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21. 发明授权

US08236477B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08236477B2
公开(公告)日：2012-08-07
申请号：US12591819
申请日：2009-12-02
申请人： Tasuku Matsumiya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
发明人： Tasuku Matsumiya , Daiju Shiono , Tomoyuki Hirano , Takahiro Dazai , Kotaro Endo
IPC分类号： G03F7/039 , G03F7/20 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0045 , G03F7/0046 , Y10S430/111
摘要： A positive resist composition including a base component (A) which exhibits increased solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the base component (A) including a polymeric compound (A1) containing a structural unit (a0) represented by general formula (a0-1), a structural unit (a1) derived from an acrylate ester containing an acid dissociable, dissolution inhibiting group, and a structural unit (a3) derived from an acrylate ester containing a hydroxy group-containing aliphatic hydrocarbon group represented by general formula (a3-1), and the amount of the structural unit (a3) based on the combined total of all structural units constituting the polymeric compound (A1) being in the range of 1 to 30 mol %.
摘要翻译：一种正性抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出增加的溶解度的碱成分（A）和暴露时产生酸的酸产生剂组分（B），所述碱成分（A）包含高分子化合物 A1），由通式（a0-1）表示的结构单元（a0），由含有酸解离性，溶解抑制基团的丙烯酸酯衍生的结构单元（a1）和来自丙烯酸酯的结构单元（a3）含有由通式（a3-1）表示的含羟基的脂族烃基的酯和基于构成聚合化合物（A1）的所有结构单元的总和的结构单元（a3）的量在该范围内为1〜30摩尔％。

22. 发明授权

US09494860B2 Resist composition, method of forming resist pattern 有权
标题翻译：抗蚀剂组成，形成抗蚀剂图案的方法
公开(公告)号：US09494860B2
公开(公告)日：2016-11-15
申请号：US13329001
申请日：2011-12-16
申请人： Tsuyoshi Kurosawa , Kotaro Endo , Yuichi Suzuki , Yuta Iwasawa
发明人： Tsuyoshi Kurosawa , Kotaro Endo , Yuichi Suzuki , Yuta Iwasawa
IPC分类号： G03F7/004 , G03F7/039 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A resist composition including a base component (A) which exhibits changed solubility in a developing solution under the action of acid, an acid generator component (B) which generates acid upon exposure, and a nitrogen-containing organic compound component (D), wherein the acid generator component (B) includes an acid generator (B1) containing a compound represented by general formula (b1-1) shown below, and the nitrogen-containing organic compound component (D) includes a compound (D1) represented by general formula (d1) shown below. In the formula, Y0 represents an alkylene group of 1 to 4 carbon atoms which may have a substituent, R0 represents an alkyl group, alkoxy group, halogen atom, halogenated alkyl group, hydroxyl group or oxygen atom (═O), p represents 0 or 1, and Z+ represents an organic cation.

23. 发明授权

US07846637B2 Material for forming resist protective film for use in liquid immersion lithography process and method for forming resist pattern using the protective film 有权
标题翻译：用于形成用于液浸光刻工艺的抗蚀保护膜的材料和使用该保护膜形成抗蚀剂图案的方法
公开(公告)号：US07846637B2
公开(公告)日：2010-12-07
申请号：US11587509
申请日：2005-04-25
申请人： Keita Ishizuka , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
发明人： Keita Ishizuka , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
IPC分类号： G03F7/09 , C08F12/20
CPC分类号： G03F7/11 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/2041
摘要： The liquid immersion lithography process is configured so that the resist pattern resolution is improved by exposing a resist film to the lithographic exposure light under the conditions in which the predetermined thickness of the liquid for liquid immersion lithography, of which the refractive index is higher than that of air and smaller than that of the resist film is intervened at least on the resist film in a path of the lithography exposure light reaching the resist film, a protective film is formed on the surface of the resist film to be used. Therefore, when various immersion liquid, water being the representative example is used in the liquid immersion lithography process can be formed, the deterioration of the resist film and the immersion liquid to be used are simultaneously prevented, and the number of the process steps are not increased, and then the resist pattern having higher resolving ability.
摘要翻译：液浸光刻工艺被配置为通过在其中折射率高于液浸光刻液的液体光刻液体的预定厚度的条件下将抗蚀剂膜暴露于平版曝光光下来改善抗蚀剂图案分辨率的空气并且小于抗蚀剂膜的空气至少在到达抗蚀剂膜的光刻曝光光的路径中的抗蚀剂膜上被干涉，在要使用的抗蚀剂膜的表面上形成保护膜。因此，在液浸光刻工序中，可以形成各种浸渍液，作为代表例的水，同时防止使用的抗蚀剂膜和浸渍液的劣化，处理工序的数量不是增加，然后抗蚀剂图案具有较高的分辨能力。

