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1. 发明申请

US20170288034A1 DEVICE STRUCTURE AND MANUFACTURING METHOD USING HDP DEPOSITED SOURCE-BODY IMPLANT BLOCK 审中-公开
公开(公告)号：US20170288034A1
公开(公告)日：2017-10-05
申请号：US15499487
申请日：2017-04-27
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
IPC分类号： H01L29/423 , H01L29/06 , H01L29/40 , H01L27/088
CPC分类号： H01L29/42368 , H01L27/088 , H01L29/0619 , H01L29/401 , H01L29/4236
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

2. 发明授权

US10896968B2 Device structure and manufacturing method using HDP deposited source-body implant block 有权
公开(公告)号：US10896968B2
公开(公告)日：2021-01-19
申请号：US15499487
申请日：2017-04-27
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
IPC分类号： H01L29/423 , H01L29/06 , H01L29/40
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.

3. 发明授权

US09024378B2 Device structure and manufacturing method using HDP deposited source-body implant block 有权
标题翻译：使用HDP沉积源体植入块的装置结构和制造方法
公开(公告)号：US09024378B2
公开(公告)日：2015-05-05
申请号：US13763644
申请日：2013-02-09
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
IPC分类号： H01L29/78 , H01L21/265 , H01L29/66
CPC分类号： H01L29/7827 , H01L21/265 , H01L21/2652 , H01L21/26586 , H01L21/266 , H01L29/0619 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要翻译：本发明公开了一种半导体功率器件。沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域从而可以减少用于制造半导体功率器件的掩模。

4. 发明申请

US20140225187A1 DEVICE STRUCTURE AND MANUFACTURING METHOD USING HDP DEPOSITED SOURCE-BODY IMPLANT BLOCK 审中-公开
标题翻译：使用HDP沉积源体植入块的装置结构和制造方法
公开(公告)号：US20140225187A1
公开(公告)日：2014-08-14
申请号：US13763644
申请日：2013-02-09
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
IPC分类号： H01L29/78 , H01L29/66 , H01L21/265
CPC分类号： H01L29/7827 , H01L21/265 , H01L21/2652 , H01L21/26586 , H01L21/266 , H01L29/0619 , H01L29/1095 , H01L29/407 , H01L29/4236 , H01L29/42368 , H01L29/66666 , H01L29/66734 , H01L29/7806 , H01L29/7811 , H01L29/7813
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要翻译：本发明公开了一种半导体功率器件。沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域从而可以减少用于制造半导体功率器件的掩模。

5. 发明授权

US08035159B2 Device structure and manufacturing method using HDP deposited source-body implant block 有权
标题翻译：使用HDP沉积源体植入块的装置结构和制造方法
公开(公告)号：US08035159B2
公开(公告)日：2011-10-11
申请号：US11796985
申请日：2007-04-30
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
IPC分类号： H01L29/66 , H01L21/336
CPC分类号： H01L29/7813 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7806 , H01L29/7811
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要翻译：本发明公开了一种半导体功率器件。沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域从而可以减少用于制造半导体功率器件的掩模。

6. 发明授权

US08372708B2 Device structure and manufacturing method using HDP deposited using deposited source-body implant block 有权
标题翻译：使用沉积源体植入块沉积的HDP的装置结构和制造方法
公开(公告)号：US08372708B2
公开(公告)日：2013-02-12
申请号：US13200869
申请日：2011-10-04
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K Lui
IPC分类号： H01L21/8238 , H01L21/425
CPC分类号： H01L29/7813 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7806 , H01L29/7811
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要翻译：本发明公开了一种半导体功率器件。沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域从而可以减少用于制造半导体功率器件的掩模。

7. 发明申请

US20120018793A1 Device structure and manufacturing method using HDP deposited using deposited source-body implant block 有权
标题翻译：使用沉积源体植入块沉积的HDP的装置结构和制造方法
公开(公告)号：US20120018793A1
公开(公告)日：2012-01-26
申请号：US13200869
申请日：2011-10-04
申请人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
发明人： Anup Bhalla , François Hébert , Sung-Shan Tai , Sik K. Lui
IPC分类号： H01L21/336 , H01L29/78 , H01L29/788
CPC分类号： H01L29/7813 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7806 , H01L29/7811
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要翻译：本发明公开了一种半导体功率器件。沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域从而可以减少用于制造半导体功率器件的掩模。

