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21. 发明申请

US20080164237A1 PIEZOELECTRIC-DRIVEN MEMS DEVICE AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：压电驱动MEMS器件及其制造方法
公开(公告)号：US20080164237A1
公开(公告)日：2008-07-10
申请号：US12038568
申请日：2008-02-27
申请人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
发明人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki
IPC分类号： H01L41/22
CPC分类号： H01H57/00 , B81B3/0021 , H01G5/16 , H01G5/18 , H01H59/0009 , H01H2057/006 , H01L41/0933 , H01L41/094
摘要： A piezoelectric-driven MEMS device can be fabricated reliably and consistently. The piezoelectric-driven MEMS device includes: a movable flat beam having a piezoelectric film disposed above a substrate with a recessed portion such that the piezoelectric film is bridged over the recessed portion, piezoelectric drive mechanisms disposed at both ends of the piezoelectric film and configured to drive the piezoelectric film, and a first electrode disposed at the center of the substrate-side of the piezoelectric film, and a second electrode disposed on a flat part of the recessed portion of the substrate and facing the first electrode of the movable flat beam.
摘要翻译：可以可靠且一致地制造压电驱动的MEMS器件。压电驱动MEMS器件包括：可移动平板光束，其具有设置在具有凹部的基板上方的压电膜，使得压电膜桥接在凹部上，压电驱动机构设置在压电膜的两端并被配置为驱动所述压电膜，以及设置在所述压电膜的基板侧的中心的第一电极，以及设置在所述基板的所述凹部的平坦部分上并且面对所述可动平坦梁的所述第一电极的第二电极。

22. 发明申请

US20080074005A1 PIEZOELECTRIC THIN FILM DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
公开(公告)号：US20080074005A1
公开(公告)日：2008-03-27
申请号：US11946913
申请日：2007-11-29
申请人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya SANO , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H01L41/047
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.

23. 发明申请

US20060103561A1 Digital signal demodulator and wireless receiver using the same 失效
标题翻译：数字信号解调器和无线接收机使用相同
公开(公告)号：US20060103561A1
公开(公告)日：2006-05-18
申请号：US11268615
申请日：2005-11-08
申请人： Kazuhide Abe , Michihiko Nishigaki , Toshihiko Nagano , Takashi Kawakubo
发明人： Kazuhide Abe , Michihiko Nishigaki , Toshihiko Nagano , Takashi Kawakubo
IPC分类号： H03M3/00
CPC分类号： H04L27/2276
摘要： A digital demodulator includes a resonator having a resonance frequency same as a carrier frequency to store a charge corresponding to a digital signal modulated by phase shift keying, a capacitor to store the charge of the resonator, an amplifier including an input node and an output node between which the capacitor is connected to convert a stored charge of the capacitor into a voltage signal, and a controller configured to accumulate in the resonator the charge induced by the frequency signal modulated by phase shift keying in a first control mode and configured to transfer the charge of the resonator to the capacitor in a second control mode, to output the voltage signal corresponding to the stored charge of the capacitor from the output node of the amplifier.
摘要翻译：数字解调器包括具有与载波频率相同的谐振频率的谐振器，以存储与通过相移键控调制的数字信号相对应的电荷，存储谐振器的电荷的电容器，包括输入节点和输出节点的放大器其间连接有电容器以将存储的电容器的电荷转换成电压信号，以及控制器，被配置为在第一控制模式中在谐振器中累积由相移键控调制的频率信号引起的电荷，在第二控制模式下将谐振器充电到电容器，以从放大器的输出节点输出与电容器的存储电荷相对应的电压信号。

