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31. 发明申请

US20080305633A1 Manufacturing method of a semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的制造方法
公开(公告)号：US20080305633A1
公开(公告)日：2008-12-11
申请号：US12155221
申请日：2008-05-30
申请人： Hideharu Itatani , Kazuhiro Harada
发明人： Hideharu Itatani , Kazuhiro Harada
IPC分类号： H01L21/3205 , B05C11/00
CPC分类号： C23C16/4405 , H01L27/10817 , H01L27/10852 , H01L28/65
摘要： A method of manufacturing a semiconductor device comprises carrying a substrate into a processing chamber, forming a film containing ruthenium on the substrate by supplying a material gas into the processing chamber, carrying the film-formed substrate out of the processing chamber; and cleaning an inside of the processing chamber by executing, alternately plural times, removing deposits containing ruthenium deposited in the processing chamber by supplying a cleaning gas whose molecule has a fluorine atom or a chlorine atom into the processing chamber and exposing surfaces of the deposits by removing a by-product generated so as to cover the surfaces of the deposits in removing the deposits.
摘要翻译：一种半导体器件的制造方法，其特征在于，将基板搬入处理室，在所述处理室内通过向所述处理室内供给材料气体而将所述膜形成基板从所述处理室内输送出来，在所述基板上形成含有钌的膜; 并且通过将分子具有氟原子或氯原子的清洗气体供给到所述处理室中并且将所述沉积物的表面暴露在所述处理室内，并通过执行多次清除处理室内沉积的含有钌的沉积物除去生成的副产物以便在去除沉积物时覆盖沉积物的表面。

32. 发明授权

US07294203B2 Heat shielding member of silicon single crystal pulling system 有权
标题翻译：硅单晶拉制系统的隔热构件
公开(公告)号：US07294203B2
公开(公告)日：2007-11-13
申请号：US10527566
申请日：2003-09-12
申请人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
发明人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
IPC分类号： C30B35/00
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H1) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.2 d or less, a vertical distance (H2) between the upper rim of the outer peripheral face and the lowest portion of the heat accumulating portion is 10 mm or more and d or less, and the minimum distance (W2) between the inner peripheral face of the quartz crucible and the outer peripheral face of the heat accumulating portion is 20 mm or more and d/4 or less.
摘要翻译：在从存储在石英坩埚中的硅熔体中拉出硅单晶棒的装置中设置有隔热构件，并且配备有将来自围绕硅单晶棒的外周面的加热器的辐射热屏蔽的管部，设置在管部的下部的隆起部，以及设置在隆起部的内侧的环状积蓄部。蓄热部的热导率为5W /（m·℃）以下，其内周面为10mm以上且d / 2以上的高度（H <1），或硅单晶棒的直径称为d，硅单晶棒的外周面与蓄热的内周面之间的最小距离（W 1> 1）较小部分形成为10mm以上且0.2d以下，外周面的上缘和蓄热部的最下部之间的垂直距离（H 2 2 N）为 10mm以上且d以下，石英坩埚的内周面与蓄热部的外周面之间的最小距离（W 2 2 <2）为20mm以上，d / 4以下。

