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    • 23. 发明申请
    • Photocatalytic air purifier
    • 光催化空气净化器
    • US20060280660A1
    • 2006-12-14
    • US11148218
    • 2005-06-09
    • Robert Weiss
    • Robert Weiss
    • B01J19/12
    • A61L9/205B01D53/88B01D2255/20707B01D2255/20738B01D2255/802F24F2003/1667
    • A photocatalytic air purifier is disclosed wherein the photocatalytic air purifier includes an ultraviolet light source that generates heat and a support member having a photocatalyst coated on a first surface of the support member. The support member is positionable distal to the ultraviolet light source, the support member exposing an optimal amount of surface area to the light source such that such that the light source may irradiate the photocatalyst coated on the first surface of the support member. The heat generated by the light source draws ambient air between the first surface member and the light source by convection such that the first surface is in continuous contact with the ambient air.
    • 公开了一种光催化空气净化器,其中光催化空气净化器包括产生热的紫外光源和具有涂覆在支撑构件的第一表面上的光催化剂的支撑构件。 支撑构件可位于远离紫外光源的位置,支撑构件向光源暴露最佳量的表面积,使得光源可以照射涂覆在支撑构件的第一表面上的光催化剂。 由光源产生的热量通过对流在第一表面件和光源之间吸收环境空气,使得第一表面与环境空气连续接触。
    • 24. 发明申请
    • METHOD FOR REMOVING MATERIAL FROM A SEMICONDUCTOR WAFER
    • 从半导体滤波器中去除材料的方法
    • US20060211338A1
    • 2006-09-21
    • US11377946
    • 2006-03-16
    • Alexander HeilmaierRobert DrexlerAnton HuberRobert Weiss
    • Alexander HeilmaierRobert DrexlerAnton HuberRobert Weiss
    • B24B51/00
    • B24B37/042
    • The invention relates to a method for removing material from a semiconductor wafer by machining, in which a semiconductor wafer held on a wafer holder and a grinding wheel lying opposite it are rotated independently of one another, the grinding wheel being arranged laterally offset with respect to the semiconductor wafer and being positioned in such a way that an axial center of the semiconductor wafer passes into a working range of the grinding wheel, the grinding wheel being moved in the direction of the semiconductor wafer at an infeed rate, with the result that grinding wheel and semiconductor wafer are advanced toward one another while the semiconductor wafer and grinding wheel are rotating about parallel axes, so that a surface of the semiconductor wafer is ground, with the grinding wheel being moved back at a return rate after a defined amount of material has been removed, wherein the grinding wheel and semiconductor wafer are advanced toward one another by a distance of 0.03-0.5 μm during one revolution of the semiconductor wafer.
    • 本发明涉及通过机械加工从半导体晶片去除材料的方法,其中保持在晶片保持器上的半导体晶片和与其相对的研磨轮彼此独立地旋转,所述砂轮相对于 半导体晶片并且以这样的方式定位,使得半导体晶片的轴向中心进入砂轮的工作范围,砂轮以进给速度沿半导体晶片的方向移动,结果是研磨 轮和半导体晶片彼此前进,同时半导体晶片和砂轮围绕平行轴线旋转,使得半导体晶片的表面被研磨,其中砂轮在定义量的材料之后以返回速率返回 已经被除去,其中砂轮和半导体晶片相对于彼此前进0.03-0的距离。 在半导体晶片的一圈内的5um。
    • 29. 发明授权
    • Process for producing polyamides from aminonitriles
    • 从氨腈制备聚酰胺的方法
    • US06194538B1
    • 2001-02-27
    • US09242714
    • 1999-02-22
    • Robert WeissDieter KraussDieter KellerGunter PipperWolfgang HarderAlfons LudwigRalf Mohrschladt
    • Robert WeissDieter KraussDieter KellerGunter PipperWolfgang HarderAlfons LudwigRalf Mohrschladt
    • C08G6904
    • C08G69/04C08G69/08C08G69/28C08G69/36
    • A process for preparing a polyamide by reacting at least one aminonitrile with water comprises: (1) reacting at least one aminonitrile with water at a temperature from 100 to 360° C. and a pressure from 0.1 to 35×106 Pa to obtain a reaction mixture, (2) further reacting the reaction mixture at a temperature from 150 to 400° C. and a pressure which is lower than the pressure in step 1, the temperature and the pressure being selected so as to obtain a first gas phase and a first liquid or a first solid phase or a mixture of first solid and first liquid phase, and the first gas phase is separated from the first liquid or the first solid phase or from the mixture of first liquid and first solid phase, and (3) admixing the first liquid or the first solid phase or the mixture of first liquid and first solid phase with a gaseous or liquid phase comprising water at a temperature from 150 to 360° C. and a pressure from 0.1 to 30×106 Pa to obtain a product mixture.
    • 通过使至少一种氨基腈与水反应制备聚酰胺的方法包括:(1)在100至360℃的温度和0.1至35×10 6 Pa的压力下使至少一种氨基腈与水反应,得到反应混合物, (2)在150-400℃的温度和低于步骤1中的压力的​​压力下使反应混合物进一步反应,选择温度和压力以获得第一气相和第一液体 或第一固相或第一固相和第一液相的混合物,并且第一气相与第一液体或第一固相或第一液体和第一固相的混合物分离,以及(3)将 第一液体或第一固相或第一液体和第一固相的混合物与气相或液相在150至360℃的温度和0.1至30×10 6 Pa的压力下包含水以获得产物混合物。