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21. 发明申请

US20070213930A1 Position Estimation System 审中-公开
标题翻译：位置估算系统
公开(公告)号：US20070213930A1
公开(公告)日：2007-09-13
申请号：US11578328
申请日：2004-05-21
申请人： Kiyomi Sakamoto , Atsushi Iisaka , Atsushi Yamashita , Noboru Nomura , Hiroyuki Ogino , Shigeki Ueda
发明人： Kiyomi Sakamoto , Atsushi Iisaka , Atsushi Yamashita , Noboru Nomura , Hiroyuki Ogino , Shigeki Ueda
IPC分类号： G01C21/00
CPC分类号： G01C21/12 , G01C21/28 , G01C22/006 , G01S19/48
摘要： In a position estimation apparatus, an information acquisition/storage section 3 acquires, when a receiver 1 can track an artificial satellite, a current position obtained from the receiver 1 and an output value from each of pressure sensors 2R and 2L, and then stores at least a travel speed and a travel direction for a user and the obtained output value. Also, when the receiver 1 cannot track the artificial satellite, a locator 4 in the position estimation apparatus retrieves, from the information acquisition/storage section 3, a travel speed and a travel direction of the user based on the output value acquired from each of the sensors 2R and 2L and the output value stored in the information acquisition/storage section 3. Thereafter, the locator 4 estimates a current position of the user based on the retrieved travel speed and travel direction.
摘要翻译：在位置估计装置中，当接收机1能够跟踪人造卫星时，获取从接收机1获得的当前位置和来自压力传感器2 R和2 L的输出值的信息获取/存储部分3，然后存储用户的行驶速度和行驶方向的至少一个以及所获得的输出值。此外，当接收机1不能跟踪人造卫星时，位置估计装置中的定位器4基于从每个接收机1获取的输出值，从信息获取/存储部分3检索用户的行进速度和行进方向传感器2 R和2 L以及存储在信息获取/存储部分3中的输出值。此后，定位器4基于检索到的行驶速度和行驶方向来估计用户的当前位置。

22. 发明申请

US20060009248A1 Mobile communication device containable in ad hoc network 失效
标题翻译：移动通信设备可以在ad hoc网络中包含
公开(公告)号：US20060009248A1
公开(公告)日：2006-01-12
申请号：US10535101
申请日：2004-05-21
申请人： Kiyomi Sakamoto , Atsushi Iisaka , Atsushi Yamashita , Noboru Nomura
发明人： Kiyomi Sakamoto , Atsushi Iisaka , Atsushi Yamashita , Noboru Nomura
IPC分类号： H04Q7/20 , H04B7/00
CPC分类号： H04W72/02 , H04W72/0406 , H04W84/18
摘要： In a mobile communication device 1, when an inquiry packet sent from another mobile communication device 1 for inquiring whether to accept or deny the participation in an ad hoc network is transferred to a work area 13, a transmission/reception control section 12 determines whether a denial flag set in a storage device 6 is 1. When the denial flag is 1, the transmission/reception control section 12 generates a first response for denying the participation in the ad hoc network, and transmits it through a transmission/reception section 14 to the another mobile communication device 1 having transmitted the inquiry packet.
摘要翻译：在移动通信装置1中，当从另一移动通信装置1发送的询问是否接受或拒绝参与自组织网络的查询分组被传送到工作区域13时，发送/接收控制部分12确定是否设置在存储装置6中的拒绝标志为1。当拒绝标志为1时，发送/接收控制部分12生成拒绝参与自组织网络的第一响应，并且通过发送/接收部分14将其发送到已经发送了查询分组的另一个移动通信设备1 。

23. 发明授权

US06859728B2 Navigation system 失效
标题翻译：导航系统
公开(公告)号：US06859728B2
公开(公告)日：2005-02-22
申请号：US10404097
申请日：2003-04-02
申请人： Kiyomi Sakamoto , Noboru Nomura , Shinji Kubota
发明人： Kiyomi Sakamoto , Noboru Nomura , Shinji Kubota
IPC分类号： G01C21/36 , G01C21/00
CPC分类号： G01C21/3641 , G01C21/36 , G01C21/3655 , G01C21/367 , G01C21/3673
摘要： A navigation system for providing different modes of navigation guidance to drivers is provided. A smart card stores user information. In a main apparatus, a parameter table storage section stores parameters which are used for controlling the outputting of navigation guidance to an entity. A control section acquires at least one parameter from the parameter table storage section based on user information stored in the smart card, and thereafter generates information necessary for providing navigation guidance for the entity in accordance with the acquired parameter(s). A display section or an audio output section outputs various information generated by the control section.
摘要翻译：提供了一种用于向驾驶员提供不同模式的导航指导的导航系统。智能卡存储用户信息。在主装置中，参数表存储部存储用于控制向实体输出导航指导的参数。控制部分基于存储在智能卡中的用户信息从参数表存储部分中获取至少一个参数，然后根据所获取的参数生成为实体提供导航指导所必需的信息。显示部分或音频输出部分输出由控制部分生成的各种信息。