33. 发明申请

US20060124052A1 Heat shielding member of silicon single crystal pulling system 有权
标题翻译：硅单晶拉制系统的隔热构件
公开(公告)号：US20060124052A1
公开(公告)日：2006-06-15
申请号：US10527566
申请日：2003-09-12
申请人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
发明人： Kazuhiro Harada , Yoji Suzuki , Senlin Fu , Hisashi Furuya , Hidenobu Abe
IPC分类号： C30B15/00
CPC分类号： C30B29/06 , C30B15/14 , C30B15/203 , Y10T117/1068 , Y10T117/1072 , Y10T117/1076 , Y10T117/1088
摘要： A heat shielding member is provided in a device pulling up a silicon single crystal rod from a silicon melt stored in a quartz crucible, and equipped with a tube portion which shields radiant heat from the heater surrounding the outer peripheral face of the silicon single crystal rod, a swelling portion provided at the lower portion of the tube portion, and a ring-shape heat accumulating portion provided at the inside of the swelling portion. The heat accumulating portion is a thermal conductivity of 5 W/(m·° C.) or less, its inner peripheral face is a height (H1) of 10 mm or more and d/2 or less when the diameter of the silicon single crystal rod is referred to as d and the minimum distance (W1) between the outer peripheral face of the silicon single crystal rod and the inner peripheral face of the heat accumulating portion is formed so as to be 10 mm or more and 0.2 d or less, a vertical distance (H2) between the upper rim of the outer peripheral face and the lowest portion of the heat accumulating portion is 10 mm or more and d or less, and the minimum distance (W2) between the inner peripheral face of the quartz crucible and the outer peripheral face of the heat accumulating portion is 20 mm or more and d/4 or less.
摘要翻译：在从存储在石英坩埚中的硅熔体中拉出硅单晶棒的装置中设置有隔热构件，并且配备有将来自围绕硅单晶棒的外周面的加热器的辐射热屏蔽的管部，设置在管部的下部的隆起部，以及设置在隆起部的内侧的环状积蓄部。蓄热部的热导率为5W /（m·℃）以下，其内周面为10mm以上且d / 2以上的高度（H <1），或硅单晶棒的直径称为d，硅单晶棒的外周面与蓄热的内周面之间的最小距离（W 1> 1）较小部分形成为10mm以上且0.2d以下，外周面的上缘和蓄热部的最下部之间的垂直距离（H 2 2 N）为 10mm以上且d以下，石英坩埚的内周面与蓄热部的外周面之间的最小距离（W 2 2 <2）为20mm以上，d / 4以下。

34. 发明申请

US20050183660A1 Method of identifying defect distribution in silicon single crystal ingot 有权
标题翻译：识别硅单晶锭缺陷分布的方法
公开(公告)号：US20050183660A1
公开(公告)日：2005-08-25
申请号：US10784411
申请日：2004-02-23
申请人： Jun Furukawa , Kazunari Kurita , Kazuhiro Harada
发明人： Jun Furukawa , Kazunari Kurita , Kazuhiro Harada
IPC分类号： C30B15/00 , C30B21/06 , C30B25/18 , C30B27/02 , C30B28/10 , C30B29/06 , C30B30/04 , C30B33/00
CPC分类号： C30B33/00 , C30B25/18 , C30B29/06 , Y10T117/1008
摘要： A surface of a reference sample is contaminated with a transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. A concentration of recombination centers formed by the transition metal is measured in the entire heat-treated reference sample, and a region [V], a region [Pv], a region [Pi], and a region [I] in the reference sample are defined based on the values measured. Meanwhile, recombination lifetimes associated with the transition metal are measured in the entire heat-treated reference sample. Based on both of the measurement results, a correlation line of the concentration of recombination centers and the recombination lifetimes is produced. A surface of the measurement sample is contaminated with the transition metal, and a heat treatment is performed to diffuse the transition metal in the sample. Recombination lifetimes associated with the transition metal are measured in the entire heat-treated measurement sample, and the values measured are checked against the correlation line to infer the region [Pv] and the region [Pi] as well as the boundary thereof in the measurement sample.
摘要翻译：参考样品的表面被过渡金属污染，进行热处理以扩散样品中的过渡金属。在整个热处理参考样品中测量由过渡金属形成的复合中心的浓度，参考样品中的区域[V]，区域[Pv]，区域[]和区域[I] 基于测量值定义。同时，在整个热处理参考样品中测量与过渡金属相关的复合寿命。基于这两个测量结果，产生了重组中心浓度和复合寿命的相关线。测量样品的表面被过渡金属污染，进行热处理以扩散样品中的过渡金属。在整个热处理测量样品中测量与过渡金属相关联的重组寿命，并且根据相关线检查所测量的值以推断测量中的区域[Pv]和区域[Pi]及其边界样品。

