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1. 发明申请

US20090117490A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：用于浸润光刻的正极性组合物和形成耐蚀图案的方法
公开(公告)号：US20090117490A1
公开(公告)日：2009-05-07
申请号：US12300760
申请日：2007-04-23
申请人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
发明人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
IPC分类号： G03F7/027 , G03F7/26
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的环状主链状树脂（A1）和含有结构式单元（a）衍生自丙烯酸而不含氟原子。

2. 发明授权

US07799507B2 Positive resist composition for immersion lithography and method for forming resist pattern 有权
标题翻译：用于浸渍光刻的正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07799507B2
公开(公告)日：2010-09-21
申请号：US12300760
申请日：2007-04-23
申请人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
发明人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的环状主链状树脂（A1）和含有结构式单元（a）衍生自丙烯酸而不含氟原子。

3. 发明申请

US20100104973A1 COMPOUND, ACID GENERATOR, RESIST COMPOSITION, AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：化合物，酸生成剂，抗蚀剂组合物和形成耐火图案的方法
公开(公告)号：US20100104973A1
公开(公告)日：2010-04-29
申请号：US12450060
申请日：2008-04-04
申请人： Akiya Kawaue , Yoshiyuki Utsumi , Takehito Seo , Hideo Hada , Kotaro Endo , Daisuke Kawana , Yasuhiro Yoshii , Tsuyoshi Kurosawa
发明人： Akiya Kawaue , Yoshiyuki Utsumi , Takehito Seo , Hideo Hada , Kotaro Endo , Daisuke Kawana , Yasuhiro Yoshii , Tsuyoshi Kurosawa
IPC分类号： G03F7/20 , C07C309/19 , G03F7/004
CPC分类号： C07D333/76 , C07C309/10 , C07C381/12 , C07C2603/74 , C07D209/86 , C07D295/104 , C07D307/20 , C07D307/93 , C07D307/94 , C07D493/08 , C07D493/18 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There are provided a compound preferable as an acid generator for a resist composition, an acid generator including the compound, a resist composition containing the acid generator, and a method of forming a resist pattern using the resist composition, and the compound is represented by general formula (b1-12) shown below: R2—CH2—O—Y1—SO3−A+ (b1-12) wherein R2 represents a monovalent aromatic organic group; Y1 represents an alkylene group of 1 to 4 carbon atoms which may be fluorinated; and A+ represents a cation.
摘要翻译：提供优选作为抗蚀剂组合物的酸发生剂的化合物，包含该化合物的酸产生剂，含有酸产生剂的抗蚀剂组合物以及使用该抗蚀剂组合物形成抗蚀剂图案的方法，该化合物由通式式（b1-12）表示：R2-CH2-O-Y1-SO3-A +（b1-12）其中R2表示一价芳族有机基团; Y1表示可被氟化的1〜4个碳原子的亚烷基; 而A +代表阳离子。

4. 发明授权

US08227169B2 Compound, acid generator, resist composition, and method of forming resist pattern 有权
标题翻译：化合物，酸发生剂，抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08227169B2
公开(公告)日：2012-07-24
申请号：US12450060
申请日：2008-04-04
申请人： Akiya Kawaue , Yoshiyuki Utsumi , Takehito Seo , Hideo Hada , Kotaro Endo , Daisuke Kawana , Yasuhiro Yoshii , Tsuyoshi Kurosawa
发明人： Akiya Kawaue , Yoshiyuki Utsumi , Takehito Seo , Hideo Hada , Kotaro Endo , Daisuke Kawana , Yasuhiro Yoshii , Tsuyoshi Kurosawa
IPC分类号： G03F7/004 , G03F7/30 , C07C309/06
CPC分类号： C07D333/76 , C07C309/10 , C07C381/12 , C07C2603/74 , C07D209/86 , C07D295/104 , C07D307/20 , C07D307/93 , C07D307/94 , C07D493/08 , C07D493/18 , G03F7/0045 , G03F7/0046 , G03F7/0397 , Y10S430/106 , Y10S430/111
摘要： There are provided a compound preferable as an acid generator for a resist composition, an acid generator including the compound, a resist composition containing the acid generator, and a method of forming a resist pattern using the resist composition, and the compound is represented by general formula (b1-12) shown below: R2—CH2—O—Y1—SO3−A+ (b1-12) wherein R2 represents a monovalent aromatic organic group; Y1 represents an alkylene group of 1 to 4 carbon atoms which may be fluorinated; and A+ represents a cation.
摘要翻译：提供优选作为抗蚀剂组合物的酸发生剂的化合物，包含该化合物的酸产生剂，含有酸产生剂的抗蚀剂组合物，以及使用该抗蚀剂组合物形成抗蚀剂图案的方法，该化合物由通式式（b1-12）表示：R2-CH2-O-Y1-SO3-A +（b1-12）其中R2表示一价芳族有机基团; Y1表示可被氟化的1〜4个碳原子的亚烷基; 而A +代表阳离子。

