专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20070075360A1 Cobalt silicon contact barrier metal process for high density semiconductor power devices 审中-公开
标题翻译：用于高密度半导体功率器件的钴硅接触屏障金属工艺
公开(公告)号：US20070075360A1
公开(公告)日：2007-04-05
申请号：US11240255
申请日：2005-09-30
申请人： Hong Chang , Tiesheng Li , Sung-Shan Tai , Daniel Ng , Anup Bhalla
发明人： Hong Chang , Tiesheng Li , Sung-Shan Tai , Daniel Ng , Anup Bhalla
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L21/28518 , H01L21/76843 , H01L21/76855 , H01L29/456 , H01L29/4933 , H01L29/4941 , H01L29/66734 , H01L29/7811
摘要： This invention discloses an improved trenched metal oxide semiconductor field effect transistor (MOSFET) cell that includes a trenched gate surrounded by a source region encompassed in a body region above a drain region disposed on a bottom surface of a substrate. The MOSFET cell further includes a source contact opening opened on top of an area extended over the body region and the source region through a protective insulation layer wherein the area further has a cobalt-silicide layer disposed near a top surface of the substrate. The MOSFET cell further includes a Ti/TiN conductive layer covering the area interfacing with the cobalt-silicide layer over the source contact opening. The MOSFET cell further includes a source contact metal layer formed on top of the Ti/TiN conductive layer ready to form source-bonding wires thereon.
摘要翻译：本发明公开了一种改进的沟槽金属氧化物半导体场效应晶体管（MOSFET）单元，其包括被包围在设置在基板的底表面上的漏极区域上方的体区域中的源极区域包围的沟槽栅极。 MOSFET单元进一步包括源极接触开口，该开口位于通过保护绝缘层延伸到主体区域上的区域的顶部，并且源区域通过保护绝缘层开放，其中该区域还具有设置在基板顶表面附近的硅化钴层。 MOSFET单元还包括覆盖源极接触开口上与硅化钴层接合的区域的Ti / TiN导电层。 MOSFET单元还包括形成在Ti / TiN导电层的顶部上的源极接触金属层，准备在其上形成源极接合线。

22. 发明授权

US08847306B2 Direct contact in trench with three-mask shield gate process 有权
标题翻译：直接接触沟槽与三屏蔽屏蔽门工艺
公开(公告)号：US08847306B2
公开(公告)日：2014-09-30
申请号：US13343666
申请日：2012-01-04
申请人： Sung-Shan Tai , Hamza Yilmaz , Anup Bhalla , Hong Chang , John Chen
发明人： Sung-Shan Tai , Hamza Yilmaz , Anup Bhalla , Hong Chang , John Chen
IPC分类号： H01L29/66 , H01L21/336 , H01L29/423 , H01L29/78 , H01L29/40 , H01L29/45 , H01L29/49 , H01L29/08 , H01L21/265
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0869 , H01L29/407 , H01L29/4236 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： A semiconductor substrate may be etched to form trenches with three different widths. A first conductive material is formed at the bottom of the trenches. A second conductive material separated by an insulator is formed over the first conductive material. A first insulator layer is formed on the trenches. A body layer is formed in the substrate. A source is formed in the body layer. A second insulator layer is formed on the trenches and source. Source and gate contacts are formed through the second insulator layer. Source and gate metal are formed on the second insulator layer. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：可以蚀刻半导体衬底以形成具有三个不同宽度的沟槽。第一导电材料形成在沟槽的底部。在第一导电材料上方形成由绝缘体隔开的第二导电材料。在沟槽上形成第一绝缘体层。在衬底中形成体层。源体形成在体层中。在沟槽和源极上形成第二绝缘体层。源极和栅极触点通过第二绝缘体层形成。源极和栅极金属形成在第二绝缘体层上。提供该摘要以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

23. 发明申请

US20060071268A1 Shallow source MOSFET 有权
标题翻译：浅源MOSFET
公开(公告)号：US20060071268A1
公开(公告)日：2006-04-06
申请号：US10952231
申请日：2004-09-27
申请人： Sung-Shan Tai , Tiesheng Li , Anup Bhalla , Hong Chang , Moses Ho
发明人： Sung-Shan Tai , Tiesheng Li , Anup Bhalla , Hong Chang , Moses Ho
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L29/456 , H01L29/4933 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： A semiconductor device comprises a drain, a body in contact with the drain, the body having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a trench extending through the source and the body to the drain, and a gate disposed in the trench, having a gate top surface that extends substantially above the body top surface. A method of fabricating a semiconductor device comprises forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate, through the hard mask, depositing gate material in the trench, where the amount of gate material deposited in the trench extends beyond the top substrate surface, and removing the hard mask to leave a gate structure that extends substantially above the top substrate surface.
摘要翻译：半导体器件包括漏极，与漏极接触的主体，主体具有主体顶表面，嵌入在主体中的源，从主体顶表面向下延伸到主体中，延伸穿过源和主体的沟槽并且设置在沟槽中的门具有大致在主体顶表面上方延伸的门顶表面。一种制造半导体器件的方法包括在具有顶部衬底表面的衬底上形成硬掩模，在衬底中形成通过硬掩模的沟槽，在沟槽中沉积栅极材料，其中沉积在沟槽中的栅极材料的量延伸超过顶部衬底表面，并且去除硬掩模以留下基本上在顶部衬底表面上方延伸的栅极结构。