35. 发明授权

US06380118B1 Nonlinear dielectric ceramic, pulse generating capacitor, high-pressure vapor discharge lamp circuit, and high-pressure vapor discharge lamp 有权
标题翻译：非线性介质陶瓷，脉冲发生电容器，高压蒸汽放电灯电路和高压蒸汽放电灯
公开(公告)号：US06380118B1
公开(公告)日：2002-04-30
申请号：US09467998
申请日：1999-12-20
申请人： Kazuhiro Harada , Harunobu Sano
发明人： Kazuhiro Harada , Harunobu Sano
IPC分类号： C04B3546
CPC分类号： C04B35/4682 , H01G4/1227 , H05B41/04 , H05B41/042
摘要： A nonlinear dielectric ceramic having the D-E hysteresis characteristics contains a barium titanate-based compound as a principal constituent and a nonreducing oxide glass as a secondary constituent, and thus the nonlinear dielectric ceramic has reduction resistance. A pulse generating capacitor including the nonlinear dielectric ceramic, a high-pressure vapor discharge lamp circuit including the pulse generating capacitor, and a high-pressure vapor discharge lamp including the pulse generating capacitor are also disclosed.
摘要翻译：具有D-E磁滞特性的非线性电介质陶瓷包含钛酸钡系化合物作为主要成分和非还原氧化物玻璃作为二次成分，因此非线性电介质陶瓷具有还原性。还公开了一种包括非线性介电陶瓷的脉冲发生电容器，包括脉冲发生电容器的高压蒸汽放电灯电路和包括脉冲发生电容器的高压蒸汽放电灯。

36. 发明授权

US08492258B2 Method of manufacturing semiconductor device and substrate processing apparatus 有权
标题翻译：制造半导体器件和衬底处理设备的方法
公开(公告)号：US08492258B2
公开(公告)日：2013-07-23
申请号：US13341428
申请日：2011-12-30
申请人： Kazuhiro Harada
发明人： Kazuhiro Harada
IPC分类号： H01L21/3205 , H01L21/31 , H01L21/469 , H01L21/02 , H01L29/94
CPC分类号： H01L21/28088 , C23C16/34 , C23C16/45523 , C23C16/45531 , H01L29/495 , H01L29/513 , H01L29/517
摘要： A manufacturing method of a semiconductor device of the present invention includes the step of forming an insulating film on a substrate, and the step of forming a high dielectric constant insulating film on the insulating film, and the step of forming a titanium aluminum nitride film on the high dielectric constant insulating film, wherein in the step of forming the titanium aluminum nitride film, formation of an aluminum nitride film and formation of a titanium nitride film are alternately repeated, and at that time, the aluminum nitride film is formed firstly and/or lastly.
摘要翻译：本发明的半导体器件的制造方法包括在基板上形成绝缘膜的步骤，以及在绝缘膜上形成高介电常数绝缘膜的步骤，以及在氮化铝上形成氮化铝膜的步骤高介电常数绝缘膜，其中在形成氮化铝钛膜的步骤中，交替地重复形成氮化铝膜和形成氮化钛膜，此时首先形成氮化铝膜和/ 或最后。