24. 发明授权

US06310561B1 Transmission system and coding communication method for a transmission system 失效
标题翻译：传输系统和传输系统的编码通信方法
公开(公告)号：US06310561B1
公开(公告)日：2001-10-30
申请号：US08901017
申请日：1997-07-25
申请人： Noboru Nomura , Takashi Yoshida , Joji Kane
发明人： Noboru Nomura , Takashi Yoshida , Joji Kane
IPC分类号： G08G109
CPC分类号： G08G1/096716 , G01S1/68 , G01S13/74 , G01S13/825 , G08G1/096725 , G08G1/09675 , G08G1/096775
摘要： The conventional combination cannot realize an efficient road traffic system as a whole. A transmission system has a plurality of modules installed at different positions along a predetermined road. Each of the plurality of the modules includes a receiving section for receiving an input signal and a transmission section for transmitting an output signal on the basis of the input signal according to a predetermined radio scheme. Each of the plurality of the modules receives and transmits a signal, whereby the whole or part of the information contained in the signal is transmitted along the whole or part of the predetermined road. This transmission system can construct an efficient integrated road traffic system as a whole.
摘要翻译：传统的组合整体上无法实现有效的道路交通系统。传动系统具有沿预定道路安装在不同位置的多个模块。多个模块中的每一个包括用于接收输入信号的接收部分和用于根据预定无线电方案基于输入信号发送输出信号的发送部分。多个模块中的每一个接收并发送信号，由此信息中包含的信息的全部或部分沿着预定道路的全部或部分传送。这种传输系统可以构建一个高效的综合道路交通系统。

25. 发明授权

US5753536A Semiconductor device and associated fabrication method 失效
标题翻译：半导体器件及相关制造方法
公开(公告)号：US5753536A
公开(公告)日：1998-05-19
申请号：US520252
申请日：1995-08-28
申请人： Tatsuo Sugiyama , Shuji Hirao , Kousaku Yano , Noboru Nomura
发明人： Tatsuo Sugiyama , Shuji Hirao , Kousaku Yano , Noboru Nomura
IPC分类号： H01L21/98 , H01L25/065 , H01L21/60
CPC分类号： H01L23/544 , H01L21/76898 , H01L24/05 , H01L24/12 , H01L24/16 , H01L24/80 , H01L24/81 , H01L25/0657 , H01L25/50 , H01L2223/54426 , H01L2224/0401 , H01L2224/05571 , H01L2224/08145 , H01L2224/13099 , H01L2224/80141 , H01L2224/80357 , H01L2224/80895 , H01L2224/80896 , H01L2224/81121 , H01L2224/81801 , H01L2224/81894 , H01L2224/83894 , H01L2224/9202 , H01L2225/06513 , H01L2225/06593 , H01L2924/0002 , H01L2924/01005 , H01L2924/01006 , H01L2924/01007 , H01L2924/01013 , H01L2924/01014 , H01L2924/01015 , H01L2924/01018 , H01L2924/01022 , H01L2924/01023 , H01L2924/01028 , H01L2924/01029 , H01L2924/01033 , H01L2924/01039 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/014 , H01L2924/05042 , H01L2924/19043 , H01L2924/30105 , H01L2924/3511
摘要： A first electrode and a first insulating layer of electrode insulation are formed on a first semiconductor substrate. A second electrode and a second insulating layer of electrode insulation are formed on a second semiconductor substrate. The first semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement. Likewise, the second semiconductor substrate has at its surface a pattern of recesses/projections (i.e., a pattern of sawteeth in cross section) at regular intervals in stripe arrangement, wherein the pattern of the second semiconductor substrate has a phase shift of 180 degrees with respect to the pattern of the first semiconductor substrate. The first and second semiconductor substrates are bonded together with their patterns in engagement.
摘要翻译：在第一半导体衬底上形成有电极绝缘体的第一电极和第一绝缘层。在第二半导体衬底上形成第二电极和电极绝缘的第二绝缘层。第一半导体衬底在其表面上以条纹布置的规则间隔在其表面处具有凹槽/突起的图案（即横截面的锯齿形图案）。类似地，第二半导体衬底在其表面上在条纹布置中以规则的间隔在其表面处具有凹槽/突起的图案（即，横截面的锯齿形图案），其中第二半导体衬底的图案具有180度的相移，相对于第一半导体衬底的图案。第一和第二半导体衬底以它们的图案接合在一起。

