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21. 发明申请

US20100136478A1 Resist composition, method of forming resist pattern, novel compound, and acid generator 有权
标题翻译：抗蚀剂组合物，抗蚀剂图案形成方法，新型化合物和酸发生剂
公开(公告)号：US20100136478A1
公开(公告)日：2010-06-03
申请号：US12591639
申请日：2009-11-25
申请人： Akiya Kawaue , Yoshiyuki Utsumi , Hideo Hada , Takehiro Seshimo , Kensuke Matsuzawa , Keita Ishiduka , Kotaro Endo
发明人： Akiya Kawaue , Yoshiyuki Utsumi , Hideo Hada , Takehiro Seshimo , Kensuke Matsuzawa , Keita Ishiduka , Kotaro Endo
IPC分类号： G03F7/20 , G03F7/004 , C07D327/04 , C07D333/50
CPC分类号： C07D327/04 , C07D307/33 , C07D307/93 , C07D307/94 , C07D309/30 , C07D409/12 , C07D493/18 , C07D497/18 , G03F7/0045 , G03F7/0397 , G03F7/2041
摘要： A resist composition including a base component (A) which exhibits changed solubility in an alkali developing solution under action of acid and an acid-generator component (B) which generates acid upon exposure, the acid-generator component (B) including an acid generator (B1) containing a compound having a cation moiety represented by general formula (I) (in the formula, R5 represents an organic group having a carbonyl group, an ester bond or a sulfonyl group; and Q represents a divalent linking group).
摘要翻译：一种抗蚀剂组合物，其包含在酸的作用下在碱性显影液中溶解度变化的碱成分（A）和曝光时产生酸的酸发生剂成分（B），所述酸发生剂成分（B）含有酸发生剂（B1），其含有具有由通式（I）表示的阳离子部分的化合物（式中，R5表示具有羰基，酯键或磺酰基的有机基团，Q表示二价连接基团）。

22. 发明申请

US20090117490A1 POSITIVE RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN 有权
标题翻译：用于浸润光刻的正极性组合物和形成耐蚀图案的方法
公开(公告)号：US20090117490A1
公开(公告)日：2009-05-07
申请号：US12300760
申请日：2007-04-23
申请人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
发明人： Kotaro Endo , Makiko Irie , Takeshi Iwai , Yoshiyuki Utsumi , Yasuhiro Yoshii , Tsuyoshi Nakamura
IPC分类号： G03F7/027 , G03F7/26
CPC分类号： G03F7/0395 , G03F7/0046 , G03F7/0397 , G03F7/2041 , Y10S430/106 , Y10S430/108 , Y10S430/111
摘要： A positive resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits increased alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a cyclic main chain resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a) derived from an acrylic acid and no fluorine atom.
摘要翻译：本发明的浸渍光刻用正型抗蚀剂组合物包括在酸作用下表现出增加的碱溶性的树脂组分（A）以及在曝光时产生酸的酸发生剂成分（B），其中，所述树脂成分（A）含有含有氟原子且不具有酸解离性基团的环状主链状树脂（A1）和含有结构式单元（a）衍生自丙烯酸而不含氟原子。

23. 发明申请

US20070190448A1 Positive-type resist composition for liquid immersion lithography and method for forming resist pattern 审中-公开
标题翻译：用于液浸光刻的正型抗蚀剂组合物和形成抗蚀剂图案的方法
公开(公告)号：US20070190448A1
公开(公告)日：2007-08-16
申请号：US10591718
申请日：2005-03-07
申请人： Keita Ishiduka , Kotaro Endo
发明人： Keita Ishiduka , Kotaro Endo
IPC分类号： G03C1/00
CPC分类号： G03F7/0046 , C08F220/18 , C08F220/28 , G03F7/0397 , G03F7/2041
摘要： The present invention relates to a positive-type resist composition for liquid immersion lithography and a method of forming a resist pattern, in particular, a positive-type resist composition for liquid immersion lithography that exhibits superior liquid immersion resistance to water; and a method for forming a resist pattern by thereof. The positive-type resist composition for liquid immersion lithography according to the present invention includes a resin component (A) increasing alkali-solubility by acid action; and an acid generator generating acid by exposure; in which, the resin component (A) contains at least one acrylic ester constitutional unit (a1), and one (meth)acrylic ester constitutional unit (a2) having acid dissociable, dissolution inhibiting group, and the constitutional unit (a1) consists of a cyclic group bonded to the acrylic ester of the constitutional unit (a1), and a fluoro organic group bonded to the cyclic group.
摘要翻译：本发明涉及一种用于液浸光刻的正型抗蚀剂组合物和形成抗蚀剂图案的方法，特别涉及一种耐水浸性优良的用于液浸光刻的正型抗蚀剂组合物，以及通过其形成抗蚀剂图案的方法。根据本发明的液浸光刻用正型抗蚀剂组合物包括通过酸作用提高碱溶性的树脂组分（A）和通过暴露产生酸的酸发生剂; 其中，树脂成分（A）含有至少一种丙烯酸酯结构单元（a1）和具有酸解离性，溶解抑制基团的一个（甲基）丙烯酸酯结构单元（a2），结构单元（a1）由与结构单元（a1）的丙烯酸酯键合的环状基团和与该环状基团键合的氟有机基团。

