专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090079514A1 HYBRID ACOUSTIC RESONATOR-BASED FILTERS 审中-公开
标题翻译：基于混合谐振谐振器的滤波器
公开(公告)号：US20090079514A1
公开(公告)日：2009-03-26
申请号：US11860107
申请日：2007-09-24
申请人： Tiberiu Jamneala , Martha Small , Richard C. Ruby
发明人： Tiberiu Jamneala , Martha Small , Richard C. Ruby
IPC分类号： H03H9/70 , H03H9/58
CPC分类号： H03H9/60 , H03H9/584 , H03H9/585 , H03H9/587 , H03H9/589
摘要： A hybrid acoustic resonator filter and a communication device with a hybrid acoustic resonator filter is described.
摘要翻译：描述了一种混合声学谐振滤波器和具有混合声谐振滤波器的通信装置。

2. 发明授权

US07855618B2 Bulk acoustic resonator electrical impedance transformers 有权
标题翻译：体积谐振器电阻抗变压器
公开(公告)号：US07855618B2
公开(公告)日：2010-12-21
申请号：US12112633
申请日：2008-04-30
申请人： Michael L. Frank , Richard C. Ruby , Tiberiu Jamneala
发明人： Michael L. Frank , Richard C. Ruby , Tiberiu Jamneala
IPC分类号： H03H9/00 , H03H9/15
CPC分类号： H03H9/587 , H03H9/0095 , H03H9/132 , H03H9/583
摘要： An electrical impedance transformer comprises a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency. The electrical impedance transformer also comprises: a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR. The electrical impedance transformer also includes a decoupling layer disposed between the first and the second FBARs. The first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same.
摘要翻译：电阻抗变压器包括具有第一电阻抗和第一谐振频率的第一膜体声波谐振器（FBAR）。电阻抗变压器还包括：第二FBAR，具有第二电阻抗和第二谐振频率，并且设置在第一FBAR上。电阻抗变压器还包括设置在第一和第二FBAR之间的去耦层。第一电阻抗与第二电阻抗不同，第一和第二谐振频率基本上相同。

3. 发明授权

US08981876B2 Piezoelectric resonator structures and electrical filters having frame elements 有权
标题翻译：压电谐振器结构和具有框架元件的电过滤器
公开(公告)号：US08981876B2
公开(公告)日：2015-03-17
申请号：US11713726
申请日：2007-03-05
申请人： Tiberiu Jamneala , Richard C. Ruby
发明人： Tiberiu Jamneala , Richard C. Ruby
IPC分类号： H03H9/15 , H03H9/17 , H03H9/02 , H03H9/13 , H03H9/09
CPC分类号： H03H9/173 , H03H9/02118 , H03H9/13 , H03H9/177
摘要： Film bulk acoustic resonators (FBARs) having frame elements and filters including the resonators are described.
摘要翻译：描述具有框架元件的膜体声波谐振器（FBAR）和包括谐振器的滤波器。

4. 发明申请

US20110237204A1 BULK ACOUSTIC RESONATOR STRUCTURE COMPRISING HYBRID ELECTRODES 有权
标题翻译：包含混合电极的大容量声学谐振器结构
公开(公告)号：US20110237204A1
公开(公告)日：2011-09-29
申请号：US12748640
申请日：2010-03-29
申请人： Tiberiu Jamneala , Richard C. Ruby
发明人： Tiberiu Jamneala , Richard C. Ruby
IPC分类号： H04B1/38 , H03H9/205
CPC分类号： H03H9/584 , H03H9/587 , H03H9/589
摘要： In accordance with a representative embodiment, a BAW resonator structure, comprises a first BAW resonator, comprising: a first lower electrode having a first electrical resistance; a first upper electrode having a second electrical resistance; and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode. The BAW resonator structure also comprises a second BAW resonator, comprising: a second lower electrode having the second electrical resistance; a second upper electrode having the first electrical resistance; and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator. The first electrical resistance is less than the second electrical resistance. An communication device comprising a coupled resonator filter (CRF) is also disclosed.
摘要翻译：根据代表性实施例，BAW谐振器结构包括第一BAW谐振器，包括：具有第一电阻的第一下电极; 具有第二电阻的第一上电极; 以及设置在第一下电极和第一上电极之间的第一压电层。 BAW谐振器结构还包括第二BAW谐振器，包括：具有第二电阻的第二下电极; 具有第一电阻的第二上电极; 以及设置在第二下电极和第二上电极之间的第二压电层。 BAW谐振器结构还包括设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层。第一电阻小于第二电阻。还公开了一种包括耦合谐振滤波器（CRF）的通信设备。

