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21. 发明申请

US20130229808A1 Light Source Device with Outer Lens and Light Source System Using the Same 有权
标题翻译：具有外透镜和光源系统的光源装置
公开(公告)号：US20130229808A1
公开(公告)日：2013-09-05
申请号：US13604701
申请日：2012-09-06
申请人： Chun-Lin Wang , Yu-Shan Shen , Chung-Hsing Chang
发明人： Chun-Lin Wang , Yu-Shan Shen , Chung-Hsing Chang
IPC分类号： F21V5/04
CPC分类号： F21V5/04 , F21V17/005 , F21Y2115/10 , G02B19/0014 , G02B19/0061
摘要： A light source device and a light source system using the same are provided. The light source device includes a lens and a light source disposed under the lens. The lens has a light-emitting top surface and a bottom surface having a hole that is surrounded by an inner wall surface and an inner top surface. The inner top surface and a projection area of thereof onto the light-emitting top surface are flat surfaces. The light source has an illumination area, wherein an opening of the hole covers a projection area of the illumination area onto the bottom surface. The light source system includes a plurality of the light source device disposed in a honeycomb arrangement, wherein the light source devices are spaced apart from each other.
摘要翻译：提供了一种光源装置和使用该光源装置的光源系统。光源装置包括设置在透镜下方的透镜和光源。透镜具有发光顶表面和底表面，该底表面具有被内壁表面和内顶表面包围的孔。其内表面和其上的发光顶表面的投影区域是平坦的表面。光源具有照明区域，其中孔的开口将照明区域的投影区域覆盖到底面上。光源系统包括设置在蜂窝结构中的多个光源装置，其中光源装置彼此间隔开。

22. 发明申请

US20100146252A1 COMPUTER MOTHERBOARD WITH AUTOMATICALLY ADJUSTED HARDWARE PARAMETER VALUE 有权
标题翻译：具有自动调整硬件参数值的计算机主板
公开(公告)号：US20100146252A1
公开(公告)日：2010-06-10
申请号：US12397950
申请日：2009-03-04
申请人： Chung-Hsing Chang , Tung-Jung Tsai , Tu-Tsung Kao
发明人： Chung-Hsing Chang , Tung-Jung Tsai , Tu-Tsung Kao
IPC分类号： G06F9/00
CPC分类号： G06F11/3031 , G06F1/04 , G06F1/24 , G06F9/4403 , G06F11/3051
摘要： A computer motherboard with automatically adjusted hardware parameter values restarts automatically and proceeds with overclocking or power-saving operation in case the computer motherboard hangs due to preceding overclocking or power-saving operation. The computer motherboard includes: a watchdog unit connected to a frequency generator and adapted to notify the frequency generator and generate a restart signal after predetermined duration; the frequency generator for generating and outputting a frequency, and automatically decreasing or increasing, according to notice from the watchdog unit, a current frequency generated by the frequency generator so as to generate and output a new frequency to substitute for the current frequency; and a hardware parameter value setting unit for setting the frequency generator for a start frequency and an operation mode and starting the watchdog unit; wherein the computer motherboard receives the restart signal and automatically restarts at the new frequency when unbooted after predetermined duration.
摘要翻译：具有自动调整的硬件参数值的计算机主板将自动重新启动，并进行超频或省电操作，以防计算机主板由于超频或省电操作而挂起。计算机主板包括：看门狗单元，连接到频率发生器，并适于通知频率发生器并在预定的持续时间之后产生重启信号; 频率发生器，用于产生和输出频率，并且根据来自看门狗单元的通知自动地减小或增加由频率发生器产生的当前频率，以产生并输出新频率来代替当前频率; 以及硬件参数值设定单元，用于设定频率发生器的起始频率和运行模式，并启动看门狗单元; 其中所述计算机主板在预定的持续时间之后未被引导时接收到所述重启信号并且以新频率自动重启。

