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21. 发明授权

US5340697A Negative type photoresist composition 失效
标题翻译：负型光刻胶组合物
公开(公告)号：US5340697A
公开(公告)日：1994-08-23
申请号：US73564
申请日：1993-06-09
申请人： Hiroshi Yoshimoto , Kazuya Uenishi , Tadayoshi Kokubo
发明人： Hiroshi Yoshimoto , Kazuya Uenishi , Tadayoshi Kokubo
IPC分类号： G03F7/004 , G03F7/029 , G03F7/031 , G03F7/038 , H01L21/027 , G03C1/492
CPC分类号： G03F7/0045 , G03F7/031 , G03F7/038 , Y10S430/12 , Y10S430/121
摘要： A negative type photoresist composition comprising a light-sensitive s-triazine compound represented by formula (I), an acid-crosslinkable material, and an alkali soluble resin: ##STR1## wherein R.sub.1 and R.sub.2, which may be the same or different, each represents a hydrogen atom, an alkyl group, a substituted alkyl group, an aryl group, a substituted aryl group, a group represented by formula (II) or (III), or R.sub.1 and R.sub.2 may form a heterocyclic group consisting of non-metal atoms bonded to a nitrogen atom; R.sub.3 and R.sub.4 each represent a hydrogen atom, a halogen atom, an alkyl group, or an alkoxy group; X and Y, which may be the same or different, each represents a chlorine atom or a bromine atom; and m and n each represents 0, 1 or 2; ##STR2## wherein R.sub.5 represents an alkyl group, a substituted alkyl group, an aryl group, or a substituted aryl group; and R.sub.6 and R.sub.7, which may be the same or different, each represents a hydrogen atom, an alkyl group, a substituted alkyl group, an aryl group, or a substituted aryl group.
摘要翻译：一种负型光致抗蚀剂组合物，其包含由式（I）表示的光敏均三嗪化合物，酸可交联物质和碱溶性树脂：其中R 1和R 2可以相同或不同，不同的是，各自表示氢原子，烷基，取代的烷基，芳基，取代的芳基，由式（II）或（III）表示的基团，或者R 1和R 2可以形成由键合到氮原子上的非金属原子; R3和R4各自表示氢原子，卤素原子，烷基或烷氧基; X和Y可以相同或不同，各自表示氯原子或溴原子; m和n各自表示0,1或2; （II）其中R 5表示烷基，取代的烷基，芳基或取代的芳基; R 6和R 7可以相同或不同，表示氢原子，烷基，取代的烷基，芳基或取代的芳基。

22. 发明授权

US5173389A Positive-working photoresist composition 失效
公开(公告)号：US5173389A
公开(公告)日：1992-12-22
申请号：US514811
申请日：1990-04-26
申请人： Kazuya Uenishi , Shinji Sakaguchi , Tadayoshi Kokubo
发明人： Kazuya Uenishi , Shinji Sakaguchi , Tadayoshi Kokubo
IPC分类号： G03F7/022 , H01L21/027 , H01L21/30
CPC分类号： G03F7/022
摘要： A positive-working photoresist composition is disclosed, which comprises (1) a light-sensitive material obtained by reacting a polyhydroxy compound containing at least one group represented by the following general formula (I) per molecule with at least one of 1,2-naphthoquinonediazido-5-sulfonyl chloride and 1,2-naphthoquinonediazido-4-sulfonyl chloride, and (2) an alkali-soluble novolak resin: ##STR1## wherein R.sub.1 and R.sub.2 each represents a hydrogen atom or a C.sub.1 -C.sub.4 straight or branched alkyl or alkoxy group, provided that R.sub.1 and R.sub.2 do not represent hydrogen atoms at the same time; and X represents a divalent organic group.