24. 发明申请

US20060067840A1 Piezoelectric MEMS element and tunable filter equipped with the piezoelectric MEMS element 失效
标题翻译：配有压电MEMS元件的压电MEMS元件和可调谐滤波器
公开(公告)号：US20060067840A1
公开(公告)日：2006-03-30
申请号：US11229694
申请日：2005-09-20
申请人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Tomio Ono
发明人： Takashi Kawakubo , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Tomio Ono
IPC分类号： F04B43/00 , F04B17/00
CPC分类号： H03H9/542 , H01G5/16 , H01H57/00 , H01H2057/006 , H03H9/605 , H03H2007/008 , H03H2210/025 , H03H2210/033
摘要： In a MEMS type variable capacity having a piezoelectric driving mechanism, a movable head having movable electrodes are arranged thereon, stationary electrodes is positioned to face the movable electrodes, and a piezoelectric driving beam structure is joined to the movable head and have one end fixed to the substrate. The movable electrode and the stationary electrode form a variable capacity. In the variable capacity, the distance and capacitance between the movable electrode and the stationary electrode of the variable capacity can be maintained constant so as to realize a reproducibility and a reliable controllability.
摘要翻译：在具有压电驱动机构的MEMS型可变容量中，具有可移动电极的可动头布置在其上，固定电极被定位成面对可动电极，并且压电驱动梁结构接合到可动头部，并且一端固定到底物。可动电极和固定电极形成可变容量。在可变容量中，可变电容和可变电容的固定电极之间的距离和电容可以保持恒定，从而实现再现性和可靠的可控性。

25. 发明申请

US20060001508A1 Film bulk acoustic-wave resonator (FBAR), filter implemented by FBARs and method for manufacturing FBAR 失效
标题翻译：薄膜体声波谐振器（FBAR），FBAR实现的滤波器和FBAR制造方法
公开(公告)号：US20060001508A1
公开(公告)日：2006-01-05
申请号：US11169645
申请日：2005-06-30
申请人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
发明人： Ryoichi Ohara , Naoko Yanase , Kazuhiko Itaya , Kenya Sano , Takaaki Yasumoto , Kazuhide Abe , Toshihiko Nagano , Michihiko Nishigaki , Takashi Kawakubo
IPC分类号： H03H9/56
CPC分类号： H03H9/02094 , H03H3/04 , H03H9/02133 , H03H9/173 , H03H9/174 , H03H9/703 , H03H2003/021 , H03H2003/023
摘要： A film bulk acoustic-wave resonator encompasses a substrate having a cavity; a bottom electrode partially fixed to the substrate, part of the bottom electrode is mechanically suspended above the cavity; a piezoelectric layer provided on the bottom electrode; and a top electrode provided on the piezoelectric layer having crystal axes oriented along a thickness direction of the piezoelectric layer, a full width at half maximum of the distribution of the orientations of the crystal axes is smaller than or equal to about six degrees.
摘要翻译：薄膜体声波谐振器包括具有空腔的基板; 部分地固定在基板上的底部电极，底部电极的一部分机械地悬挂在空腔上方; 设置在底部电极上的压电层; 以及设置在压电体层上的顶电极，其具有沿着压电体层的厚度方向取向的晶轴，所述晶轴的取向分布的半峰全宽小于或等于约6度。

26. 发明申请

US20050280476A1 Filter control apparatus and filter system 审中-公开
标题翻译：过滤器控制装置和过滤系统
公开(公告)号：US20050280476A1
公开(公告)日：2005-12-22
申请号：US11151343
申请日：2005-06-14
申请人： Kazuhide Abe , Michihiko Nishigaki , Toshihiko Nagano , Ryoichi Ohara , Hiroshi Yoshida , Hiroshi Tsurumi , Takashi Kawakubo
发明人： Kazuhide Abe , Michihiko Nishigaki , Toshihiko Nagano , Ryoichi Ohara , Hiroshi Yoshida , Hiroshi Tsurumi , Takashi Kawakubo
IPC分类号： H03B21/01 , H03H7/01 , H03L7/00 , H03L7/07 , H03L7/081 , H03L7/099
CPC分类号： H03H7/0161 , H03B21/01 , H03L7/07 , H03L7/0805 , H03L7/0812 , H03L7/099 , H03L7/0995
摘要： A filter control apparatus which controls a frequency variable filter capable of changing a transmission band width by controlling a capacitance of at least a portion of a plurality of voltage variable capacitors connected in series and parallel to a resonator has an input unit, and a filter control circuit. The input unit inputs a reference signal with a predetermined reference frequency to the frequency variable filter. The filter control circuit controls a center frequency and the transmission band width of the frequency variable filter by detecting a phase change generated when the reference signal passes through the frequency variable filter and by variably controlling the capacitance of at least a portion of the voltage variable capacitor by using a direct voltage in proportion to the phase change.
摘要翻译：控制能够通过控制串联并联到谐振器的多个电压可变电容器的至少一部分的电容来改变传输带宽的滤波器控制装置具有输入单元和滤波器控制电路。输入单元将具有预定参考频率的参考信号输入到频率可变滤波器。滤波器控制电路通过检测当参考信号通过频率可变滤波器时产生的相位变化并且通过可变地控制电压可变电容器的至少一部分的电容来控制频率可变滤波器的中心频率和传输带宽通过使用与相变成比例的直流电压。

