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31. 发明申请

US20050176231A1 BUMPING PROCESS OF LIGHT EMITTING DIODE 有权
标题翻译：发光二极管的保护过程
公开(公告)号：US20050176231A1
公开(公告)日：2005-08-11
申请号：US10711280
申请日：2004-09-07
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L21/326 , H01L21/44 , H01L21/479 , H01L21/52 , H01L21/60 , H01L33/62
CPC分类号： H01L24/11 , H01L33/62 , H01L2224/05001 , H01L2224/05022 , H01L2224/05027 , H01L2224/0508 , H01L2224/051 , H01L2224/05144 , H01L2224/05147 , H01L2224/05155 , H01L2224/05166 , H01L2224/05171 , H01L2224/05184 , H01L2224/05572 , H01L2224/056 , H01L2224/05644 , H01L2224/05647 , H01L2224/05655 , H01L2224/05666 , H01L2224/05671 , H01L2224/05684 , H01L2224/1147 , H01L2224/13099 , H01L2924/01013 , H01L2924/01022 , H01L2924/01024 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/01322 , H01L2924/014 , H01L2924/12041 , H01L2924/00014
摘要： A bumping process for a light emitting diode (LED) chip is provided. Firstly, a LED chip with a plurality of electrodes is provided, then a pattern plate having a plurality of openings is disposed on the LED chip, and the electrodes are correspondingly exposed by the openings. Then, a plurality of posts can be formed over the exposed electrodes by printing. After the printing process, the pattern plate is lifted and a reflow process is performed to the posts. The posts are formed by a printing process, the bumping process is less time-consuming and with lower costs and the height and the composition of the bumps con be precisely controlled, thus improving the reliability of LED die package structures.
摘要翻译：提供了用于发光二极管（LED）芯片的碰撞处理。首先，提供具有多个电极的LED芯片，然后在LED芯片上设置具有多个开口的图案板，并且通过开口相应地露出电极。然后，可以通过印刷在曝光的电极上形成多个柱。在印刷过程之后，提升图案板并对柱进行回流处理。该柱由印刷工艺形成，凸块工艺耗时少，成本低，凸块的高度和组成被精确控制，提高了LED管芯封装结构的可靠性。

32. 发明申请

US20050127485A1 Light-emitting diode package structure 有权
标题翻译：发光二极管封装结构
公开(公告)号：US20050127485A1
公开(公告)日：2005-06-16
申请号：US10826003
申请日：2004-04-16
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L23/02 , H01L25/16 , H01L29/18 , H01L33/60 , H01L33/62 , H01L33/00
CPC分类号： H01L33/62 , H01L25/167 , H01L33/60 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01079 , H01L2924/12041 , H01L2924/3025 , H01L2224/05599
摘要： A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.
摘要翻译：提供了一种发光二极管封装结构。发光二极管封装包括绝缘子安装座，第一图案化导电反射膜，第二图案化导电反射膜和发光二极管芯片。绝缘子安装座在其中具有第一表面和空腔。第一和第二图案化的导电反射膜设置在第一表面的一部分，空腔的侧壁的一部分和空腔的底表面的一部分上。发光二极管芯片设置在绝缘子安装座的腔内。发光二极管具有一对电极。电极分别电连接到第一和第二图案化导电反射膜。由于本发明的发光二极管结构具有图案化的导电反射膜，所以发光二极管的效率提高。