24. 发明申请

US20080311523A1 Material for Formation of Resist Protection Film and Method of Forming Resist Pattern Therewith 失效
标题翻译：抗蚀剂保护膜形成材料及其形成方法
公开(公告)号：US20080311523A1
公开(公告)日：2008-12-18
申请号：US11658900
申请日：2005-07-29
申请人： Kotaro Endo , Masaaki Yoshida , Keita Ishizuka
发明人： Kotaro Endo , Masaaki Yoshida , Keita Ishizuka
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/2041 , G03F7/11
摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used.
摘要翻译：在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。此外，可以应用与高折射率浸液介质组合使用的高折射率液浸介质，从而可以进一步提高图案精度。使用包含与浸渍有抗蚀剂膜的液体基本上不相容的特性的丙烯酸树脂组分的组合物，特别是水，并且也可溶于碱性，在所用的抗蚀剂膜的表面上形成保护膜。

25. 发明申请

US20080032202A1 Material for Forming Resist Protective Film for Use in Liquid Immersion Lithography Process and Method for Forming Resist Pattern Using the Protective Film 有权
标题翻译：用于液浸式平版印刷工艺中形成抗蚀保护膜的材料及使用保护膜形成抗蚀剂图案的方法
公开(公告)号：US20080032202A1
公开(公告)日：2008-02-07
申请号：US11587509
申请日：2005-04-25
申请人： Keita Ishizuka , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
发明人： Keita Ishizuka , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
IPC分类号： C08F20/10 , C08F22/00 , C08F36/16 , G03F7/11 , H01L21/027
CPC分类号： G03F7/11 , C08F220/18 , C08F220/28 , C08F232/08 , G03F7/2041
摘要： The liquid immersion lithography process is configured so that the resist pattern resolution is improved by exposing a resist film to the lithographic exposure light under the conditions in which the predetermined thickness of the liquid for liquid immersion lithography, of which the refractive index is higher than that of air and smaller than that of the resist film is intervened at least on the resist film in a path of the lithography exposure light reaching the resist film, a protective film is formed on the surface of the resist film to be used. Therefore, when various immersion liquid, water being the representative example is used in the liquid immersion lithography process can be formed, the deterioration of the resist film and the immersion liquid to be used are simultaneously prevented, and the number of the process steps are not increased, and then the resist pattern having higher resolving ability.
摘要翻译：液浸光刻工艺被配置为通过在其中折射率高于液浸光刻液的液体光刻液体的预定厚度的条件下将抗蚀剂膜暴露于平版曝光光下来改善抗蚀剂图案分辨率的空气并且小于抗蚀剂膜的空气至少在到达抗蚀剂膜的光刻曝光光的路径中的抗蚀剂膜上被干涉，在要使用的抗蚀剂膜的表面上形成保护膜。因此，在液浸光刻工序中，可以形成各种浸渍液，作为代表例的水，同时防止使用的抗蚀剂膜和浸渍液的劣化，处理工序的数量不是增加，然后抗蚀剂图案具有较高的分辨能力。

26. 发明授权

US07272632B2 Distributed system and multiplexing control method for the system 有权
标题翻译：分布式系统和多路复用控制方法
公开(公告)号：US07272632B2
公开(公告)日：2007-09-18
申请号：US10083572
申请日：2002-02-27
申请人： Kotaro Endo
发明人： Kotaro Endo
IPC分类号： G06F15/16
CPC分类号： G06F11/1482 , G06F11/1425 , G06F11/182
摘要： A distributed system of this invention forms multiplexing by n computers, and permits up to f computers to fail and halt. Respective computers exchange input candidates via an internal network B, and generate lists of input candidates. Each computer repeats generation of the list until (n−f) identical input candidates appear in that list. A computer which satisfies this condition executes its process irrespective of the states of other computers. This distributed system never generates a split brain in principle, and never interrupts a process upon occurrence of a failure due to time-out since it does not perform any failure detection.
摘要翻译：本发明的分布式系统通过n台计算机形成多路复用，并允许多达f台计算机故障并停止。各计算机通过内部网络B交换输入候选，并生成候选输入列表。每个计算机重复列表的生成，直到（n-f）相同的输入候选出现在该列表中。满足该条件的计算机执行其处理，而与其他计算机的状态无关。这种分布式系统原则上不会产生分裂的大脑，并且由于它不执行任何故障检测，所以在由于超时而导致的故障发生时不会中断进程。

