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21. 发明授权

US5750443A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US5750443A
公开(公告)日：1998-05-12
申请号：US793593
申请日：1997-03-03
申请人： Kazuhisa Sakamoto
发明人： Kazuhisa Sakamoto
IPC分类号： H01L29/73 , H01L21/263 , H01L21/331 , H01L21/336 , H01L29/30 , H01L29/732 , H01L29/74 , H01L29/78 , H01L29/861 , H01L21/324
CPC分类号： H01L29/66295 , H01L21/263 , Y10S148/003 , Y10S148/004 , Y10S148/08 , Y10S148/09 , Y10S148/092
摘要： Disclosed is a method of manufacturing a semiconductor device wherein a corpuscular beam is radiated to a semiconductor substrate to create crystal defects therein. The semiconductor substrate is subjected to a heat treatment, e.g. for 1 second to 60 minutes, wherein rapid heating-up, e.g. raising temperature to 550.degree. to 850.degree. C. within 10 minutes, is done in a process prior to that of carrying out of the radiation with a corpuscular beam. By doing so, there is provided a semiconductor device which is free from degradation in electrical characteristics such as current amplification factor and has an increased switching speed, even where crystal defects are created through the radiation of corpuscular beam such as an electron beam to shorten the carrier lifetime. Thus, the inventive semiconductor device is satisfied by both requirements of switching speed and electrical characteristic.
摘要翻译： PCT No.PCT / JP96 / 01906 371日期1997年3月3日 102（e）1997年3月3日PCT PCT 1996年7月9日PCT公布。公开号WO97 / 03458 日期1997年1月30日公开是制造半导体器件的方法，其中将红色光束照射到半导体衬底以在其中产生晶体缺陷。对半导体衬底进行热处理，例如， 1秒至60分钟，其中快速加热，例如，在10分钟内将温度升至550℃至850℃，在用红细胞束进行辐射之前的过程中进行。通过这样做，提供了一种半导体器件，其即使在通过诸如电子束的粒子束的辐射产生晶体缺陷的情况下，也不会有诸如电流放大因子等电特性的劣化，并且具有增加的切换速度，以缩短载体寿命。因此，本发明的半导体器件通过开关速度和电特性的要求都得到满足。

22. 发明授权

US5593902A Method of making photodiodes for low dark current operation having geometric enhancement 失效
标题翻译：制造具有几何增强的低暗电流操作的光电二极管的方法
公开(公告)号：US5593902A
公开(公告)日：1997-01-14
申请号：US247747
申请日：1994-05-23
申请人： Peter D. Dreiske , Arthur M. Turner , David I. Forehand
发明人： Peter D. Dreiske , Arthur M. Turner , David I. Forehand
IPC分类号： H01L31/0352 , H01L31/103 , H01L31/18
CPC分类号： H01L31/03529 , H01L31/1032 , Y02E10/50 , Y10S148/08 , Y10S257/91 , Y10S438/965
摘要： A substantial portion of the material at the pn junction (27) of the photodiode (37, 41) having an implanted region extending to a surface thereof is selectively removed (39), leaving a very small junction region (35, 43) with the remainder of the p-type (23) and n-type (25) material of each photodiode being spaced apart or electrically isolated at what was originally the junction. In the ion implanted n-type on p-type approach, the majority of the signal is created in the implanted n-type region while the majority of the noise is generated in the p-type region. By selectively removing p-type material, n-type material or both from the pn junction of the diode or otherwise electrically isolating most of the p-type and n-type regions from each other at the pn junction and thereby minimizing the pn junction area, noise is greatly reduced without affecting the signal response of the photodiode. With this approach, the present implant technology can still be used with the achievement of high temperature operational capability above 77.degree. Kelvin and up to about 110.degree. Kelvin.
摘要翻译：在具有延伸到其表面的注入区域的光电二极管（37,41）的pn结（27）处的大部分材料被选择性地去除（39），留下非常小的结区域（35,43），其中每个光电二极管的p型（23）和n型（25）材料的剩余部分在原来的结处间隔开或电隔离。在离子注入n型p型方法中，大部分信号在植入的n型区域中产生，而大部分噪声在p型区域中产生。通过从二极管的pn结选择性地去除p型材料，n型材料或两者，或者在pn结处将大部分p型和n型区域彼此电绝缘，从而使pn结面积最小化，噪声大大降低，而不影响光电二极管的信号响应。通过这种方法，目前的植入技术仍然可以用于实现高于77°开尔文和高达约110开氏度的高温操作能力。