33. 发明申请

US20050017262A1 [LED DEVICE, FLIP-CHIP LED PACKAGE AND LIGHT REFLECTING STRUCTURE] 有权
标题翻译： [LED设备，FLIP-CHIP LED封装和光反射结构]
公开(公告)号：US20050017262A1
公开(公告)日：2005-01-27
申请号：US10708203
申请日：2004-02-16
申请人： SHIH-CHANG SHEI , JINN-KONG SHEU
发明人： SHIH-CHANG SHEI , JINN-KONG SHEU
IPC分类号： H01L21/00 , H01L33/04 , H01L33/40 , H01L33/42 , H01L33/46 , H01L33/00
CPC分类号： H01L33/46 , H01L33/04 , H01L33/405 , H01L33/42
摘要： A light emitting diode (LED) device is provided. The LED device includes a device substrate, a first doped layer of a first conductivity type, a light emitting layer, a second doped layer of a second conductivity type, a transparent conductive oxide layer, a reflecting layer and two electrodes. The first doped layer is deposited on the device substrate, the light emitting layer is deposited on a portion of the first doped layer, and the second doped layer is deposited on the light emitting layer. The first and the second doped layers are comprised of III-V semiconductor material respectively. The transparent conductive oxide layer is deposited on the second doped layer, and the reflecting layer is deposited on the transparent conductive oxide layer. The two electrodes are deposited on the reflecting layer and the first doped layer respectively.
摘要翻译：提供了一种发光二极管（LED）装置。 LED器件包括器件衬底，第一导电类型的第一掺杂层，发光层，第二导电类型的第二掺杂层，透明导电氧化物层，反射层和两个电极。第一掺杂层沉积在器件衬底上，发光层沉积在第一掺杂层的一部分上，第二掺杂层沉积在发光层上。第一和第二掺杂层分别由III-V半导体材料组成。透明导电氧化物层沉积在第二掺杂层上，反射层沉积在透明导电氧化物层上。两个电极分别沉积在反射层和第一掺杂层上。

34. 发明申请

US20050012113A1 [UV PHOTODETECTOR] 审中-公开
标题翻译： [紫外线照相机]
公开(公告)号：US20050012113A1
公开(公告)日：2005-01-20
申请号：US10707084
申请日：2003-11-20
申请人： JINN-KONG SHEU , WEI-CHIH LAI
发明人： JINN-KONG SHEU , WEI-CHIH LAI
IPC分类号： G01J1/42 , H01L31/0248 , H01L31/0304 , H01L31/0328 , H01L31/108 , H01L31/109
CPC分类号： H01L31/1085 , H01L31/03046 , Y02E10/544 , Y02P70/521
摘要： An UV photo-detector having a GaN-based interlayer is provided. Because of the excellent insulating property of the GaN-based interlayer and an excellent Schottky contact between the GaN-based interlayer and electrodes of the device, the leakage current of the device is substantially reduced. For example, the material of the GaN-based interlayer includes AlxInyGa1−x−yN, in which x≧0, y≧0, 1≧x+y. The GaN-based interlayer described above is manufactured without requiring a high temperature treatment process after the epitaxy process, and thus the process flow is simplified. Therefore, an UV photodetector having an excellent performance is obtained.
摘要翻译：提供具有GaN基中间层的UV光检测器。由于GaN基中间层具有优异的绝缘性能，并且GaN基中间层和器件的电极之间具有优异的肖特基接触，所以器件的漏电流明显降低。例如，GaN基中间层的材料包括Al x In y Ga 1-x-y N，其中x> = 0，y> = 0,1，= x + y。制造上述GaN基夹层，而不需要在外延工艺之后的高温处理工艺，因此简化了工艺流程。因此，获得了具有优异性能的紫外光检测器。

35. 发明授权

US06712478B2 Light emitting diode 有权
标题翻译：发光二极管
公开(公告)号：US06712478B2
公开(公告)日：2004-03-30
申请号：US10346843
申请日：2003-01-16
申请人： Jinn-Kong Sheu , Daniel Kuo , Samuel Hsu
发明人： Jinn-Kong Sheu , Daniel Kuo , Samuel Hsu
IPC分类号： H01L2715
CPC分类号： H01L33/32 , B82Y20/00 , H01L33/04
摘要： A light emitting diode with strained layer superlatices (SLS) crystal structure is formed on a substrate. A nucleation layer and a buffer layer are sequentially formed on the substrate, so as to ease the crystal growth for the subsequent crystal growing process. An active layer is covered between an upper and a lower cladding layers. The active later include III-N group compound semiconductive material. A SLS contact layer is located on the upper cladding layer. A transparent electrode is located on the contact later to serve as an anode. Another electrode layer has contact with the buffer layer, and is separated from the lower and upper cladding layers.
摘要翻译：在衬底上形成具有应变层超晶格（SLS）晶体结构的发光二极管。在基板上依次形成成核层和缓冲层，以便于随后的晶体生长工艺中的晶体生长。有源层被覆盖在上部和下部包层之间。活性后者包括III-N族化合物半导体材料。 SLS接触层位于上覆层上。透明电极稍后位于触点上用作阳极。另一个电极层与缓冲层接触，并与下包层和上覆层分离。

