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21. 发明授权

US06787048B2 Method for producing thin bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method 有权
标题翻译：通过减去实施该方法的方法和装置在同一基板上制造具有不同频率的薄体声波谐振器（FBAR）的方法
公开(公告)号：US06787048B2
公开(公告)日：2004-09-07
申请号：US09799202
申请日：2001-03-05
申请人： Paul D. Bradley , Richard C. Ruby , John D. Larson, III
发明人： Paul D. Bradley , Richard C. Ruby , John D. Larson, III
IPC分类号： H01B1300
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , H04R17/10
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. The resonator is fabricated on a substrate by fabricating a bottom electrode layer and a piezoelectric (PZ) layer over the bottom electrode layer. A selected portion of the PZ layer is partially etched. Then, a top electrode is fabricated over the selected portion of the PZ layer.
摘要翻译：公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。通过在底部电极层上制造底部电极层和压电（PZ）层，在衬底上制造谐振器。部分蚀刻PZ层的选定部分。然后，在PZ层的选定部分上制造顶部电极。

22. 发明授权

US06714102B2 Method of fabricating thin film bulk acoustic resonator (FBAR) and FBAR structure embodying the method 有权
标题翻译：制造薄膜体声共振器（FBAR）的方法和体现该方法的FBAR结构
公开(公告)号：US06714102B2
公开(公告)日：2004-03-30
申请号：US09798496
申请日：2001-03-01
申请人： Richard C. Ruby , Paul Bradley , Yury Oshmyansky , Domingo A. Figueredo
发明人： Richard C. Ruby , Paul Bradley , Yury Oshmyansky , Domingo A. Figueredo
IPC分类号： H03H900
CPC分类号： H03H3/02
摘要： A method for fabricating an acoustic resonator, for example a Thin Film Bulk Acoustic Resonators (FBAR), on a substrate. A depression is etched and filled with sacrificial material. The FBAR is fabricated on the substrate spanning the depression, the FBAR having an etch hole. The depression may include etch channels in which case the FBAR may include etch holes aligned with the etch channels. A resonator resulting from the application of the technique is suspended in air and includes at least one etch hole and may include etch channels.
摘要翻译：一种用于在衬底上制造声共振器的方法，例如薄膜体声波谐振器（FBAR）。蚀刻凹陷并填充牺牲材料。 FBAR制造在跨越凹陷的衬底上，FBAR具有蚀刻孔。凹陷可以包括蚀刻通道，在这种情况下，FBAR可以包括与蚀刻通道对准的蚀刻孔。由施加该技术产生的共振器悬浮在空气中并且包括至少一个蚀刻孔，并且可以包括蚀刻通道。

23. 发明授权

US06617249B2 Method for making thin film bulk acoustic resonators (FBARS) with different frequencies on a single substrate and apparatus embodying the method 有权
标题翻译：在单个基板上制造具有不同频率的薄膜体声波谐振器（FBARS）的方法和体现该方法的装置的方法
公开(公告)号：US06617249B2
公开(公告)日：2003-09-09
申请号：US09799148
申请日：2001-03-05
申请人： Richard C. Ruby , John D. Larson, III , Paul D. Bradley
发明人： Richard C. Ruby , John D. Larson, III , Paul D. Bradley
IPC分类号： H01L21302
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10S438/926 , Y10S438/94 , Y10S438/942 , Y10S438/97 , Y10S438/976
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by introducing a mass loading top electrode layer. For a substrate having multiple resonators, the top mass loading electrode layer is introduced for only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要翻译：公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。通过引入质量负载顶部电极层在基板上制造FBAR。对于具有多个谐振器的衬底，仅为选定的谐振器引入顶部质量负载电极层，以在同一衬底上提供具有不同谐振频率的谐振器。

24. 发明授权

US06566979B2 Method of providing differential frequency adjusts in a thin film bulk acoustic resonator (FBAR) filter and apparatus embodying the method 失效
公开(公告)号：US06566979B2
公开(公告)日：2003-05-20
申请号：US09799153
申请日：2001-03-05
申请人： John D. Larson, III , Richard C. Ruby , Paul D. Bradley
发明人： John D. Larson, III , Richard C. Ruby , Paul D. Bradley
IPC分类号： H03H956
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. A resonator is fabricated on a substrate, and its top electrode 56 is oxidized to form a oxide layer 58. For a substrate having multiple resonators, the top electrode 56 of only selected resonator is oxidized to provide resonators having different resonance frequencies on the same substrate.

