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21. 发明申请

US20060267011A1 Image display device and method for manufacturing the same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US20060267011A1
公开(公告)日：2006-11-30
申请号：US11441021
申请日：2006-05-26
申请人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
发明人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
IPC分类号： H01L31/00
CPC分类号： H01L21/02691 , H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10S438/949
摘要： Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-crystallized while growing crystal grains laterally. Further a second rapid thermal treatment is performed all over the panel so as to reduce defects in the crystal grains in a region PSI poly-crystallized by the aforementioned energy beam. Thus, a high-quality polycrystalline semiconductor thin film serving as TFTs for a high-performance circuit and having a high on-current, a low threshold value, a low variation and a sharp leading edge characteristic is obtained. Concurrently, the precursor semiconductor layer in the other region is poly-crystallized by the second rapid thermal treatment so as to obtain a low-quality polycrystalline semiconductor thin film serving as pixel circuit TFTs and having a low on-current and properties of a low leak current and a high withstand voltage due to its high resistance. Accordingly, it is possible to form polycrystalline semiconductor TFTs high in driving performance and TFTs having properties of a low leak current and a high withstand voltage concurrently on one and the same insulating substrate.
摘要翻译：用作为底涂层的绝缘层UCL的绝缘基板GLS上的前体半导体膜PCS中，仅配置构成高性能电路的TFT的区域，用第一能量束LSR照射多晶化，横向生长晶粒。此外，在整个面板上进行第二快速热处理，以便减少通过上述能量束多晶化的区域PSI中的晶粒的缺陷。因此，获得了用作高性能电路的TFT并具有高导通电流，低阈值，低变化和尖锐前沿特性的高质量多晶半导体薄膜。同时，通过第二快速热处理，另一区域中的前体半导体层被多晶化，以获得用作像素电路TFT的低品质多晶半导体薄膜，并且具有低导通电流和低泄漏性由于其高电阻，电流和高耐压。因此，可以在同一绝缘基板上同时形成具有高驱动性能的多晶半导体TFT和具有低漏电流和高耐受电压的特性的TFT。

22. 发明授权

US07384810B2 Image display device and method for manufacturing the same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US07384810B2
公开(公告)日：2008-06-10
申请号：US11441021
申请日：2006-05-26
申请人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
发明人： Mitsuharu Tai , Mutsuko Hatano , Takeshi Sato , Seongkee Park , Kiyoshi Ouchi
IPC分类号： H01L21/00
CPC分类号： H01L21/02691 , H01L21/02675 , H01L21/2026 , H01L27/1285 , H01L27/1296 , Y10S438/949
摘要： Only a region where TFTs constituting a high-performance circuit will be disposed in a precursor semiconductor film PCS on an insulating substrate GLS with an insulating layer UCL serving as an undercoat is irradiated with a first energy beam LSR so as to be poly-crystallized while growing crystal grains laterally. Further a second rapid thermal treatment is performed all over the panel so as to reduce defects in the crystal grains in a region PSI poly-crystallized by the aforementioned energy beam. Thus, a high-quality polycrystalline semiconductor thin film serving as TFTs for a high-performance circuit and having a high on-current, a low threshold value, a low variation and a sharp leading edge characteristic is obtained. Concurrently, the precursor semiconductor layer in the other region is poly-crystallized by the second rapid thermal treatment so as to obtain a low-quality polycrystalline semiconductor thin film serving as pixel circuit TFTs and having a low on-current and properties of a low leak current and a high withstand voltage due to its high resistance. Accordingly, it is possible to form polycrystalline semiconductor TFTs high in driving performance and TFTs having properties of a low leak current and a high withstand voltage concurrently on one and the same insulating substrate.
摘要翻译：用作为底涂层的绝缘层UCL的绝缘基板GLS上的前体半导体膜PCS中，仅配置构成高性能电路的TFT的区域，用第一能量束LSR照射多晶化，横向生长晶粒。此外，在整个面板上进行第二快速热处理，以便减少通过上述能量束多晶化的区域PSI中的晶粒的缺陷。因此，获得了用作高性能电路的TFT并具有高导通电流，低阈值，低变化和尖锐前沿特性的高质量多晶半导体薄膜。同时，通过第二快速热处理，另一区域中的前体半导体层被多晶化，以获得用作像素电路TFT的低品质多晶半导体薄膜，并且具有低导通电流和低泄漏性由于其高电阻，电流和高耐压。因此，可以在同一绝缘基板上同时形成具有高驱动性能的多晶半导体TFT和具有低漏电流和高耐受电压的特性的TFT。