36. 发明授权

US08772825B2 Stacked semiconductor device and a method of manufacturing the same 有权
标题翻译：叠层半导体器件及其制造方法
公开(公告)号：US08772825B2
公开(公告)日：2014-07-08
申请号：US13618479
申请日：2012-09-14
申请人： Jinn Kong Sheu , Wei-Chih Lai
发明人： Jinn Kong Sheu , Wei-Chih Lai
IPC分类号： H01L33/08 , H01L33/16 , H01L33/22
CPC分类号： H01L31/03044 , H01L31/03048 , H01L31/036 , H01L31/06 , H01L33/04 , H01L33/08 , Y02E10/544 , Y02P70/521
摘要： A stacked semiconductor device and an associated manufacturing method are disclosed. A first semiconductor unit having a first surface, which is defined as being not a polar plane, is provided. At least one pit is formed on the first surface, and the pit has a second surface that lies at an angle relative to the first surface. A polarization enhanced tunnel junction is formed on the second surface, and a second semiconductor unit is formed above the tunnel junction.
摘要翻译：公开了一种叠层半导体器件及相关的制造方法。提供具有被定义为不是极性平面的第一表面的第一半导体单元。在第一表面上形成至少一个凹坑，并且凹坑具有相对于第一表面成一定角度的第二表面。在第二表面上形成极化增强的隧道结，在隧道结上方形成第二半导体单元。

37. 发明申请

US20140008613A1 STACKED SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME 有权
标题翻译：堆叠式半导体器件及其制造方法
公开(公告)号：US20140008613A1
公开(公告)日：2014-01-09
申请号：US13618479
申请日：2012-09-14
申请人： Jinn Kong Sheu , Wei-Chih Lai
发明人： Jinn Kong Sheu , Wei-Chih Lai
IPC分类号： H01L29/15 , H01L21/20
CPC分类号： H01L31/03044 , H01L31/03048 , H01L31/036 , H01L31/06 , H01L33/04 , H01L33/08 , Y02E10/544 , Y02P70/521
摘要： A stacked semiconductor device and an associated manufacturing method are disclosed. A first semiconductor unit having a first surface, which is defined as being not a polar plane, is provided. At least one pit is formed on the first surface, and the pit has a second surface that lies at an angle relative to the first surface. A polarization enhanced tunnel junction is formed on the second surface, and a second semiconductor unit is formed above the tunnel junction.
摘要翻译：公开了一种叠层半导体器件及相关的制造方法。提供具有被定义为不是极性平面的第一表面的第一半导体单元。在第一表面上形成至少一个凹坑，并且凹坑具有相对于第一表面成一定角度的第二表面。在第二表面上形成极化增强的隧道结，在隧道结上方形成第二半导体单元。

38. 发明授权

US07674642B2 Method of fabricating linear cascade high-speed green light emitting diode 有权
标题翻译：制造线性级联高速绿色发光二极管的方法
公开(公告)号：US07674642B2
公开(公告)日：2010-03-09
申请号：US11984335
申请日：2007-11-16
申请人： Jin-Wei Shi , Jinn-Kong Sheu , Mao-Jen Wu , Chun-Kai Wang , Cheng-Hiong Chen , Jen-Inn Chyi
发明人： Jin-Wei Shi , Jinn-Kong Sheu , Mao-Jen Wu , Chun-Kai Wang , Cheng-Hiong Chen , Jen-Inn Chyi
IPC分类号： H01L21/00
CPC分类号： H01L27/153 , H01L33/025 , H01L33/32
摘要： Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided.
摘要翻译：砷化镓（GaAs）的绿色发光二极管（LED）串联连接。串联连接具有较小的传输衰减和宽带宽。 GaAs LED具有很大的正向偏压，因此不需要额外的驱动电流和复杂的谐振腔外延层。因此，本发明具有高速度，高效率和高功率，同时避免了不均匀的电流分布。