24. 发明申请

US20060184947A1 Distributed system, computer and state transition control method for distributed system 有权
公开(公告)号：US20060184947A1
公开(公告)日：2006-08-17
申请号：US11354034
申请日：2006-02-15
申请人： Kotaro Endo
发明人： Kotaro Endo
IPC分类号： G06F9/46
CPC分类号： G06F9/466 , Y10S707/99944
摘要： In a distributed system in which a plurality of resources execute a distributed transaction, each of the resources changes the state of an own updating process in accordance with an notification from a coordinator. In addition, each of the resources includes a termination protocol unit which collects states of updating processes of the resources, and executes a termination protocol by determining whether to commit or abort the own updating process, on the basis of the collected states of the updating processes, regardless of the notification from the coordinator.

25. 发明申请

US20060166130A1 Photoresist composition and method for forming resist pattern using the same 失效
标题翻译：光刻胶组合物及其形成方法
公开(公告)号：US20060166130A1
公开(公告)日：2006-07-27
申请号：US10547427
申请日：2004-03-24
申请人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida
发明人： Toshiyuki Ogata , Kotaro Endo , Hiromitsu Tsuji , Masaaki Yoshida
IPC分类号： G03C1/76
CPC分类号： G03F7/0046 , G03F7/0395 , Y10S430/108
摘要： A photoresist composition containing a polymer (A) containing an alkali-soluble constituent unit (a1) containing an alicyclic group having both a fluorine atom or a fluorinated alkyl group (i) and an alcoholic hydroxyl group (ii), whose alkali-solubility is changeable by an action of an acid; an acid generator (B) which generates an acid by light irradiation; and a dissolution inhibitor (C) having a fluorine atom(s) and/or a nitrogen-containing compound (D) selected from a tertiary amine (d1) having a polar group, a tertiary alkylamine (d2) having 7 or more and 15 or less of carbon atoms or an ammonium salt (d3). The composition has a resist property capable of accomplishing line and space (1:1) of 90 nm or less in good shape as a pattern processing accuracy of a semiconductor integrated circuit by lithography.
摘要翻译： 1.一种光致抗蚀剂组合物，其含有含有具有氟原子或氟代烷基（i）和醇羟基（ii）的脂环族基团的碱溶性结构单元（a1）的聚合物（A），其碱溶性为可以通过酸的作用而变化; 通过光照射产生酸的酸产生剂（B）; 和具有氟原子的溶解抑制剂（C）和/或选自具有极性基团的叔胺（d1），具有7以上的叔烷基胺（d2）和15以上的含氮化合物（D）或更少的碳原子或铵盐（d3）。该组合物具有能够通过光刻作为半导体集成电路的图案处理精度而实现90nm或更小的线和空间（1：1）的良好形状的抗蚀剂性质。