25. 发明授权

US06262637B1 Duplexer incorporating thin-film bulk acoustic resonators (FBARs) 有权
标题翻译：掺入薄膜体声共振器（FBAR）的双工器
公开(公告)号：US06262637B1
公开(公告)日：2001-07-17
申请号：US09324618
申请日：1999-06-02
申请人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
发明人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
IPC分类号： H03H954
CPC分类号： H03H9/568 , H03H9/706
摘要： An FBAR-based duplexer that comprises a first port, a second port, a third port, a first band-pass filter connected between the first port and the third port and a series circuit connected between the second port and the third port. The first band-pass filter includes a first ladder circuit having shunt and series elements. Each of the elements of the first ladder circuit comprises a film bulk acoustic resonator (FBAR). The series circuit includes a 90° phase shifter in series with a second band-pass filter. The second band-pass filter includes a second ladder circuit having shunt and series elements. Each of the elements of the second ladder circuit comprises a film bulk acoustic resonator. A band-pass filter comprising shunt elements and series elements in which the series elements and the shunt elements are connected to form a ladder circuit, and each of the elements includes a film bulk acoustic resonator (FBAR).
摘要翻译：一种基于FBAR的双工器，包括连接在第一端口和第三端口之间的第一端口，第二端口，第三端口，第一带通滤波器以及连接在第二端口和第三端口之间的串联电路。第一带通滤波器包括具有并联和串联元件的第一梯形电路。第一梯形电路的每个元件包括膜体声波谐振器（FBAR）。串联电路包括与第二带通滤波器串联的90°移相器。第二带通滤波器包括具有分路和串联元件的第二梯形电路。第二梯形电路的每个元件包括膜体声波谐振器。一种带通滤波器，包括并联元件和串联元件，其中串联元件和分流元件连接以形成梯形电路，并且每个元件包括膜体声波谐振器（FBAR）。

26. 发明授权

US5446811A Thermally actuated optical fiber switch 失效
标题翻译：热致动光纤开关
公开(公告)号：US5446811A
公开(公告)日：1995-08-29
申请号：US212543
申请日：1994-03-14
申请人： Leslie A. Field , Richard C. Ruby
发明人： Leslie A. Field , Richard C. Ruby
IPC分类号： G02B26/08 , G02B6/35 , G02B6/26
CPC分类号： G02B6/3508 , G02B6/3576 , G02B6/3552 , G02B6/3584 , H01H2001/0068
摘要： A micromachined device for selectively switching an optical fiber between a first and a second position includes a working leg that undergoes a greater degree of thermal expansion than a second leg with the conduction of an electrical current through the two legs. In a preferred embodiment, the working leg has a cross-sectional area that is less than that of the second leg, thereby presenting a greater electrical resistance to the current flow. The legs are each fixed to a substrate at first ends and are interconnected at second ends that are free to move relative to the substrate. The difference in electrical resistance provides a differential in thermal expansion, as the working leg lengthens to a greater degree than the second leg. The working leg deforms the second leg and the optical fiber is pressed into a second position until current flow is terminated. In another embodiment, the differential in thermal expansion is created by ensuring that the second leg has less thermal isolation from the substrate than the thermal isolation of the working leg from the substrate.
摘要翻译：用于在第一位置和第二位置之间选择性地切换光纤的微机械加工装置包括经过两条腿的电流传导而经受比第二腿部更大程度的热膨胀的工作腿部。在优选实施例中，工作腿的横截面积小于第二腿的横截面积，从而对电流呈现更大的电阻。腿在第一端各自固定到基底，并且在相对于基底自由移动的第二端处互连。电阻的差异提供了热膨胀的差异，因为工作腿比第二条腿更大程度地延长。工作腿使第二腿变形，并将光纤压入第二位置，直到电流流动终止。在另一个实施例中，热膨胀差异是通过确保第二支腿与工作支脚与基板的热隔离相比具有比基板更小的热隔离来产生的。

27. 发明授权

US09197185B2 Resonator device including electrodes with buried temperature compensating layers 有权
标题翻译：谐振器器件包括具有埋入温度补偿层的电极
公开(公告)号：US09197185B2
公开(公告)日：2015-11-24
申请号：US13601384
申请日：2012-08-31
申请人： Qiang Zou , Zhiqiang Bi , Kristina Lamers , Richard C. Ruby
发明人： Qiang Zou , Zhiqiang Bi , Kristina Lamers , Richard C. Ruby
IPC分类号： H03H9/17 , H03H3/04 , H03H9/02 , H03H9/13
CPC分类号： H03H3/04 , H03H9/02102 , H03H9/131 , H03H9/173 , H03H9/175
摘要： An acoustic resonator includes a substrate and a first composite electrode disposed over the substrate. The first composite electrode includes first and second electrically conductive layers and a first temperature compensating layer disposed between the first and second electrically conductive layers. The second electrically conductive layer forms a first electrical contact with the first electrically conductive layer on at least one side of the first temperature compensating layer, and the first electrical contact electrically shorts a first capacitive component of the first temperature compensating layer.
摘要翻译：声谐振器包括衬底和设置在衬底上的第一复合电极。第一复合电极包括第一和第二导电层和设置在第一和第二导电层之间的第一温度补偿层。所述第二导电层在所述第一温度补偿层的至少一侧与所述第一导电层形成第一电接触，并且所述第一电接触使所述第一温度补偿层的第一电容分量电短路。