23. 发明授权

US07131102B2 Full sized scattering bar alt-PSM technique for IC manufacturing in sub-resolution era 有权
公开(公告)号：US07131102B2
公开(公告)日：2006-10-31
申请号：US10782670
申请日：2004-02-19
申请人： Chang-Ming Dai , Chung-Hsing Chang , Jan-Wen You , Burn J. Lin
发明人： Chang-Ming Dai , Chung-Hsing Chang , Jan-Wen You , Burn J. Lin
IPC分类号： G06F17/50
CPC分类号： G03F1/32 , G03F1/30 , G03F1/70 , G03F7/2026
摘要： A process is described for shrinking gate lengths and poly interconnects simultaneously during the fabrication of an integrated circuit. A positive tone photoresist is coated on a substrate and is first exposed with an alternating phase shift mask that has full size scattering bars which enable a gate dimension to be printed that is ¼ to ½ the size of the exposing wavelength. The substrate is then exposed using a tritone attenuated phase shift mask with a chrome blocking area to protect the shrunken gates and attenuated areas with scattering bars for shrinking the interconnect lines. Scattering bars are not printed in the photoresist pattern. The process affords higher DOF, lower OPE, and less sensitivity to lens aberrations than conventional lithography methods. A data processing flow is provided which leads to a modified GDS layout for each of the two masks. A system for producing phase shifting layout data is also included.

24. 发明授权

US07033947B2 Dual trench alternating phase shift mask fabrication 失效
标题翻译：双沟槽交变相移掩模制造
公开(公告)号：US07033947B2
公开(公告)日：2006-04-25
申请号：US10385764
申请日：2003-03-11
申请人： San-De Tzu , Ming-Shuo Yen , Chung-Hsing Chang
发明人： San-De Tzu , Ming-Shuo Yen , Chung-Hsing Chang
IPC分类号： H01L21/302
CPC分类号： G03F1/30
摘要： Fabricating a dual-trench alternating phase shift mask (PSM) is disclosed. A chromium layer over a mask layer, which is over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer is dry etched according to deep trenches of a PSM design. The quartz layer is dry etched a first number of times through a first photoresist layer applied over the chromium layer and patterned according to the deep trenches of the PSM design by using backside ultraviolet exposure. The mask layer is dry etched again, according to shallow trenches of the PSM design. The quartz layer is dry etched a second number of times through a second photoresist layer applied over the chromium layer and patterned according to the shallow trenches of the PSM design by using backside ultraviolet exposure.
摘要翻译：公开了制造双沟道交替相移掩模（PSM）。根据半导体设计对PSM之上的掩模层上的铬层在石英层上进行图案化。根据PSM设计的深沟槽对掩模层进行干蚀刻。通过施加在铬层上的第一光致抗蚀剂层将石英层干蚀刻第一次，并通过使用背面紫外线曝光根据PSM设计的深沟槽进行图案化。根据PSM设计的浅沟槽，再次对掩模层进行干蚀刻。通过施加在铬层上的第二光致抗蚀剂层将石英层干蚀刻第二次，并通过使用背面紫外线曝光根据PSM设计的浅沟槽进行图案化。

25. 发明申请

US20050147895A1 Holographic reticle and patterning method 有权
标题翻译：全息掩模版和图案化方法
公开(公告)号：US20050147895A1
公开(公告)日：2005-07-07
申请号：US10792084
申请日：2004-03-03
申请人： Shih-Ming Chang , Chung-Hsing Chang , Chih-Cheng Chin , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin
发明人： Shih-Ming Chang , Chung-Hsing Chang , Chih-Cheng Chin , Wen-Chuan Wang , Chi-Lun Lu , Sheng-Chi Chin , Chin-Hsiang Lin
IPC分类号： G03F1/14 , G03H1/00 , G03H1/08 , G03C5/00 , G03F9/00 , G03H1/04
CPC分类号： G03F7/70291 , G03F1/50 , G03H1/0005 , G03H1/0244 , G03H1/0808 , G03H1/2205 , G03H2001/0094 , G03H2001/0833 , G03H2210/30 , G03H2210/452 , G03H2224/04 , G03H2240/12 , G03H2240/13 , G03H2240/23 , G03H2270/52
摘要： A hologram reticle and method of patterning a target. A layout pattern for an image to be transferred to a target is converted into a holographic representation of the image. A hologram reticle is manufactured that includes the holographic representation. The hologram reticle is then used to pattern the target. Three-dimensional patterns may be formed in a photoresist layer of the target in a single patterning step. These three-dimensional patterns may be filled to form three-dimensional structures. The holographic representation of the image may also be transferred to a top photoresist layer of a top surface imaging (TSI) semiconductor device, either directly or using the hologram reticle. The top photoresist layer may then be used to pattern an underlying photoresist layer with the image. The lower photoresist layer is used to pattern a material layer of the device.
摘要翻译：全息图掩模版和图案化目标的方法。要传输到目标的图像的布局图案被转换成图像的全息图。制造包括全息图的全息标线。然后使用全息图标线来对目标进行图案化。可以在单个图案化步骤中在靶的光致抗蚀剂层中形成三维图案。可以填充这些三维图案以形成三维结构。图像的全息图也可以直接地或使用全息图掩模图传递到顶表面成像（TSI）半导体器件的顶部光致抗蚀剂层。然后可以使用顶部光致抗蚀剂层来用图像对下面的光致抗蚀剂层进行图案化。下部光致抗蚀剂层用于对该器件的材料层进行图案化。