26. 发明授权

US08566948B2 Method and system for controlling access to logical unit of a storage device shared by computers 有权
标题翻译：用于控制计算机共享的存储设备的逻辑单元访问的方法和系统
公开(公告)号：US08566948B2
公开(公告)日：2013-10-22
申请号：US11725472
申请日：2007-03-20
申请人： Kotaro Endo
发明人： Kotaro Endo
IPC分类号： G06F21/10
CPC分类号： G06F21/80
摘要： An acquisition unit of a user terminal acquires an initiator ID including a user ID and a computer ID. The initiator ID is transmitted by a transmitter unit, and then, received by a transmitter/receiver unit of a storage device. A LUDB stores information determining a LU corresponding to each user ID of several users. A masking unit refers to the LUDB to determine the LU corresponding to the user ID. If the received initiator ID differs from an initiator ID stored in a table corresponding to the determined LU, an access control unit refuses access to the LU by the user terminal.
摘要翻译：用户终端的获取单元获取包括用户ID和计算机ID的发起者ID。发起者ID由发送单元发送，然后由存储装置的收发单元接收。 LUDB存储确定与几个用户的每个用户ID相对应的LU的信息。掩蔽单元是指LUDB来确定与用户ID相对应的LU。如果接收到的发起者ID与存储在与所确定的LU相对应的表中的发起者ID不同，则访问控制单元拒绝用户终端访问LU。

27. 发明申请

US20130065180A1 RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN 审中-公开
标题翻译：耐蚀组合物和形成耐力图案的方法
公开(公告)号：US20130065180A1
公开(公告)日：2013-03-14
申请号：US13605338
申请日：2012-09-06
申请人： Tsuyoshi Kurosawa , Kotaro Endo , Yuta Iwasawa , Yoshitaka Komuro , Akiya Kawaue
发明人： Tsuyoshi Kurosawa , Kotaro Endo , Yuta Iwasawa , Yoshitaka Komuro , Akiya Kawaue
IPC分类号： G03F7/004 , G03F7/20
CPC分类号： G03F7/0045 , G03F7/0046 , G03F7/0397 , G03F7/2041
摘要： A resist composition comprising: a base component (A) which exhibits changed solubility in a developing solution under action of acid; an acid-generator component (B) which generates acid upon exposure; and a compound (D1) including of a cation moiety which contains a quaternary nitrogen atom, and an anion moiety represented by formula (d1-an1) or (d1-an2) shown below. In the formulas, X represents a cyclic aliphatic hydrocarbon group of 3 to 30 carbon atoms which may have a substituent; and Y1 represents a fluorinated alkylene group of 1 to 4 carbon atoms which may have a substituent.
摘要翻译：一种抗蚀剂组合物，其包含：在酸的作用下在显影液中表现出改变的溶解度的碱成分（A）暴露时产生酸的酸发生剂组分（B）; 和包含季氮原子的阳离子部分的化合物（D1）和由下式（d1-an1）或（d1-an2）表示的阴离子部分。式中，X表示可以具有取代基的碳原子数3〜30的环状脂肪族烃基， Y1表示可以具有取代基的1〜4个碳原子的氟化亚烷基。

28. 发明授权

US08278025B2 Material for forming resist protection films and method for resist pattern formation with the same 有权
标题翻译：用于形成抗蚀剂保护膜的材料及其抗蚀剂图案形成方法
公开(公告)号：US08278025B2
公开(公告)日：2012-10-02
申请号：US11722797
申请日：2005-12-22
申请人： Keita Ishiduka , Kotaro Endo
发明人： Keita Ishiduka , Kotaro Endo
IPC分类号： G03F7/004 , G03F7/30
CPC分类号： G03F7/11 , C08F220/18 , C08F220/24 , G03F7/0046 , G03F7/2041
摘要： The formation of high-resolution resist patterns by liquid immersion lithography with various fluids is enabled by protecting a resist film from deterioration (such as bridging) during the immersion exposure in a fluid (such as water) and the fluid from deterioration and improving the stability of a resist film in the storage after exposure without increase in the number of treatment steps. A material for forming resist protection films which comprises an alkali-soluble polymer for forming a protective overcoat for a resist film, characterized in that the contact angle of the polymer to water is 90° or above. The polymer is preferably an acrylic polymer which comprises as the essential components constituent units derived from (meth) acrylic acid and constituent units derived from a specific acrylic ester.
摘要翻译：通过在各种流体中通过液浸光刻形成高分辨率抗蚀剂图案可以通过在液体（例如水）浸没暴露期间保护抗蚀剂膜免于劣化（例如桥接），并且使流体变质并提高稳定性的抗蚀剂膜在曝光后的储存中，而不增加处理步骤的数量。一种用于形成抗蚀剂保护膜的材料，其包含用于形成抗蚀剂膜的保护性外涂层的碱溶性聚合物，其特征在于，聚合物与水的接触角为90°或更高。聚合物优选为丙烯酸类聚合物，其包含作为主要组分的构成单元，其衍生自（甲基）丙烯酸和由特定丙烯酸酯衍生的构成单元。