26. 发明授权

US5723909A Semiconductor device and associated fabrication method 失效
标题翻译：半导体器件及相关制造方法
公开(公告)号：US5723909A
公开(公告)日：1998-03-03
申请号：US712237
申请日：1996-09-11
申请人： Kousaku Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
发明人： Kousaku Yano , Tatsuo Sugiyama , Satoshi Ueda , Noboru Nomura
IPC分类号： H01L21/205 , H01L21/316 , H01L21/768 , H01L23/522 , H01L23/532 , H01L23/58
CPC分类号： H01L23/5329 , H01L21/76801 , H01L21/76826 , H01L21/76832 , H01L21/76834 , H01L2924/0002
摘要： A first metallization layer is locally formed on the surface of a semiconductor substrate thereby leaving portions of the semiconductor substrate's surface exposed. A first silicon oxide layer is then formed in such a manner that it covers the exposed portions of the semiconductor substrate's surface and the first metallization layer. This is followed by the formation of an HMDS molecular layer on the first silicon oxide layer. Then, a second silicon oxide is formed on the molecular layer by means of a CVD process utilizing the chemical reaction of ozone with TEOS. Finally, a second metallization layer is locally formed on the second silicon oxide layer.
摘要翻译：第一金属化层局部地形成在半导体衬底的表面上，从而使半导体衬底表面的部分露出。然后以这样的方式形成第一氧化硅层，使得其覆盖半导体衬底的表面和第一金属化层的暴露部分。随后在第一氧化硅层上形成HMDS分子层。然后，通过使用臭氧与TEOS的化学反应的CVD工艺在分子层上形成第二氧化硅。最后，第二金属化层局部形成在第二氧化硅层上。

27. 发明授权

US5569628A Semiconductor device fabrication method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US5569628A
公开(公告)日：1996-10-29
申请号：US535323
申请日：1995-09-27
申请人： Kousaku Yano , Tomoyasu Murakami , Masayuki Endo , Noboru Nomura
发明人： Kousaku Yano , Tomoyasu Murakami , Masayuki Endo , Noboru Nomura
IPC分类号： H01L21/28 , H01L21/768 , H01L21/465
CPC分类号： H01L21/76841 , H01L21/76843
摘要： A silicon dioxide film is partly etched away to form an opening thereby exposing a silicon substrate. The surface of the opening, which is almost entirely covered with Si-OH, is coated with hexamethyldisilazane (HMDS) to bring about a silylation reaction. This causes the silicon substrate surface to be covered with a molecular film formed by replacing the hydrogen part in Si-OH with Si((CH.sub.3).sub.3. Atoms of aluminum are ejected by a sputtering process. The ejected aluminum atoms collide with the molecular film. Although some hydrocarbons (CH.sub.x) are sputtered or ejected due to such collision, a SiO.sub.x C.sub.y H.sub.z film 12' transformed from the molecular film is left between an aluminum film deposited and the silicon substrate. This SiO.sub.x C.sub.y H.sub.z film 12' acts as a barrier metal. The presence of the SiO.sub.x C.sub.y H.sub.z film prevents the occurrence of counter diffusion in the Al-Si system. No spikes are formed as a result.
摘要翻译：部分地蚀刻掉二氧化硅膜以形成开口，从而暴露硅衬底。几乎完全用Si-OH覆盖的开口的表面涂覆有六甲基二硅氮烷（HMDS）以进行甲硅烷基化反应。这导致硅衬底表面被用Si（（CH 3）3代替Si-OH中的氢部分而形成的分子膜覆盖，铝的原子通过溅射工艺喷射，喷射的铝原子与分子膜碰撞虽然由于这种碰撞而使一些烃类（CHx）溅射或喷射，但是从分子膜转化的SiO x C y H z膜12'留在沉积的铝膜和硅基板之间，该SiOxCyHz膜12'作为阻挡金属， SiOxCyHz膜的存在防止了在Al-Si系统中产生反向扩散，结果不形成尖峰。

