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    • 3. 发明授权
    • Positive-type photoresist composition
    • 正型光致抗蚀剂组合物
    • US5340686A
    • 1994-08-23
    • US173924
    • 1993-12-28
    • Shinji SakaguchiShiro TanTadayoshi Kokubo
    • Shinji SakaguchiShiro TanTadayoshi Kokubo
    • G03F7/004G03F7/022G03F7/023H01L21/027H01L21/30G03F7/30
    • G03F7/0226G03F7/0236
    • A positive-type photoresist composition is described as including:(1) an alkali-soluble phenol novolak having a degree of dispersion of from 1.5 to 4.0;(2) a 1,2-quinone diazide compound; and(3) from 2 to 30% by weight, based on the above-mentioned novolak, of a low molecular weight compound having a total of from 12 to 50 carbon atoms per molecule and 2 to 8 phenolic hydroxyl groups per molecule. The degree of dispersion is determined from a weight-average molecular weight of the novolak and a number-average molecular weight of the novolak, both the weight-average and number-average molecular weights being obtained by gel penetration chromatography (GPC) defined by using standard polystyrene as a reference, such that the degree of dispersion is a ratio of the weight-average molecular weight to the number average molecular weight.The positive-type photoresist composition of the present invention is excellent in development latitude and has a high sensitivity and a high resolving power. Thus, it is suitable for use in, for example, the production of semiconductors such as integrated circuits, the production of circuit substrates for thermal heads, and photofabrication processes.
    • 正型光致抗蚀剂组合物包括:(1)分散度为1.5〜4.0的碱溶性酚醛清漆; (2)1,2-醌二叠氮化合物; 和(3)基于上述酚醛清漆的2至30重量%的每分子具有总共12至50个碳原子的低分子量化合物和每分子2至8个酚羟基。 分散度由酚醛清漆的重均分子量和酚醛清漆的数均分子量确定,通过使用通过凝胶渗透色谱法(GPC)得到的重均分子量和数均分子量均为 标准聚苯乙烯作为参考,使得分散度是重均分子量与数均分子量的比率。 本发明的正型光致抗蚀剂组合物的显影宽度优良,灵敏度高,分辨率高。 因此,适用于例如集成电路等半导体的制造,热敏头的电路基板的制造以及光制造工序。
    • 7. 发明授权
    • Positive photoresist composition
    • 正光致抗蚀剂组合物
    • US5565300A
    • 1996-10-15
    • US647904
    • 1991-01-30
    • Kazuya UenishiShinji SakaguchiTadayoshi Kokubo
    • Kazuya UenishiShinji SakaguchiTadayoshi Kokubo
    • G03F7/023C07C309/76G03F7/022H01L21/027
    • G03F7/022C07C309/76C07C2102/10
    • A photoresist composition is disclosed containing an alkali-soluble resin and a photosensitive substance obtained by reaction of a polyhydroxy compound and (a) a 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride(s), said photosensitive substance being a mixture of photosensitive compounds (1) to (3):(1) a photosensitive compound having at least one hydroxyl group per molecule and having a number ratio of 1,2-naphthoquinonediazido-5-(and/or -4-)sulfonyl chloride sulfonate groups to hydroxyl groups within the range of from 3 to 20, contained in the photosensitive substance in an amount of 50 wt % or more;(2) a photosensitive compound where all the hydroxyl groups in the polyhydroxy compound have been 1,2-naphthoquinonediazidosulfonyl-esterified, contained in the photosensitive substance in an amount of 30 wt % to 0 wt %; and(3) a photosensitive compound having three or more hydroxyl groups which have not been 1,2-naphthoquinonediazidosulfonyl-esterified per molecule, contained in the photosensitive substance in an amount of 20 wt % to 0 wt %.The composition is suitable to exposure with g-ray, i-ray and excimer laser to provide a sharp resist image. The photoresist composition also has high sensitivity, high resolving power, precise reproducibility to provide resist images having good sectional shapes, broad development latitude, high heat resistance and good storage stability.
    • 公开了含有碱溶性树脂和通过多羟基化合物和(a)1,2-萘醌二叠氮基-5-(和/或-4-)磺酰氯反应获得的光敏物质的光致抗蚀剂组合物,所述光致抗蚀剂组合物 感光性物质为光敏性化合物(1)〜(3)的混合物:(1)每分子具有至少一个羟基并且具有1,2-萘醌二叠氮基-5-(和/或-4 - )磺酰氯磺酸盐基团,其含量为50重量%以上的含有3〜20重量份的光敏物质的羟基; (2)感光性物质中含有多重羟基化合物中的全部羟基的化合物为感光性物质中的含量为30重量%〜0重量%的感光性化合物, 和(3)感光性物质中含有20重量%〜0重量%的含有3个以上不具有每分子1,2-萘醌二氮杂磺酰基酯化的羟基的感光性化合物。 该组合物适用于用g射线,i射线和准分子激光曝光以提供清晰的抗蚀剂图像。 光致抗蚀剂组合物还具有高灵敏度,高分辨能力,精确的再现性,以提供具有良好的截面形状,宽的显影宽度,高耐热性和良好的储存稳定性的抗蚀剂图像。
    • 9. 发明授权
    • Negative type photoresist composition
    • 负型光刻胶组合物
    • US5340697A
    • 1994-08-23
    • US73564
    • 1993-06-09
    • Hiroshi YoshimotoKazuya UenishiTadayoshi Kokubo
    • Hiroshi YoshimotoKazuya UenishiTadayoshi Kokubo
    • G03F7/004G03F7/029G03F7/031G03F7/038H01L21/027G03C1/492
    • G03F7/0045G03F7/031G03F7/038Y10S430/12Y10S430/121
    • A negative type photoresist composition comprising a light-sensitive s-triazine compound represented by formula (I), an acid-crosslinkable material, and an alkali soluble resin: ##STR1## wherein R.sub.1 and R.sub.2, which may be the same or different, each represents a hydrogen atom, an alkyl group, a substituted alkyl group, an aryl group, a substituted aryl group, a group represented by formula (II) or (III), or R.sub.1 and R.sub.2 may form a heterocyclic group consisting of non-metal atoms bonded to a nitrogen atom; R.sub.3 and R.sub.4 each represent a hydrogen atom, a halogen atom, an alkyl group, or an alkoxy group; X and Y, which may be the same or different, each represents a chlorine atom or a bromine atom; and m and n each represents 0, 1 or 2; ##STR2## wherein R.sub.5 represents an alkyl group, a substituted alkyl group, an aryl group, or a substituted aryl group; and R.sub.6 and R.sub.7, which may be the same or different, each represents a hydrogen atom, an alkyl group, a substituted alkyl group, an aryl group, or a substituted aryl group.
    • 一种负型光致抗蚀剂组合物,其包含由式(I)表示的光敏均三嗪化合物,酸可交联物质和碱溶性树脂:其中R 1和R 2可以相同或不同, 不同的是,各自表示氢原子,烷基,取代的烷基,芳基,取代的芳基,由式(II)或(III)表示的基团,或者R 1和R 2可以形成由 键合到氮原子上的非金属原子; R3和R4各自表示氢原子,卤素原子,烷基或烷氧基; X和Y可以相同或不同,各自表示氯原子或溴原子; m和n各自表示0,1或2; (II)其中R 5表示烷基,取代的烷基,芳基或取代的芳基; R 6和R 7可以相同或不同,表示氢原子,烷基,取代的烷基,芳基或取代的芳基。