23. 发明授权

US4894311A Positive-working photoresist composition 失效
标题翻译：正光刻胶组合物
公开(公告)号：US4894311A
公开(公告)日：1990-01-16
申请号：US113951
申请日：1987-10-29
申请人： Kazuya Uenishi , Yasumasa Kawabe , Tadayoshi Kokubo
发明人： Kazuya Uenishi , Yasumasa Kawabe , Tadayoshi Kokubo
IPC分类号： G03C1/72 , G03F7/022 , H01L21/027 , H01L21/30
CPC分类号： G03F7/022
摘要： A positive-working photoresist composition containing an alkali-soluble novolak resin and a photosensitive compound represented by the formula ##STR1## wherein D.sub.1 and D.sub.2, which may be the same or different, each represents a 1,2-naphthoquinonediazido-5-sulfonyl group or a 1,2-naphthoquinonediazido-4-sulfonyl group; R.sub.1 and R.sub.2, which may be the same or different, each represents an alkoxy group, or an alkyl ester group; and a, b, c, and d each is 0 or an integer from 1 to 5, provided that (a+b).gtoreq.1 and (c+d).gtoreq.1.The photoresist composition is excellent in sensitivity and resolving power and forms a resist pattern having good sectional shape and high heat resistance on, for example, a semiconductor. The photoresist composition is also applicable for forming a resist pattern having a line width of less than 1 .mu.m.
摘要翻译：含有碱溶性酚醛清漆树脂和式（I）表示的光敏化合物的正性光致抗蚀剂组合物，其中D1和D2可以相同或不同，表示1,2-萘醌二叠氮基-5 磺酰基或1,2-萘醌二叠氮基-4-磺酰基; R 1和R 2可以相同或不同，各自表示烷氧基或烷基酯基; 并且a，b，c和d各自为0或1至5的整数，条件是（a + b）> / = 1和（c + d）> / = 1。光致抗蚀剂组合物的灵敏度和分辨能力优异，并且在例如半导体上形成具有良好截面形状和高耐热性的抗蚀剂图案。光致抗蚀剂组合物也可用于形成线宽小于1μm的抗蚀剂图案。

24. 发明授权

US4863828A Positive-working o-quinone diazide photoresist composition 失效
标题翻译：正活性邻醌二叠氮光致抗蚀剂组合物
公开(公告)号：US4863828A
公开(公告)日：1989-09-05
申请号：US145862
申请日：1988-01-20
申请人： Yasumasa Kawabe , Kazuya Uenishi , Tadayoshi Kokubo
发明人： Yasumasa Kawabe , Kazuya Uenishi , Tadayoshi Kokubo
IPC分类号： G03C1/72 , G03F7/022
CPC分类号： G03F7/0226
摘要： A positive-working photoresist composition is disclosed, which comprises a light-sensitive substance of 1,2-naphthoquinonediazide-4- and/or -5-sulfonate of 2,3,4,3',4',5'-hexahydroxybenzophenone and an alkali-soluble novolak resin dissolved in ethyl lactate or methyl lactate.

25. 发明授权

US4842986A Positively working resist material 失效
标题翻译：积极的抗拒材料
公开(公告)号：US4842986A
公开(公告)日：1989-06-27
申请号：US889707
申请日：1986-07-28
申请人： Nobuaki Matsuda , Tadayoshi Kokubo , Toshiaki Aoai , Akira Umehara , Yoshimasa Aotani
发明人： Nobuaki Matsuda , Tadayoshi Kokubo , Toshiaki Aoai , Akira Umehara , Yoshimasa Aotani
IPC分类号： G03C7/10 , C08G77/46 , G03C1/72 , G03F7/039 , G03F7/075 , H01L21/027
CPC分类号： G03C1/72 , G03F7/0758 , Y10T403/3926 , Y10T403/3933 , Y10T403/556 , Y10T403/60
摘要： A positively working resist material is disclosed, comprising a compound having at least one silyl ether group and capable of directly dissociating an Si-O-C bond upon irradiation with far ultraviolet rays, X-rays, an electron beam, or an ion beam. The resist material has high sensitivity to high energy radiation, excellent resistance to dry etching, and can be developed with an alkaline aqueous solution.
摘要翻译：公开了一种正性抗蚀剂材料，其包含具有至少一个甲硅烷基醚基团且能够在远紫外线，X射线，电子束或离子束照射时直接解离Si-O-C键的化合物。抗蚀剂材料对高能量辐射具有高灵敏度，优异的抗干蚀刻性，并且可以用碱性水溶液显影。