8. 发明申请

US20110042724A1 Trenched mosfets with part of the device formed on a (110) crystal plane 审中-公开
标题翻译：在110平面上形成有部分器件的沟槽式mosfet
公开(公告)号：US20110042724A1
公开(公告)日：2011-02-24
申请号：US11634031
申请日：2009-04-20
申请人： Anup Bhalla , Sik K. Lui , Sung-Shan Tai
发明人： Anup Bhalla , Sik K. Lui , Sung-Shan Tai
IPC分类号： H01L29/78 , H01L21/336
CPC分类号： H01L29/7813 , H01L24/33 , H01L29/045 , H01L29/4236 , H01L29/66734 , H01L29/7811 , H01L2924/1306 , H01L2924/13091 , H01L2924/14 , H01L2924/181 , H01L2924/00
摘要： This invention discloses an improved MOSFET devices manufactured with a trenched gate by forming the sidewalls of the trench on a (110) crystal orientation of a semiconductor substrate. The trench is covering with a dielectric oxide layer along the sidewalls and the bottom surface or the termination of the trench formed along different crystal orientations of the semiconductor substrate. Special manufacturing processes such as oxide annealing process, special mask or SOG processes are implemented to overcome the limitations of the non-uniform dielectric layer growth.
摘要翻译：本发明公开了通过在半导体衬底的（110）晶体取向上形成沟槽的侧壁而制造的具有沟槽栅极的改进的MOSFET器件。沟槽沿着沿着半导体衬底的不同晶体取向形成的沟槽的侧壁和底表面或沟槽的终端覆盖电介质氧化物层。实施诸如氧化物退火工艺，特殊掩模或SOG工艺的特殊制造工艺以克服非均匀介电层生长的限制。

9. 发明申请

US20080265289A1 Device structure and manufacturing method using HDP deposited source-body implant block 有权
标题翻译：使用HDP沉积源体植入块的装置结构和制造方法
公开(公告)号：US20080265289A1
公开(公告)日：2008-10-30
申请号：US11796985
申请日：2007-04-30
申请人： Anup Bhalla , Francios Hebert , Sung-Shan Tai , Sik K. Lui
发明人： Anup Bhalla , Francios Hebert , Sung-Shan Tai , Sik K. Lui
IPC分类号： H01L29/78 , H01L21/336 , H01L29/812 , H01L21/338
CPC分类号： H01L29/7813 , H01L29/1095 , H01L29/407 , H01L29/42368 , H01L29/66734 , H01L29/7806 , H01L29/7811
摘要： This invention discloses a semiconductor power device. The trenched semiconductor power device includes a trenched gate, opened from a top surface of a semiconductor substrate, surrounded by a source region encompassed in a body region near the top surface above a drain region disposed on a bottom surface of a substrate. The semiconductor power device further includes an implanting-ion block disposed above the top surface on a mesa area next to the body region having a thickness substantially larger than 0.3 micron for blocking body implanting ions and source ions from entering into the substrate under the mesa area whereby masks for manufacturing the semiconductor power device can be reduced.
摘要翻译：本发明公开了一种半导体功率器件。沟槽半导体功率器件包括从半导体衬底的顶表面开口的沟槽栅极，被包围在设置在衬底底表面上的漏区以上的顶表面附近的体区中的源极区围绕。所述半导体功率器件还包括植入离子块，所述植入离子块设置在所述身体区域旁边的台面区域的上表面上，所述植入离子块具有基本上大于0.3微米的厚度，用于阻挡体注入离子和源离子进入台面区域从而可以减少用于制造半导体功率器件的掩模。

10. 发明授权

US07667264B2 Shallow source MOSFET 有权
标题翻译：浅源MOSFET
公开(公告)号：US07667264B2
公开(公告)日：2010-02-23
申请号：US10952231
申请日：2004-09-27
申请人： Sung-Shan Tai , Tiesheng Li , Anup Bhalla , Hong Chang , Moses Ho
发明人： Sung-Shan Tai , Tiesheng Li , Anup Bhalla , Hong Chang , Moses Ho
IPC分类号： H01L29/94
CPC分类号： H01L29/7813 , H01L29/456 , H01L29/4933 , H01L29/66719 , H01L29/66727 , H01L29/66734 , H01L29/7811
摘要： A semiconductor device comprises a drain, a body in contact with the drain, the body having a body top surface, a source embedded in the body, extending downward from the body top surface into the body, a trench extending through the source and the body to the drain, and a gate disposed in the trench, having a gate top surface that extends substantially above the body top surface. A method of fabricating a semiconductor device comprises forming a hard mask on a substrate having a top substrate surface, forming a trench in the substrate, through the hard mask, depositing gate material in the trench, where the amount of gate material deposited in the trench extends beyond the top substrate surface, and removing the hard mask to leave a gate structure that extends substantially above the top substrate surface.
摘要翻译：半导体器件包括漏极，与漏极接触的主体，主体具有主体顶表面，嵌入在主体中的源，从主体顶表面向下延伸到主体中，延伸穿过源和主体的沟槽并且设置在沟槽中的门具有大致在主体顶表面上方延伸的门顶表面。一种制造半导体器件的方法包括在具有顶部衬底表面的衬底上形成硬掩模，在衬底中形成通过硬掩模的沟槽，在沟槽中沉积栅极材料，其中沉积在沟槽中的栅极材料的量延伸超过顶部衬底表面，并且去除硬掩模以留下基本上在顶部衬底表面上方延伸的栅极结构。

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