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31. 发明授权

US5990986A Thin film transistor substrate for a liquid crystal display having buffer layers and a manufacturing method thereof 失效
标题翻译：具有缓冲层的液晶显示器用薄膜晶体管基板及其制造方法
公开(公告)号：US5990986A
公开(公告)日：1999-11-23
申请号：US87407
申请日：1998-05-29
申请人： Jean-Ho Song , Sang-Ki Kwak
发明人： Jean-Ho Song , Sang-Ki Kwak
IPC分类号： G02F1/1362 , H01L21/336 , G02F1/136 , G02F1/1343
CPC分类号： H01L29/66765 , G02F1/136227
摘要： Gate wire is formed on a transparent glass substrate, and a gate insulating film, an amorphous silicon layer, a doped amorphous silicon layer and Cr layer are deposited in sequence. After patterning the Cr layer, the doped amorphous silicon layer and the amorphous silicon layer, an ITO (indium-tin-oxide) layer is deposited and patterned, and then the exposed portions of the Cr layer and of the doped amorphous silicon layer are removed. A passivation film is deposited and patterned to form a plurality of contact holes over the ITO layer, and then a conductive layer is deposited and patterned to form a data line which is connected to the ITO layer through the contact holes.
摘要翻译：栅极线形成在透明玻璃基板上，依次沉积栅绝缘膜，非晶硅层，掺杂非晶硅层和Cr层。在对Cr层进行图案化之后，掺杂非晶硅层和非晶硅层沉积和图案化ITO（铟锡氧化物）层，然后去除Cr层和掺杂非晶硅层的暴露部分。钝化膜被沉积并图案化以在ITO层上形成多个接触孔，然后沉积并图案化导电层以形成通过接触孔连接到ITO层的数据线。

32. 发明授权

US08823005B2 Thin-film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US08823005B2
公开(公告)日：2014-09-02
申请号：US13167668
申请日：2011-06-23
申请人： O-Sung Seo , Seong-Hun Kim , Yang-Ho Bae , Jean-Ho Song
发明人： O-Sung Seo , Seong-Hun Kim , Yang-Ho Bae , Jean-Ho Song
IPC分类号： H01L29/66 , H01L29/45 , H01L29/786
CPC分类号： H01L29/78618 , H01L29/458 , H01L29/66765
摘要： A thin-film transistor (TFT) and a method of manufacturing the same are disclosed herein. The TFT may include a gate electrode disposed on an insulating substrate, an insulating layer disposed on the insulating substrate and the gate electrode, an active layer pattern disposed on the insulating layer to overlap the gate electrode, a source electrode disposed on the insulating layer and at least part of which overlaps the active layer pattern, and a drain electrode which is separated from the source electrode and at least part of which overlaps the active layer pattern. A first ohmic contact layer pattern may be disposed between the active layer pattern and the source electrode and between the active layer pattern and the drain electrode. The first ohmic contact layer may have higher nitrogen content on its surface than in other portions of the first ohmic contact layer.
摘要翻译：本文公开了一种薄膜晶体管（TFT）及其制造方法。 TFT可以包括设置在绝缘基板上的栅电极，设置在绝缘基板上的绝缘层和栅电极，设置在绝缘层上的与栅电极重叠的有源层图案，设置在绝缘层上的源电极和其至少一部分与有源层图案重叠，以及与源电极分离并且其至少一部分与有源层图案重叠的漏电极。可以在有源层图案和源电极之间以及有源层图案和漏电极之间设置第一欧姆接触层图案。第一欧姆接触层在其表面上可以具有比在第一欧姆接触层的其它部分更高的氮含量。