26. 发明授权

US06861182B2 Tri-tone attenuated phase shift trim mask for double exposure alternating phase shift mask process 失效
标题翻译：用于双重曝光交替相移掩模工艺的三色衰减相移修整蒙版
公开(公告)号：US06861182B2
公开(公告)日：2005-03-01
申请号：US10272627
申请日：2002-10-17
申请人： Chung-Hsing Chang
发明人： Chung-Hsing Chang
IPC分类号： G03F1/00 , G03F1/30 , G03F1/32 , G03F7/20 , G03F9/00 , G03C5/00 , H01L29/40
CPC分类号： G03F1/32 , G03F1/30 , G03F1/70 , G03F7/70283 , G03F7/70466 , Y10T428/24802
摘要： Employing a tri-tone attenuated phase shift trim mask in the second exposure of a double exposure alternating phase shift mask (alt-PSM) process is disclosed. A semiconductor wafer is first exposed utilizing a dark field alt-PSM, and then secondly is exposed utilizing a tri-tone attenuated PSM. The tri-tone attenuated PSM may include a transparent substrate, such as quartz, an opaque layer, such as chrome, and an attenuated layer, such as 6% transparency molybdenum silicide (MoSi). The opaque layer has a pattern corresponding to polysilicon gates to be imprinted on the semiconductor wafer, to protect the polysilicon photoresist patterns. The attenuated layer includes assist features to protect forbidden pitch semi-isolated field polysilicon patterns and isolated field polysilicon patterns to be imprinted on the semiconductor wafer.
摘要翻译：公开了在双曝光交替相移掩模（alt-PSM）工艺的第二曝光中采用三色衰减相移修整掩模。首先使用暗场alt-PSM曝光半导体晶片，然后利用三音衰减PSM曝光半导体晶片。三色衰减PSM可以包括透明衬底，例如石英，不透明层，例如铬，以及衰减层，例如6％透明硅化钼（MoSi）。不透明层具有对应于要印刷在半导体晶片上的多晶硅栅极的图案，以保护多晶硅光致抗蚀剂图案。衰减层包括辅助特征，以保护要被印制在半导体晶片上的禁止间距半隔离场多晶硅图案和隔离场多晶硅图案。

27. 发明授权

US06830702B2 Single trench alternating phase shift mask fabrication 失效
标题翻译：单沟槽交变相移掩模制造
公开(公告)号：US06830702B2
公开(公告)日：2004-12-14
申请号：US10165028
申请日：2002-06-07
申请人： San-De Tzu , Chang-Ming Dai , Chung-Hsing Chang , Chen-Hao Hsieh
发明人： San-De Tzu , Chang-Ming Dai , Chung-Hsing Chang , Chen-Hao Hsieh
IPC分类号： B44C122
CPC分类号： C03C17/3605 , C03C17/36 , C03C2218/33 , C23F4/00 , G03F1/30
摘要： The invention relates to fabricating a single-trench alternating phase shift mask (PSM). A chromium layer over a mask layer, which is itself over a quartz layer, of the PSM is patterned according to a semiconductor design. The mask layer and the quartz layer are dry etched through a photoresist layer that has been applied over the chromium layer and patterned according to an alternating PSM design. The dry etching initially forms single trenches of the PSM. The quartz layer is next wet etched through the mask layer to completely form the single trenches of the PSM, where the photoresist layer has first been removed. The mask layer is dry etched again, where the single trenches of the PSM are initially filled with filler material to protect the single trenches from the dry etching.
摘要翻译：本发明涉及制造单沟槽交替相移掩模（PSM）。根据半导体设计对PSM上的掩模层上的铬层本身在石英层上进行图案化。掩模层和石英层通过已经施加在铬层上并且根据交替的PSM设计被图案化的光致抗蚀剂层被干蚀刻。干蚀刻最初形成PSM的单个沟槽。接着通过掩模层湿法蚀刻石英层，以完全形成PSM的单个沟槽，其中光致抗蚀剂层首先被去除。再次对掩模层进行干蚀刻，其中PSM的单个沟槽最初用填充材料填充，以保护单个沟槽免受干蚀刻。