5. 发明授权

US08390397B2 Bulk acoustic resonator structure comprising hybrid electrodes 有权
标题翻译：包括混合电极的体声波谐振器结构
公开(公告)号：US08390397B2
公开(公告)日：2013-03-05
申请号：US12748640
申请日：2010-03-29
申请人： Tiberiu Jamneala , Richard C. Ruby
发明人： Tiberiu Jamneala , Richard C. Ruby
IPC分类号： H03H9/70 , H03H9/54
CPC分类号： H03H9/584 , H03H9/587 , H03H9/589
摘要： In accordance with a representative embodiment, a BAW resonator structure, comprises a first BAW resonator, comprising: a first lower electrode having a first electrical resistance; a first upper electrode having a second electrical resistance; and a first piezoelectric layer disposed between the first lower electrode and the first upper electrode. The BAW resonator structure also comprises a second BAW resonator, comprising: a second lower electrode having the second electrical resistance; a second upper electrode having the first electrical resistance; and a second piezoelectric layer disposed between the second lower electrode and the second upper electrode. The BAW resonator structure also comprises an acoustic coupling layer disposed between the first BAW resonator and the second BAW resonator. The first electrical resistance is less than the second electrical resistance. An communication device comprising a coupled resonator filter (CRF) is also disclosed.
摘要翻译：根据代表性实施例，BAW谐振器结构包括第一BAW谐振器，包括：具有第一电阻的第一下电极; 具有第二电阻的第一上电极; 以及设置在第一下电极和第一上电极之间的第一压电层。 BAW谐振器结构还包括第二BAW谐振器，包括：具有第二电阻的第二下电极; 具有第一电阻的第二上电极; 以及设置在第二下电极和第二上电极之间的第二压电层。 BAW谐振器结构还包括设置在第一BAW谐振器和第二BAW谐振器之间的声耦合层。第一电阻小于第二电阻。还公开了一种包括耦合谐振滤波器（CRF）的通信设备。

6. 发明申请

US20090273415A1 BULK ACOUSTIC RESONATOR ELECTRICAL IMPEDANCE TRANSFORMERS 有权
标题翻译：大容量谐波谐振器电气阻抗变压器
公开(公告)号：US20090273415A1
公开(公告)日：2009-11-05
申请号：US12112633
申请日：2008-04-30
申请人： Michael L. Frank , Richard C. Ruby , Tiberiu Jamneala
发明人： Michael L. Frank , Richard C. Ruby , Tiberiu Jamneala
IPC分类号： H03H9/54
CPC分类号： H03H9/587 , H03H9/0095 , H03H9/132 , H03H9/583
摘要： An electrical impedance transformer comprises a first film bulk acoustic resonator (FBAR), having a first electrical impedance and a first resonance frequency. The electrical impedance transformer also comprises: a second FBAR, having a second electrical impedance and a second resonance frequency, and being disposed over the first FBAR. The electrical impedance transformer also includes a decoupling layer disposed between the first and the second FBARs. The first electrical impedance differs from the second electrical impedance and the first and second resonance frequencies are substantially the same.
摘要翻译：电阻抗变压器包括具有第一电阻抗和第一谐振频率的第一膜体声波谐振器（FBAR）。电阻抗变压器还包括：第二FBAR，具有第二电阻抗和第二谐振频率，并且设置在第一FBAR上。电阻抗变压器还包括设置在第一和第二FBAR之间的去耦层。第一电阻抗与第二电阻抗不同，第一和第二谐振频率基本上相同。

7. 发明授权

US09479139B2 Resonator device including electrode with buried temperature compensating layer 有权
公开(公告)号：US09479139B2
公开(公告)日：2016-10-25
申请号：US12769791
申请日：2010-04-29
申请人： Richard C. Ruby , Wei Pang , Qiang Zou , Donald Lee
发明人： Richard C. Ruby , Wei Pang , Qiang Zou , Donald Lee
IPC分类号： H01L41/08 , H03H9/13 , H03H3/04 , H03H9/02 , H03H9/17
CPC分类号： H03H9/131 , H03H3/04 , H03H9/02102 , H03H9/173 , H03H9/175
摘要： An acoustic resonator device includes a composite first electrode on a substrate, a piezoelectric layer on the composite electrode, and a second electrode on the piezoelectric layer. The first electrode includes a buried temperature compensating layer having a positive temperature coefficient. The piezoelectric layer has a negative temperature coefficient, and thus the positive temperature coefficient of the temperature compensating layer offsets at least a portion of the negative temperature coefficient of the piezoelectric layer.