39. 发明授权

US07482696B2 Light-emitting diode package structure 有权
标题翻译：发光二极管封装结构
公开(公告)号：US07482696B2
公开(公告)日：2009-01-27
申请号：US10826003
申请日：2004-04-16
申请人： Shih-Chang Shei , Jinn-Kong Sheu
发明人： Shih-Chang Shei , Jinn-Kong Sheu
IPC分类号： H01L29/18
CPC分类号： H01L33/62 , H01L25/167 , H01L33/60 , H01L2224/05568 , H01L2224/05573 , H01L2224/16 , H01L2924/00014 , H01L2924/01004 , H01L2924/01079 , H01L2924/12041 , H01L2924/3025 , H01L2224/05599
摘要： A light-emitting diode package structure is provided. The light-emitting diode package comprises an insulating sub-mount, a first patterned conductive-reflective film, a second patterned conductive-reflective film and a light-emitting diode chip. The insulating sub-mount has a first surface and a cavity therein. The first and the second patterned conductive-reflective film are set over a portion of the first surface, a portion of the sidewalls of the cavity and a portion of the bottom surface of the cavity. The light-emitting diode chip is set up inside the cavity of the insulating sub-mount. The light-emitting diode has a pair of electrodes. The electrodes are electrically connected to the first and the second patterned conductive-reflective film respectively. Since the light-emitting diode structure of this invention incorporates the patterned conductive-reflective films, efficiency of the light-emitting diode is increased.
摘要翻译：提供了一种发光二极管封装结构。发光二极管封装包括绝缘子安装座，第一图案化导电反射膜，第二图案化导电反射膜和发光二极管芯片。绝缘子安装座在其中具有第一表面和空腔。第一和第二图案化的导电反射膜设置在第一表面的一部分，空腔的侧壁的一部分和空腔的底表面的一部分上。发光二极管芯片设置在绝缘子安装座的腔内。发光二极管具有一对电极。电极分别电连接到第一和第二图案化导电反射膜。由于本发明的发光二极管结构具有图案化的导电反射膜，所以发光二极管的效率提高。

40. 发明申请

US20080274573A1 Method of fabricating linear cascade high-speed green light emitting diode 有权
标题翻译：制造线性级联高速绿色发光二极管的方法
公开(公告)号：US20080274573A1
公开(公告)日：2008-11-06
申请号：US11984335
申请日：2007-11-16
申请人： Jin-Wei Shi , Jinn-Kong Sheu , Mao-Jen Wu , Chun-Kai Wang , C.-H. Chen , Jen-Inn Chyi
发明人： Jin-Wei Shi , Jinn-Kong Sheu , Mao-Jen Wu , Chun-Kai Wang , C.-H. Chen , Jen-Inn Chyi
IPC分类号： H01L33/00
CPC分类号： H01L27/153 , H01L33/025 , H01L33/32
摘要： Green light emitting diodes (LED) of gallium arsenide (GaAs) are series-connected. The series connection has a small transmission attenuation and a wide bandwidth. The GaAs LED has a big forward bias and so neither extra driving current nor complex resonant-cavity epitaxy layer is needed. Hence, the present invention has a high velocity, a high efficiency and a high power while an uneven current distribution is avoided.
摘要翻译：砷化镓（GaAs）的绿色发光二极管（LED）串联连接。串联连接具有较小的传输衰减和宽带宽。 GaAs LED具有很大的正向偏压，因此不需要额外的驱动电流和复杂的谐振腔外延层。因此，本发明具有高速度，高效率和高功率，同时避免了不均匀的电流分布。

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