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31. 发明申请

US20120069631A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120069631A1
公开(公告)日：2012-03-22
申请号：US13303544
申请日：2011-11-23
申请人： Shuichiro Yasuda , Tomohito Tsushima , Satoshi Sasaki , Katsuhisa Aratani
发明人： Shuichiro Yasuda , Tomohito Tsushima , Satoshi Sasaki , Katsuhisa Aratani
IPC分类号： G11C11/00
CPC分类号： G11C13/02 , G11C2213/11 , G11C2213/56 , G11C2213/79 , H01L27/2436 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/146 , H01L45/1625
摘要： A memory device of a resistance variation type, in which data retaining characteristic at the time of writing is improved, is provided. The memory device includes: a plurality of memory elements in which a memory layer is provided between a first electrode and a second electrode so that data is written or erased in accordance with a variation in electrical characteristics of the memory layer; and pulse applying means applying a voltage pulse or a current pulse selectively to the plurality of memory elements. The memory layer includes an ion source layer including an ionic-conduction material and at least one kind of metallic element, and the ion source layer further contains oxygen.
摘要翻译：提供了一种电阻变化型存储器件，其中写入时的数据保持特性得到改善。存储器件包括：多个存储元件，其中存储层设置在第一电极和第二电极之间，使得根据存储层的电特性的变化来写入或擦除数据; 以及对多个存储元件选择性地施加电压脉冲或电流脉冲的脉冲施加装置。存储层包括离子源层，其包括离子传导材料和至少一种金属元素，离子源层还含有氧。

32. 发明申请

US20120008370A1 MEMORY ELEMENT AND MEMORY DEVICE 有权
标题翻译：存储元件和存储器件
公开(公告)号：US20120008370A1
公开(公告)日：2012-01-12
申请号：US13164956
申请日：2011-06-21
申请人： Shuichiro Yasuda , Hiroaki Sei , Akira Kouchiyama , Masayuki Shimuta , Naomi Yamada
发明人： Shuichiro Yasuda , Hiroaki Sei , Akira Kouchiyama , Masayuki Shimuta , Naomi Yamada
IPC分类号： G11C11/21 , H01L45/00
CPC分类号： H01L45/085 , G11C13/0007 , H01L27/2436 , H01L27/2472 , H01L45/1233 , H01L45/1266 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144
摘要： A memory element and a memory device with improved controllability over resistance change by applied voltage are provided. The memory element includes a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer provided on the second electrode side and is higher in resistance value than the resistance change layer. A resistance value of the resistance change layer is changeable in response to a composition change by applied voltage to the first and second electrodes
摘要翻译：提供了一种通过施加电压改善电阻改变的可控性的存储元件和存储器件。存储元件依次包括第一电极，存储层和第二电极。存储层包括设置在第一电极侧的电阻变化层和设置在第二电极侧的电阻值比电阻变化层高的电阻值。响应于施加到第一和第二电极的电压的组成变化，电阻变化层的电阻值是可变化的

33. 发明申请

US20120008369A1 MEMORY ELEMENT AND DRIVE METHOD FOR THE SAME, AND MEMORY DEVICE 有权
标题翻译：存储元件及其驱动方法及其存储器件
公开(公告)号：US20120008369A1
公开(公告)日：2012-01-12
申请号：US13164945
申请日：2011-06-21
申请人： Masayuki Shimuta , Jun Sumino , Shuichiro Yasuda
发明人： Masayuki Shimuta , Jun Sumino , Shuichiro Yasuda
IPC分类号： G11C11/00 , H01L45/00
CPC分类号： G11C13/0009 , G11C2213/75 , G11C2213/79 , H01L27/2436 , H01L27/2481 , H01L45/04 , H01L45/06 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144 , H01L45/146
摘要： A memory element capable of increasing capacity with an improvement of distribution of resistance in the high-resistance state, a drive method therefor, and a memory device are provided. The memory element includes first and second electrodes, and a plurality of resistance change elements electrically connected in series between the first and second electrodes, whose resistance values are reversibly changeable in response to application of a voltage to the first and second electrodes, and changeable to the same resistance state relative to the voltage application.
摘要翻译：提供了能够通过改善高电阻状态下的电阻分布来提高容量的存储元件，其驱动方法和存储器件。存储元件包括第一和第二电极以及串联电连接在第一和第二电极之间的多个电阻变化元件，其电阻值可响应于向第一和第二电极施加电压而可逆地改变，并且可改变为相对于电压施加相同的电阻状态。