23. 发明授权

US07902003B2 Semiconductor device and method for manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07902003B2
公开(公告)日：2011-03-08
申请号：US11620154
申请日：2007-01-05
申请人： Kiyoshi Ouchi , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
发明人： Kiyoshi Ouchi , Mutsuko Hatano , Takeshi Sato , Mitsuharu Tai
IPC分类号： H01L21/84
CPC分类号： H01L21/02683 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L27/1285
摘要： An image display device capable of high-resolution and smooth moving image display, equipped with TFTs in an n-type (or p-type) semiconductor layer with a high on-off ratio and a low resistance. In polysilicon crystallization by laser annealing, an n-type (or p-type) semiconductor layer with a low resistance is produced by performing the following processes in order: implanting nitrogen (N) ions into an amorphous silicon precursor semiconductor film; laser crystallization; implanting n-type (or p-type) dopant ions; and annealing for dopant activation. When fabricating TFTs, this low-resistance semiconductor layer is used to form a source and a drain. Since C, N, and O impurities decrease the mobility of the TFTs, polysilicon is used in which the contaminants concentrations meet the following conditions: carbon concentration ≦3×1019 cm−3, nitrogen concentration ≦5×1017 cm−3, and oxygen concentration ≦3×1019 cm−3.
摘要翻译：一种具有高分辨率和平滑运动图像显示的图像显示装置，在具有高开关比和低电阻的n型（或p型）半导体层中配备有TFT。在通过激光退火的多晶硅结晶中，通过以下步骤进行以下工序来制造具有低电阻的n型（或p型）半导体层：将氮（N）离子注入到非晶硅前驱体半导体膜中; 激光结晶; 注入n型（或p型）掺杂剂离子; 并进行掺杂剂激活退火。当制造TFT时，该低电阻半导体层用于形成源极和漏极。由于C，N和O杂质降低了TFT的迁移率，因此使用多晶硅，其中污染物浓度满足以下条件：碳浓度nlE 3×1019 cm -3，氮浓度NlE 5×1017 cm-3，和氧浓度nlE; 3×1019 cm-3。

24. 发明申请

US20080023704A1 Display Device and Fabrication Method Thereof 审中-公开
标题翻译：显示装置及其制作方法
公开(公告)号：US20080023704A1
公开(公告)日：2008-01-31
申请号：US11782701
申请日：2007-07-25
申请人： TAKESHI NODA , Takahiro Kamo , Eiji Oue , Mutsuko Hatano , Takeshi Sato
发明人： TAKESHI NODA , Takahiro Kamo , Eiji Oue , Mutsuko Hatano , Takeshi Sato
IPC分类号： H01L29/04 , H01L21/00
CPC分类号： H01L29/04 , H01L21/02532 , H01L21/02683 , H01L21/02691 , H01L27/1248 , H01L27/1285
摘要： The present invention obtains a system-in-panel display device using a high-performance thin film transistor by suppressing aggregation of a molten semiconductor at the time of allowing strip-like pseudo-single crystal to grow continuously with a direction control by radiating beams of continuous oscillation laser to a semiconductor film made of silicon while scanning. A display device includes a silicon nitride film formed on the insulation substrate, a silicon oxide film formed on the silicon nitride film, a semiconductor film formed on the silicon oxide film, and a thin film transistor which uses the semiconductor film. Here, the silicon oxide film is constituted of a first silicon oxide film formed using SiH4 and N2O as raw material gases and a second silicon oxide film formed using a TEOS gas as a raw material gas, and the semiconductor film is made of pseudo-single crystal having strip-like grains.
摘要翻译：本发明通过抑制带状伪单晶在通过辐射光束的方向控制而连续生长时，通过抑制熔融半导体的聚集来获得使用高性能薄膜晶体管的面板内系统显示装置在扫描时对由硅制成的半导体膜进行连续振荡激光。显示装置包括形成在绝缘基板上的氮化硅膜，形成在氮化硅膜上的氧化硅膜，形成在氧化硅膜上的半导体膜，以及使用该半导体膜的薄膜晶体管。这里，氧化硅膜由使用SiH 4 N 2和N 2 O作为原料气体形成的第一氧化硅膜和使用TEOS形成的第二氧化硅膜构成气体作为原料气体，半导体膜由具有带状粒子的假单晶构成。