8. 发明授权

US09154103B2 Temperature controlled acoustic resonator 有权
标题翻译：温度控制声谐振器
公开(公告)号：US09154103B2
公开(公告)日：2015-10-06
申请号：US13361724
申请日：2012-01-30
申请人： Richard C. Ruby
发明人： Richard C. Ruby
IPC分类号： H03H9/54 , H03H3/02 , H03H9/08 , H03H9/02
CPC分类号： H03H9/172 , H03H3/02 , H03H9/02102 , H03H9/08 , H03H9/54
摘要： An acoustic resonator device includes an annular acoustic resonator, a heater coil and a heat sensor. The annular acoustic resonator is positioned over a trench formed in a substrate of the acoustic resonator device. The heater coil is disposed around a perimeter of the annular acoustic resonator, the heater coil including a resistor configured to receive a heater current. The heat sensor is configured to adjust the heater current in response to a temperature of the heater coil.
摘要翻译：声谐振器装置包括环形声谐振器，加热器线圈和热传感器。环形声谐振器位于形成在声谐振器装置的衬底中的沟槽之上。加热器线圈围绕环形声谐振器的周边设置，加热器线圈包括被配置为接收加热器电流的电阻器。热传感器被配置为响应于加热器线圈的温度来调节加热器电流。

9. 发明授权

US07714684B2 Acoustic resonator performance enhancement using alternating frame structure 有权
标题翻译：使用交替框架结构的声谐振器性能提升
公开(公告)号：US07714684B2
公开(公告)日：2010-05-11
申请号：US12115666
申请日：2008-05-06
申请人： Richard C. Ruby , Ronald S. Fazzio , Hongjun Feng , Paul D. Bradley
发明人： Richard C. Ruby , Ronald S. Fazzio , Hongjun Feng , Paul D. Bradley
IPC分类号： H03H9/13 , H03H9/15 , H03H9/54
CPC分类号： H03H9/02086 , H03H3/02 , H03H9/02149 , H03H9/13 , H03H9/132 , H03H9/173 , H03H2003/0428
摘要： Disclosed is an acoustic resonator that includes a substrate, a first electrode, a layer of piezoelectric material, a second electrode, and an alternating frame region. The first electrode is adjacent the substrate, and the first electrode has an outer perimeter. The piezoelectric layer is adjacent the first electrode. The second electrode is adjacent the piezoelectric layer and the second electrode has an outer perimeter. The alternating frame region is on one of the first and second electrodes.
摘要翻译：公开了一种包括基板，第一电极，压电材料层，第二电极和交替框架区域的声共振器。第一电极与衬底相邻，并且第一电极具有外周边。压电层与第一电极相邻。第二电极邻近压电层，第二电极具有外周。交替的框架区域在第一和第二电极之一上。

10. 发明授权

US06874211B2 Method for producing thin film bulk acoustic resonators (FBARs) with different frequencies on the same substrate by subtracting method and apparatus embodying the method 有权
标题翻译：通过减去实施该方法的方法和装置在同一基板上制造具有不同频率的薄膜体声共振器（FBAR）的方法
公开(公告)号：US06874211B2
公开(公告)日：2005-04-05
申请号：US09799205
申请日：2001-03-05
申请人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
发明人： Paul D. Bradley , John D. Larson, III , Richard C. Ruby
IPC分类号： H01L41/22 , H03H3/04 , H03H9/17 , H03H9/56 , H04R17/00 , H01B13/00 , H03H9/00
CPC分类号： H03H9/564 , H03H3/04 , H03H2003/0428 , H03H2003/0471 , Y10T29/42
摘要： A method for fabricating a resonator, and in particular, a thin film bulk acoustic resonator (FBAR), and a resonator embodying the method are disclosed. An FBAR is fabricated on a substrate by reducing mass from a top electrode layer. For a substrate having multiple resonators, mass is reduced from only selected resonator to provide resonators having different resonance frequencies on the same substrate.
摘要翻译：公开了一种用于制造谐振器，特别是薄膜体声波谐振器（FBAR）的方法和体现该方法的谐振器。通过减少从顶部电极层的质量而在衬底上制造FBAR。对于具有多个谐振器的衬底，仅从所选择的谐振器减小质量，以在同一衬底上提供具有不同谐振频率的谐振器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式