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21. 发明专利

JP2010123746A Optical semiconductor device, lighting device, and display device 审中-公开
标题翻译：光学半导体器件，照明器件和显示器件
公开(公告)号：JP2010123746A
公开(公告)日：2010-06-03
申请号：JP2008295845
申请日：2008-11-19
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , OKADA YASUHIDE , WATANABE NAOTAKE
IPC分类号： H01L33/48 , F21S2/00 , F21Y101/02
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device which is a thin side-surface light emission type used, for example, as a back light source of a liquid crystal display panel and has an improved light extraction efficiency, and to provide a lighting device and a display device that use the optical semiconductor device as a light source. SOLUTION: In the optical semiconductor device, a planate mounting part 3 of an inner lead 2 is formed in a quadrangular shape formed of first sides 3a and second sides 3b longer than the first sides, an optical semiconductor element 1 is mounted on the planate mounting part, and a reflecting member 4 is projectingly formed on a main-surface side and a non-main-surface side of the planate mounting part. An opening 5 in a quadrangular shape whose inner surfaces are parallel to the first sides and second sides is formed through the reflecting member, and a sealing member 6 seals the opening etc. The two inner surfaces of the opening which are parallel to the second sides serve as light guide surface parts 15b, and the two inner surfaces of the opening parallel to the first sides serve as main light reflecting surface parts 15a which are incliningly formed in such a way that distance between them is gradually spread in the projecting direction of the opening. On the principal surface of the planate mounting part, auxiliary light reflecting parts 7 are incliningly formed in such a way that distance between them is gradually spread in the projection direction of the opening between the optical semiconductor element and the main light reflecting surface parts of the reflection member, the auxiliary light reflecting parts being parallel to the second sides, and shorter in height than the main light reflecting surface parts. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供一种作为液晶显示面板的背光源使用的薄型侧面发光型的光半导体装置，其具有提高的光提取效率，并且提供使用光半导体装置作为光源的照明装置和显示装置。解决方案：在光学半导体器件中，内引线2的平面安装部3形成为由比第一侧长的第一侧3a和第二侧3b形成的四边形，光半导体元件1安装在平面安装部分和反射部件4突出地形成在平面安装部分的主表面侧和非主表面侧上。通过反射构件形成内表面平行于第一侧和第二侧的四边形的开口5，密封构件6密封开口等。开口的两个内表面平行于第二侧用作导光表面部分15b，并且平行于第一侧面的开口的两个内表面用作主光反射表面部分15a，它们以这样的方式倾斜地形成，使得它们之间的距离在开幕。在平面安装部分的主表面上，辅助光反射部分7以这样的方式倾斜地形成，使得它们之间的距离在光半导体元件和光学半导体元件的主光反射表面部分之间的开口的投影方向上逐渐扩展反射构件，辅助光反射部分平行于第二侧，并且比主光反射表面部分的高度更短。版权所有（C）2010，JPO＆INPIT

22. 发明专利

JP2008294071A Optical semiconductor device, lighting device, and display apparatus 审中-公开
标题翻译：光学半导体器件，照明器件和显示器
公开(公告)号：JP2008294071A
公开(公告)日：2008-12-04
申请号：JP2007135716
申请日：2007-05-22
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO
IPC分类号： H01L33/56 , H01L33/60 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device which improves the emission efficiency of an optical semiconductor element while causing reflection openings of a reflecting member to function surely as reflectors and is miniaturized in outer shape as much as possible, and to provide a lighting device and a display apparatus that have the optical semiconductor device. SOLUTION: A plurality of optical semiconductor elements S1 are mounted at given intervals on an inner lead portion 1. The reflecting member 2 made of a white resin material is formed on the inner lead portion 1, where the reflecting member 2 has the reflection openings 3 that are widened in a reversely tapered form from the peripheries of the optical semiconductor elements S1. The reflection openings 3 of the reflecting member 2 and the optical semiconductor elements S1 are sealed with a sealing member 6 having transparency. Arrangement pitches between the optical semiconductor elements S1 are reduced so that adjacent reflection openings 3 overlap each other, and trapezoid portions 4 are formed as cutouts on overlapping portions between adjacent reflection openings 3. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：解决的问题：提供一种提高光半导体元件的发光效率的光半导体器件，同时使反射部件的反射开口能够确实地作为反射器起作用并且尽可能地外形小型化，并且提供具有光学半导体器件的照明装置和显示装置。解决方案：多个光学半导体元件S1以规定的间隔安装在内部引线部分1上。由内部引线部分1形成由白色树脂材料制成的反射部件2，其中反射部件2具有从光半导体元件S1的周边以反锥形的形式加宽的反射开口3。反射构件2的反射开口3和光半导体元件S1用具有透明性的密封构件6密封。光学半导体元件S1之间的配置间距减小，使得相邻的反射开口3彼此重叠，并且梯形部分4形成为在相邻反射开口3之间的重叠部分上的切口。版权所有：（C）2009，JPO＆INPIT