37. 发明授权

US08435905B2 Manufacturing method of semiconductor device, and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法以及基板处理装置
公开(公告)号：US08435905B2
公开(公告)日：2013-05-07
申请号：US11921936
申请日：2006-06-13
申请人： Sadayoshi Horii , Hideharu Itatani , Kazuhiro Harada
发明人： Sadayoshi Horii , Hideharu Itatani , Kazuhiro Harada
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： C23C16/18 , C23C16/45534 , C23C16/45542 , H01L21/28562 , H01L27/10817 , H01L27/10852 , H01L28/65
摘要： The present invention provides a manufacturing method of a semiconductor device that has a rapid film formation rate and high productivity, and to provide a substrate processing apparatus.The method comprises the steps of loading a substrate into a processing chamber; forming a thin film having a desired thickness on the substrate by setting as one cycle the step of supplying into the processing chamber adsorption auxiliary gas for aiding an adsorption of a source gas vaporized from a liquid source on the substrate and causing this adsorption auxiliary gas to be adsorbed on the substrate, the step of supplying the source gas into the processing chamber, causing the source gas to react with the adsorption auxiliary gas on the substrate, and causing this source gas to be adsorbed on the substrate, and the step of supplying a reaction gas into the processing chamber and causing this reaction gas to react with the source gas adsorbed on the substrate, and repeating this cycle a plurality of times; and unloading the substrate provided with the thin film from the inside of the processing chamber.
摘要翻译：本发明提供一种具有快速成膜速度和高生产率的半导体器件的制造方法，并提供一种衬底处理设备。该方法包括将基板装载到处理室中的步骤; 在基板上形成具有期望厚度的薄膜，其中，将作为一个循环的步骤设置在处理室中的吸附辅助气体，用于辅助从液体源蒸发的源气体吸附在基板上，并使该吸附辅助气体吸附在基板上，将源气体供给到处理室中，使源气体与基板上的吸附辅助气体反应并使该源气体吸附在基板上的工序，使反应气体进入处理室，使该反应气体与吸附在基板上的原料气反应，并重复该循环多次; 以及从处理室的内部卸载设置有薄膜的基板。

38. 发明申请

US20110023773A1 VITREOUS SILICA CRUCIBLE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：维生素二氧化硅可溶性及其制备方法
公开(公告)号：US20110023773A1
公开(公告)日：2011-02-03
申请号：US12934837
申请日：2009-03-23
申请人： Kazuhiro Harada , Tadahiro Sato , Masaru Sato
发明人： Kazuhiro Harada , Tadahiro Sato , Masaru Sato
IPC分类号： C30B15/10 , C03B19/09
CPC分类号： C30B15/10 , C03B19/095 , Y10T117/1032
摘要： Provided is a vitreous silica crucible for pulling a silicon single crystal, having an inner surface layer which is excellent in uniformity and has a low bubble content rate, and a method of manufacturing the same. Provided is a method of manufacturing a vitreous silica crucible for pulling a silicon single crystal comprising the step of forming an inner surface layer 30 made of synthetic silica powder, wherein the inner surface layer 30 comprises an inner side portion 31 of the inner surface layer 30, the inner side portion 31 made of a first synthetic silica powder; and a surface side portion 32 of the inner surface layer 30, the surface side portion made of a second synthetic silica powder having a smaller average particle size than that of the first synthetic silica powder. The second synthetic silica powder to form the surface side portion 32 of the inner surface layer 30 has an average particle diameter which is smaller than that of the first synthetic silica powder to form the inner side portion 31 of the inner surface layer 30 by 10 μm or more.
摘要翻译：本发明提供一种用于拉伸硅单晶的玻璃状石英坩埚及其制造方法，其具有均匀性优异且气泡含量低的内表面层。提供一种制造用于拉制硅单晶的石英玻璃坩埚的方法，包括形成由合成二氧化硅粉末制成的内表面层30的步骤，其中内表面层30包括内表面层30的内侧部分31 由第一合成二氧化硅粉末制成的内侧部分31; 和内表面层30的表面侧部分32，表面侧部分由平均粒径小于第一合成二氧化硅粉末的第二合成二氧化硅粉末制成。形成内表面层30的表面侧部分32的第二合成二氧化硅粉末的平均粒径小于第一合成二氧化硅粉末的平均粒径，以将内表面层30的内侧部分31形成10μm 或者更多。