5. 发明授权

US08338075B2 Positive resist composition and method of forming resist pattern 有权
标题翻译：正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US08338075B2
公开(公告)日：2012-12-25
申请号：US12534735
申请日：2009-08-03
申请人： Masaru Takeshita , Shinji Kumada , Yasuhiro Yoshii , Takeshi Iwai , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Shinji Kumada , Yasuhiro Yoshii , Takeshi Iwai , Tsuyoshi Nakamura
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0048 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), the organic solvent (S) including an alcohol-based organic solvent having a boiling point of at least 150° C.; and a method of forming a resist pattern including: applying the positive resist composition on a substrate on which a first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern.
摘要翻译：一种正型抗蚀剂组合物，其包含：在酸的作用下在碱性显影液中显示增加的溶解度的碱成分（A）和在暴露时产生酸的酸发生剂组分（B）; 溶解在有机溶剂（S）中，有机溶剂（S）包括沸点为至少150℃的醇类有机溶剂; 以及形成抗蚀剂图案的方法，包括：将正性抗蚀剂组合物施加在其上形成有第一抗蚀剂图案的基板上以形成第二抗蚀剂膜; 并对第二抗蚀剂膜进行选择性曝光和碱显影以形成抗蚀剂图案。

6. 发明申请

US20100047724A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20100047724A1
公开(公告)日：2010-02-25
申请号：US12534735
申请日：2009-08-03
申请人： Masaru Takeshita , Shinji Kumada , Yasuhiro Yoshii , Takeshi Iwai , Tsuyoshi Nakamura
发明人： Masaru Takeshita , Shinji Kumada , Yasuhiro Yoshii , Takeshi Iwai , Tsuyoshi Nakamura
IPC分类号： G03C1/053 , G03C1/00 , G03F7/00
CPC分类号： G03F7/0048 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A positive resist composition including: a base component (A) which exhibits increased solubility in an alkali developing solution under the action of acid; and an acid-generator component (B) which generates acid upon exposure; dissolved in an organic solvent (S), the organic solvent (S) including an alcohol-based organic solvent having a boiling point of at least 150° C.; and a method of forming a resist pattern including: applying the positive resist composition on a substrate on which a first resist pattern is formed to form a second resist film; and subjecting the second resist film to selective exposure and alkali developing to form a resist pattern.
摘要翻译：一种正型抗蚀剂组合物，其包含：在酸的作用下在碱性显影液中显示增加的溶解度的碱成分（A）和在暴露时产生酸的酸发生剂组分（B）; 溶解在有机溶剂（S）中，有机溶剂（S）包括沸点为至少150℃的醇类有机溶剂; 以及形成抗蚀剂图案的方法，包括：将正性抗蚀剂组合物施加在其上形成有第一抗蚀剂图案的基板上以形成第二抗蚀剂膜; 并对第二抗蚀剂膜进行选择性曝光和碱显影以形成抗蚀剂图案。

