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    • 23. 发明授权
    • Printed circuit board apparatus which facilitates fabrication of units
comprising a data processing system
    • 有助于制造包括数据处理系统的单元的印刷电路板装置
    • US4190901A
    • 1980-02-26
    • US856433
    • 1977-12-01
    • Robert B. JohnsonChester M. Nibby, Jr.
    • Robert B. JohnsonChester M. Nibby, Jr.
    • H05K3/00G11C5/00H05K1/00H05K1/11G11C5/02G11C5/06
    • H05K1/116H05K1/029H05K1/0295H05K1/0298H05K2201/09954H05K2201/10689
    • A printed circuit board assembly includes at least two layers which is able to accommodate a subsystem such as a memory subsystem designed to have one or more optional features. The two layers of the printed circuit board when etched include the required number of horizontal and vertical paths to be connected to all of the integrated circuit chips to be positioned and interconnected thereon. The required holes for such integrated circuit chips when drilled include first sets of holes for mounting groups of integrated circuit chips required for implementing a first group of features and which are to be interconnected to the other integrated circuit chips of the subsystem mounted on the different sections of the board. Second sets of holes are included on the board so as to have a predetermined relationship with the first sets of holes for mounting alternative groups of integrated circuit chips to be interconnected in a manner to implement other features. Thereafter, the circuit board is populated with only those integrated circuit chips required for construction of a memory subsystem with one or more selected features.
    • 印刷电路板组件包括至少两层,其能够容纳诸如设计成具有一个或多个可选特征的存储器子系统的子系统。 当蚀刻时,印刷电路板的两层包括要连接到要定位和互连在其上的所有集成电路芯片的所需数量的水平和垂直路径。 用于这种集成电路芯片的所需的孔在钻孔时包括用于实现第一组特征所需的集成电路芯片组的第一组孔,并且其将被连接到安装在不同部分上的子系统的其它集成电路芯片 的董事会。 第二组孔包括在板上,以便与第一组孔相关联,以便以相互连接的替代的集成电路芯片组来实现其他特征。 此后,电路板仅填充用于构造具有一个或多个所选特征的存储器子系统所需的那些集成电路芯片。
    • 24. 发明授权
    • Dynamic memory system which includes apparatus for performing refresh
operations in parallel with normal memory operations
    • 动态存储器系统,其包括用于与正常存储器操作并行执行刷新操作的装置
    • US4185323A
    • 1980-01-22
    • US926480
    • 1978-07-20
    • Robert B. JohnsonChester M. Nibby, Jr.
    • Robert B. JohnsonChester M. Nibby, Jr.
    • G06F13/16G11C11/406G11C13/00
    • G11C11/40603G06F13/1636G11C11/406
    • A memory subsystem for processing memory requests includes at least a pair of independently addressable dynamic memory module units. Each memory unit includes arrays of memory elements corresponding to a number of storage locations, separate addressing and data output circuits. The system further includes common timing, refresh and control circuits. When the memory request specifies a predetermined type of memory operation, the control circuits generate signals for refreshing a location within the memory unit from which data is not being fetched. The control circuits, upon the completion of the refresh operation, in response to another predetermined memory request, refreshes the corresponding row within the other unit in parallel with fetching data from first unit. Upon completing refresh operations within both units, the control circuits generate a control signal for inhibiting the refresh circuits from performing a mandatory refresh operation, upon a row of memory elements within the memory units in which access to the memory system is inhibited temporarily, enabling memory operations to continue without interruption.
    • 用于处理存储器请求的存储器子系统包括至少一对独立可寻址的动态存储器模块单元。 每个存储器单元包括对应于多个存储位置的存储器元件阵列,单独的寻址和数据输出电路。 该系统还包括通用定时,刷新和控制电路。 当存储器请求指定预定类型的存储器操作时,控制电路产生用于刷新存储器单元内未被取出数据的位置的信号。 控制电路在完成刷新操作时响应于另一预定存储器请求,与从第一单元获取数据并行地刷新另一单元内的对应行。 在完成两个单元中的刷新操作之后,控制电路产生用于禁止刷新电路执行强制刷新操作的控制信号,其中存储器单元中存储单元中的一行存储器单元暂时禁止对存储器系统的访问,使得存储器 操作继续不间断。
    • 25. 发明授权
    • High speed burst read address generation with high speed transfer
    • 高速突发读地址生成与高速传输
    • US5345573A
    • 1994-09-06
    • US771702
    • 1991-10-04
    • Raymond D. Bowden, IIIChester M. Nibby, Jr.
    • Raymond D. Bowden, IIIChester M. Nibby, Jr.
    • G06F12/08G06F13/28G11C11/408G06F12/00G11C11/409
    • G06F13/28G06F12/0879
    • A memory system coupled to a local bus of a microprocessor includes at least a pair of dynamic random access memories (DRAMs) and includes circuits for storing the first address of an address sequence at the beginning of each burst operation and uses predetermined bits to generate any one of a set of address sequences as a function of the states of these bits. A first predetermined address bit is used to select different sequences of addressed readout data words to be transferred by the pair of DRAMs to the user. A second predetermined address bit is complemented to reverse two high order addressed word responses with two low order addressed word responses of specific address sequences. These operations are utilized in all of the required address sequences within different subgroups.