23. 发明授权

US4142925A Method of making silicon-insulator-polysilicon infrared image device utilizing epitaxial deposition and selective etching 失效
标题翻译：利用外延沉积和选择性蚀刻制造硅绝缘体 - 多晶硅红外图像器件的方法
公开(公告)号：US4142925A
公开(公告)日：1979-03-06
申请号：US896069
申请日：1978-04-13
申请人： Gerard J. King , Joseph F. Martino, Jr.
发明人： Gerard J. King , Joseph F. Martino, Jr.
IPC分类号： H01L21/762 , H01L21/764 , H01L21/84 , H01L27/148 , H01L21/20 , H01L27/14
CPC分类号： H01L21/84 , H01L21/76297 , H01L21/764 , H01L27/14881 , Y10S148/053 , Y10S148/08 , Y10S148/122 , Y10S148/135 , Y10S148/15
摘要： A layer of epitaxial silicon is grown on a silicon growth substrate, a thin layer of silicon dioxide or other suitable insulator is grown (in the case of silicon dioxide) or deposited (for other insulators) on the epitaxial layer, and a thick layer of polysilicon is grown on the dioxide layer. The silicon growth substrate is then removed, and the epitaxial layer is etched to form islands on the insulator layer. Some of the islands are doped to form an array of infrared sensitive detectors, and a large island is doped to act as CCD region. Electrical leads are fabricated, some to provide drive and output lines for the CCDs, other to provide connections of the detectors to respective CCDs, and yet others to provide common leads for the detectors.
摘要翻译：在硅生长衬底上生长一层外延硅，在外延层上生长二氧化硅或其它合适的绝缘体（在二氧化硅的情况下）或沉积（用于其它绝缘体），并且将厚层多晶硅生长在二氧化硅层上。然后去除硅生长衬底，并且蚀刻外延层以在绝缘体层上形成岛。一些岛被掺杂以形成红外敏感检测器的阵列，并且大岛被掺杂以充当CCD区域。制造电引线，一些用于为CCD提供驱动和输出线，另外提供检测器到相应CCD的连接，还有一些用于为检测器提供公共引线。

24. 发明授权

US3615856A Germanium-tin alloy infrared detector 失效
标题翻译：锗 - 钛合金红外探测器
公开(公告)号：US3615856A
公开(公告)日：1971-10-26
申请号：US3615856D
申请日：1969-04-14
申请人： RCA CORP
发明人： SOMMERS HENRY STERN JR
IPC分类号： H01L21/00 , H01L31/00 , H01L31/10 , H01L15/02
CPC分类号： H01L31/00 , H01L21/00 , H01L31/10 , Y10S148/002 , Y10S148/08 , Y10S148/107
摘要： An infrared radiation detector useful at room temperature includes an epitaxial, germanium-tin alloy grown by liquid phase epitaxy with a concentration of tin greater than 2.5 atomic percent.

25. 发明授权

US3554818A Indium antimonide infrared detector and process for making the same 失效
标题翻译：印度尼西亚红外线检测器及其制造方法
公开(公告)号：US3554818A
公开(公告)日：1971-01-12
申请号：US3554818D
申请日：1968-04-25
申请人： AVCO CORP
发明人： LAMBERT VERNON L , GRI NORMAN J
IPC分类号： G01J5/28 , H01L21/00 , H01L23/29 , H01L27/00 , H01L31/00 , H01L31/103 , H01L7/36 , H01L7/44
CPC分类号： H01L31/1035 , G01J5/28 , H01L21/00 , H01L23/291 , H01L24/05 , H01L27/00 , H01L31/00 , H01L2224/05552 , H01L2224/45144 , H01L2224/48463 , H01L2224/49107 , H01L2924/14 , Y10S148/005 , Y10S148/02 , Y10S148/022 , Y10S148/051 , Y10S148/065 , Y10S148/08 , Y10S148/118 , Y10S148/12 , H01L2924/00
摘要： THE INVENTION HERE DISCLOSED IS AN INDIUM ANTIMONIDE INFRARED DETECTOR AND A PROCESS FOR MAKING THE SAME. A DIFFUSION PROCESS YIELDS A VERY SHALLOW P-REGION ON AN N-TYPE INDIUM ANTIMONIDE SUBSTRATE. THIS LAYER HAS A THICKNESS OF 1.0 TO .5 MICRON AND HAS A HIGH CONCENTRATION OF ACCEPTORS, PROVIDING A VERY EFFICIENT COLLECTION REGION OF CARRIER CREATED BY PHOTON ABSORPTION. THE LAYER IS OF CADMIUM OR ZINC AND THE CONCENTRATION IS WITHIN A RANGE SUCH THAT WHILE LATTICE DAMAGE OCCURS DETECTOR OPERATION IS NOT IMPAIRED. THE LAYER IS SO SHALLOW THE MOST OF THE CARRIER CREATED BY PHOTON ABSORPTION ARE COLLECTED.