25. 发明授权

US08963171B2 Image display device and the method for manufacturing the same 有权
标题翻译：图像显示装置及其制造方法
公开(公告)号：US08963171B2
公开(公告)日：2015-02-24
申请号：US13792446
申请日：2013-03-11
申请人： Takahide Kuranaga , Takashi Hattori , Naoya Okada , Mutsuko Hatano
发明人： Takahide Kuranaga , Takashi Hattori , Naoya Okada , Mutsuko Hatano
IPC分类号： H01L51/50 , H01L21/00 , H01J1/62 , H01L51/52 , G02F1/1333
CPC分类号： H01L51/5253 , G02F1/133351 , H01L51/5256 , H01L2251/566
摘要： An image display device includes a resin film, an organic film which is formed above the resin film, a circuit layer which is formed above the organic film and includes at least a thin film transistor, and a barrier layer which is formed between the organic film and the circuit layer. The organic film has a first surface which faces the circuit layer and a side surface which crosses the first surface. The barrier layer covers the first surface and the side surface.
摘要翻译：图像显示装置包括树脂膜，形成在树脂膜上方的有机膜，形成在有机膜上方并且至少包括薄膜晶体管的电路层，以及形成在有机膜之间的阻挡层和电路层。有机膜具有面向电路层的第一表面和与第一表面交叉的侧表面。阻挡层覆盖第一表面和侧表面。

26. 发明授权

US07834353B2 Method of manufacturing display device 有权
标题翻译：显示装置的制造方法
公开(公告)号：US07834353B2
公开(公告)日：2010-11-16
申请号：US12021714
申请日：2008-01-29
申请人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
发明人： Mikio Hongo , Sachio Uto , Mineo Nomoto , Toshihiko Nakata , Mutsuko Hatano , Shinya Yamaguchi , Makoto Ohkura
IPC分类号： H01L31/0376 , H01L21/00
CPC分类号： H01L29/04 , B23K26/0622 , B23K26/064 , B23K26/0648 , B23K26/066 , B23K26/0665 , B23K26/0732 , H01L21/02422 , H01L21/02532 , H01L21/02678 , H01L21/02683 , H01L21/268 , H01L27/1285 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： A TFT device having a pixel portion and a driving circuit portion formed on a glass substrate; wherein at least the active layer (active region) of a transistor constituting said driving circuit comprises polycrystalline silicon including crystals that do not have crystal grain boundaries which cross the direction of current flow.
摘要翻译：一种具有形成在玻璃基板上的像素部分和驱动电路部分的TFT器件; 其中构成所述驱动电路的晶体管的至少有源层（有源区）包括多晶硅，其包括不具有与电流流动方向交叉的晶界的晶体。

27. 发明申请

US20100214525A1 IMAGE DISPLAY DEVICE 审中-公开
标题翻译：图像显示设备
公开(公告)号：US20100214525A1
公开(公告)日：2010-08-26
申请号：US12702881
申请日：2010-02-09
申请人： Shinya Yamaguchi , Mutsuko Hatano , Takashi Hattori , Naoya Okada
发明人： Shinya Yamaguchi , Mutsuko Hatano , Takashi Hattori , Naoya Okada
IPC分类号： G02F1/1333 , H01J1/62 , H05K1/00
CPC分类号： G02F1/133305 , G02F2201/54
摘要： Provided is an image display device, including: a first flexible substrate; and a circuit-forming layer constituting an image display area, the circuit-forming layer being made to adhere to one of surfaces of the first flexible substrate, in which, when the first flexible substrate has a thickness of t2, the circuit-forming layer has a thickness of t1 satisfying the following Equation (1): t1≧3/40×(t2-23) (1).
摘要翻译：提供一种图像显示装置，包括：第一柔性基板; 以及构成图像显示区域的电路形成层，所述电路形成层粘附到所述第一柔性基板的一个表面上，其中当所述第一柔性基板具有厚度为t2时，所述电路形成层具有满足下述式（1）的t1的厚度：t1≥3/ 40×（t2-23）（1）。