    • 耦合到微处理器的本地总线的存储器系统包括至少一对动态随机存取存储器(DRAM),并且包括用于在每个突发操作开始时存储地址序列的第一地址的电路,并且使用预定位来产生任何 作为这些位的状态的函数的一组地址序列中的一个。 第一预定地址位被用于选择由该对DRAM传送给用户的寻址读出数据字的不同序列。 对第二预定地址位进行补码,以反转具有特定地址序列的两个低阶寻址字响应的两个高阶寻址字应答。 这些操作在不同子组中的所有必需地址序列中使用。
    • 27. 发明授权
    • Remap method and apparatus for a memory system which uses partially good
memory devices
    • 使用部分良好的存储器件的存储器系统的重映射方法和装置
    • US4527251A
    • 1985-07-02
    • US450691
    • 1982-12-17
    • Chester M. Nibby, Jr.Reeni GoldinTimothy A. Andrews
    • Chester M. Nibby, Jr.Reeni GoldinTimothy A. Andrews
    • G06F12/02G11C29/00G06F13/00
    • G11C29/76G06F12/0292
    • A remapping method and apparatus is employed by a memory controller system which includes a microprocessing section which couples to a memory section. The memory section includes a partially good bulk random access memory constructed from a plurality of bit wide chips containing a predefined small number of row or column faults randomly distributed. System columns of chips are organized into a plurality of groups or slices, each of which provide a different predetermined portion of the locations within the partially good bulk memory. A defective-free memory having substantially less capacity is similarly organized. Both memories couple to a static memory which is remapped under the control of the microprocessing section. Prior to remapping, the microprocessing section generates a "slice bit map" indicating the results of testing successive bit groups/slices within the bulk memory locations. Thereafter, the microprocessor section interprets the "slice bit map" and assigns column addresses in the static memory locations designating locations within the defect-free memory. The assignment is carried out in a predetermined manner according to fault category to maximize the use of all of the groups of bit locations within each defect free memory location thereby making storage available for remapping new faults.
    • 存储器控制器系统采用重映射方法和装置,该系统包括耦合到存储器部分的微处理部分。 存储器部分包括由多个位宽的芯片构成的部分良好的批量随机存取存储器,其包含预定义的少量随机分配的行或列故障。 芯片的系统列被组织成多个组或片,每个组或片提供部分良好大容量存储器内的位置的不同预定部分。 类似地组织了具有基本上较小容量的无缺陷存储器。 两个存储器耦合到在微处理部分的控制下重新映射的静态存储器。 在重新映射之前,微处理部分产生指示在大容量存储器位置内测试连续位组/片的结果的“片位图”。 此后,微处理器部分解释“切片位图”,并在无缺陷存储器内指定位置的静态存储单元中分配列地址。 根据故障类别以预定方式执行分配,以最大限度地利用每个无缺陷存储器位置内的所有位组组的使用,从而使存储可用于重新映射新故障。
    • 30. 发明授权
    • Sequential chip select decode apparatus and method
    • 顺序芯片选择解码装置及方法
    • US4323965A
    • 1982-04-06
    • US110523
    • 1980-01-08
    • Robert B. JohnsonChester M. Nibby, Jr.Dana Moore
    • Robert B. JohnsonChester M. Nibby, Jr.Dana Moore
    • G11C11/406G06F12/04G06F12/06G06F13/00
    • G06F12/04G06F12/0607
    • A memory subsystem which couples to a multiword bus for processing memory requests received therefrom includes at least a pair of independently addressable dynamic memory module units. Each memory unit includes a number of rows of random access memory (RAM) chips. The subsystem receives as part of each memory request an address, the least significant portion of which selects the row of chips to be accessed within one of the pair of memory units. Address decode circuits include gating circuits which couple to both module units. The gating circuits are interconnected so that the decoding of the least significant address bits results in the generation of a pair of row address strobe signals. These signals enable simultaneously the rows of RAM chips for access within both module units for read out of information to a multiword bus eliminating any delay in address incrementing.
    • 耦合到多字总线以用于处理从其接收的存储器请求的存储器子系统包括至少一对独立可寻址的动态存储器模块单元。 每个存储器单元包括多行随机存取存储器(RAM)芯片。 子系统作为每个存储器请求的一部分接收一个地址,其中最不重要的部分在一对存储器单元之一内选择要访问的芯片行。 地址解码电路包括耦合到两个模块单元的选通电路。 门控电路互连,使得对最低有效地址位的解码导致产生一对行地址选通信号。 这些信号同时支持RAM芯片的行,以在两个模块单元内进行访问,以将信息读出到多字总线,从而消除地址递增的任何延迟。