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21. 发明专利

JPH01242495A METHOD FOR GROWING BETA-BAB2O4 SINGLE CRYSTAL 失效
公开(公告)号：JPH01242495A
公开(公告)日：1989-09-27
申请号：JP6818188
申请日：1988-03-24
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , NOMURA SHIYUNJI , TERAJIMA KAZUTAKA , SHIMANUKI SENJI
IPC分类号： C30B15/00 , C30B29/22
摘要： PURPOSE:To obtain a beta-BaB2O4 single crystal of nonlinear optical crystal free from alpha substances and having superior quality by growing a BaB2O4 single crystal without using fluxes and then subjecting the above to slow cooling while the above crystal stays at a temp. in the vicinity of the phase transition temp. CONSTITUTION:Crystals are pulled up by using a liquid having a composition consisting of 55.0-78.0wt.% BaO and the balance B2O3 without using fluxes, such as Na2O and NaBO2, and then cooled slowly through the temp. range in the vicinity of the phase transition temp., e.g., from 950 down to 900 deg.C at >=10 deg.C/H cooling rate, by which beta-BaB2O4 single crystals are obtained. Further, when the above crystals are passed through the range of 950-900 deg.C at a cooling rate exceeding 10 deg.C/H, polycrystals consisting of alpha-BaB2O4 and beta-BaB2O4 are formed.

22. 发明专利

JPH01181483A MAGNETISM DETECTOR 失效
公开(公告)号：JPH01181483A
公开(公告)日：1989-07-19
申请号：JP255888
申请日：1988-01-11
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , INOUE KAZUHIKO
IPC分类号： H01L43/06
摘要： PURPOSE:To improve sensibility by forming an active layer sensitive to magnetism onto a semiconductor substrate and specifying the ratio of a distance of the area where current flow in the active layer to a distance of the area where magnetoelectromotive force perpendicular to the former distance is generated. CONSTITUTION:An active layer 6 sensitive to magnetism is shaped on a semiconductor substrate 1, and the ratio W/l of a distance l of the area where current flow in the active layer 6 to a distance W of the area where magnetoelectromotive force perpendicular to the distance l is generated is set three or more. The relationship between the W/l and relative sensitivity is shown in the graph, but the sensibility is not increased so much when the W/l is above 3 though it has an inclination in which it augments together with the W/l as a whole. When the relative sensitivity is increased, there is an optimum ratio because the rate of increase is reduced. When the W/l is increased, the output impedance increases depending upon the W/l. Accordingly, a magnetism detector having high sensitivity is acquired.

23. 发明专利

JPS6487598A TREATMENT OF RAW MATERIAL FOR COMPOUND SEMICONDUCTOR POLYCRYSTAL 失效
公开(公告)号：JPS6487598A
公开(公告)日：1989-03-31
申请号：JP24405287
申请日：1987-09-30
申请人： TOSHIBA CORP
发明人： KATSUMATA TORU , FUKUDA KATSUYOSHI
IPC分类号： C01B25/08 , C30B27/02 , C30B29/40 , H01L21/208
摘要： PURPOSE:To obtain a single crystal which obviates the generation of defects at a high yield by chemically etching a polycrystal raw material, then subjecting the polycrystal to a heating treatment in hydrogen or hydrogen-contg. inert gas and packing the treated crystal in a crucible at the time of producing the compd. semiconductor single crystal by an LEC method. CONSTITUTION:The following method is adopted at the time of producing the compd. semiconductor single crystal by a liquid sealing Czochralski method using the polycrystal raw material: The polycrystal raw material to be used is chemically etched and is then heated for the prescribed time in the hydrogen or the inert gaseous atmosphere contg. hydrogen by which the surface is completely reduced; thereafter, the crystal is packed in the crucible. The formation of the oxide film on the surface of the raw material melt at the time of crystal growth which is heretofore the cause for the generation of defects is prevented by adopting the above-mentioned method.

24. 发明专利

JPS6472986A APPARATUS FOR PRODUCING SEMICONDUCTOR SINGLE CRYSTAL 失效
公开(公告)号：JPS6472986A
公开(公告)日：1989-03-17
申请号：JP22861387
申请日：1987-09-14
申请人： TOSHIBA CORP
发明人： FUJITA HIROMOTO , NISHIO JOSHI , TERAJIMA KAZUTAKA , FUKUDA KATSUYOSHI
IPC分类号： C30B35/00 , C30B15/10 , H01L21/208
摘要： PURPOSE:To decrease the load to be applied to a crucible and to obtain a large-sized semiconductor single crystal by providing a supporting base of the crucible integrated with the bottom and side parts of the crucible. CONSTITUTION:The crucible 11 is put into the supporting base 12 which is made of carbon and supports the crucible 11. After a raw material for producing the single crystal is put into the crucible 11, the inside of a high-pressure vessel 14 is pressurized by gaseous Ar and the crucible 11 is heated by a heater 15 which coaxially encloses the crucible to melt the above-mentioned raw material and to directly synthesize the material, by which the raw material melt 16 is obtd. The seed crystal 17 is then lowered and after the crystal is melted and held in the melt 16, the seed crystal 17 is pulled up while the crystal is kept rotated, by which the single crystal is obtd. The supporting base 12 which houses the crucible 11 is taken in this state out of the high-pressure vessel 14 after the end of the production of the single crystal.