23. 发明专利

JP2004087611A Semiconductor device manufacturing method and semiconductor device manufacturing apparatus 审中-公开
公开(公告)号：JP2004087611A
公开(公告)日：2004-03-18
申请号：JP2002244017
申请日：2002-08-23
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , KOMATSU TETSUO
IPC分类号： H01L21/60
CPC分类号： H01L24/75 , H01L24/27 , H01L24/29 , H01L24/743 , H01L24/83 , H01L2224/16225 , H01L2224/32225 , H01L2224/73204 , H01L2224/75 , H01L2224/7515 , H01L2224/75301 , H01L2224/75745 , H01L2224/83192 , H01L2224/83194 , H01L2924/01012 , H01L2924/01019 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device with which time required for mounting a semiconductor element is shortened without rolling air bubbles into a sealing resin.
SOLUTION: The semiconductor device manufacturing method for flip chip packaging of a semiconductor element I on a wafer W is provided with a feeding step for feeding a liquid-state sealing resin 11 onto a front surface of the wafer W and a pressing step for holding the semiconductor element I with a bonding head 4 and pressing the wafer W over the sealing resin. In the pressing step, the semiconductor element I is contacted to the sealing resin at a first speed and the semiconductor element I is moved down at a second speed higher than the first speed to be bonded on the front surface of the wafer W.
COPYRIGHT: (C)2004,JPO

24. 发明专利

JP2013239730A Optical semiconductor device 有权
标题翻译：光学半导体器件
公开(公告)号：JP2013239730A
公开(公告)日：2013-11-28
申请号：JP2013147204
申请日：2013-07-16
申请人： Toshiba Corp , 株式会社東芝
发明人： KOIZUMI HIROSHI , OKADA YASUHIDE , OBATA SUSUMU , NAKA TOMOMICHI , HIGUCHI KAZUTO , SHIMOKAWA KAZUO , SUGIZAKI YOSHIAKI , KOJIMA AKIHIRO
IPC分类号： H01L33/50 , H01L33/54
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device which enables the mass production at low costs and also enables the downsizing at the same level as a semiconductor light emitting element.SOLUTION: An optical semiconductor device includes: a light emitting layer 2 including a semiconductor lamination body separated from a growth substrate; first and second electrodes 7a, 7b formed on a second main surface of the light emitting layer; a translucent layer 5 provided on a first main surface; a fluorescent layer provided on the translucent layer; first and second metal posts 8a, 8b provided on the first and second electrodes; and a sealing layer 10 which is provided on the second main surface and is made of a material shielding light emitted from the light emitting layer, the sealing layer sealing the first and second metal posts and covering a side surface of the light emitting layer. A side surface of the translucent layer has a portion that is not covered by the fluorescent layer and the sealing layer. A part of the light emitted from the light emitting layer penetrates the translucent layer and is subject to wavelength conversion in the fluorescent layer to be emitted to the exterior. The other part of the light emitted from the light emitting layer penetrates the translucent layer to be emitted to the exterior from the side surface of the translucent layer.
摘要翻译：要解决的问题：提供一种能够以低成本进行批量生产并且还能够使与半导体发光元件处于相同水平的小型化的光学半导体器件。解决方案：一种光学半导体器件包括：发光层2，包括：半导体层叠体与生长衬底分离; 形成在发光层的第二主表面上的第一和第二电极7a，7b; 设置在第一主表面上的半透明层5; 设置在所述半透明层上的荧光层; 设置在第一和第二电极上的第一和第二金属柱8a，8b; 以及密封层10，其设置在第二主表面上并且由屏蔽从发光层发射的光的材料制成，密封层密封第一和第二金属柱并覆盖发光层的侧表面。半透明层的侧面具有不被荧光层和密封层覆盖的部分。从发光层发射的光的一部分穿透半透明层并在荧光层中进行波长转换以发射到外部。从发光层发射的光的另一部分透过半透明层，从半透明层的侧面发射到外部。

