基本信息:
- 专利标题: METHOD FOR GROWING BETA-BAB2O4 SINGLE CRYSTAL
- 申请号:JP6818188 申请日:1988-03-24
- 公开(公告)号:JPH01242495A 公开(公告)日:1989-09-27
- 发明人: FUKUDA KATSUYOSHI , NOMURA SHIYUNJI , TERAJIMA KAZUTAKA , SHIMANUKI SENJI
- 申请人: TOSHIBA CORP
- 专利权人: TOSHIBA CORP
- 当前专利权人: TOSHIBA CORP
- 优先权: JP6818188 1988-03-24
- 主分类号: C30B15/00
- IPC分类号: C30B15/00 ; C30B29/22
摘要:
PURPOSE:To obtain a beta-BaB2O4 single crystal of nonlinear optical crystal free from alpha substances and having superior quality by growing a BaB2O4 single crystal without using fluxes and then subjecting the above to slow cooling while the above crystal stays at a temp. in the vicinity of the phase transition temp. CONSTITUTION:Crystals are pulled up by using a liquid having a composition consisting of 55.0-78.0wt.% BaO and the balance B2O3 without using fluxes, such as Na2O and NaBO2, and then cooled slowly through the temp. range in the vicinity of the phase transition temp., e.g., from 950 down to 900 deg.C at >=10 deg.C/H cooling rate, by which beta-BaB2O4 single crystals are obtained. Further, when the above crystals are passed through the range of 950-900 deg.C at a cooling rate exceeding 10 deg.C/H, polycrystals consisting of alpha-BaB2O4 and beta-BaB2O4 are formed.
公开/授权文献:
- JPH01170917U 公开/授权日:1989-12-04