27. 发明授权

US06799222B1 Method for synchronizing program applied to distributed computer system 失效
标题翻译：同步程序应用于分布式计算机系统的方法
公开(公告)号：US06799222B1
公开(公告)日：2004-09-28
申请号：US09632628
申请日：2000-08-04
申请人： Kotaro Endo
发明人： Kotaro Endo
IPC分类号： G06F1516
CPC分类号： H04L47/10 , H04L47/15
摘要： A method for synchronizing a program that is executed on one of a plurality of computers in a distributed computer system by using a reliable ordered multicast, comprising the steps of generating a new process comprising a program and the status in execution on a computer, and transferring the new process through the reliable ordered multicast to the computers, respectively.
摘要翻译：一种通过使用可靠的有序多播来同步在分布式计算机系统中的多个计算机之一上执行的程序的方法，包括以下步骤：在计算机上生成包括程序和执行状态的新进程，以及传送新进程通过可靠的有序组播分别到计算机。

28. 发明授权

US08227169B2 Compound, acid generator, resist composition, and method of forming resist pattern 有权
标题翻译：化合物，酸发生剂，抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08227169B2
公开(公告)日：2012-07-24
申请号：US12450060
申请日：2008-04-04
申请人： Akiya Kawaue , Yoshiyuki Utsumi , Takehito Seo , Hideo Hada , Kotaro Endo , Daisuke Kawana , Yasuhiro Yoshii , Tsuyoshi Kurosawa
发明人： Akiya Kawaue , Yoshiyuki Utsumi , Takehito Seo , Hideo Hada , Kotaro Endo , Daisuke Kawana , Yasuhiro Yoshii , Tsuyoshi Kurosawa
IPC分类号： G03F7/004 , G03F7/30 , C07C309/06
CPC分类号： C07D333/76 , C07C309/10 , C07C381/12 , C07C2603/74 , C07D209/86 , C07D295/104 , C07D307/20 , C07D307/93 , C07D307/94 , C07D493/08 , C07D493/18 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There are provided a compound preferable as an acid generator for a resist composition, an acid generator including the compound, a resist composition containing the acid generator, and a method of forming a resist pattern using the resist composition, and the compound is represented by general formula (b1-12) shown below: R2—CH2—O—Y1—SO3−A+ (b1-12) wherein R2 represents a monovalent aromatic organic group; Y1 represents an alkylene group of 1 to 4 carbon atoms which may be fluorinated; and A+ represents a cation.
摘要翻译：提供优选作为抗蚀剂组合物的酸发生剂的化合物，包含该化合物的酸产生剂，含有酸产生剂的抗蚀剂组合物，以及使用该抗蚀剂组合物形成抗蚀剂图案的方法，该化合物由通式式（b1-12）表示：R2-CH2-O-Y1-SO3-A +（b1-12）其中R2表示一价芳族有机基团; Y1表示可被氟化的1〜4个碳原子的亚烷基; 而A +代表阳离子。

29. 发明授权

US07951523B2 Material for forming resist protective film and method for forming resist pattern using same 有权
标题翻译：用于形成抗蚀剂保护膜的材料和使用其形成抗蚀剂图案的方法
公开(公告)号：US07951523B2
公开(公告)日：2011-05-31
申请号：US11659006
申请日：2005-07-29
申请人： Keita Ishizuka , Kotaro Endo , Tomovuki Hiranoa
发明人： Keita Ishizuka , Kotaro Endo , Tomovuki Hiranoa
IPC分类号： G03F7/11 , C07D265/00 , C07D285/00
CPC分类号： G03F7/11 , G03F7/0046 , G03F7/0382 , G03F7/2041 , Y10S430/128
摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Using an alkaline soluble polymer, a crosslinking agent, and a solvent capable of dissolving them as at least constituent component, a composition is prepared and a protective film is formed on the surface of the resist film to be used, using the composition.
摘要翻译：在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。使用碱溶性聚合物，交联剂和能够溶解至少构成成分的溶剂，制备组合物，并使用该组合物在所使用的抗蚀剂膜的表面上形成保护膜。

30. 发明申请

US20090117490A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：用于浸润光刻的正极性组合物和形成耐蚀图案的方法
公开(公告)号：US20090117490A1
公开(公告)日：2009-05-07
申请号：US12300760
申请日：2007-04-23
申请人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
发明人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
IPC分类号： G03F7/027 , G03F7/26
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的环状主链状树脂（A1）和含有结构式单元（a）衍生自丙烯酸而不含氟原子。

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