25. 发明专利

JP2013065773A Semiconductor light-emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2013065773A
公开(公告)日：2013-04-11
申请号：JP2011204529
申请日：2011-09-20
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , OBATA SUSUMU , HIGUCHI KAZUTO
IPC分类号： H01L33/10
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element having high efficiency.SOLUTION: A semiconductor light-emitting element includes a substrate, a stack, a first electrode, a second electrode, and a reflective layer. The substrate has a primary surface. The stack includes a first semiconductor layer, a light-emitting part, and a second semiconductor layer. The first semiconductor layer is provided on the primary surface, has a first portion and a second portion in juxtaposition with the first portion, and is a first conductivity type. The light-emitting part is provided on the second portion. The second semiconductor layer is provided on the light-emitting part and is a second conductivity type. The first electrode is provided on the first portion of the first semiconductor layer. The second electrode is provided on the second semiconductor layer. The reflective layer covers the side surfaces of the substrate and the side surfaces of the stack, and has reflectiveness to emission light emitted from the light-emitting part.
摘要翻译：要解决的问题：提供一种效率高的半导体发光元件。解决方案：半导体发光元件包括衬底，堆叠，第一电极，第二电极和反射层。基底具有主表面。堆叠包括第一半导体层，发光部分和第二半导体层。第一半导体层设置在主表面上，具有与第一部分并置的第一部分和第二部分，并且是第一导电类型。发光部设置在第二部分上。第二半导体层设置在发光部上，是第二导电型。第一电极设置在第一半导体层的第一部分上。第二电极设置在第二半导体层上。反射层覆盖基板的侧表面和叠层的侧表面，并且对从发光部分发射的发射光具有反射性。版权所有（C）2013，JPO＆INPIT

26. 发明专利

JP2012190991A Semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2012190991A
公开(公告)日：2012-10-04
申请号：JP2011052969
申请日：2011-03-10
申请人： Toshiba Corp , 株式会社東芝
发明人： KOMATSU IZURU , SHIMOKAWA KAZUO , ITO HISASHI , TATEYAMA KAZUKI
IPC分类号： H01L33/60 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/48465 , H01L2924/00014 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of suppressing time deterioration at a high output power.SOLUTION: A semiconductor light-emitting device according to an embodiment comprises: a light-emitting element configured to radiate emission light having a peak wavelength shorter than 493 nm; and a package containing the light-emitting element and including a terminal electrically connected to an electrode of the light-emitting element. The terminal contains aluminum with purity equal to or greater than 99.89% in a portion which reflects the emission light.
摘要翻译：解决的问题：提供能够抑制高输出功率下的时间劣化的半导体发光装置。解决方案：根据一个实施方案的半导体发光器件包括：发光元件，其被配置为辐射具有短于493nm的峰值波长的发射光; 以及包含发光元件并且包括电连接到发光元件的电极的端子的封装。在反射发光的部分，该终端含有纯度等于或大于99.89％的铝。版权所有（C）2013，JPO＆INPIT

27. 发明专利

JP2012069552A Semiconductor light-emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2012069552A
公开(公告)日：2012-04-05
申请号：JP2010210474
申请日：2010-09-21
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO
IPC分类号： H01L33/62
CPC分类号： H01L2224/48247 , H01L2224/73265
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device capable of improving extraction efficiency of light and capable of preventing temporal variation in optical characteristics.SOLUTION: A semiconductor light-emitting device comprises: a semiconductor light-emitting element 3 having a base 2, a first electrode 9 provided on a first surface, and a second electrode 10 provided on a second surface opposite to the first surface; and a junction portion 4 provided between the base and the second electrode. The junction portion has a resin portion. Conductors having conductivity and reflectors reflecting light emitted from the semiconductor light-emitting element are dispersed in the resin portion.
摘要翻译：解决的问题：提供能够提高光的提取效率并能够防止光学特性的时间变化的半导体发光装置。解决方案：半导体发光器件包括：具有基底2的半导体发光元件3，设置在第一表面上的第一电极9和设置在与第一表面相对的第二表面上的第二电极10 ; 以及设置在基部和第二电极之间的接合部4。接合部分具有树脂部分。具有导电性的导体和反射器，其反射从半导体发光元件发射的光分散在树脂部分中。版权所有（C）2012，JPO＆INPIT