34. 发明申请

US20100259968A1 STORAGE DEVICE AND INFORMATION RERECORDING METHOD 有权
标题翻译：存储设备和信息验证方法
公开(公告)号：US20100259968A1
公开(公告)日：2010-10-14
申请号：US12747413
申请日：2008-12-11
申请人： Tomohito Tsushima , Tsunenori Shiimoto , Shuichiro Yasuda
发明人： Tomohito Tsushima , Tsunenori Shiimoto , Shuichiro Yasuda
IPC分类号： G11C11/00
CPC分类号： G11C13/0064 , G11C13/0069 , G11C2013/0071 , G11C2013/009 , G11C2213/56 , G11C2213/79
摘要： A storage device that improves ability of adjusting a resistance value level in recording and enables stable verification control is provided. VWL supplied from a second power source to a control terminal of a transistor is increased (increase portion: ΔVWL) for every rerecording by verification control by a WL adjustment circuit. In the case where a variable resistive element is able to record multiple values, ΔVWL is a value variable for every resistance value level of multiple value information. That is, ΔVWL is a value variable according to magnitude relation of a variation range of recording resistance of the variable resistive element due to a current. In the region where the variation range of the recording resistance is large (source-gate voltage VGS of the transistor is small), ΔVWL is small, while in the region where the variation range of the recording resistance is small (VGS is large), ΔVWL is large.
摘要翻译：提供一种存储装置，其提高了在记录中调整电阻值电平的能力并且实现了稳定的验证控制。通过WL调整电路的验证控制，每次重新录制时，从第二电源向晶体管的控制端子提供的VWL增加（增加部分：＆Dgr; VWL）。在可变电阻元件能够记录多个值的情况下，＆Dgr; VWL是多值信息的每个电阻值电平的值变量。也就是说，＆Dgr; VWL是根据由于电流引起的可变电阻元件的记录电阻的变化范围的大小关系的值变量。在记录电阻的变化范围大（晶体管的源极栅极电压VGS小）的区域中，＆Dgr; VWL小，而在记录电阻的变化范围小（VGS大的区域）），＆Dgr; VWL很大。

35. 发明申请

US20100254178A1 STORAGE DEVICE AND INFORMATION RE-RECORDING METHOD 有权
标题翻译：存储设备和信息再记录方法
公开(公告)号：US20100254178A1
公开(公告)日：2010-10-07
申请号：US12745952
申请日：2008-12-11
申请人： Tomohito Tsushima , Tsunenori Shiimoto , Shuichiro Yasuda
发明人： Tomohito Tsushima , Tsunenori Shiimoto , Shuichiro Yasuda
IPC分类号： G11C11/00
CPC分类号： G11C13/0064 , G11C11/56 , G11C13/0011 , G11C13/0069 , G11C2013/0071 , G11C2013/0092 , G11C2213/11 , G11C2213/56 , G11C2213/79
摘要： A storage device capable of reducing a number of cycles necessary for a verify at a time of multi-value recording is provided. An initial value of a potential difference VCG between a gate and a source of a switching transistor at the time of the verify is set to a value varied in accordance with a resistance value level of multi-value information. In the case where a writing side performs a 3-value recording, when “01” is the information, an initial value VGS01 is set to be smaller than VGS=1.7 V corresponding to the target resistance value level “01”, and when “00” is the information, a value is set to be lower than VGS=2.2 V corresponding to the target resistance value level “00” and higher than the above-described VGS01. This can reduce the number of cycles necessary for the verify process.
摘要翻译：提供能够减少多值记录时的验证所需的循环次数的存储装置。在验证时，开关晶体管的栅极和源极之间的电位差VCG的初始值被设定为根据多值信息的电阻值电平而变化的值。在写入方执行3值记录的情况下，当“01”是信息时，初始值VGS01被设定为小于对应于目标电阻值电平“01”的VGS = 1.7V，当“ 00“是相对于目标电阻值电平”00“，高于上述VGS01的VGS = 2.2V的值。这可以减少验证过程所需的周期数。