7. 发明授权

US07494762B2 Positive resist composition for immersion lithography and method for forming resist pattern 有权
标题翻译：用于浸渍光刻的正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US07494762B2
公开(公告)日：2009-02-24
申请号：US11871399
申请日：2007-10-12
申请人： Makiko Irie , Yasuhiro Yoshii
发明人： Makiko Irie , Yasuhiro Yoshii
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/0397 , G03F7/0392 , G03F7/2041 , Y10S430/111
摘要： Provided are a positive resist composition for immersion lithography, and a method for forming a resist pattern using the same, wherein the positive resist composition comprises a resin component (A) that increases its alkali solubility under action of an acid, an acid generator component (B) that generates an acid upon exposure, and a resin component (C) containing a constituent unit (c1) represented by the following Chemical Formula 1: wherein R1 is a hydrogen atom or a methyl group; R2 and R3 are each independently represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n is an integer of 0 to 3; and Z is an aliphatic cyclic group having 4 to 12 carbon atoms, having a fluorine atom and/or a fluorinated alkyl group as a substituent.
摘要翻译：提供了一种用于浸渍光刻的正型抗蚀剂组合物和使用其的抗蚀剂图案的形成方法，其中正型抗蚀剂组合物包含在酸的作用下提高其碱溶性的树脂组分（A），酸产生剂组分 B），其含有下述化学式1表示的构成单元（c1）的树脂成分（C）：其中，R1为氢原子或甲基， R2和R3各自独立地表示氢原子或碳原子数1〜5的烷基。 n为0〜3的整数， Z为具有氟原子和/或氟代烷基作为取代基的碳原子数4〜12的脂肪族环状基团。

8. 发明申请

US20080090171A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：用于浸润光刻的正极性组合物和形成耐蚀图案的方法
公开(公告)号：US20080090171A1
公开(公告)日：2008-04-17
申请号：US11871399
申请日：2007-10-12
申请人： Makiko Irie , Yasuhiro Yoshii
发明人： Makiko Irie , Yasuhiro Yoshii
IPC分类号： G03C5/29
CPC分类号： G03F7/0397 , G03F7/0392 , G03F7/2041 , Y10S430/111
摘要： Provided are a positive resist composition for immersion lithography, and a method for forming a resist pattern using the same, wherein the positive resist composition comprises a resin component (A) that increases its alkali solubility under action of an acid, an acid generator component (B) that generates an acid upon exposure, and a resin component (C) containing a constituent unit (c1) represented by the following Chemical Formula 1: wherein R1 is a hydrogen atom or a methyl group; R2 and R3 are each independently represents a hydrogen atom or an alkyl group having 1 to 5 carbon atoms; n is an integer of 0 to 3; and Z is an aliphatic cyclic group having 4 to 12 carbon atoms, having a fluorine atom and/or a fluorinated alkyl group as a substituent.
摘要翻译：提供了一种用于浸渍光刻的正型抗蚀剂组合物和使用其的抗蚀剂图案的形成方法，其中正型抗蚀剂组合物包含在酸的作用下提高其碱溶性的树脂组分（A），酸产生剂组分 B），其含有下述化学式1表示的构成单元（c1）的树脂成分（C）：其中R 1为氢原子或甲基; R 2和R 3各自独立地表示氢原子或具有1至5个碳原子的烷基; n为0〜3的整数， Z为具有氟原子和/或氟代烷基作为取代基的碳原子数4〜12的脂肪族环状基团。

