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21. 发明专利

JP2005252300A Gallium nitride-based compound semiconductor light emitting device 有权
标题翻译：基于氮化镓的化合物半导体发光器件
公开(公告)号：JP2005252300A
公开(公告)日：2005-09-15
申请号：JP2005127194
申请日：2005-04-25
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： OKAZAKI HARUHIKO , FURUKAWA CHISATO
IPC分类号： H01L33/32 , H01L33/42 , H01L33/50 , H01L33/00
摘要： PROBLEM TO BE SOLVED: To efficiently convert generated short wavelength light into visible light etc. by using a phosphor, and hereby efficiently take it to the outside without the use of a transparent electrode of difficult-to-obtain a material. SOLUTION: A pn junction is formed between a p type GaN layer and an n type GaN layer. By applying a voltage between a p side bonding electrode connected to the transparent electrode which covers the surface of the p type GaN layer, and an n side electrode in an exposed section of the n type GaN layer, a current spreading through the transparent electrode flows from the p type GaN layer to the pn junction to cause ultraviolet rays to be emitted. By etching the surface of the p type GaN layer into a stripe shape, the ultraviolet rays are irradiated outside from the pn junction end surface exposed to a wall surface in a pn junction eliminated section from which the pn junction is eliminated. This allows the ultraviolet rays to be taken out outside without passing through the p type GaN layer and the transparent electrode. Therefore, filling the pn junction eliminated section etc. with the phosphor layer allows the ultraviolet rays to be immediately converted to the visible light, such as red by the phosphor layer, and the visible light to be irradiated to the outside. COPYRIGHT: (C)2005,JPO&NCIPI
摘要翻译：要解决的问题：通过使用荧光体有效地将生成的短波长光转换成可见光等，因此在不使用难以获得的材料的透明电极的情况下有效地将其送到外部。解决方案：在p型GaN层和n型GaN层之间形成pn结。通过在与覆盖p型GaN层的表面的透明电极连接的p侧接合电极与n型GaN层的露出部分中的n侧电极之间施加电压，通过透明电极的电流从 p型GaN层到pn结以引起紫外线发射。通过将p型GaN层的表面蚀刻成条形，将紫外线从暴露于pn结消除部分中的pn结去除部分的pn结端表面照射出去除pn结。这样可以将紫外线从外部取出而不通过p型GaN层和透明电极。因此，用磷光体层填充pn结消除部分等，可以使紫外线立即被荧光体层转换为可见光，例如红色，并将可见光照射到外部。版权所有（C）2005，JPO＆NCIPI

22. 发明专利

JP2013048298A Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2013048298A
公开(公告)日：2013-03-07
申请号：JP2012263647
申请日：2012-11-30
申请人： Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , Toshiba Corp , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01L33/14 , H01L33/10 , H01L33/38
摘要： PROBLEM TO BE SOLVED: To provide a light-emitting device with reduced light absorption and with high brightness.SOLUTION: There is provided a light-emitting device comprising: a light-emitting layer; an upper electrode; a current diffusion layer provided between the light-emitting layer and the upper electrode and including a first layer provided on a side of the light-emitting layer and a second layer having a carrier concentration higher than a carrier concentration of the first layer and provided on a side of the upper electrode, the current diffusion layer including a concave portion capable of outputting light emitted from the light-emitting layer; and a reflective layer provided on a side opposite to the current diffusion layer with respect to the light-emitting layer.
摘要翻译：要解决的问题：提供具有降低的光吸收和高亮度的发光装置。解决方案：提供一种发光器件，包括：发光层; 上电极; 设置在所述发光层和所述上部电极之间的电流扩散层，并且包括设置在所述发光层的一侧的第一层和具有高于所述第一层的载流子浓度的载流子浓度的第二层，所述上电极的一侧，所述电流扩散层包括能够输出从所述发光层发射的光的凹部; 以及设置在相对于发光层与电流扩散层相反的一侧的反射层。版权所有（C）2013，JPO＆INPIT