24. 发明授权

US08252647B2 Fabrication of trench DMOS device having thick bottom shielding oxide 有权
标题翻译：具有厚底层屏蔽氧化物的沟槽DMOS器件的制造
公开(公告)号：US08252647B2
公开(公告)日：2012-08-28
申请号：US12551417
申请日：2009-08-31
申请人： Yeeheng Lee , Sung-Shan Tai , Hong Chang , John Chen
发明人： Yeeheng Lee , Sung-Shan Tai , Hong Chang , John Chen
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/513 , H01L29/66719 , H01L29/66734
摘要： Semiconductor device fabrication method and devices are disclosed. A device may be fabricated by forming in a semiconductor layer; filling the trench with an insulating material; removing selected portions of the insulating material leaving a portion of the insulating material in a bottom portion of the trench; forming one or more spacers on one or more sidewalls of a remaining portion of the trench; anisotropically etching the insulating material in the bottom portion of the trench using the spacers as a mask to form a trench in the insulator; removing the spacers; and filling the trench in the insulator with a conductive material. Alternatively, an oxide-nitride-oxide (ONO) structure may be formed on a sidewall and at a bottom of the trench and one or more conductive structures may be formed in a portion of the trench not occupied by the ONO structure.
摘要翻译：公开了半导体器件制造方法和器件。可以通过在半导体层中形成来制造器件; 用绝缘材料填充沟槽; 去除所述绝缘材料的选定部分，使所述绝缘材料的一部分留在所述沟槽的底部; 在所述沟槽的剩余部分的一个或多个侧壁上形成一个或多个间隔物; 使用间隔物作为掩模对沟槽的底部中的绝缘材料进行各向异性蚀刻，以在绝缘体中形成沟槽; 去除垫片; 并用导电材料填充绝缘体中的沟槽。或者，可以在沟槽的侧壁和底部形成氧化物 - 氧化物（ONO）结构，并且可以在未被ONO结构占据的沟槽的一部分中形成一个或多个导电结构。

25. 发明申请

US20120098059A1 DIRECT CONTACT IN TRENCH WITH THREE-MASK SHIELD GATE PROCESS 有权
标题翻译：直接与三层屏蔽门过程接触
公开(公告)号：US20120098059A1
公开(公告)日：2012-04-26
申请号：US13343666
申请日：2012-01-04
申请人： Sung-Shan Tai , Hamza Yilmaz , Anup Bhalla , Hong Chang , John Chen
发明人： Sung-Shan Tai , Hamza Yilmaz , Anup Bhalla , Hong Chang , John Chen
IPC分类号： H01L21/28 , H01L29/78
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0869 , H01L29/407 , H01L29/4236 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： A semiconductor substrate may be etched to form trenches with three different widths. A first conductive material is formed at the bottom of the trenches. A second conductive material separated by an insulator is formed over the first conductive material. A first insulator layer is formed on the trenches. A body layer is formed in the substrate. A source is formed in the body layer. A second insulator layer is formed on the trenches and source. Source and gate contacts are formed through the second insulator layer. Source and gate metal are formed on the second insulator layer. This abstract is provided to comply with rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.
摘要翻译：可以蚀刻半导体衬底以形成具有三个不同宽度的沟槽。第一导电材料形成在沟槽的底部。在第一导电材料上方形成由绝缘体隔开的第二导电材料。在沟槽上形成第一绝缘体层。在衬底中形成体层。源体形成在体层中。在沟槽和源极上形成第二绝缘体层。源极和栅极触点通过第二绝缘体层形成。在第二绝缘体层上形成源极和栅极金属。提供该摘要以符合要求抽象的规则，允许搜索者或其他读者快速确定技术公开内容的主题。提交它的理解是，它不会用于解释或限制权利要求的范围或含义。