28. 发明授权

US06765811B1 Method in the design for a power supply for suppressing noise and signal interference in equipment 失效
标题翻译：设计用于抑制设备中的噪声和信号干扰的电源的方法
公开(公告)号：US06765811B1
公开(公告)日：2004-07-20
申请号：US10463089
申请日：2003-06-17
申请人： Chung-Hsing Chang
发明人： Chung-Hsing Chang
IPC分类号： H02M112
CPC分类号： H02M1/126 , H02M1/44
摘要： A new method in the design for an electronic power supply for suppressing signal interference in equipment of an electronic system due to ground current in a ground loop is provided. In a power supply comprising a transformer, a primary circuit, a secondary circuit, and ground conductors, the method is done by connecting the common signal references of secondary side to the ground conductors through a capacitor and an inductor connected in series. The added capacitor is to reject DC and low frequency noise and interference, and the added inductor is to reject high frequency noise and interference. Most noise and interference signals therefore cannot pass through the formed paths. As a result, the degree of signal interference problem is greatly reduced.
摘要翻译：提供了一种用于抑制由于接地回路中的接地电流引起的电子系统设备中信号干扰的电子电源设计的新方法。在包括变压器，初级电路，次级电路和接地导体的电源中，通过将电容器和串联的电感器连接到次级侧的公共信号基准到接地导体来实现。增加的电容器是抑制直流和低频噪声和干扰，增加的电感是抑制高频噪声和干扰。因此，大多数噪声和干扰信号不能通过形成的路径。结果，信号干扰问题的程度大大降低。

29. 发明授权

US4910870A Levered tool with cooperating jaws 失效
标题翻译：带有合作夹爪的刀具
公开(公告)号：US4910870A
公开(公告)日：1990-03-27
申请号：US247435
申请日：1988-09-09
申请人： Chung-Hsing Chang
发明人： Chung-Hsing Chang
IPC分类号： B26B17/02
CPC分类号： B26B17/02
摘要： A levered tool includes two cooperating jaws, two cover plates pivotably mounting therebetween the jaws, two handles providing a levering function for the jaws, and two pivotally connected toggles each of which includes a first end pivotally connected to one of the jaws and a second end fixed to one of the handles, wherein the tool is further provided with an adjusting device connected between the toggles and capable of adjusting the distance between the first ends of the toggles.
摘要翻译：杠杆工具包括两个协作爪，两个可枢转地安装在夹爪之间的盖板，两个手柄提供用于夹爪的杠杆功能，以及两个枢转连接的肘节，每个肘节包括枢转地连接到一个钳口的第一端和第二端固定到一个把手，其中该工具还设置有一个调节装置，该调节装置连接在该切换之间并且能够调节该切换头的第一端之间的距离。

30. 发明授权

US08833979B2 Light source device with outer lens and light source system using the same 有权
标题翻译：具有外透镜和光源系统的光源装置使用
公开(公告)号：US08833979B2
公开(公告)日：2014-09-16
申请号：US13604701
申请日：2012-09-06
申请人： Chun-Lin Wang , Yu-Shan Shen , Chung-Hsing Chang
发明人： Chun-Lin Wang , Yu-Shan Shen , Chung-Hsing Chang
IPC分类号： F21V3/00 , F21V5/00
CPC分类号： F21V5/04 , F21V17/005 , F21Y2115/10 , G02B19/0014 , G02B19/0061
摘要： A light source device and a light source system using the same are provided. The light source device includes a lens and a light source disposed under the lens. The lens has a light-emitting top surface and a bottom surface having a hole that is surrounded by an inner wall surface and an inner top surface. The inner top surface and a projection area of thereof onto the light-emitting top surface are flat surfaces. The light source has an illumination area, wherein an opening of the hole covers a projection area of the illumination area onto the bottom surface. The light source system includes a plurality of the light source device disposed in a honeycomb arrangement, wherein the light source devices are spaced apart from each other.
摘要翻译：提供了一种光源装置和使用该光源装置的光源系统。光源装置包括设置在透镜下方的透镜和光源。透镜具有发光顶表面和底表面，该底表面具有被内壁表面和内顶表面包围的孔。其内表面和其上的发光顶表面的投影区域是平坦的表面。光源具有照明区域，其中孔的开口将照明区域的投影区域覆盖到底面上。光源系统包括设置在蜂窝结构中的多个光源装置，其中光源装置彼此间隔开。

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