23. 发明专利

JP2012028501A Light emission device 审中-公开
标题翻译：光发射装置
公开(公告)号：JP2012028501A
公开(公告)日：2012-02-09
申请号：JP2010164876
申请日：2010-07-22
申请人： Toshiba Corp , 株式会社東芝
发明人： FURUKAWA CHISATO
IPC分类号： H01L33/58 , H01L33/50
CPC分类号： H01L33/58 , H01L33/50 , H01L33/54 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2933/0091 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light emission device that can easily reduce chromaticity deviation in an emission direction which has a large intersecting angle to an optical axis.SOLUTION: A light emission device has a light emission element having a first face and a second face in which the optical axis of emission light is vertical to the second face, a mold body having a recess portion in which the first face side of the light emission element is disposed, a first sealing layer which covers the light emission element in the recess portion and contains first transparent resin and phosphor particles, and a condenser lens provided to the upper surface of the first sealing layer. The condenser lens has a refractive index which is larger as the distance from the optical axis increases, and the refractive index thereof at a position where the condenser lens comes into contact with the outer edge of the upper surface of the first sealing layer is higher than the refractive index of the first transparent resin.
摘要翻译：要解决的问题：提供一种可以容易地减少与光轴具有大的交叉角的发射方向上的色度偏差的发光装置。解决方案：发光装置具有发光元件，发光元件具有发光的光轴垂直于第二面的第一面和第二面，具有凹部的模体，第一面侧配置有覆盖所述凹部内的发光元件并且包含第一透明树脂和荧光体粒子的第一密封层和设置在所述第一密封层的上表面的聚光透镜。聚光透镜的折射率随着与光轴的距离的增大而变大，聚光透镜与第一密封层的上表面的外缘接触的位置的折射率高于第一透明树脂的折射率。版权所有（C）2012，JPO＆INPIT

24. 发明专利

JP2009200254A Semiconductor light emitting element 审中-公开
标题翻译：半导体发光元件
公开(公告)号：JP2009200254A
公开(公告)日：2009-09-03
申请号：JP2008040410
申请日：2008-02-21
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01L33/06 , H01L33/32 , H01L33/44 , H01L33/46
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element with high optical output. SOLUTION: The semiconductor light emitting element includes a first conductivity type first semiconductor layer 12 formed on the first surface 11a of a conductive substrate 11 having light transparency, an active layer 13 formed on the first semiconductor layer 12, a second conductivity type second semiconductor layer 14 formed on the active layer 13, an insulating antireflective film 15 formed in the first region on the second surface 11b of the substrate 11 which is opposed to the first surface 11a of the substrate 11, a first electrode 16 formed in a second region except for the first region on the second surface 11b of the substrate 11, a metal reflective film 17 formed on the antireflective film 15 and the first electrode 16, and a second electrode 18 electrically connected to the second semiconductor layer 14. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供具有高光输出的半导体发光元件。解决方案：半导体发光元件包括形成在具有透光性的导电基板11的第一表面11a上的第一导电型第一半导体层12，形成在第一半导体层12上的有源层13，第二导电类型形成在有源层13上的第二半导体层14，形成在与基板11的第一表面11a相对的基板11的第二表面11b上的第一区域中的绝缘抗反射膜15，除了基板11的第二表面11b上的第一区域之外的第二区域，形成在抗反射膜15和第一电极16上的金属反射膜17和与第二半导体层14电连接的第二电极18。 >版权所有（C）2009，JPO＆INPIT

25. 发明专利

JP2008198650A Semiconductor light-emitting element and semiconductor light-emitting device 审中-公开
标题翻译：半导体发光元件和半导体发光器件
公开(公告)号：JP2008198650A
公开(公告)日：2008-08-28
申请号：JP2007029327
申请日：2007-02-08
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01S5/22 , B82Y20/00 , H01S5/022
CPC分类号： H01S5/0425 , B82Y20/00 , H01L33/20 , H01L33/38 , H01L33/507 , H01L2224/48091 , H01S5/02276 , H01S5/02292 , H01S5/02296 , H01S5/22 , H01S5/34333 , H01S5/4056 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element from which a larger quantity of light can be obtained.
SOLUTION: The semiconductor light-emitting element includes an n-type semiconductor substrate 11, a stripe 25a having an n-type clad layer 13, an active layer 14 and a p-type clad layer 15 formed on the n-type semiconductor substrate 11 with smooth end faces 27 being arranged in parallel at the opposite ends, and a stripe 25b having layers substantially identical to the n-type clad layer 13, the active layer 14 and the p-type clad layer 15 on the n-type semiconductor substrate 11 with smooth end faces 27 having a direction different from that of the stripe 25a and being arranged in parallel at the opposite ends.
COPYRIGHT: (C)2008,JPO&INPIT
摘要翻译：要解决的问题：提供可以获得更大量的光的半导体发光元件。解决方案：半导体发光元件包括n型半导体衬底11，具有n型覆盖层13的条带25a，有源层14和形成在n型上的p型覆盖层15 具有光滑端面27的半导体衬底11在相对端平行布置，并且具有与n型覆盖层13，有源层14和p型覆盖层15基本相同的层的条25b。型半导体衬底11具有光滑的端面27，其方向不同于条带25a的方向，并且在相对端平行布置。版权所有（C）2008，JPO＆INPIT