26. 发明申请

US20110049618A1 FABRICATION OF TRENCH DMOS DEVICE HAVING THICK BOTTOM SHIELDING OXIDE 有权
标题翻译：具有厚度底层氧化物的TRENCH DMOS器件的制造
公开(公告)号：US20110049618A1
公开(公告)日：2011-03-03
申请号：US12551417
申请日：2009-08-31
申请人： Yeeheng Lee , Sung-Shan Tai , Hong Chang , John Chen
发明人： Yeeheng Lee , Sung-Shan Tai , Hong Chang , John Chen
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/42376 , H01L29/513 , H01L29/66719 , H01L29/66734
摘要： Semiconductor device fabrication method and devices are disclosed. A device may be fabricated by forming in a semiconductor layer; filling the trench with an insulating material; removing selected portions of the insulating material leaving a portion of the insulating material in a bottom portion of the trench; forming one or more spacers on one or more sidewalls of a remaining portion of the trench; anisotropically etching the insulating material in the bottom portion of the trench using the spacers as a mask to form a trench in the insulator; removing the spacers; and filling the trench in the insulator with a conductive material. Alternatively, an oxide-nitride-oxide (ONO) structure may be formed on a sidewall and at a bottom of the trench and one or more conductive structures may be formed in a portion of the trench not occupied by the ONO structure.
摘要翻译：公开了半导体器件制造方法和器件。可以通过在半导体层中形成来制造器件; 用绝缘材料填充沟槽; 去除所述绝缘材料的选定部分，使所述绝缘材料的一部分留在所述沟槽的底部; 在所述沟槽的剩余部分的一个或多个侧壁上形成一个或多个间隔物; 使用间隔物作为掩模对沟槽的底部中的绝缘材料进行各向异性蚀刻，以在绝缘体中形成沟槽; 去除垫片; 并用导电材料填充绝缘体中的沟槽。或者，可以在沟槽的侧壁和底部形成氧化物 - 氧化物（ONO）结构，并且可以在未被ONO结构占据的沟槽的一部分中形成一个或多个导电结构。

27. 发明授权

US07875541B2 Shallow source MOSFET 有权
标题翻译：浅源MOSFET
公开(公告)号：US07875541B2
公开(公告)日：2011-01-25
申请号：US12655162
申请日：2009-12-22
申请人： Sung-Shan Tai , Tiesheng Li , Anup Bhalla , Hong Chang , Moses Ho
发明人： Sung-Shan Tai , Tiesheng Li , Anup Bhalla , Hong Chang , Moses Ho
IPC分类号： H01L21/3205
CPC分类号： H01L29/7813 , H01L29/456 , H01L29/4933 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： Fabricating a semiconductor device includes forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate through the hard mask, depositing gate material in the trench, where the amount of gate material deposited in the trench extends beyond the top substrate surface, and removing the hard mask to leave a gate having a gate top surface that extends substantially above the top substrate surface at least in center region of the trench opening, the gate having a vertical edge that includes an extended portion, the extended portion extending above the trench opening and being substantially aligned with the trench wall. It further includes implanting a body, implanting a plurality of source regions embedded in the body, forming a plurality of spacers that insulate the source regions from the gate, the plurality of spacers being situated immediately adjacent to the gate and immediately adjacent to respective ones of the plurality of source regions, wherein the plurality of spacers do not substantially extend into the trench and do not substantially extend over the trench, disposing a dielectric layer over the source, the spacers, the gate, and at least a portion of the body, forming a contact opening, and disposing metal to form a contact with the body at the contact opening.
摘要翻译：制造半导体器件包括在具有顶部衬底表面的衬底上形成硬掩模，在衬底中通过硬掩模形成沟槽，在沟槽中沉积栅极材料，其中沉积在沟槽中的栅极材料的量延伸超过顶部并且去除硬掩模以离开具有栅极顶表面的栅极，该栅极顶表面至少在沟槽开口的中心区域基本上在顶部衬底表面上方延伸，栅极具有包括延伸部分的垂直边缘，延伸部分延伸到沟槽开口之上并与沟槽壁基本对齐。它还包括植入物体，植入嵌入在体内的多个源区，形成多个间隔物，使得源极区域与栅极绝缘，多个间隔物紧邻栅极并且紧邻栅极所述多个源极区域，其中所述多个间隔物基本上不延伸到所述沟槽中并且基本上不延伸穿过所述沟槽，在所述源极，所述间隔物，所述栅极以及所述主体的至少一部分之上设置介电层，形成接触开口，并且在接触开口处设置金属以与身体形成接触。