33. 发明授权

US08686423B2 Thin film transistor substrate and manufacturing method thereof 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08686423B2
公开(公告)日：2014-04-01
申请号：US13604082
申请日：2012-09-05
申请人： Sung-Ryul Kim , Jean-Ho Song , Jae-Hyoung Youn , O-Sung Seo , Byeong-Beom Kim , Je-Hyeong Park , Jong-In Kim , Jae-Jin Song
发明人： Sung-Ryul Kim , Jean-Ho Song , Jae-Hyoung Youn , O-Sung Seo , Byeong-Beom Kim , Je-Hyeong Park , Jong-In Kim , Jae-Jin Song
IPC分类号： H01L31/00
CPC分类号： H01L29/78603 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/66765
摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention comprises a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, and a data line formed on the semiconductor layer, wherein the data line comprises a lower data layer, an upper data layer, a data oxide layer, and a buffer layer, wherein the upper data layer and the buffer layer comprise a same material.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管阵列面板包括基板，形成在基板上的栅极线，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上的半导体层，以及数据其中所述数据线包括下数据层，上数据层，数据氧化层和缓冲层，其中所述上数据层和所述缓冲层包括相同的材料。

34. 发明授权

US08476123B2 Method for manufacturing thin film transistor array panel 有权
标题翻译：制造薄膜晶体管阵列面板的方法
公开(公告)号：US08476123B2
公开(公告)日：2013-07-02
申请号：US13109686
申请日：2011-05-17
申请人： Dong-Ju Yang , Yu-Gwang Jeong , Jean-Ho Song , Ki-Yeup Lee , Shin-Il Choi , Tae-Woo Kim
发明人： Dong-Ju Yang , Yu-Gwang Jeong , Jean-Ho Song , Ki-Yeup Lee , Shin-Il Choi , Tae-Woo Kim
IPC分类号： H01L21/84
CPC分类号： H01L27/1288 , H01L21/32138 , H01L27/1214 , H01L27/1255 , H01L29/458
摘要： A method for manufacturing a thin film transistor array panel includes forming a gate line; forming an insulating layer on the gate line; forming first and second silicon layers first and second metal layers; forming a photoresist pattern having first and second portions; forming first and second metal patterns by etching the first and second metal layers; processing the first metal pattern with SF6 or SF6/He; forming silicon and semiconductor patterns by etching the second and first silicon layers; removing the first portion of the photoresist pattern; forming an upper layer of a data wire by wet etching the second metal pattern; forming a lower layer of the data wire and an ohmic contact by etching the first metal and amorphous silicon patterns; forming a passivation layer including a contact hole on the upper layer; and forming a pixel electrode on the passivation layer.
摘要翻译：薄膜晶体管阵列板的制造方法包括：形成栅极线; 在栅极线上形成绝缘层; 第一和第二硅层第一和第二金属层; 形成具有第一和第二部分的光致抗蚀剂图案; 通过蚀刻第一和第二金属层来形成第一和第二金属图案; 用SF6或SF6 / He处理第一金属图案; 通过蚀刻第二和第一硅层形成硅和半导体图案; 去除光致抗蚀剂图案的第一部分; 通过湿法蚀刻第二金属图案形成数据线的上层; 通过蚀刻第一金属和非晶硅图案形成数据线的下层和欧姆接触; 在上层形成包括接触孔的钝化层; 以及在所述钝化层上形成像素电极。

35. 发明申请

US20110175088A1 Thin-Film Transistor Substrate and Method of Fabricating the Same 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US20110175088A1
公开(公告)日：2011-07-21
申请号：US13004665
申请日：2011-01-11
申请人： Jong In Kim , Young-Wook Lee , Jean-Ho Song , Jae-Hyoung Yoon , Sung-Ryul Kim , Byeong-Beom Kim , Je-Hyeong Park , Woo-Geun Lee
发明人： Jong In Kim , Young-Wook Lee , Jean-Ho Song , Jae-Hyoung Yoon , Sung-Ryul Kim , Byeong-Beom Kim , Je-Hyeong Park , Woo-Geun Lee
IPC分类号： H01L29/786 , H01L21/28
CPC分类号： H01L27/1225 , H01L27/124 , H01L27/1288
摘要： A thin-film transistor (TFT) substrate having reduced defects is fabricated using a reduced number of masks. The TFT substrate includes gate wiring formed on a substrate. The gate wiring includes a gate electrode. A semiconductor pattern is formed on the gate wiring. An etch-stop pattern is formed on the semiconductor pattern. Data wiring includes a source electrode which is formed on the semiconductor pattern and the etch-stop pattern. Each of the gate wiring and the data wiring includes a copper-containing layer and a buffer layer formed on or under the copper-containing layer.
摘要翻译：使用减少数量的掩模制造具有减少的缺陷的薄膜晶体管（TFT）基板。 TFT基板包括形成在基板上的栅极布线。栅极布线包括栅电极。在栅极布线上形成半导体图形。在半导体图案上形成蚀刻停止图案。数据布线包括形成在半导体图案上的源电极和蚀刻停止图案。栅极布线和数据布线中的每一个包括在含铜层上形成的含铜层和缓冲层。