25. 发明专利

JPS6445798A PRODUCTION OF SINGLE CRYSTAL BY LIQUID-ENCAPSULATED PULLING UP METHOD 失效
公开(公告)号：JPS6445798A
公开(公告)日：1989-02-20
申请号：JP20130487
申请日：1987-08-12
申请人： TOSHIBA CORP
发明人： NISHIO JOSHI , KATSUMATA TORU , FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA
IPC分类号： H01L21/18 , C30B27/02
摘要： PURPOSE:To optimize a position in the direction of a pulling up shaft for a crucible and thereby obtain a long compound single crystal, by measuring temperature gradient in the radial direction of the crucible at each position in the direction of the pulling up shaft for the crucible. CONSTITUTION:A jig 22, having thermocouples (23a)-(23c) fixed and held in the radial direction of a crucible 12 and connecting to a pulling up shaft 21 is placed. The interior of a high-pressure vessel 11 is heated with a heater 13 while being evacuated to keep the temperature at the bottom of the crucible 12 at a given high value. The shaft 21 is then raised and lowered so as to place the tips of the thermocouples 23 at the positions of the liquid level when a raw material melt 16 is introduced into the crucible 12. Temperature distribution in this state is recorded on a recorder 24. On the other hand, temperature distribution in the radial direction of the crucible is determined from temperature difference of the central thermocouple (34b) from the surrounding thermocouples (34a) and (34c). A melt 16 and a liquid encapsulating layer 17 are subsequently contained in the crucible 12 in this state and the vertical set position of the crucible 12 is determined so as to provide the surface 16 of the melt 16 at the position in the direction of the shaft 21. A single crystal is then pulled up and down in this state and the crucible 12 is simultaneously raised so as to place the surface of the melt 16 at a position in the direction of the shaft 21 according to the lowering of the melt 16 accompanied by the pulling up of the single crystal.

26. 发明专利

JPS63310799A PRODUCTION OF OXIDE SUPERCONDUCTING CRYSTAL 失效
公开(公告)号：JPS63310799A
公开(公告)日：1988-12-19
申请号：JP14572287
申请日：1987-06-11
申请人： TOSHIBA CORP
发明人： TERAJIMA KAZUTAKA , FUKUDA KATSUYOSHI , NAKADA YUJI
IPC分类号： C30B17/00 , C30B19/02 , C30B29/22 , H01B12/04 , H01B13/00 , H01L39/12 , H01L39/24
摘要： PURPOSE:To obtain a multicomponent oxide superconductor in the form of a bulk crystal of high quality by using kyropouls method. CONSTITUTION:A Pt heater 2 is arranged to the inside of an alumina shielding material 1 and a Pt crucible 3 is supported on a base 4 at the center of the Pt heater. The base 4 is integrated with a supporting rod 5 connected to the outside of a furnace and is revolvable. A thermocouple 6 is provided to the base and a flux comprising a liquid mixture consisting of, for example, BaCO3 and B2O3 is formed in the crucible 3. A soln. 7 contg. Y2O3 and CuO dissolved therein is formed. After allowing the soln. to stand at about 1,200-1,300 deg.C for about 10hr, the temp. of the soln. is set at about 900-1,000 deg.C by cooling, then, a seed crystal of YCuO single crystal attached to a tip of a pulling shaft 8 is dipped in the soln. 7 and the seed crystal is allowed to be accustomed to the soln. Thereafter, a crystal 9 is pulled up with a specified low cooling velocity. In this stage, gaseous O2 is fed through a pipe 12 to the surface of the soln. 7. By this method, a YBa2Cu3O7-delta crystal having good quality is prepd. at relatively low temp., accordingly, without causing phase transition.

