导体器件的单规格引线框架包括由引线指围绕的中心管芯焊盘。散热器附接到管芯焊盘的顶表面。芯片焊盘和引线指具有相同的厚度。半导体集成电路附着在散热器上。封装后，散热器的底面和引线指露出。

35. 发明授权

US07257902B2 Stage device 失效
标题翻译：舞台装置
公开(公告)号：US07257902B2
公开(公告)日：2007-08-21
申请号：US11522400
申请日：2006-09-18
申请人： Wei Gao , Satoshi Kiyono , Yoshiyuki Tomita , Makoto Tano
发明人： Wei Gao , Satoshi Kiyono , Yoshiyuki Tomita , Makoto Tano
IPC分类号： G01D21/00
CPC分类号： G03F7/70775 , G03F7/70716
摘要： This invention relates to a stage device which is moved with high accuracy in an X-Y direction and a rotating direction using a planar motor. The invention is aimed at reducing the size of the stage device and at performing accurately measurement of a position of the stage to the base. The stage device comprises a scale unit having a scale part on the entire plane of the base, and three two-dimensional angle sensors disposed on a bottom surface of a movable stage part. The scale unit and the two-dimensional angle sensors form a surface encode. A position of the movable stage part is measured by the surface encoder.
摘要翻译：本发明涉及一种使用平面电机在X-Y方向和旋转方向上高精度地移动的平台装置。本发明的目的在于减小舞台装置的尺寸并且准确地测量舞台到底座的位置。舞台装置包括在基座的整个平面上具有刻度部分的刻度单元，以及设置在可移动台部的底面上的三个二维角度传感器。刻度单元和二维角度传感器形成表面编码。可动平台部分的位置由表面编码器测量。

36. 发明申请

US20070105518A1 Ultra wideband and fast hopping frequency synthesizer for MB-OFDM wireless application 有权
标题翻译：用于MB-OFDM无线应用的超宽带和快速跳频合成器
公开(公告)号：US20070105518A1
公开(公告)日：2007-05-10
申请号：US11377735
申请日：2006-03-16
申请人： Ronald Chang , Sheng Yen , Wei Gao
发明人： Ronald Chang , Sheng Yen , Wei Gao
IPC分类号： H04B7/00
CPC分类号： H03L7/16 , H03B21/02 , H04B1/7136
摘要： A frequency synthesizer with a single PLL and multiple SSB mixers is presented. The frequency synthesizer includes a single PLL outputting a reference signal that is fed to a plurality of dividers coupled in sequence. The outputs from the dividers are mixed by the SSB mixers to produce signals with different frequencies. These signals with different frequencies can be selected through use of multiple selectors.
摘要翻译：提出了具有单个PLL和多个SSB混频器的频率合成器。频率合成器包括单个PLL，其输出被馈送到依次耦合的多个分频器的参考信号。分频器的输出由SSB混频器混合，产生不同频率的信号。可以通过使用多个选择器来选择具有不同频率的这些信号。

37. 发明申请

US20060195657A1 Expandable RAID method and device 审中-公开
标题翻译：可扩展的RAID方法和设备
公开(公告)号：US20060195657A1
公开(公告)日：2006-08-31
申请号：US11068296
申请日：2005-02-28
申请人： Paul Tien , Wei Gao , Zhiqiang Zeng , Alex Win , Yasuaki Hagiwara
发明人： Paul Tien , Wei Gao , Zhiqiang Zeng , Alex Win , Yasuaki Hagiwara
IPC分类号： G06F12/16
CPC分类号： G06F11/1096
摘要： The present invention relates to RAID arrays with one or more dedicated parity disks. In particular, it relates to expandable RAID arrays. An expansion disk can be added to a RAID array without the need of redistributing striped data among disks.
摘要翻译：本发明涉及具有一个或多个专用奇偶校验磁盘的RAID阵列。特别地，它涉及可扩展RAID阵列。扩展磁盘可以添加到RAID阵列，而不需要在磁盘之间重新分配条带化数据。