26. 发明专利

JP2007157778A Semiconductor light emitting device 审中-公开
标题翻译：半导体发光器件
公开(公告)号：JP2007157778A
公开(公告)日：2007-06-21
申请号：JP2005346953
申请日：2005-11-30
申请人： Toshiba Corp , Toshiba Discrete Technology Kk , 東芝ディスクリートテクノロジー株式会社 , 株式会社東芝
发明人： NAKAMURA TAKAFUMI , IWAMOTO MASANOBU , FURUKAWA CHISATO
IPC分类号： H01L33/30 , H01L33/38 , H01L33/40 , H01L33/60
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor light emitting device wherein current blocking structure can be formed by a comparatively easy method. SOLUTION: The semiconductor light emitting device includes a first conductive first clad layer, an active layer formed on the first clad layer, a second conductive second clad layer formed on the active layer, a second conductive light extraction layer 7 formed on the second clad layer, an ohmic contact electrode 30 that is ohmic to the light extraction layer, and a bonding pad electrode formed on the light extraction layer that is non-ohmic to the light extraction layer and is electrically connected with the ohmic contact electrode. COPYRIGHT: (C)2007,JPO&INPIT
摘要翻译：要解决的问题：提供一种半导体发光器件，其中可以通过相对容易的方法形成电流阻挡结构。解决方案：半导体发光器件包括第一导电第一覆盖层，形成在第一覆盖层上的有源层，形成在有源层上的第二导电第二覆盖层，形成在有源层上的第二导电光提取层7 第二覆层，与光提取层欧姆的欧姆接触电极30，以及形成在光提取层上的与光提取层非欧姆并与欧姆接触电极电连接的焊盘电极。版权所有（C）2007，JPO＆INPIT

27. 发明专利

JP2006261688A Light-emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2006261688A
公开(公告)日：2006-09-28
申请号：JP2006129459
申请日：2006-05-08
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NITTA KOICHI
IPC分类号： H01L33/32 , H01L23/29 , H01L23/31 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/60 , H01L33/62
CPC分类号： H01L2224/48091 , H01L2224/48247 , H01L2224/48257 , H01L2224/49107 , H01L2924/00014
摘要： PROBLEM TO BE SOLVED: To efficiently extract light output from a light-emitting device which is constituted by a combination of a semiconductor light-emitting chip and fluorescent substances. SOLUTION: The light-emitting device is constituted in such a way that a fluorescent-substance layer 18 is irradiated with a UV light emitted from a UV-LED, and the lights generated in the fluorescent-substrate layer 18 penetrate the UV-LED and are extracted from a plate 12 side without passing through the fluorescent-substance layer 18. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：为了有效地提取从由半导体发光芯片和荧光物质的组合构成的发光装置的输出的光。解决方案：发光装置以这样的方式构成，即，用UV-LED发射的UV光照射荧光物质层18，并且在荧光基底层18中产生的光穿透UV -LED，并且不经过荧光物质层18从板12侧提取。版权所有（C）2006，JPO＆NCIPI

28. 发明专利

JP2006054295A Optical semiconductor device and its manufacturing method 审中-公开
标题翻译：光学半导体器件及其制造方法
公开(公告)号：JP2006054295A
公开(公告)日：2006-02-23
申请号：JP2004234434
申请日：2004-08-11
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO , NAKAMURA TAKAFUMI
IPC分类号： H01L33/20 , H01L33/30 , H01L33/40 , H01L33/64
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device and its manufacturing method, capable of improving light extraction efficiency. SOLUTION: The optical semiconductor device is provided with a substrate 3 having a spherical curved surface on the side of a light-extracting face; an active layer 1b; and clad layers 1a, 1b sandwiching the active layer; a semiconductor layer 1, in contact with the substrate 3 on the surface side thereof; a first electrode 4 filled and formed at the center of the semiconductor layer 1 and/or in a trench disposed radially; and a second electrode 6 formed on the side of the rear surface of the semiconductor layer. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：解决的问题：提供能够提高光提取效率的光半导体装置及其制造方法。解决方案：光学半导体器件设置有在光提取面侧具有球形曲面的衬底3; 活性层1b; 和夹层有源层的覆层1a，1b; 与表面侧的基板3接触的半导体层1; 填充并形成在半导体层1的中心和/或在径向设置的沟槽中的第一电极4; 以及形成在半导体层的后表面侧的第二电极6。版权所有（C）2006，JPO＆NCIPI