26. 发明授权

US3275557A Method of making mercury-doped germanium semiconductor crystals 失效
标题翻译：制造掺杂汞的锗半导体晶体的方法
公开(公告)号：US3275557A
公开(公告)日：1966-09-27
申请号：US32329863
申请日：1963-11-13
申请人： PHILIPS CORP
发明人： HUGHES RAY C
IPC分类号： C30B13/12 , H01L21/00
CPC分类号： C30B13/12 , H01L21/00 , Y10S117/906 , Y10S117/918 , Y10S148/08

27. 发明授权

US5646066A Method for forming electrical contact to the optical coating of an infrared detector from the backside of the detector 失效
标题翻译：从检测器的背面形成与红外探测器的光学涂层的电接触的方法
公开(公告)号：US5646066A
公开(公告)日：1997-07-08
申请号：US396944
申请日：1995-03-01
申请人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
发明人： Steven N. Frank , James F. Belcher , Charles E. Stanford , Robert A. Owen , Robert J. S. Kyle
IPC分类号： H01L31/0216 , H01L31/0224 , H01L21/44
CPC分类号： H01L31/022408 , H01L31/02161 , Y10S148/08 , Y10S148/135 , Y10S438/977
摘要： This is a system and method of forming an electrical contact to the optical coating of an infrared detector. The method may comprise: forming thermal isolation trenches 22 in a substrate 20; depositing a trench filler 24 in the thermal isolation trenches 22; depositing a common electrode layer 31 over the thermal isolation trenches 22; depositing an optical coating 26 above the common electrode layer 31; mechanically thinning the substrate to expose the trench filler 24; etching to remove the trench filler 24 in the bias contact area; depositing a contact metal 34 on the backside of the substrate 20, wherein the contact metal 34 connects to the common electrode layer 31 at bias contact areas 34 around a periphery of the thermal isolation trenches; and etching the contact metal 34 and the trench filler 24 to form pixel mesas of the contact metal 34 and the substrate 20. Bias contact vias 23 may be formed in the bias contact areas and then filled with bias contact metal 49. Alternately, the bias contact vias may also be filled with the contact metal 34. The thermal isolation trenches may be formed by laser vaporization, ion milling or other equivalent methods. In addition, an elevation layer may be formed between the optical coating and the substrate to provide greater tolerances for ion milling. The elevation layer may be filled with a trench filler and then removed after milling. Alternately, the elevation layer may be filled with a metal 49 to connect the bias contact metal to the common electrode in the bias contact areas.
摘要翻译：这是形成与红外检测器的光学涂层的电接触的系统和方法。该方法可以包括：在衬底20中形成热隔离沟槽22; 在热隔离槽22中沉积沟槽填料24; 在热隔离槽22上沉积公共电极层31; 在公共电极层31上沉积光学涂层26; 机械地使衬底变薄以暴露沟槽填料24; 蚀刻以去除偏压接触区域中的沟槽填料24; 在衬底20的背面沉积接触金属34，其中接触金属34在围绕热隔离沟槽的周边的偏置接触区域34处连接到公共电极层31; 并且蚀刻接触金属34和沟槽填充剂24以形成接触金属34和衬底20的像素台面。可以在偏置接触区域中形成偏置接触通孔23，然后用偏置接触金属49填充。或者，偏置接触通孔也可以用接触金属34填充。热隔离沟槽可以通过激光蒸发，离子研磨或其它等效方法形成。此外，可以在光学涂层和基板之间形成升高层，以提供更大的离子铣削公差。仰角层可以填充沟槽填料，然后在研磨后除去。或者，仰角层可以用金属49填充，以将偏置接触金属连接到偏置接触区域中的公共电极。

28. 发明授权

US5182217A Method of fabricating a trapping-mode 失效
标题翻译：捕获模式的制作方法
公开(公告)号：US5182217A
公开(公告)日：1993-01-26
申请号：US740570
申请日：1991-08-02
申请人： Paul R. Norton
发明人： Paul R. Norton
IPC分类号： H01L21/368 , H01L31/0296 , H01L31/103 , H01L31/109
CPC分类号： H01L31/109 , H01L21/02411 , H01L21/0248 , H01L21/0251 , H01L21/02562 , H01L21/02625 , H01L31/02966 , H01L31/1032 , H01L21/02576 , H01L21/02579 , Y10S148/064 , Y10S148/08
摘要： Photodetectors that produce detectivities close to the theoretical maximum detectivity include an electrically insulating substrate carrying a body of semiconductor material that includes a region of first conductivity type and a region of second conductivity type where the region of first conductivity type overlies and covers the junction with the region of second conductivity type and where the junction between the first and second regions separates minority carriers in the region of second conductivity type from majority carriers in the region of first conductivity type. These photodetectors produce high detectivities where radiation incident on the detectors has wavelengths in the range of about 1 to about 25 microns or more, particularly under low background conditions.
摘要翻译：产生接近理论最大检测率的检测率的光电检测器包括承载半导体材料体的电绝缘基板，其包括第一导电类型的区域和第二导电类型的区域，其中第一导电类型的区域覆盖并覆盖与第二导电类型的区域，并且其中第一和第二区域之间的结点将第二导电类型区域中的少数载流子与第一导电类型区域中的多数载流子分开。这些光电检测器产生高检测率，其中入射到检测器上的辐射波长在约1至约25微米或更大的范围内，特别是在低背景条件下。