36. 发明申请

US20100012911A1 SWITCHING DEVICE 有权
标题翻译：切换设备
公开(公告)号：US20100012911A1
公开(公告)日：2010-01-21
申请号：US11990612
申请日：2006-08-08
申请人： Hiroyuki Akinaga , Shuichiro Yasuda , Isao Inoue , Hidenori Takagi
发明人： Hiroyuki Akinaga , Shuichiro Yasuda , Isao Inoue , Hidenori Takagi
IPC分类号： H01L47/00
CPC分类号： H01L45/04 , H01L45/1233 , H01L45/146 , H01L45/1625 , H01L45/1675
摘要： An objective of the present invention is to provide a switching device that shows two markedly different stable resistance characteristics reversibly and repetitively, and which is applicable to highly integrated nonvolatile memories.The present invention provides a switching device, which comprises a variable resistor element that has, between two electrodes, a metal-oxide thin-film comprising a single central metal element with a compositional variation; which is connected to a control circuit which can apply, between said two electrodes, a voltage or a current selected from among a voltage or a current of the first threshold or higher, a voltage or a current of the second threshold or lower whose absolute value is smaller than the absolute value of said first threshold, and a voltage or a current of the third threshold or lower whose absolute value is smaller than the absolute value of said second threshold; and in which the interelectrode resistance characteristic reversibly changes by a factor of 1,000 to 10,000 in the voltage or current region whose absolute value is equal to or below the third threshold.
摘要翻译：本发明的目的是提供一种可逆地重复显示两个明显不同的稳定电阻特性的开关装置，其可应用于高度集成的非易失性存储器。本发明提供一种开关装置，其包括可变电阻元件，该可变电阻元件在两个电极之间具有包含具有组成变化的单个中心金属元素的金属氧化物薄膜; 连接到可以在所述两个电极之间施加从第一阈值或更高的电压或电流中选择的电压或电流的控制电路，其绝对值的第二阈值或更低的电压或电流小于所述第一阈值的绝对值，绝对值小于所述第二阈值的绝对值的第三阈值以上的电压或电流; 并且其绝缘值等于或低于第三阈值的电压或电流区域中的电极间电阻特性可逆地改变1,000至10,000倍。

37. 发明授权

US07034750B2 Antenna mounting printed-circuit board 失效
标题翻译：天线安装印刷电路板
公开(公告)号：US07034750B2
公开(公告)日：2006-04-25
申请号：US10694598
申请日：2003-10-27
申请人： Kenji Asakura , Hidenobu Muranaka , Shuichiro Yasuda
发明人： Kenji Asakura , Hidenobu Muranaka , Shuichiro Yasuda
IPC分类号： H01Q1/38
CPC分类号： H01Q1/2275 , H01Q1/22 , H01Q1/2266 , H01Q1/243 , H01Q1/38 , H01Q9/0421 , H05K1/16
摘要： A chip-like printed antenna in which an open end is formed by at least two antenna conductors separated from each other is mounted on a printed-circuit board. A ground required by one or plural other modules is disposed and mounted on the printed-circuit board so as to surround a remaining area of a surrounding area of the printed antenna except a partial area as indicated by oblique line parts. By this, in the printed-circuit board , a radiation electric field does not come to have a dipole mode, but is formed into a balloon shape and is radiated in one direction as indicated by a broken line.
摘要翻译：其中开口端由彼此分离的至少两个天线导体形成的芯片状印刷天线安装在印刷电路板上。一个或多个其他模块所需的地面被布置和安装在印刷电路板上，以便围绕除了斜线部分所示的部分区域之外的打印天线的周围区域的剩余区域。由此，在印刷电路板中，辐射电场不会具有偶极模式，而是形成为气球形状，并且如虚线所示沿一个方向辐射。

38. 发明授权

US10658588B2 Memory cell switch device 有权
公开(公告)号：US10658588B2
公开(公告)日：2020-05-19
申请号：US15480782
申请日：2017-04-06
申请人： Shuichiro Yasuda , Tomohito Tsushima
发明人： Shuichiro Yasuda , Tomohito Tsushima
IPC分类号： H04L12/28 , H01L45/00 , H01L27/24 , G11C13/00 , C23C14/06 , H01L21/02 , H01L27/02
摘要： Memory structures with a plurality of memory cells that each include memory devices in combination with switch devices are provided. The memory device and switch device of each cell are connected in series, and include at least first and second electrodes. The first electrode features a relatively high resistance, to provide a reduced snap current during operation of the memory device. The first electrode with a relatively high resistance can contain or be entirely composed of TiAlN.

