会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 2. 发明授权
    • Reactive gate electrode conductive barrier
    • 无源栅电极导电屏障
    • US07473640B2
    • 2009-01-06
    • US10784662
    • 2004-02-23
    • John F. Conley, Jr.Yoshi OnoWei Gao
    • John F. Conley, Jr.Yoshi OnoWei Gao
    • H01L29/72
    • H01L21/28079H01L21/823842H01L29/4958
    • A method, and corresponding transistor structure are provided for protecting the gate electrode from an underlying gate insulator. The method comprises: forming a gate insulator overlying a channel region; forming a first metal barrier overlying the gate insulator, having a thickness of less than 5 nanometers (nm); forming a second metal gate electrode overlying the first metal barrier, having a thickness of greater than 10 nm; and, establishing a gate electrode work function exclusively responsive to the second metal. The second metal gate electrode can be one of the following materials: elementary metals such as p+ poly, n+ poly. Ta, W, Re, RuO2, Pt, Ti, Hf, Zr, Cu, V, Ir, Ni, Mn, Co, NbO, Pd, Mo, TaSiN, and Nb, and binary metals such as WN, TaN, and TiN. The first metal barrier can be a binary metal, such as TaN, TiN, or WN.
    • 提供了一种方法和相应的晶体管结构,用于保护栅极免受下层栅极绝缘体的影响。 该方法包括:形成覆盖沟道区的栅极绝缘体; 形成覆盖栅极绝缘体的厚度小于5纳米(nm)的第一金属屏障; 形成覆盖所述第一金属屏障的第二金属栅电极,其厚度大于10nm; 并且建立专门响应于第二金属的栅电极功函数。 第二金属栅电极可以是以下材料之一:元素金属,例如p + poly,n + poly。 Ta,W,Re,RuO 2,Pt,Ti,Hf,Zr,Cu,V,Ir,Ni,Mn,Co,NbO,Pd,Mo,TaSiN和Nb,二元金属如WN,TaN和TiN 。 第一金属屏障可以是二元金属,例如TaN,TiN或WN。
    • 3. 发明授权
    • Methods of forming a microlens array over a substrate employing a CMP stop
    • 在使用CMP停止的衬底上形成微透镜阵列的方法
    • US07029944B1
    • 2006-04-18
    • US10956789
    • 2004-09-30
    • John F. Conley, Jr.Yoshi OnoWei GaoDavid R. Evans
    • John F. Conley, Jr.Yoshi OnoWei GaoDavid R. Evans
    • H01L21/00
    • H01L21/31053H01L21/31133H01L27/14627H01L27/14685
    • A method of forming a microlens structure is provided along with a CCD array structure employing a microlens array. An embodiment of the method comprises providing a substrate having a surface with photo-elements on the surface; depositing a transparent material overlying the surface of the substrate; depositing a CMP stop overlying the transparent material; depositing a lens-shaping layer overlying the CMP stop layer; depositing and patterning a photoresist layer overlying the lens-shaping layer to form openings to expose the lens-shaping layer; introducing a first isotropic etchant into the openings and etching the lens-shaping layer where exposed to form initial lens shapes having a radius; stripping the photoresist; exposing the lens-shaping layer to a second isotropic etchant to increase the radius of the lens shapes; transferring the lens shape through the CMP stop layer into the transparent material using an anisotropic etch; and depositing a lens material overlying the transparent material, whereby the lens shapes are at least partially filled with lens material. Planarizing the lens material using CMP and stopping at the CMP stop layer.