29. 发明授权

US07879529B2 Material for formation of resist protection film and method of forming resist pattern therewith 失效
标题翻译：用于形成抗蚀剂保护膜的材料及其形成抗蚀剂图案的方法
公开(公告)号：US07879529B2
公开(公告)日：2011-02-01
申请号：US11658900
申请日：2005-07-29
申请人： Kotaro Endo , Masaaki Yoshida , Keita Ishizuka
发明人： Kotaro Endo , Masaaki Yoshida , Keita Ishizuka
IPC分类号： G03F7/11 , G03F7/26 , C07D265/00 , C07D285/00
CPC分类号： G03F7/2041 , G03F7/11
摘要： In the liquid immersion lithography process, by simultaneously preventing deterioration of a resist film and deterioration of an immersion liquid employed during liquid immersion lithography which uses various immersion liquids, including water, resistance to post exposure delay of the resist film can be improved without increasing the number of processes, thereby making it possible to form a high resolution resist pattern using liquid immersion lithography. Furthermore, it is possible to apply a high refractive index liquid immersion medium, used in combination with the high refractive index liquid immersion medium, thus making it possible to further improve pattern accuracy. Using a composition comprising an acrylic resin component having characteristics which have substantially no compatibility with a liquid in which a resist film is immersed, particularly water, and are also soluble in alkaline, a protective film is formed on the surface of a resist film used.
摘要翻译：在液浸光刻工艺中，通过同时防止抗蚀剂膜的劣化以及使用包括水在内的各种浸渍液体的液浸光刻中所使用的浸渍液的劣化，可以提高抗蚀剂膜的后曝光延迟性，而不会增加处理次数，从而可以使用液浸光刻法形成高分辨率抗蚀剂图案。此外，可以应用与高折射率浸液介质组合使用的高折射率液浸介质，从而可以进一步提高图案精度。使用包含与浸渍有抗蚀剂膜的液体基本上不相容的特性的丙烯酸树脂组分的组合物，特别是水，并且也可溶于碱性，在所用的抗蚀剂膜的表面上形成保护膜。

30. 发明申请

US20090011375A1 IMMERSION LIQUID FOR LIQUID IMMERSION LITHOGRAPHY PROCESS AND METHOD FOR FORMING RESIST PATTERN USING THE SAME 审中-公开
标题翻译：用于液体渗透光刻方法的浸渍液及其形成耐蚀图案的方法
公开(公告)号：US20090011375A1
公开(公告)日：2009-01-08
申请号：US11597124
申请日：2005-05-24
申请人： Taku Hirayama , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
发明人： Taku Hirayama , Kazumasa Wakiya , Kotaro Endo , Masaaki Yoshida
IPC分类号： G03F7/20 , G03C5/00
CPC分类号： G03F7/2041
摘要： A liquid immersion lithography process is provided. In particular, the liquid immersion lithography process is one in which the resolution of a resist pattern is improved by exposure to light through a liquid having a refractive index higher than that of air and a predetermined thickness, while being arranged on at least a resist film in a pathway allowing exposure light for lithography to reach to the resist film. Accordingly, both the resist film and the liquid used are prevented from deterioration in liquid immersion lithography. Thus, the formation of a high-resolution resist pattern can be attained with liquid immersion lithography. Therefore, the liquid comprised of a silicon-based liquid transparent to exposure light used in the lithography process is employed as an immersion liquid for liquid immersion lithography.
摘要翻译：提供液浸光刻工艺。特别地，液浸式光刻法是通过使折射率高于空气和预定厚度的液体暴露于光而提高抗蚀剂图案的分辨率的方法，同时至少设置抗蚀剂膜在允许用于光刻的曝光光到达抗蚀剂膜的途径中。因此，可以防止所使用的抗蚀剂膜和液体在液浸光刻中的劣化。因此，通过液浸光刻技术可以获得高分辨率抗蚀图案的形成。因此，采用在光刻工艺中使用的曝光用透光性的硅系液体作为液浸式光刻用浸液。

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