39. 发明授权

US07615952B2 Electric motor driving device, and air conditioner using the same 有权
标题翻译：电动机驱动装置及使用其的空调装置
公开(公告)号：US07615952B2
公开(公告)日：2009-11-10
申请号：US11574016
申请日：2005-08-24
申请人： Kazuhiro Harada , Chisumi Harada, legal representative
发明人： Kazuhiro Harada
IPC分类号： H02P1/00
CPC分类号： H02P29/027 , H02M1/32 , H02P29/032
摘要： Disclosed is a motor-driving device capable of protecting an inverter from breakdown. First current-protecting section retains reference voltage value Vref1 as a preset value. If the current to be fed into inverter exceeds value Vref1, first current-protecting section shuts off the output of driver and outputs a first warning to driving-signal generator to shut off generating driving signals. This protects inverter from breakdown. Second current-protection section retains reference voltage value Vref2 that is smaller than value Vref1. If the detected current exceeds value Vref2, second current-protecting section outputs a second warning. Receiving the second warning, driving-signal generator immediately stops generating driving signals; however, it resumes output of driving signals after no longer receiving second warning. The structure above protects inverter from breakdown without frequent stops of brushless motor.
摘要翻译：公开了一种能够保护逆变器不发生故障的电动机驱动装置。第一电流保护部分将参考电压值Vref1保持为预设值。如果要馈送到逆变器的电流超过值Vref1，则第一电流保护部分切断驱动器的输出，并向驱动信号发生器输出第一警告以切断产生的驱动信号。这样可以防止变频器故障。第二电流保护部分保持小于值Vref1的参考电压值Vref2。如果检测到的电流超过值Vref2，则第二电流保护部输出第二警告。接收到第二个警告，驱动信号发生器立即停止产生驾驶信号; 然而，在不再接收到第二个警告之后，它恢复驱动信号的输出。上述结构可防止变频器故障，无需无刷电机频繁停机。

40. 发明申请

US20070217659A1 SYSTEM AND METHOD FOR PERSONAL IDENTIFICATIOIN USING BIOMETRICS DATA, AND COMPUTER-READABLE RECORDING MEDIUM IN WHICH PERSONAL IDENTIFICATION PROGRAM IS STORED 审中-公开
标题翻译：使用生物量数据的个人识别系统和方法以及存储个人识别程序的计算机可读记录介质
公开(公告)号：US20070217659A1
公开(公告)日：2007-09-20
申请号：US11494490
申请日：2006-07-28
申请人： Kazuhiro Harada
发明人： Kazuhiro Harada
IPC分类号： G06K9/00
CPC分类号： G06K9/00885 , G06F21/32 , G07C9/00158
摘要： A personal identification system using biometrics data including a biometrics data inputting section, a characteristic data obtaining section for obtaining characteristic data of the collation object person, a biometrics data retaining section for retaining registration biometrics data of each registered object person, which data is previously registered and correlated with one of collation groups according to registration characteristic data, and a biometrics data collating section for collating the collation biometrics data with the registration biometrics data, wherein the biometrics data collating section extracts a particular group from the plural collation groups based on the characteristic data of the collation object person, and collates the collation biometrics data with registration biometrics data of the particular group. Consequently, the collation biometrics data can be collated with registration biometrics data of a number of registered object persons in a short time without requiring primary verification using ID and others.
摘要翻译：一种使用生物特征数据的个人识别系统，包括生物特征数据输入部分，特征数据获取部分，用于获取核对对象人的特征数据;生物特征数据保留部分，用于保留每个注册对象人的注册生物特征数据，该数据预先被注册并且根据注册特征数据与对照组中的一个相关联;以及生物特征数据对照部分，用于将核对生物特征数据与注册生物特征数据进行核对，其中生物特征数据对照部分基于特征从多个核对组中提取特定组对照对象人的数据，并且将核对生物特征数据与特定组的注册生物特征数据进行整理。因此，核对生物特征数据可以在短时间内与许多注册对象人员的注册生物特征数据进行整理，而不需要使用ID等进行主要验证。

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