28. 发明专利

JP2011223035A Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：JP2011223035A
公开(公告)日：2011-11-04
申请号：JP2011162573
申请日：2011-07-25
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , USHIJIMA AKIRA
IPC分类号： H01L21/52 , H01L33/62 , H01S5/022
CPC分类号： H01L24/32 , H01L2224/29 , H01L2224/29111 , H01L2224/29298 , H01L2224/83192 , H01L2224/83385 , H01L2924/00011 , H01L2924/00013 , H01L2924/01029 , H01L2924/0132 , H01L2924/01322 , H01L2924/014 , H01L2924/10156 , H01L2924/12041 , H01L2924/15787 , H01L2924/0105 , H01L2924/01079 , H01L2924/3512 , H01L2924/00 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929
摘要： PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device in which air bubbles generated at the junction between a semiconductor element and a substrate are reduced.SOLUTION: The method of manufacturing a semiconductor device includes a mounting step for mounting an LED chip 10 having a die-mount junction electrode 13 on a ceramic substrate 20. Said mounting step includes a step for supplying a solder paste 40 containing Au-Sn eutectic solder particles 41 on the ceramic substrate, a step for mounting the LED chip in which an Sn film 14 is formed on the die-mount junction electrode on the solder paste, and a step for joining the ceramic substrate and the LED chip by melting the Au-Sn eutectic solder particles and the Sn film.
摘要翻译：要解决的问题：提供一种半导体器件的制造方法，其中在半导体元件和衬底之间的结处产生的气泡减少。解决方案：制造半导体器件的方法包括用于将具有管芯安装接合电极13的LED芯片10安装在陶瓷基板20上的安装步骤。所述安装步骤包括提供包含Au的焊膏40的步骤 -Sn在陶瓷基板上的共晶焊料颗粒41，在焊膏上的芯片安装接合电极上安装形成有Sn膜14的LED芯片的步骤，以及用于接合陶瓷基板和LED芯片的步骤通过熔化Au-Sn共晶焊料颗粒和Sn膜。版权所有（C）2012，JPO＆INPIT

29. 发明专利

JP2010135693A Optical semiconductor device and method of manufacturing optical semiconductor device 有权
标题翻译：光学半导体器件及制造光学半导体器件的方法
公开(公告)号：JP2010135693A
公开(公告)日：2010-06-17
申请号：JP2008312453
申请日：2008-12-08
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , KOBARIGAWA TAKASHI , MIYAGI TAKESHI , HAPPOYA AKIHIKO , HIGUCHI KAZUTO , KITANI TOMOYUKI
IPC分类号： H01L33/36 , H01L33/32
CPC分类号： H01L33/507 , H01L33/0079 , H01L33/38 , H01L33/44 , H01L33/505 , H01L33/56 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provided an optical semiconductor device which prevents of reduction in lifetime and reduces a cost, and is downsized to the same extent as an optical semiconductor element. SOLUTION: An optical semiconductor device 1A is provided with: a light emitting layer 2 which has a first principal surface M1, a second principal surface M2 which is the opposite surface, and a first electrode 7a and a second electrode 7b which are formed on the second principal surface M2; a fluorescent layer 4 provided on the first principal surface M1; a light transparent layer 5 which is provided on the fluorescent layer 4 and made of an inorganic substance having light transparency; a first metal post 8a provided on the first electrode 7a; a second metal post 8b provided on the second electrode 7b; a sealing layer 10 which is provided on the second principal surface M2 and which seals the first metal post 8a and the second metal post 8b while exposing the ends of the posts; a first metal layer 11a provided on the end of the exposed first metal post 8a; and a second metal layer 11b provided on the end of the exposed second metal post 8b. COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：解决的问题：提供一种光学半导体装置，其防止寿命缩短并降低成本，并且被缩小到与光半导体元件相同的程度。解决方案：光学半导体器件1A具有：发光层2，其具有第一主表面M1，作为相反表面的第二主表面M2，以及第一电极7a和第二电极7b，形成在第二主面M2上; 设置在第一主面M1上的荧光体层4; 设置在荧光层4上并由具有透光性的无机物质制成的透光层5; 设置在第一电极7a上的第一金属柱8a; 设置在第二电极7b上的第二金属柱8b; 密封层10设置在第二主表面M2上并且在暴露柱的端部的同时密封第一金属柱8a和第二金属柱8b; 设置在暴露的第一金属柱8a的端部上的第一金属层11a; 以及设置在暴露的第二金属柱8b的端部上的第二金属层11b。版权所有（C）2010，JPO＆INPIT