36. 发明授权

US06905917B2 Thin film transistor array panel for liquid crystal display and method for manufacturing the same 有权
公开(公告)号：US06905917B2
公开(公告)日：2005-06-14
申请号：US10112890
申请日：2002-04-01
申请人： Jean-Ho Song , Chang-Oh Jeong
发明人： Jean-Ho Song , Chang-Oh Jeong
IPC分类号： G02F1/1368 , G02F1/136 , G02F1/1362 , H01L21/3205 , H01L21/768 , H01L23/52 , H01L29/786 , H01L29/74
CPC分类号： G02F1/13458 , G02F1/136227 , G02F1/136286 , G02F2001/13629
摘要： A method of fabricating a thin film transistor array panel for a liquid crystal display is provided. A gate line assembly is formed on an insulating substrate. The gate line assembly includes gate lines and gate electrodes connected to the gate lines. A gate insulating layer is formed on the insulating substrate having the gate line assembly. A semiconductor layer is formed on the gate insulating layer. A data line assembly is formed, the data line assembly includes data lines crossing over the gate lines, source electrodes connected to the data lines and placed adjacent to the gate electrodes, and drain electrodes placed opposite to the source electrodes with respect to the gate electrodes. A protective layer is deposited onto the insulating substrate having the data line assembly. The protective layer is patterned to form first contact holes exposing the drain electrodes. Pixel electrodes are formed on the protective layer such that the pixel electrodes are electrically connected to the drain electrodes, wherein one of the gate line assembly and the data line assembly further includes a low resistance conductive layer.

37. 发明授权

US08455871B2 Thin film transistor array panel and method for manufacturing the same 有权
公开(公告)号：US08455871B2
公开(公告)日：2013-06-04
申请号：US12859792
申请日：2010-08-20
申请人： Chang-Oh Jeong , Woo-Sung Sohn , Dong-Gyu Kim , Shi-Yul Kim , Ki-Yeup Lee , Jean-Ho Song
发明人： Chang-Oh Jeong , Woo-Sung Sohn , Dong-Gyu Kim , Shi-Yul Kim , Ki-Yeup Lee , Jean-Ho Song
IPC分类号： H01L29/04
CPC分类号： H01L33/16 , H01L27/124 , H01L27/1288
摘要： A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer.

38. 发明授权

US08304299B2 Thin film transistor substrate and manufacturing method thereof 有权
标题翻译：薄膜晶体管基板及其制造方法
公开(公告)号：US08304299B2
公开(公告)日：2012-11-06
申请号：US12821668
申请日：2010-06-23
申请人： Sung-Ryul Kim , Jean-Ho Song , Jae-Hyoung Youn , O-Sung Seo , Byeong-Beom Kim , Je-Hyeong Park , Jong-In Kim , Jae-Jin Song
发明人： Sung-Ryul Kim , Jean-Ho Song , Jae-Hyoung Youn , O-Sung Seo , Byeong-Beom Kim , Je-Hyeong Park , Jong-In Kim , Jae-Jin Song
IPC分类号： H01L21/00
CPC分类号： H01L29/78603 , H01L27/124 , H01L27/1288 , H01L29/458 , H01L29/66765
摘要： A thin film transistor array panel according to an exemplary embodiment of the present invention comprises a substrate, a gate line formed on the substrate, a gate insulating layer formed on the gate line, a semiconductor layer formed on the gate insulating layer, and a data line formed on the semiconductor layer, wherein the data line comprises a lower data layer, an upper data layer, a data oxide layer, and a buffer layer, wherein the upper data layer and the buffer layer comprise a same material.
摘要翻译：根据本发明的示例性实施例的薄膜晶体管阵列面板包括基板，形成在基板上的栅极线，形成在栅极线上的栅极绝缘层，形成在栅极绝缘层上的半导体层，以及数据其中所述数据线包括下数据层，上数据层，数据氧化层和缓冲层，其中所述上数据层和所述缓冲层包括相同的材料。