29. 发明专利

JP2003069084A Light emitting device 有权
标题翻译：发光装置
公开(公告)号：JP2003069084A
公开(公告)日：2003-03-07
申请号：JP2001255574
申请日：2001-08-27
申请人： Toshiba Corp , Toshiba Electronic Engineering Corp , 東芝電子エンジニアリング株式会社 , 株式会社東芝
发明人： FURUKAWA CHISATO
IPC分类号： C09K11/62 , C09K11/64 , H01L33/32 , H01L33/50 , H01L33/54 , H01L33/56 , H01L33/62 , H01L33/00
CPC分类号： H01L2224/32245 , H01L2224/32257 , H01L2224/45144 , H01L2224/48091 , H01L2224/48247 , H01L2224/49107 , H01L2224/73265 , H01L2924/181 , H01L2924/00014 , H01L2924/00012 , H01L2924/00
摘要： PROBLEM TO BE SOLVED: To provide a light emitting device that can be changed in wavelength or can emit light even when a light emitting element is in a turned-off state. SOLUTION: This light emitting device is provided with light emitting element (LS) which emits primary light (PL) having a first wavelength as a peak wavelength, a first wavelength changing material (FL1) which emits secondary light (L1) having a second wavelength that is different from the first wavelength as a peak wavelength upon absorbing the primary light emitted from the element (LS), and a second wavelength changing material (FL3) which emits second secondary light (L3) having a third wavelength that is different from the first wavelength as a peak wavelength upon absorbing the primary light emitted from the element (LS). The first wavelength changing material (FL1) has damping time which is 10 times or more as long as that of the second wavelength changing material (FL3).
摘要翻译：要解决的问题：即使当发光元件处于关闭状态时，提供可以改变波长或发光的发光器件。解决方案：该发光装置设置有发射具有第一波长的初级光（PL）作为峰值波长的发光元件（LS），发射具有第二波长的二次光（L1）的第一波长变换材料（FL1）其在吸收从元件（LS）发射的初级光时与作为峰值波长的第一波长不同，以及发射具有不同于第三波长的第三波长的第二次级光（L3）的第二波长改变材料（FL3）第一波长作为吸收从元件（LS）发射的初级光的峰值波长。第一波长变换材料（FL1）的阻尼时间为第二波长变换材料（FL3）的阻尼时间的10倍以上。

30. 发明专利

JPH08316570A SEMICONDUCTOR DEVICE, MANUFACTURE OF SEMICONDUCTOR LASER DEVICE, AND LASER DIODE MODULE 失效
公开(公告)号：JPH08316570A
公开(公告)日：1996-11-29
申请号：JP14002295
申请日：1995-05-15
申请人： TOSHIBA ELECTRONIC ENG , TOSHIBA CORP
发明人： MATSUYAMA TAKAYUKI , FURUKAWA CHISATO
IPC分类号： H01S5/00 , H01S5/02 , H01S3/18
摘要： PURPOSE: To provide a semiconductor laser device which is manufactured high in yield and set high in mechanical strength, wherein the laser device is obtained through such a manner that a guide groove of new structure is formed, and an accurate cleavage is carried out. CONSTITUTION: A guide groove 11 used for isolating a semiconductor laser device for each active layer 2 and a pair of grooves 10 formed on each side of the active layer are provided. The ratio of the depth of the guide groove 11 from the primary surface of a semiconductor substrate 1 to the twofold width is 1.0 or more, and the ratio of the depth of the groove 10 from the primary surface of the substrate 1 to the width is set smaller than that of the guide groove 11. A wafer is worked into a bar, and when the bar is split into unit devices, marks such as dicing lines are not required to be provided as many as devices by a scriber or a razor, so that a split process can be markedly shortened. Cuttings of a wafer produced when marks are provided on the wafer are prevented from adhering to the joint surface of a device to increase the device in leakage current, and the device is improved in yield.

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