38. 发明授权

US07087526B1 Method of fabricating a p-type CaO-doped SrCu2O2 thin film 有权
标题翻译：制造p型CaO掺杂SrCu2O2薄膜的方法
公开(公告)号：US07087526B1
公开(公告)日：2006-08-08
申请号：US11261020
申请日：2005-10-27
申请人： Wei-Wei Zhuang , Wei Gao , Yoshi Ono
发明人： Wei-Wei Zhuang , Wei Gao , Yoshi Ono
IPC分类号： H01L23/02
CPC分类号： C23C26/00
摘要： A method of CaO-doped SrCu2O2 spin-on precursor synthesis and low temperature p-type thin film deposition, includes preparing a wafer to receive a spin-coating thereon; selecting metalorganic compounds to form a SrCu2O2 precursor, mixing and refluxing the metalorganic compounds to form a precursor mixture; filtering the precursor mixture to produce a spin-coating precursor; applying the spin-coating precursor to the wafer in a two-step spin coating procedure; baking the spin-coated wafer using a hot-plate bake to evaporate substantially all of the solvents; and annealing the spin-coated wafer to form a CaO-doped SrCu2O2 layer thereon.
摘要翻译：掺有CaO的SrCu 2 O 2 O 2旋涂前体合成和低温p型薄膜沉积的方法包括制备晶片以在其上接受旋涂法 ; 选择金属有机化合物以形成SrCu 2 O 2 O 2前体，将金属有机化合物混合并回流以形成前体混合物; 过滤前体混合物以产生旋涂前体; 以两步旋涂方法将旋涂前驱体施加到晶片上; 使用热板烘烤烘烤旋涂的晶片以基本上蒸发所有溶剂; 以及对旋涂的晶片退火以在其上形成掺杂CaO的SrCu 2 O 2 O 2层。

39. 发明授权

US06873048B2 System and method for integrating multiple metal gates for CMOS applications 失效
标题翻译：用于集成多个金属栅极用于CMOS应用的系统和方法
公开(公告)号：US06873048B2
公开(公告)日：2005-03-29
申请号：US10376795
申请日：2003-02-27
申请人： Wei Gao , John F. Conley, Jr. , Yoshi Ono
发明人： Wei Gao , John F. Conley, Jr. , Yoshi Ono
IPC分类号： H01L21/28 , H01L21/336 , H01L21/8238 , H01L27/092 , H01L29/423 , H01L29/49 , H01L29/78 , H01L23/48
CPC分类号： H01L29/66583 , H01L21/823842 , H01L29/495 , H01L29/4958 , H01L29/4966 , H01L29/78 , H01L2924/0002 , H01L2924/00
摘要： A dual-gate MOSFET with metal gates and a method for setting threshold voltage in such a MOSFET is provided. The method comprises: forming a gate oxide layer overlying first and second channel regions; forming a first metal layer having a first thickness overlying the gate oxide layer; forming a second metal layer having a second thickness overlying the first metal layer first thickness; selectively removing the second metal layer overlying the first channel region; forming a third metal layer; establishing a first MOSFET with a gate work function responsive to the thicknesses of the first and third metal layer overlying the first channel region; and, establishing a second MOSFET, complementary to the first MOSFET, with a gate work function responsive to the combination of the thicknesses of the first, second, and third metal layers overlying the second channel region.
摘要翻译：提供了具有金属栅极的双栅极MOSFET和用于设置这种MOSFET中的阈值电压的方法。该方法包括：形成覆盖第一和第二沟道区的栅极氧化层; 形成具有覆盖所述栅极氧化物层的第一厚度的第一金属层; 形成具有覆盖所述第一金属层第一厚度的第二厚度的第二金属层; 选择性地去除覆盖在第一沟道区上的第二金属层; 形成第三金属层; 建立具有响应于覆盖在第一沟道区上的第一和第三金属层的厚度的栅极功函数的第一MOSFET; 以及响应于覆盖在第二沟道区上的第一，第二和第三金属层的厚度的组合，建立与第一MOSFET互补的第二MOSFET。

40. 发明授权

US06870866B2 Powerpack laser diode assemblies 失效
标题翻译： Powerpack激光二极管组件
公开(公告)号：US06870866B2
公开(公告)日：2005-03-22
申请号：US09874501
申请日：2001-06-05
申请人： Wei Gao
发明人： Wei Gao
IPC分类号： H01S5/024 , H01S5/02 , H01S5/022 , H01S5/042 , H01S3/04
CPC分类号： H01S5/02276 , H01L2224/48091 , H01L2224/48227 , H01L2924/01025 , H01L2924/01078 , H01L2924/01079 , H01S5/02415 , H01S5/02476 , H01S5/0425 , H01S5/22 , H01L2924/00014
摘要： In one aspect, the invention provides a laser diode assembly, comprising a carrier, a laser diode, a first bonding member, and a second bonding member. The carrier has a conductive layer formed thereon that is sized for attaching at least two bonding members thereto. The laser diode is operably coupled to the carrier and has first and second conductive pads formed thereon. The first and second conductive pads are each sized for attaching at least one bonding member thereto. The first bonding member couples the first conductive pad to the conductive layer of the carrier, and the second bonding member couples the second conductive pad to the conductive layer of the carrier.
摘要翻译：一方面，本发明提供了一种激光二极管组件，其包括载体，激光二极管，第一接合构件和第二接合构件。载体具有形成在其上的导电层，其尺寸用于将至少两个结合构件附接到其上。激光二极管可操作地耦合到载体并且具有形成在其上的第一和第二导电焊盘。第一和第二导电焊盘的尺寸被设计成用于将至少一个焊接部件附接到其上。第一接合部件将第一导电焊盘耦合到载体的导电层，并且第二接合部件将第二导电焊盘耦合到载体的导电层。

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