26. 发明授权

US5494773A Positive photoresist composition comprising a novolak resin having a cycloalkylidene-bisphenol group 失效
标题翻译：正型光致抗蚀剂组合物，其包含具有环亚烷基 - 双酚基团的酚醛清漆树脂
公开(公告)号：US5494773A
公开(公告)日：1996-02-27
申请号：US399046
申请日：1995-03-06
申请人： Shiro Tan , Yasumasa Kawabe , Tadayoshi Kokubo
发明人： Shiro Tan , Yasumasa Kawabe , Tadayoshi Kokubo
IPC分类号： G03F7/022 , G03F7/023 , H01L21/027
CPC分类号： G03F7/0236
摘要： A positive photoresist composition comprising an alkali-soluble novolak resin and a 1,2-quinonediazide compound is described, wherein the alkali-soluble novolak resin contains a novolak resin to be obtained by condensing a mixture of (a) at least one phenol represented by the following formula (1) and at least one compound represented by the following formula (2) and (b) at least one aldehyde: ##STR1## wherein R.sub.1, R.sub.2 and R.sub.3 are the same or different and each represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group, an alkenyl group, an aryl group, an aralkyl group, an alkoxycarbonyl group or an arylcarbonyl group; R.sub.4, R.sub.5, R.sub.6 and R.sub.7 are the same or different and each represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, a cycloalkyl group, an alkoxy group, an alkenyl group, an aryl group or an aralkyl group; and n represents an integer of from 4 to 7.
摘要翻译：描述了包含碱溶性酚醛清漆树脂和1,2-醌二叠氮化合物的正型光致抗蚀剂组合物，其中碱溶性酚醛清漆树脂含有酚醛清漆树脂，其通过将（a）至少一种由（1）和至少一种由下式（2）和（b）表示的化合物至少一种醛：其中R 1，R 2和R 3相同或不同，各自表示氢原子，羟基，卤素原子，烷基，烷氧基，烯基，芳基，芳烷基，烷氧基羰基或芳基羰基; R4，R5，R6和R7相同或不同，各自表示氢原子，羟基，卤素原子，烷基，环烷基，烷氧基，烯基，芳基或芳烷基 ; n表示4〜7的整数。

27. 发明授权

US5380618A Micropattern-forming material having a low molecular weight novolak resin, a quinone diazide sulfonyl ester and a solvent 失效
标题翻译：具有低分子量酚醛清漆树脂，醌二叠氮磺酰酯和溶剂的微图案形成材料
公开(公告)号：US5380618A
公开(公告)日：1995-01-10
申请号：US230020
申请日：1994-04-19
申请人： Tadayoshi Kokubo , Kazuya Uenishi , Shiro Tan , Wataru Ishii
发明人： Tadayoshi Kokubo , Kazuya Uenishi , Shiro Tan , Wataru Ishii
IPC分类号： C08K5/42 , C09D161/06 , G03F7/022 , G03F7/023 , H01L21/027 , H01L21/30 , G03F7/30
CPC分类号： G03F7/0236 , C08K5/42 , C09D161/06 , G03F7/022
摘要： A micropattern-forming, light sensitive resin composition is disclosed. The composition comprises (a) a novolak resin comprising a condensate between formaldehyde and a mixture of m-cresol and p-cresol with a m-cresol to p-cresol charging weight ratio of from 45/55 to 60/40, wherein the novolak resin has the following characteristics: (i) a dissolving rate of 20 to 800 .ANG./sec in an aqueous solution of tetramethylammonium hydroxide (TMAH) and an alkali activity of 0.131N, (ii) a weight average molecular weight of 1000 to 6000 calculated as polystyrene equivalent, and (iii) a non-exposed dissolving rate of equal to or more than 100 .ANG./sec in an aqueous solution of TMAH with an alkali activity of 0.262N; (b) a light-sensitive substance of 1,2-naphthoquinonediazide-4-sulfonyl ester, and (c) a solvent capable of dissolving the novolak resin and the light-sensitive substance; wherein the novolak resin, the light-sensitive substance, and the solvent are present in such amounts that a 1.0 micron thick resist formed of the material has an optical density at 382 nm of 0.1 to 0.4 .mu.m.sup.-1. Also described is a micropattern-forming process having the steps of: (1) spin coating a substrate with the light-sensitive resin composition; (2) drying the light-sensitive composition; (3) exposing the dried light-sensitive composition using deep UV having a wavelength not longer than about 320 nm; and (4) developing the exposed light-sensitive composition.
摘要翻译：公开了一种形成微图案的光敏树脂组合物。所述组合物包含（a）包含甲醛与间甲酚与对甲酚的混合物之间的缩合物的酚醛清漆树脂，间甲酚与对甲酚的重量比为45/55至60/40，其中酚醛清漆树脂具有以下特征：（i）在四甲基氢氧化铵（TMAH）的水溶液中的溶解速率为20-800μG/ s，碱性活性为0.131N，（ii）重均分子量为1000〜6000的计算值作为聚苯乙烯当量，和（iii）在碱性活性为0.262N的TMAH的水溶液中等于或大于100安培/秒的未暴露的溶解速率; （b）1,2-萘醌二叠氮化物-4-磺酰基酯的光敏物质，和（c）可溶解酚醛清漆树脂和光敏物质的溶剂; 其中酚醛清漆树脂，感光物质和溶剂的存在量使得由该材料形成的1.0微米厚的抗蚀剂的光密度在382nm为0.1至0.4μm-1。还描述了一种微图案形成方法，其具有以下步骤：（1）用感光树脂组合物旋涂基材; （2）干燥感光组合物; （3）使用波长不大于约320nm的深UV曝光干燥的感光组合物; 和（4）显影曝光的感光组合物。