27. 发明申请

US20050184627A1 Piezoelectric thin film device and method for manufacturing the same 失效
标题翻译：压电薄膜器件及其制造方法
公开(公告)号：US20050184627A1
公开(公告)日：2005-08-25
申请号：US11043257
申请日：2005-01-27
申请人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
发明人： Kenya Sano , Ryoichi Ohara , Naoko Yanase , Takaaki Yasumoto , Kazuhiko Itaya , Takashi Kawakubo , Hiroshi Toyoda , Masahiko Hasunuma , Toshihiko Nagano , Kazuhide Abe , Michihiko Nishigaki , Hironobu Shibata
IPC分类号： H01L41/047 , H01L41/22 , H03H3/02 , H03H9/02 , H03H9/15 , H03H9/17
CPC分类号： H03H9/02015 , H01H2057/006 , H01L41/0477 , H01L41/094 , H01L41/316 , H01L41/319 , H03H3/02 , H03H9/02094 , H03H9/173 , H03H9/174 , H03H9/175 , H03H9/542 , H03H9/582 , H03H9/605 , H03H2003/021 , H03H2003/023 , H03H2003/025 , Y10T29/42 , Y10T29/435 , Y10T29/49002 , Y10T29/49005 , Y10T29/49117 , Y10T29/49155
摘要： A piezoelectric thin film device includes an amorphous metal film disposed on a substrate and a piezoelectric film disposed on the amorphous metal. One of crystal axis of the piezoelectric film is aligned in a direction perpendicular to a surface of the amorphous metal.
摘要翻译：压电薄膜器件包括设置在衬底上的非晶金属膜和设置在非晶态金属上的压电膜。压电膜的晶轴之一在垂直于非晶态金属表面的方向上排列。

28. 发明授权

US06870446B2 High frequency filter 有权
标题翻译：高频滤波器
公开(公告)号：US06870446B2
公开(公告)日：2005-03-22
申请号：US10252105
申请日：2002-09-23
申请人： Ryoichi Ohara , Kazuhide Abe , Takashi Kawakubo , Hiroshi Yoshida , Hiroshi Tsurumi , Ryuichi Fujimoto
发明人： Ryoichi Ohara , Kazuhide Abe , Takashi Kawakubo , Hiroshi Yoshida , Hiroshi Tsurumi , Ryuichi Fujimoto
IPC分类号： H03H9/00 , H03H9/54 , H03H9/58 , H03H9/60
CPC分类号： H03H9/605 , H03H9/0095 , H03H9/542 , H03H9/581 , H03H2009/02196
摘要： A high frequency filter comprises thin film piezoelectric resonators connected in series between the input/output nodes, thin film piezoelectric resonators connected in parallel between the input/output nodes and a variable voltage circuit adapted to change the voltage applied to at least either the thin film piezoelectric resonators connected in series or the thin film piezoelectric resonators connected in parallel. The resonance characteristic of at least either the thin film piezoelectric resonators connected in series or the thin film piezoelectric resonator connected in parallel is shifted by changing the voltage applied by the variable voltage circuit to change the pass characteristic of the filter.
摘要翻译：高频滤波器包括串联连接在输入/输出节点之间的薄膜压电谐振器，并联连接在输入/输出节点之间的薄膜压电谐振器和可变电压电路，可变电压电路适于改变施加到至少薄膜的电压串联连接的压电谐振器或并联连接的薄膜压电谐振器。串联连接的薄膜压电谐振器或并联连接的薄膜压电谐振器中的至少一个的谐振特性通过改变由可变电压电路施加的电压来改变滤波器的通过特性而被移位。