29. 发明授权

US5173443A Method of manufacture of optically transparent electrically conductive semiconductor windows 失效
标题翻译：光学透明导电半导体窗口的制造方法
公开(公告)号：US5173443A
公开(公告)日：1992-12-22
申请号：US544772
申请日：1990-06-27
申请人： V. Warren Biricik , James M. Rowe , Paul Kraatz , John W. Tully , Wesley J. Thompson , Rudolph W. Modster
发明人： V. Warren Biricik , James M. Rowe , Paul Kraatz , John W. Tully , Wesley J. Thompson , Rudolph W. Modster
IPC分类号： G02B1/10
CPC分类号： G02B1/10 , Y10S148/056 , Y10S148/058 , Y10S148/08 , Y10S438/934
摘要： Methods are disclosed for making semiconductor windows which are transparent to light in the infrared range which have good electrical conductivity and are formed of a substrate material (11) having a semiconductor coating (14) having a dopant included therein. The coating is diffused, grown or deposited on one surface of the substrate and is controlled to obtain both low electrical resistivity and high infrared transmissivity. The coating can be formed of the same material as the substrate or can be a different material. Windows having particular thermal properties are formed utilizing zinc selenide and zinc sulfide as the substrate.
摘要翻译：公开了制造半导体窗的方法，所述半导体窗对于具有良好导电性的红外范围的光是透明的，并且由其中包含掺杂剂的半导体涂层（14）的基板材料（11）形成。涂层扩散，生长或沉积在衬底的一个表面上，并被控制以获得低电阻率和高红外透射率。涂层可以由与基底相同的材料形成，或者可以是不同的材料。具有特殊热性能的窗口是利用硒化锌和硫化锌作为基底形成的。

30. 发明授权

US4142198A Monolithic extrinsic silicon infrared detectors with an improved charge collection structure 失效
标题翻译：具有改进的电荷收集结构的单片非晶硅红外探测器
公开(公告)号：US4142198A
公开(公告)日：1979-02-27
申请号：US702548
申请日：1976-07-06
申请人： Ronald M. Finnila , Stephen C. Su
发明人： Ronald M. Finnila , Stephen C. Su
IPC分类号： H01L27/148 , H01L29/78 , G11C19/28 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14875 , Y10S148/08
摘要： There is disclosed an all silicon monolithic focal plane array of infrared detectors for image detection. The structure comprises an epitaxial layer grown on an extrinsically doped silicon substrate. The detectors are formed in and extend through the substrate, the material of which is sensitive to specific wavelength infrared signals according to the dopant used in the substrate. The collection of charges takes place on a buried layer formed around a portion of the epitaxial layer-substrate interface, and the charges are then transferred through a surface layer of the same conductivity type to the surface of the epitaxial layer. The signal readout function is performed by a charge coupled device shift register constructed in the epitaxial layer by providing selectively spaced electrodes in an insulating layer. Carriers generated in the detector by incident infrared radiation are collected into the buried layer and then pass through the surface layer, are injected therefrom into the CCD shift register and are detected at the output. The monolithic construction and the use of an epitaxial layer to form the CCD shift register result in high yield and high efficiency devices. The planar surface of the device improves the aluminum step coverage for a more reliable device, and the use of the buried layer improves the fill factor of the detector.
摘要翻译：公开了用于图像检测的全硅单片焦平面阵列红外探测器。该结构包括在外掺硅衬底上生长的外延层。检测器形成并延伸穿过衬底，根据衬底中使用的掺杂剂，其材料对特定波长的红外信号敏感。电荷的收集发生在围绕外延层 - 衬底界面的一部分形成的掩埋层上，然后电荷通过相同导电类型的表面层转移到外延层的表面。通过在绝缘层中提供选择性间隔的电极，通过在外延层中构造的电荷耦合器件移位寄存器来执行信号读出功能。通过入射红外辐射在检测器中产生的载体被收集到掩埋层中，然后通过表面层，从其中注入到CCD移位寄存器中，并在输出端检测。单片结构和使用外延层形成CCD移位寄存器导致高产量和高效率器件。器件的平面可以提高铝合金台阶的覆盖范围，使其更可靠，并且掩埋层的使用提高了检测器的填充系数。

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