28. 发明授权

US08390397B2 Bulk acoustic resonator structure comprising hybrid electrodes 有权
标题翻译：包括混合电极的体声波谐振器结构
公开(公告)号：US08390397B2
公开(公告)日：2013-03-05
申请号：US12748640
申请日：2010-03-29
申请人： Tiberiu Jamneala , Richard C. Ruby
发明人： Tiberiu Jamneala , Richard C. Ruby
IPC分类号： H03H9/70 , H03H9/54
CPC分类号： H03H9/584 , H03H9/587 , H03H9/589
摘要： In accordance with a representative embodiment, a BAW resonator structure, comprises a first BAW resonator, comprising: a first lower electrode having a first electrical resistance; a first upper electrode having a second electrical resistance; and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode. The BAW resonator structure also comprises a second BAW resonator, comprising: a second lower electrode having the second electrical resistance; a second upper electrode having the first electrical resistance; and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator. The first electrical resistance is less than the second electrical resistance. An communication device comprising a coupled resonator filter (CRF) is also disclosed.
摘要翻译：根据代表性实施例，BAW谐振器结构包括第一BAW谐振器，包括：具有第一电阻的第一下电极; 具有第二电阻的第一上电极; 以及设置在第一下电极和第一上电极之间的第一压电层。 BAW谐振器结构还包括第二BAW谐振器，包括：具有第二电阻的第二下电极; 具有第一电阻的第二上电极; 以及设置在第二下电极和第二上电极之间的第二压电层。 BAW谐振器结构还包括设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层。第一电阻小于第二电阻。还公开了一种包括耦合谐振滤波器（CRF）的通信设备。

29. 发明授权

US08232845B2 Packaged device with acoustic resonator and electronic circuitry and method of making the same 有权
标题翻译：具有声谐振器和电子电路的封装器件及其制造方法
公开(公告)号：US08232845B2
公开(公告)日：2012-07-31
申请号：US12891039
申请日：2010-09-27
申请人： Richard C. Ruby , Martha K. Small
发明人： Richard C. Ruby , Martha K. Small
IPC分类号： H03B1/00
CPC分类号： H03H9/1014 , H01L23/10 , H01L2924/0002 , H03H9/0538 , H03L1/04 , H01L2924/00
摘要： A device includes: a base substrate having a bonding pad and a peripheral pad, the peripheral pad encompassing the bonding pad; an acoustic resonator on the base substrate; a cap substrate having a bonding pad seal and a peripheral pad seal, the bonding pad seal bonding around the perimeter of the bonding pad and the peripheral pad seal bonding with the peripheral pad to define a hermetically sealed volume between the cap substrate and the base substrate, the cap substrate having a through hole therein over the bonding pad providing access for a connection to the bonding pad; a low-resistivity material layer region disposed on a portion of a surface of the cap substrate disposed inside the hermetically sealed volume, the material layer region being isolated from the bonding pad seal; and electronic circuitry disposed in the material layer region and electrical connected with the acoustic resonator.
摘要翻译：一种器件包括：具有接合焊盘和外围焊盘的基底衬底，所述外围焊盘包围所述接合焊盘; 在基底基板上的声共振器; 具有接合焊盘密封件和外围焊盘密封件的盖衬底，所述接合焊盘密封件围绕所述接合焊盘的周边结合，并且所述外围焊盘密封件与所述外围焊盘接合，以限定所述盖基板和所述基板之间的气密密封体积所述盖基板在所述焊盘上方具有通孔，所述通孔提供用于与所述焊盘的连接的通路; 所述低电阻率材料层区域设置在所述盖衬底的设置在所述密封体内的表面的一部分上，所述材料层区域与所述焊盘密封件隔离; 以及设置在材料层区域中并与声谐振器电连接的电子电路。

30. 发明授权

US08230562B2 Method of fabricating an acoustic resonator comprising a filled recessed region 有权
标题翻译：制造包括填充凹陷区域的声谐振器的方法
公开(公告)号：US08230562B2
公开(公告)日：2012-07-31
申请号：US11938078
申请日：2007-11-09
申请人： Ronald S. Fazzio , Richard C. Ruby
发明人： Ronald S. Fazzio , Richard C. Ruby
IPC分类号： H04R17/10 , B05D1/32
CPC分类号： H03H9/132 , H03H9/02149 , H03H9/13 , H03H9/173 , H03H9/175 , Y10T29/42 , Y10T29/49005 , Y10T29/49155
摘要： A method for fabricating an acoustic resonator comprises providing a substrate; fabricating a first electrode adjacent the substrate; fabricating a piezoelectric layer adjacent the first electrode; depositing electrode material to form a second electrode up to a first thickness adjacent the piezoelectric layer; depositing a first photo mask over the second electrode; depositing additional electrode material to form the second electrode up to a second thickness; removing the photo mask thereby forming a recessed region in the second electrode; and filling the recessed region with a fill material.
摘要翻译：一种用于制造声谐振器的方法包括：提供一个基片; 制造邻近衬底的第一电极; 制造邻近第一电极的压电层; 沉积电极材料以形成第二电极，直到邻近压电层的第一厚度; 在第二电极上沉积第一光掩模; 沉积额外的电极材料以形成第二电极直到第二厚度; 去除所述光掩模，从而在所述第二电极中形成凹陷区域; 并用填充材料填充凹陷区域。

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