29. 发明授权

US06809604B2 Voltage control oscillator having a ferroelectric thin film perovskite single crystal resonator 失效
标题翻译：具有铁电薄膜钙钛矿单晶谐振器的电压控制振荡器
公开(公告)号：US06809604B2
公开(公告)日：2004-10-26
申请号：US10397876
申请日：2003-03-27
申请人： Takashi Kawakubo , Ryoichi Ohara , Kazuhide Abe , Hiroshi Tsurumi , Hiroshi Yoshida , Ryuichi Fujimoto
发明人： Takashi Kawakubo , Ryoichi Ohara , Kazuhide Abe , Hiroshi Tsurumi , Hiroshi Yoshida , Ryuichi Fujimoto
IPC分类号： H03B532
CPC分类号： H03H9/173 , H03H9/0095 , H03H9/545 , H03H9/562 , H03H9/564 , H03H9/566 , H03H9/581 , H03H9/585 , H03H9/60 , H03H2009/02196
摘要： To provide a miniaturized voltage controlled oscillator which can oscillate simultaneously a plurality of frequencies and has high stability of frequency, an excellent low phase noise, small variation per hour, and a wide frequency variable range. A thin film bulk acoustic wave resonator using single crystal ferroelectric material equal to or smaller than 10 &mgr;m in thickness whose direction of polarization is aligned to the direction of thickness is utilized as the piezoelectric member. The voltage controlled oscillator having large changing rate of the oscillation frequency of 0.01%/V or more and an extremely small phase noise is provided by changing the voltage applied to the electrodes.
摘要翻译：为了提供能够同时振荡多个频率并且具有高的频率稳定性，优异的低相位噪声，小时变化小和宽频率可变范围的微型压控振荡器.1。一种使用单晶的薄膜体声波谐振器作为压电部件，利用等于或小于10μm厚的偏振方向与厚度方向对准的铁电材料。通过改变施加到电极上的电压，提供振荡频率变化率大于0.01％/ V以上且极小相位噪声的压控振荡器。

30. 发明授权

US5889696A Thin-film capacitor device and RAM device using ferroelectric film 失效
标题翻译：薄膜电容器和使用铁电薄膜的RAM器件
公开(公告)号：US5889696A
公开(公告)日：1999-03-30
申请号：US45958
申请日：1998-03-23
申请人： Takashi Kawakubo , Noburu Fukushima , Kazuhide Abe
发明人： Takashi Kawakubo , Noburu Fukushima , Kazuhide Abe
IPC分类号： H01L27/10 , G11C11/22 , H01L21/8242 , H01L21/8246 , H01L27/105 , H01L27/108
CPC分类号： G11C11/22
摘要： A semiconductor memory device is constituted by arranging a plurality of memory cells in a matrix format, each of which includes a thin-film capacitor having a ferroelectric film and a pair of electrodes facing each other via the ferroelectric film, and a transfer gate transistor connected to the thin film capacitor. A voltage corresponding to the width of a hysteresis curve obtained when the thin-film capacitor is saturated and polarized falls within the range of 5% or higher to 20% or lower of the voltage difference between the positive and negative directions in a writing operation. A remanent polarization amount obtained when the thin-film capacitor is saturated and polarized falls within the range of 5% or higher to 30% or lower of the total polarization amount obtained upon application of a voltage in the writing operation.
摘要翻译：半导体存储器件通过以矩阵形式布置多个存储单元而构成，每个存储单元包括具有铁电膜的薄膜电容器和经由铁电体膜相互面对的一对电极，并且连接有传输栅极晶体管到薄膜电容器。当薄膜电容器饱和和极化时获得的滞后曲线的宽度对应的电压落在写入操作中正负方向之间的电压差的5％以上至20％以下的范围内。当薄膜电容器饱和和极化时获得的剩余极化量落在在写入操作中施加电压时获得的总极化量的5％以上至30％以下的范围内。

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