39. 发明申请

US20160104840A1 RESISTIVE MEMORY WITH A THERMALLY INSULATING REGION 审中-公开
标题翻译：具有绝热绝缘区的电阻记忆
公开(公告)号：US20160104840A1
公开(公告)日：2016-04-14
申请号：US14511818
申请日：2014-10-10
申请人： Beth Cook , Nirmal Ramaswamy , Shuichiro Yasuda , Scott Sills , Koji Miyata
发明人： Beth Cook , Nirmal Ramaswamy , Shuichiro Yasuda , Scott Sills , Koji Miyata
IPC分类号： H01L45/00
CPC分类号： H01L45/1293 , G11C13/0002 , H01L45/04 , H01L45/06 , H01L45/1233 , H01L45/1253
摘要： A resistive memory includes a memory cell having a first electrode, a second electrode and a resistive memory element between the first electrode and the second electrode. The memory cell includes a thermally insulating region. The thermally insulating region may be included in at least one electrode of the memory cell and/or within an electrically insulating region. The thermally insulating region can confine heat within the memory cell and thereby can reduce the current and/or voltage needed to write information in the resistive memory element.
摘要翻译：电阻存储器包括在第一电极和第二电极之间具有第一电极，第二电极和电阻存储元件的存储单元。存储单元包括绝热区域。绝热区域可以包括在存储单元的至少一个电极中和/或电绝缘区域内。隔热区域可以将热量限制在存储单元内，从而可以减少在电阻式存储元件中写入信息所需的电流和/或电压。

40. 发明授权

US09058873B2 Memory element having ion source layers with different contents of a chalcogen element 有权
标题翻译：具有硫属元素含量不同的离子源层的记忆元件
公开(公告)号：US09058873B2
公开(公告)日：2015-06-16
申请号：US13527764
申请日：2012-06-20
申请人： Masayuki Shimuta , Shuichiro Yasuda , Tetsuya Mizuguchi , Kazuhiro Ohba , Katsuhisa Aratani
发明人： Masayuki Shimuta , Shuichiro Yasuda , Tetsuya Mizuguchi , Kazuhiro Ohba , Katsuhisa Aratani
IPC分类号： H01L29/02 , G11C13/00 , H01L45/00 , H01L27/24
CPC分类号： G11C13/0007 , G11C13/0011 , G11C2213/55 , H01L27/2436 , H01L27/2472 , H01L45/085 , H01L45/1233 , H01L45/1266 , H01L45/144 , H01L45/146
摘要： A memory element includes: a first electrode, a memory layer, and a second electrode in this order. The memory layer includes a resistance change layer provided on the first electrode side, and an ion source layer containing one or more of metallic elements, and the ion source layer being provided on the second electrode side. The ion source layer includes a first ion source layer and a second ion source layer, the first ion source layer containing one or more of chalcogen elements of tellurium (Te), sulfur (S), and selenium (Se) and being provided on the resistance change layer side, and the second ion source layer containing the chalcogen element with a content different from a content in the first ion source layer and being provided on the second electrode side.
摘要翻译：存储元件依次包括：第一电极，存储层和第二电极。存储层包括设置在第一电极侧的电阻变化层和包含一种或多种金属元素的离子源层，并且离子源层设置在第二电极侧。离子源层包括第一离子源层和第二离子源层，第一离子源层包含碲（Te），硫（S）和硒（Se）的硫属元素中的一种或多种，并且被提供在电阻变化层侧，第二离子源层含有与第一离子源层的含量不同的硫族元素，并设置在第二电极侧。

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