28. 发明授权

US5324619A Positive quinone diazide photoresist composition containing select polyhydroxy additive 失效
标题翻译：含有选择性多羟基添加剂的正醌二叠氮光致抗蚀剂组合物
公开(公告)号：US5324619A
公开(公告)日：1994-06-28
申请号：US857497
申请日：1992-03-25
申请人： Yasumasa Kawabe , Kazuya Uenishi , Tadayoshi Kokubo
发明人： Yasumasa Kawabe , Kazuya Uenishi , Tadayoshi Kokubo
IPC分类号： G03F7/004 , G03F7/022 , H01L21/027 , G03F7/023 , G03C1/61
CPC分类号： G03F7/0226
摘要： A composition, useful for its excellent resolution, sensitivity, development properties, and heat resistance, having an alkali soluble resin and a quinonediazide compound as essential ingredients, and further containing at least one polyhydroxy compound represented by the following formula (I) or (II): ##STR1## wherein R's, which may be the same or different, each represents a hydrogen atom, a halogen atom, a hydroxyl group, an alkyl group, an alkoxy group or --CH.sub.2 N--(--CH.sub.2 COOH).sub.2 ; X represents a --C(.dbd.O)-- group or an --SO.sub.2 -- group; m is an integer of 1 to 3; and n is an integer of 1 to 4.
摘要翻译：一种组合物，其具有优异的分辨率，灵敏度，显影性能和耐热性，具有碱溶性树脂和醌二叠氮化合物作为必要成分，并且还含有至少一种由下式（I）或（II）表示的多羟基化合物）：其中R可以相同或不同，分别表示氢原子，卤素原子，羟基，烷基，烷氧基或-CH2N- （-CH 2 COOH）2; X表示-C（= O） - 基或-SO 2 - 基; m为1〜3的整数。 n为1〜4的整数。

29. 发明授权

US5324618A Positive type quinonediazide photoresist composition containing select tetraphenolic additive 失效
标题翻译：含有选择性四酚类添加剂的正型醌二叠氮化物光致抗蚀剂组合物
公开(公告)号：US5324618A
公开(公告)日：1994-06-28
申请号：US985259
申请日：1992-12-03
申请人： Yasumasa Kawabe , Shiro Tan , Tadayoshi Kokubo
发明人： Yasumasa Kawabe , Shiro Tan , Tadayoshi Kokubo
IPC分类号： G03F7/022 , H01L21/027 , G03F7/023 , G03C1/61
CPC分类号： G03F7/0226
摘要： Disclosed is a positive type photoresist composition comprising an alkali-soluble resin, a quinone diazide compound and a compound represented by the following general formula (I): ##STR1## wherein R.sub.1, R.sub.2, R.sub.3 and R.sub.4 which may be the same or different and in which four groups for each group may be different from each other at the same time, each represents a hydrogen atom, a hydroxyl group, a halogen atom, an alkyl group, an alkoxy group, a nitro group, an alkenyl group, an aryl group, an aralkyl group, an alkoxycarbonyl group, an arylcarbonyl group, an acyloxy group, an acyl group, an aryloxy group or an aralkoxy group; a, b, d and e each represents 0 or an integer 1 to 3; and c represents 0 or 1, with the proviso that a, b, c, d and e satisfy the relationship (a+b+c+d+e.gtoreq.2), at least one of a and d is 1 or more and at least one of b and e is 1 or more.
摘要翻译：公开了一种正型光致抗蚀剂组合物，其包含碱溶性树脂，醌二叠氮化合物和由以下通式（I）表示的化合物：其中R 1，R 2，R 3和R 4可以相同或者不同，并且每个基团的四个基团可以同时彼此不同，各自表示氢原子，羟基，卤素原子，烷基，烷氧基，硝基，烯基芳基，芳烷基，烷氧基羰基，芳基羰基，酰氧基，酰基，芳氧基或芳烷氧基; a，b，d和e各自表示0或整数1〜3; 并且c表示0或1，条件是a，b，c，d和e满足关系式（a + b + c + d + e> / = 2），a和d中的至少一个为1或更大 b和e中的至少一个为1以上。