    • 提供一种形成微透镜结构的方法以及采用微透镜阵列的CCD阵列结构。 该方法的一个实施例包括提供具有在表面上具有光元件的表面的基底; 沉积覆盖衬底表面的透明材料; 沉积覆盖透明材料的CMP停止点; 沉积覆盖CMP停止层的透镜成形层; 沉积和图案化覆盖透镜成形层的光致抗蚀剂层以形成露出透镜成形层的开口; 在开口中引入第一各向同性蚀刻剂并蚀刻暴露于其中形成具有半径的初始透镜形状的透镜成形层; 剥离光刻胶; 将透镜成形层暴露于第二各向同性蚀刻剂以增加透镜形状的半径; 使用各向异性蚀刻将透镜形状通过CMP停止层转移到透明材料中; 以及沉积覆盖透明材料的透镜材料,由此透镜形状至少部分地被透镜材料填充。 使用CMP对透镜材料进行平面化,并在CMP停止层处停止。
    • 4. 发明授权
    • Electroluminescent device
    • 电致发光器件
    • US07208768B2
    • 2007-04-24
    • US10836669
    • 2004-04-30
    • Yoshi OnoWei GaoJohn F. Conley, Jr.Osamu NishioKeizo Sakiyama
    • Yoshi OnoWei GaoJohn F. Conley, Jr.Osamu NishioKeizo Sakiyama
    • H01L27/15
    • H01L33/28H01L33/18H01L33/34Y10S977/95
    • A method is provided for forming an electroluminescent device. The method comprises: providing a type IV semiconductor material substrate; forming a p+/n+ junction in the substrate, typically a plurality of interleaved p+/n+ junctions are formed; and, forming an electroluminescent layer overlying the p+/n+ junction(s) in the substrate. The type IV semiconductor material substrate can be Si, C, Ge, SiGe, or SiC. For example, the substrate can be Si on insulator (SOI), bulk Si, Si on glass, or Si on plastic. The electroluminescent layer can be a material such as nanocrystalline Si, nanocrystalline Ge, fluorescent polymers, or type II–VI materials such as ZnO, ZnS, ZnSe, CdSe, and CdS. In some aspect, the method further comprises forming an insulator film interposed between the substrate and the electroluminescent layer. In another aspect, the method comprises forming a conductive electrode overlying the electroluminescent layer.
    • 提供了形成电致发光器件的方法。 该方法包括:提供IV型半导体材料基板; 在衬底中形成p + / n +结,通常形成多个交错的p + / n +结; 并且形成覆盖衬底中的p + / n +结的电致发光层。 IV型半导体材料基板可以是Si,C,Ge,SiGe或SiC。 例如,衬底可以是绝缘体上的硅(SOI),玻璃上的体积Si,Si或塑料上的Si。 电致发光层可以是诸如纳米晶体Si,纳米晶体Ge,荧光聚合物或诸如ZnO,ZnS,ZnSe,CdSe和CdS的II-VI族材料的材料。 在一些方面,所述方法还包括形成介于基片和电致发光层之间的绝缘膜。 另一方面,该方法包括形成覆盖电致发光层的导电电极。
    • 5. 发明授权
    • Nanotip electrode electroluminescence device with contoured phosphor layer
    • 具有成像荧光粉层的纳米技术电极电致发光器件
    • US07589464B2
    • 2009-09-15
    • US11070051
    • 2005-03-01
    • John F. Conley, Jr.David R. EvansWei GaoYoshi Ono
    • John F. Conley, Jr.David R. EvansWei GaoYoshi Ono
    • H05B33/26
    • H05B33/10B82Y20/00C09K11/54C09K11/642H01L33/18H05B33/14
    • A device and a fabrication method are provided for an EL device with a nanotip-contoured phosphor layer. The method comprises: forming a bottom electrode with nanotips; forming a phosphor layer overlying the bottom electrode, having irregularly-shaped top and bottom surfaces; and, forming a top electrode overlying the phosphor layer. The bottom electrode top surface has a nanotip contour, and the phosphor layer irregularly-shaped top and bottom surfaces have contours approximately matching the bottom electrode top surface nanotip contour. In one aspect, a contoured bottom dielectric is interposed between the bottom electrode and the phosphor layer, having top and bottoms surfaces with contours approximately matching the nanotip contour. Likewise, a top dielectric may be interposed between the top electrode and the phosphor layer, having a bottom surface with a contour approximately matching the contour of phosphor layer top surface.
    • 提供了一种具有纳米尺度荧光体层的EL器件的器件和制造方法。 该方法包括:形成具有纳米尖端的底部电极; 形成覆盖在底部电极上的荧光体层,具有不规则形状的顶部和底部表面; 并且形成覆盖磷光体层的顶部电极。 底部电极顶表面具有纳米尖端轮廓,并且荧光体层不规则形状的顶表面和底表面具有与底部电极顶表面纳米尖端轮廓近似匹配的轮廓。 在一个方面,在底部电极和荧光体层之间插入有轮廓的底部电介质,其具有顶部和底部表面,轮廓几乎与纳米尖端轮廓相匹配。 类似地,顶部电介质可以插入在顶部电极和荧光体层之间,具有大致与荧光体层顶表面的轮廓相匹配的轮廓的底面。