28. 发明授权

US08187939B2 Direct contact in trench with three-mask shield gate process 有权
标题翻译：直接接触沟槽与三屏蔽屏蔽门工艺
公开(公告)号：US08187939B2
公开(公告)日：2012-05-29
申请号：US12565611
申请日：2009-09-23
申请人： Sung-Shan Tai , Hamza Yilmaz , Anup Bhalla , Hong Chang , John Chen
发明人： Sung-Shan Tai , Hamza Yilmaz , Anup Bhalla , Hong Chang , John Chen
IPC分类号： H01L21/336 , H01L29/66
CPC分类号： H01L29/7813 , H01L21/26586 , H01L29/0869 , H01L29/407 , H01L29/4236 , H01L29/4238 , H01L29/456 , H01L29/4933 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： A semiconductor device and a method for making a semiconductor device are disclosed. A trench mask may be applied to a semiconductor substrate, which is etched to form trenches with three different widths. A first conductive material is formed at the bottom of the trenches. A second conductive material is formed over the first conductive material. An insulator layer separates the first and second conductive materials. A first insulator layer is deposited on top of the trenches. A body layer is formed in a top portion of the substrate. A source is formed in the body layer. A second insulator layer is applied on top of the trenches and the source. A contact mask is applied on top of the second insulator layer. Source and gate contacts are formed through the second insulator layer. Source and gate metal are formed on top of the second insulator layer.
摘要翻译：公开了半导体器件和制造半导体器件的方法。可以将沟槽掩模施加到半导体衬底，其被蚀刻以形成具有三个不同宽度的沟槽。第一导电材料形成在沟槽的底部。在第一导电材料上形成第二导电材料。绝缘体层分离第一和第二导电材料。第一绝缘体层沉积在沟槽的顶部。主体层形成在基板的顶部。源体形成在体层中。第二绝缘体层被施加在沟槽和源的顶部上。接触掩模施加在第二绝缘体层的顶部。源极和栅极触点通过第二绝缘体层形成。源极和栅极金属形成在第二绝缘体层的顶部上。

29. 发明申请

US20100105182A1 Shallow source MOSFET 有权
标题翻译：浅源MOSFET
公开(公告)号：US20100105182A1
公开(公告)日：2010-04-29
申请号：US12655162
申请日：2009-12-22
申请人： Sung-Shan Tai , Tiesheng Li , Anup Bhalla , Hong Chang , Moses Ho
发明人： Sung-Shan Tai , Tiesheng Li , Anup Bhalla , Hong Chang , Moses Ho
IPC分类号： H01L21/336
CPC分类号： H01L29/7813 , H01L29/456 , H01L29/4933 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： Fabricating a semiconductor device includes forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate through the hard mask, depositing gate material in the trench, where the amount of gate material deposited in the trench extends beyond the top substrate surface, and removing the hard mask to leave a gate having a gate top surface that extends substantially above the top substrate surface at least in center region of the trench opening, the gate having a vertical edge that includes an extended portion, the extended portion extending above the trench opening and being substantially aligned with the trench wall. It further includes implanting a body, implanting a plurality of source regions embedded in the body, forming a plurality of spacers that insulate the source regions from the gate, the plurality of spacers being situated immediately adjacent to the gate and immediately adjacent to respective ones of the plurality of source regions, wherein the plurality of spacers do not substantially extend into the trench and do not substantially extend over the trench, disposing a dielectric layer over the source, the spacers, the gate, and at least a portion of the body, forming a contact opening, and disposing metal to form a contact with the body at the contact opening.
摘要翻译：制造半导体器件包括在具有顶部衬底表面的衬底上形成硬掩模，在衬底中通过硬掩模形成沟槽，在沟槽中沉积栅极材料，其中沉积在沟槽中的栅极材料的量延伸超过顶部并且去除硬掩模以离开具有栅极顶表面的栅极，该栅极顶表面至少在沟槽开口的中心区域基本上在顶部衬底表面上方延伸，栅极具有包括延伸部分的垂直边缘，延伸部分延伸到沟槽开口之上并与沟槽壁基本对齐。它还包括植入物体，植入嵌入在体内的多个源区，形成多个间隔物，使得源极区域与栅极绝缘，多个间隔物紧邻栅极并且紧邻栅极所述多个源极区域，其中所述多个间隔物基本上不延伸到所述沟槽中并且基本上不延伸穿过所述沟槽，在所述源极，所述间隔物，所述栅极以及所述主体的至少一部分之间设置介电层，形成接触开口，并且在接触开口处设置金属以与身体形成接触。

30. 发明申请

US20170288034A1 DEVICE STRUCTURE AND MANUFACTURING METHOD USING HDP DEPOSITED SOURCE-BODY IMPLANT BLOCK 审中-公开
公开(公告)号：US20170288034A1
公开(公告)日：2017-10-05
申请号：US15499487
申请日：2017-04-27
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
IPC分类号： H01L29/423 , H01L29/06 , H01L29/40 , H01L27/088
CPC分类号： H01L29/42368 , H01L27/088 , H01L29/0619 , H01L29/401 , H01L29/4236
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式