30. 发明授权

US5318875A Positive quinonediazide photoresist composition containing select hydroxyphenol additive 失效
标题翻译：含有选择性羟基苯酚添加剂的正醌二叠氮化物光致抗蚀剂组合物
公开(公告)号：US5318875A
公开(公告)日：1994-06-07
申请号：US15921
申请日：1993-02-10
申请人： Yasumasa Kawabe , Toshiaki Aoai , Tadayoshi Kokubo , Shiro Tan
发明人： Yasumasa Kawabe , Toshiaki Aoai , Tadayoshi Kokubo , Shiro Tan
IPC分类号： C07C45/46 , G03F7/022 , G03F7/023 , G03C1/61
CPC分类号： G03F7/0226 , C07C45/46 , G03F7/022
摘要： A positive photoresist composition includes an alkali-soluble resin, a quinonediazide compound and a compound selected from the group consisting of compounds represented by formulae (I), (II) and (III): ##STR1## wherein R.sub.1 to R.sub.27, which may be the same or different, each represents a hydrogen atom, hydroxyl group, halogen atom, alkyl group, alkoxy group, nitro group, alkenyl group, aryl group, aralkyl group, alkoxycarbonyl group, arylcarbonyl group, acyloxy group, acyl group, aryloxy group or aralkoxy group; ##STR2## wherein R.sub.31 represents an organic group, single bond, ##STR3## R.sub.32 represents a hydrogen atom, monovalent organic group or ##STR4## R.sub.33 to R.sub.37, which may be the same or different, and in which not all four groups for each of R.sub.33 to R.sub.37 may be the same at the same time, each represents a hydrogen atom, hydroxyl group, halogen atom, alkyl group, alkoxy group or alkenyl group, with the proviso that at least one of R.sub.33 to R.sub.35 is a hydroxyl group; X represents a divalent organic group; and m represents an integer 0 or 1; ##STR5## wherein R.sub.41 to R.sub.44, which may be the same or different and in which not all four groups for each of R.sub.41 to R.sub.44 may be the same at the same time, each represents a hydrogen atom, hydroxyl group, halogen atom, alkyl group, alkoxy group or alkenyl group; R.sub.45 and R.sub.46 each represents a hydrogen atom, alkyl group or ##STR6## a and c each represents an integer 0 or 1; and b represents an integer from 1 to 4.
摘要翻译：正型光致抗蚀剂组合物包括碱溶性树脂，醌二叠氮化合物和选自由式（I），（II）和（III）表示的化合物的化合物：其中R 1至R 27，可以相同或不同，分别表示氢原子，羟基，卤素原子，烷基，烷氧基，硝基，烯基，芳基，芳烷基，烷氧基羰基，芳基羰基，酰氧基，酰基，芳氧基或芳烷氧基; （II）其中R31表示有机基团，单键，R32表示氢原子，一价有机基团或R33至R37，其可以相同或不同，并且其中并不全部为四 R 33〜R 37各自可以相同，各自表示氢原子，羟基，卤素原子，烷基，烷氧基或烯基，条件是R 33〜R 35中的至少一个为羟基; X表示二价有机基团; m表示0或1的整数; （III）其中R41〜R44可以相同或不同，并且其中R41至R44中的每一个不是全部四个基团可以同时相同，各自表示氢原子，羟基，卤素原子，烷基，烷氧基或烯基; R 45和R 46各自表示氢原子，烷基或者a和c各自表示0或1的整数; b表示1〜4的整数。

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