30. 发明专利

JP2006073664A Semiconductor module 有权
标题翻译：半导体模块
公开(公告)号：JP2006073664A
公开(公告)日：2006-03-16
申请号：JP2004253276
申请日：2004-08-31
申请人： Toshiba Corp , 株式会社東芝
发明人： SHIMOKAWA KAZUO , KOBARIGAWA TAKASHI , OISHI MASAKO , YAMADA TATSUYA , USUDA OSAMU , ENDO YOSHINORI , MIURA YASUKI , TOYOSHIMA MASANORI , OMURA ICHIRO , NAKAGAWA AKIO , MATSUSHITA KENICHI , KAWAGUCHI YUSUKE , ARAI HARUKI , TAKEI HIROSHI , KAWANO TOMOHIRO , YOSHIKAWA NORIO , TAKAHASHI MORIO , SAITO YASUTO , URASE MASAHIRO
IPC分类号： H01L25/07 , H01L25/18
CPC分类号： H01L23/3121 , H01L21/565 , H01L23/36 , H01L23/367 , H01L23/4822 , H01L23/49805 , H01L23/49844 , H01L24/16 , H01L24/37 , H01L24/40 , H01L24/41 , H01L24/84 , H01L25/0655 , H01L25/165 , H01L29/4175 , H01L29/7802 , H01L29/7806 , H01L29/7809 , H01L29/7813 , H01L29/7835 , H01L2224/0557 , H01L2224/05571 , H01L2224/05573 , H01L2224/16225 , H01L2224/32225 , H01L2224/371 , H01L2224/37124 , H01L2224/37147 , H01L2224/40225 , H01L2224/73153 , H01L2224/73204 , H01L2224/73253 , H01L2224/83801 , H01L2224/84801 , H01L2924/00014 , H01L2924/01006 , H01L2924/01013 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/12032 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/19041 , H01L2924/19042 , H01L2924/19105 , H01L2924/30105 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H01L2924/3511 , H01L2924/00 , H01L2924/00012 , H01L2224/05599
摘要： PROBLEM TO BE SOLVED: To achieve reduction in mounting areal space and in wiring impedance as well as an improvement in heat dissipation in a semiconductor module for a DC-DC converter. SOLUTION: A power MOS chip 5 at the high potential side, a power MOS chip 7 at the low potential side, and an IC chip 9 for driving MOSFET gates formed in these chips, are mounted by flip chip bonding to a mounting board 3. On rear faces of the power MOS chips 5 and 7, heatsinks 53 and 55 are arranged. The heatsink 55 is fixed to the mounting board 3 at two places. The power MOS chips 5, 7 and IC chip 9 for driving are sealed as one package by a resin member 61. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：为了实现DC-DC转换器的半导体模块中的安装面积空间和布线阻抗的降低以及散热的改善。解决方案：在高电位侧的功率MOS芯片5，低电位侧的功率MOS芯片7和用于驱动形成在这些芯片中的MOSFET栅极的IC芯片9通过倒装芯片焊接安装到安装在功率MOS芯片5和7的后表面上布置有散热片53和55。散热器55在两处固定在安装板3上。用于驱动的功率MOS芯片5,7和用于驱动的IC芯片9由树脂构件61作为一个封装密封。版权所有（C）2006，JPO＆NCIPI

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