9. 发明申请

US20100075249A1 POSITIVE RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 有权
标题翻译：正电阻组合物和形成电阻图案的方法
公开(公告)号：US20100075249A1
公开(公告)日：2010-03-25
申请号：US12447432
申请日：2007-10-15
申请人： Yoshiyuki Utsumi , Hiroaki Shimizu , Kyoko Ohshita , Yasuhiro Yoshii
发明人： Yoshiyuki Utsumi , Hiroaki Shimizu , Kyoko Ohshita , Yasuhiro Yoshii
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： G03F7/0397 , G03F7/0046 , G03F7/2041 , H01L21/0276 , Y10S430/108 , Y10S430/111
摘要： A positive resist composition including a resin component (A) which exhibits changed alkali solubility under action of acid and an acid-generator component (B) which generates acid upon exposure, the resin component (A) including a copolymer (A1) containing a structural unit (a1) represented by general formula (II) or a polymer (A2) consisting of a structural unit (a1) represented by general formula (II) (wherein R represents a hydrogen atom, a halogen atom, a lower alkyl group or a halogenated lower alkyl group; each of R1 to R3 independently represents an alkyl group or a fluorinated alkyl group, with the provision that no fluorine atom is bonded to a carbon atom adjacent to the tertiary carbon atom to which R1 to R3 are bonded, and at least one of R1 to R3 represents a fluorinated alkyl group; and R2 and R3 may form a ring structure).
摘要翻译：一种正型抗蚀剂组合物，其包含在酸作用下表现出碱溶性变化的树脂组分（A）和暴露时产生酸的酸产生剂组分（B），所述树脂组分（A）包含含有结构由通式（II）表示的单元（a1）或由通式（II）表示的结构单元（a1）组成的聚合物（A2）（其中R表示氢原子，卤素原子，低级烷基或卤代低级烷基; R 1〜R 3各自独立地表示烷基或氟代烷基，条件是不与氟原子键合到与R1-R3键合的叔碳原子相邻的碳原子上，并且在 R1至R3中的至少一个表示氟化烷基; R2和R3可以形成环结构）。

10. 发明授权

US09040220B2 Compound and method of producing the same, acid generator, resist composition and method of forming resist pattern 有权
标题翻译：化合物及其制造方法，酸发生剂，抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US09040220B2
公开(公告)日：2015-05-26
申请号：US13410613
申请日：2012-03-02
申请人： Hideo Hada , Yoshiyuki Utsumi , Keita Ishiduka , Kensuke Matsuzawa , Fumitake Kaneko , Kyoko Ohshita , Hiroaki Shimizu , Yasuhiro Yoshii
发明人： Hideo Hada , Yoshiyuki Utsumi , Keita Ishiduka , Kensuke Matsuzawa , Fumitake Kaneko , Kyoko Ohshita , Hiroaki Shimizu , Yasuhiro Yoshii
IPC分类号： G03F7/004 , G03F7/30 , C07C303/32 , C07C309/06 , C07C309/12 , C07C309/19 , C07C381/12 , C07C309/17 , C07D333/46 , C07D493/18 , G03F7/038 , G03F7/039 , C08K5/19 , C08K5/42
CPC分类号： C07C381/12 , C07C303/32 , C07C309/06 , C07C309/12 , C07C309/17 , C07C309/19 , C07C2603/74 , C07D333/46 , C07D493/18 , C08K5/19 , C08K5/42 , G03F7/0045 , G03F7/0046 , G03F7/0382 , G03F7/0397 , Y10S430/111 , Y10S430/12 , Y10S430/122 , Y10S430/123
摘要： A resist composition including a base component which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component which generates acid upon exposure, the acid-generator including an acid generator consisting of a compound represented by general formula (b1-1) shown below: In which RX represents a hydrocarbon group which may have a substituent exclusive of a nitrogen atom; each of Q2 and Q3 independently represents a single bond or a divalent linkage group; Y1 represents an alkylene group or fluorinated alkyl group of 1 to 4 carbon atoms; and Z+ represents an organic cation exclusive of an ion represented by general formula (w-1).
摘要翻译：一种抗蚀剂组合物，其包含在酸的作用下在碱性显影液中显示出改变的溶解性的基础成分和暴露时产生酸的酸发生剂成分，所述酸发生剂包括由通式（b1）表示的化合物 -1），其中RX表示可以具有不包括氮原子的取代基的烃基; Q2和Q3各自独立地表示单键或二价连接基团; Y1表示1〜4个碳原子的亚烷基或氟代烷基; Z +表示除通式（w-1）表示的离子的有机阳离子。

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