39. 发明授权

US08174020B2 Thin film transistor array panel and method for manufacturing the same 有权
标题翻译：薄膜晶体管阵列面板及其制造方法
公开(公告)号：US08174020B2
公开(公告)日：2012-05-08
申请号：US12556277
申请日：2009-09-09
申请人： Young-Wook Lee , Hong-Suk Yoo , Jean-Ho Song , Jae-Hyoung Youn , Woo-Geun Lee , Ki-Won Kim , Jong-In Kim
发明人： Young-Wook Lee , Hong-Suk Yoo , Jean-Ho Song , Jae-Hyoung Youn , Woo-Geun Lee , Ki-Won Kim , Jong-In Kim
IPC分类号： H01L27/14
CPC分类号： H01L29/66742 , H01L27/1225 , H01L27/124 , H01L27/1248
摘要： A thin film transistor substrate according to an embodiment of the present invention includes: an insulation substrate; a gate line formed on the insulation substrate; a first interlayer insulating layer formed on the gate line; a data line and a gate electrode formed on the first interlayer insulating layer; a gate insulating layer formed on the data line and gate electrode; a semiconductor formed on the gate insulating layer and overlapping the gate electrode; a second interlayer insulating layer formed on the semiconductor; a first connection formed on the second interlayer insulating layer and electrically connecting the gate line and the gate electrode to each other; a drain electrode connected to the semiconductor; a pixel electrode connected to the drain electrode; and a second connection connecting the data line and the semiconductor to each other.
摘要翻译：根据本发明实施例的薄膜晶体管基板包括：绝缘基板; 形成在所述绝缘基板上的栅极线; 形成在栅极线上的第一层间绝缘层; 形成在所述第一层间绝缘层上的数据线和栅电极; 形成在数据线和栅电极上的栅极绝缘层; 形成在栅极绝缘层上并与栅电极重叠的半导体; 形成在所述半导体上的第二层间绝缘层; 形成在所述第二层间绝缘层上并将所述栅极线和所述栅电极彼此电连接的第一连接; 连接到半导体的漏电极; 连接到所述漏电极的像素电极; 以及将数据线和半导体彼此连接的第二连接。

40. 发明申请

US20120037913A1 THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20120037913A1
公开(公告)日：2012-02-16
申请号：US13167668
申请日：2011-06-23
申请人： O-Sung SEO , Seong-Hun KIM , Yang-Ho BAE , Jean-Ho SONG
发明人： O-Sung SEO , Seong-Hun KIM , Yang-Ho BAE , Jean-Ho SONG
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/78618 , H01L29/458 , H01L29/66765
摘要： A thin-film transistor (TFT) and a method of manufacturing the same are disclosed herein. The TFT may include a gate electrode disposed on an insulating substrate, an insulating layer disposed on the insulating substrate and the gate electrode, an active layer pattern disposed on the insulating layer to overlap the gate electrode, a source electrode disposed on the insulating layer and at least part of which overlaps the active layer pattern, and a drain electrode which is separated from the source electrode and at least part of which overlaps the active layer pattern. A first ohmic contact layer pattern may be disposed between the active layer pattern and the source electrode and between the active layer pattern and the drain electrode. The first ohmic contact layer may have higher nitrogen content on its surface than in other portions of the first ohmic contact layer.
摘要翻译：本文公开了一种薄膜晶体管（TFT）及其制造方法。 TFT可以包括设置在绝缘基板上的栅电极，设置在绝缘基板上的绝缘层和栅电极，设置在绝缘层上的与栅电极重叠的有源层图案，设置在绝缘层上的源电极和其至少一部分与有源层图案重叠，以及与源电极分离并且其至少一部分与有源层图案重叠的漏电极。可以在有源层图案和源电极之间以及有源层图案和漏电极之间设置第一欧姆接触层图案。第一欧姆接触层在其表面上可以具有比在第一欧姆接触层的其它部分更高的氮含量。

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