27. 发明专利

JPS63310521A MANUFACTURE OF OXIDE SUPERCONDUCTOR FIBER 失效
公开(公告)号：JPS63310521A
公开(公告)日：1988-12-19
申请号：JP14663587
申请日：1987-06-12
申请人： TOSHIBA CORP
发明人： KATSUMATA TORU , TERAJIMA KAZUTAKA , NAKADA YUJI , FUKUDA KATSUYOSHI , YOSHIDA HIROAKI , NISHIO JOSHI , FUJII TAKASHI
IPC分类号： B28B1/00 , H01B12/04 , H01B13/00
摘要： PURPOSE:To prevent a breaking in the manufacture of a fiber and to obtain a long fiber by using a material core wire in which some of metallic elements to compose a desired pluralitic oxide are short, and diffusing the necessary metallic element in the core material. CONSTITUTION:As the YBaO material 11, a composite of necessary component metal elements in which Cu is short is used. It is heated by a heater 13, a wire drawing process is executed to produce a material core wire 12 with the diameter of 1mm. To the core material 12, the metallic Cu is vacuum-evaporated or spattered, and the surface is covered with the Cu layer 15 of about 1mm thick. After that, the core material 12 is moved in an infrared ray concentration heating furnace 16 at the speed 1cm/min, extended up to the diameter 0.5mm, made into a desired YBaCuO type superconductor fiber 17, and wound on a drum 18. By making the core material 12 into a Cu-short YBaO, then covering it with the Cu layer which is strong against a breaking, and executing a wire drawing process, in such a way, no breaking is generated during the manufacture process, and an excellent pluralistic type oxide superconductor fiber can be produced.

28. 发明专利

JPS63159283A PRODUCTION OF COMPOUND SEMICONDUCTOR 失效
公开(公告)号：JPS63159283A
公开(公告)日：1988-07-02
申请号：JP30652986
申请日：1986-12-24
申请人： TOSHIBA CORP
发明人： FUKUDA KATSUYOSHI , KATSUMATA TORU , NISHIO JOSHI , TERAJIMA KAZUTAKA
IPC分类号： C30B11/04
摘要： PURPOSE:To obtain high-quality III-V single crystal having small change in impurity, by using an ampule in which a container having a raw material and seed crystal is separately contained from an element having high vapor pressure, melting the raw aqueous in a magnetic field and growing single crystal following the seed crystal. CONSTITUTION:When GaAs single crystal is prepared, GaAs polycrystal 24 and silicon are put in a quartz ampule 23 and seed crystal 5 is added to the end of the polycrystal. On the other hand, a quartz boat 26 and vapor-pressure controlling As27 are sealed in an ampule 23, set in a electric furnace and heated. Then after the GaAs raw aqueous is melted, exciting current is sent to an electromagnet and a magnetic field is impressed to the electric furnace. The temperature of the whole surface is gradually cooled and the single crystal following the seed crystal 25 is grown in the boat 26. Consequently, the GaAs crystal has

29. 发明专利

JPS6389498A PRODUCTION OF SILICON-ADDED GALLIUM ARSENIDE SINGLE CRYSTAL 失效
公开(公告)号：JPS6389498A
公开(公告)日：1988-04-20
申请号：JP22973186
申请日：1986-09-30
申请人： TOSHIBA CORP
发明人： FUJITA HIROMOTO , NISHIO JOSHI , FUKUDA KATSUYOSHI , TERAJIMA KAZUTAKA
IPC分类号： C30B27/02 , C30B29/42 , H01L21/18
摘要： PURPOSE:To produce the title single crystal with a reduced dislocation density by impressing a magnetic field on a raw material melt added with silicon arsenide in the direction almost vertical to the rotation axis of a crucible to uniformize the silicon concn. in an ingot. CONSTITUTION:Ga and As, silicon arsenide as an impurity additive, and B2O3 16 as a sealant are supplied into the crucible 12. The crucible 12 is set on the inside of a heater 13 arranged in a high-pressure vessel 11, the inside of the vessel 11 is evacuated, then an inert gas is introduced to pressurize the vessel, the heater 13 is energized to heat the crucible, and a raw material melt 15 and the liq. sealant 16 are formed. Subsequently, a magnetic field having >=3,000Oe is impressed on the raw material melt 15 by a magnetic field impressing device 14 in the direction almost vertical to the axis of the crucible 12, then a seed crystal 17 is lowered and brought into contact with the raw material melt 15, and the seed crystal is pulled up while being rotated.

30. 发明专利

JPS6261370A GAAS FIELD EFFECT SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6261370A
公开(公告)日：1987-03-18
申请号：JP20043285
申请日：1985-09-12
申请人： TOSHIBA CORP
发明人： YASUAMI SHIGERU , FUKUDA KATSUYOSHI , SAITO YASUYUKI , WATANABE MIYOKO
IPC分类号： H01L29/812 , H01L21/338 , H01L29/80
摘要： PURPOSE:To obtain a high mobility FET by ion implanting semi-insulating GaAs by containing an active layer in a high density Al ion implanted layer or disposing it adjacently thereto by implantation. CONSTITUTION:With an SiO2 film 12' having a hole as a mask aluminum ions are implanted to a semi-insulating GaAs substrate 11, Si ions are implanted as doner to form a high density A layer and an Si implanted layer, annealed in AsH3 atmosphere to remove crystal defects, and the Si is simultaneously activated. A WN film 15 is formed by RF sputtering in a N2 atmosphere, with a resist 16 as a mask a hole is opened, and a gate 17 is formed by RIE. A resist film 18 is formed except the gate 17 and an active layer 14, Si ions are implanted, activated to form a N type source 19 and drain 20, and electrodes 21, 22 are formed.

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