28. 发明授权

US07666769B2 Method for fabricating image display device 有权
标题翻译：图像显示装置的制造方法
公开(公告)号：US07666769B2
公开(公告)日：2010-02-23
申请号：US11702576
申请日：2007-02-06
申请人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
发明人： Mutsuko Hatano , Shinya Yamaguchi , Takeo Shiba , Mitsuharu Tai , Hajime Akimoto
IPC分类号： H01L21/20
CPC分类号： H01L21/02683 , G02F1/13454 , H01L21/02532 , H01L21/02609 , H01L21/2026 , H01L27/12 , H01L27/1285 , H01L29/04
摘要： There is provided a method for fabricating an image display device having an active matrix substrate including high-performance transistor circuits operating with high mobility as drive circuits for driving pixel portions which are arranged as a matrix. The portion of a polysilicon film formed in a drive circuit region DAR1 provided on the periphery of the pixel region PAR of the active matrix substrate SUB1 composing the image display device is irradiated and scanned with a pulse modulated laser beam or a pseudo CW laser beam to be reformed into a quasi-strip-like-crystal silicon film having a crystal boundary continuous in the scanning direction so that discrete reformed regions each composed of the quasi-strip-like-crystal silicon film are formed. In virtual tiles TL composed of the discrete reformed regions, drive circuits having active elements such as thin-film transistors or the like are formed such that the channel directions thereof coincide with the direction of crystal growth in the quasi-strip-like-crystal silicon film.
摘要翻译：提供一种制造具有有源矩阵基板的图像显示装置的方法，所述有源矩阵基板包括以高迁移率运行的高性能晶体管电路作为用于驱动作为矩阵布置的像素部分的驱动电路。形成在设置在构成图像显示装置的有源矩阵基板SUB1的像素区域PAR的周围的驱动电路区域DAR1中的多晶硅膜的部分被照射并用脉冲调制激光束或伪CW激光束扫描重新形成具有在扫描方向上连续的晶体边界的准带状晶体硅膜，从而形成各自由准带状晶体硅膜构成的离散重整区域。在由分立重构区域构成的虚拟瓦片TL中，形成具有诸如薄膜晶体管等有源元件的驱动电路，使得其沟道方向与准带状晶体硅中的晶体生长方向一致电影。

29. 发明授权

US07586554B2 Liquid crystal display device and dielectric film usable in the liquid crystal display device 有权
标题翻译：可用于液晶显示装置的液晶显示装置和电介质膜
公开(公告)号：US07586554B2
公开(公告)日：2009-09-08
申请号：US11583882
申请日：2006-10-20
申请人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
发明人： Daisuke Ryuzaki , Kazuyoshi Torii , Mutsuko Hatano , Daisuke Sonoda , Toshiki Kaneko
IPC分类号： G02F1/136
CPC分类号： G02F1/1362 , G02F1/133345 , G02F2202/02 , H01L21/02126 , H01L21/02222 , H01L21/02282 , H01L21/3122 , H01L21/31633 , H01L21/3185 , Y10T428/10
摘要： The present invention provides a liquid crystal display device with high image visibility at low power consumption and produced at low cost by using an interlayer dielectric film, which has low dielectric constant, high heat-resistant property, high optical transmissivity, high film thickness and high flattening property produced at low cost. An organic siloxane dielectric film is used as an interlayer dielectric film of the liquid crystal display device. A ratio of nitrogen content to silicon content (Ni content/Si content) in the interlayer dielectric film is controlled to 0.04 or more in the element ratio. The limiting film thickness to suppress and limit the cracking caused by the thickening of the interlayer dielectric film is set to 1.5 μm or more.
摘要翻译：本发明提供一种低功耗的高图像可见度的液晶显示装置，通过使用具有低介电常数，高耐热性，高透光率，高膜厚和高的层间绝缘膜以低成本生产的液晶显示装置以低成本生产的扁平性。使用有机硅氧烷介电膜作为液晶显示装置的层间电介质膜。层间电介质膜中的氮含量与硅含量（Ni含量/ Si含量）的比例以元素比控制在0.04以上。抑制和限制由层间电介质膜的增厚引起的裂纹的限制膜厚设定为1.5μm以上。

30. 发明申请

US20080292786A1 Method of manufacturing display device 审中-公开
标题翻译：显示装置的制造方法
公开(公告)号：US20080292786A1
公开(公告)日：2008-11-27
申请号：US12153568
申请日：2008-05-21
申请人： Mutsuko Hatano , Takashi Hattori
发明人： Mutsuko Hatano , Takashi Hattori
IPC分类号： B05D5/06
CPC分类号： H01L27/1266 , G02F1/133305 , G02F1/1368 , H01L27/1214
摘要： Provided is a method of manufacturing a display device having a step of forming a resin material layer by curing a resin coated on the main surface of a glass substrate; a step of forming a display circuit configured by a plurality of lamination material layers on the main surface side of said resin material layer; and a step of generating exfoliation at the interface between said resin material layer and said glass substrate, by irradiating a ultraviolet ray from the surface on the opposite side to the surface provided with said display circuit of said glass substrate, and said resin material layer, from which said glass substrate is removed, is used as a substrate provided with said display circuit.
摘要翻译：提供一种制造显示装置的方法，该显示装置具有通过固化涂覆在玻璃基板的主表面上的树脂来形成树脂材料层的步骤; 在所述树脂材料层的主表面上形成由多层叠材料层构成的显示电路的步骤; 以及通过从设置有所述玻璃基板的所述显示电路的表面的相反侧的表面照射紫外线和所述树脂材料层，在所述树脂材料层和所述玻璃基板之间的界面处产生剥离的步骤，将所述玻璃基板从所述玻璃基板除去，用作设置有所述显示电路的基板。

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