28. 发明授权

US5527662A Process for forming fine pattern 失效
标题翻译：形成精细图案的工艺
公开(公告)号：US5527662A
公开(公告)日：1996-06-18
申请号：US185237
申请日：1994-01-24
申请人： Kazuhiko Hashimoto , Noboru Nomura
发明人： Kazuhiko Hashimoto , Noboru Nomura
IPC分类号： G03F7/004 , G03F7/038 , G03F7/039 , G03F7/09 , G03F7/20 , H01L21/027 , H01L21/30 , G03C5/00 , G03F7/38 , G03F7/40
CPC分类号： G03F7/039 , G03F7/038 , G03F7/094 , G03F7/2059 , Y10S430/143 , Y10S438/949
摘要： In a process using a single-layer or multi-layer resist, by using a resist material comprising an acid-decomposable polymer, an acid generator and a conducting polymer or a resist material comprising a monomer to be made reactive by an acid, an acid generator and a conducting polymer, there can be formed a fine pattern precisely without inviting charging during charged beam writing.
摘要翻译：在使用单层或多层抗蚀剂的方法中，通过使用包含酸可分解聚合物，酸产生剂和导电聚合物的抗蚀剂材料或包含由酸反应的单体的抗蚀材料，酸发电机和导电聚合物，可以精确地形成精细图案，而不会在带电波束写入期间带电充电。

29. 发明授权

US5332880A Method and apparatus for generating highly dense uniform plasma by use of a high frequency rotating electric field 失效
标题翻译：通过使用高频旋转电场产生高密度均匀等离子体的方法和装置
公开(公告)号：US5332880A
公开(公告)日：1994-07-26
申请号：US40348
申请日：1993-03-30
申请人： Masafumi Kubota , Kenji Harafuji , Tokuhiko Tamaki , Mitsuhiro Ohkuni , Noboru Nomura , Ichiro Nakayama
发明人： Masafumi Kubota , Kenji Harafuji , Tokuhiko Tamaki , Mitsuhiro Ohkuni , Noboru Nomura , Ichiro Nakayama
IPC分类号： C23C16/509 , H01J37/32 , H05H1/46 , B23K9/00 , H01L21/306
CPC分类号： H01J37/32091 , C23C16/509 , H01J37/32165 , H01J37/32623 , H05H1/46 , Y10S977/724 , Y10S977/844
摘要： At lateral sides of a plasma generating part under a vacuum, first to fourth lateral electrodes are so disposed as to surround the plasma generating part. High frequency electric power is supplied to the first lateral electrode from a first high frequency power supply, high frequency electric power is supplied to the second lateral electrode from the first high frequency power supply through a first delay circuit, high frequency electric power is supplied to the third lateral electrode from the first high frequency power supply through the first delay circuit and through a second delay circuit, and high frequency electric power is supplied to the fourth lateral electrode from the first high frequency power supply through the first and second delay circuits and through a third delay circuit. Accordingly, there are respectively applied, to the first to fourth lateral electrodes, the high frequency electric powers of which frequencies are equal to one another and of which phases are successively different from one another, and there is excited, in the plasma generating part, a rotational electric field to cause electrons in the plasma generating part to present rotational motions.
摘要翻译：在真空下的等离子体产生部分的侧面，第一至第四横向电极被设置成围绕等离子体产生部分。从第一高频电源向第一横向电极提供高频电力，通过第一延迟电路从第一高频电源向第二横向电极提供高频电力，将高频电力供给至来自第一高频电源的第三横向电极通过第一延迟电路和第二延迟电路，并且高频电力通过第一和第二延迟电路从第一高频电源提供给第四横向电极;以及通过第三个延迟电路。因此，分别向第一至第四横向电极施加频率彼此相等且相位相互不同的高频电力，并且在等离子体产生部分中激发，使等离子体产生部中的电子产生旋转运动的旋转电场。

30. 再颁专利

USRE33669E Aligning exposure method 失效
标题翻译：调整曝光方式
公开(公告)号：USRE33669E
公开(公告)日：1991-08-20
申请号：US296721
申请日：1989-01-12
申请人： Noboru Nomura , Koichi Kugimiya , Takayoshi Matsumura , Taketoshi Yonezawa
发明人： Noboru Nomura , Koichi Kugimiya , Takayoshi Matsumura , Taketoshi Yonezawa
IPC分类号： G03F7/20 , G03F9/00
CPC分类号： G03F9/7049 , G03F7/70408 , G03F9/7076
摘要： Disclosed .[.in.]. .Iadd.is .Iaddend.an aligning and exposing method suitable for use in the production of LSIs. Coherent ray beams are applied from two directions to form .Iadd.an .Iaddend.interference fringe through interference of the coherent rays. A diffraction grid is disposed in the optic paths of the ray beams substantially in parallel with the interference fringe. The ray beams reflected .[.and.]. .Iadd.or .Iaddend.transmitted by the grid are converged by a lens system and the intensities of the ray beams are measured to detect the relative position between the interference fringe formed by two coherent ray beams and the diffraction grid, thereby to permit a highly accurate alignment of fine semiconductor element. The pitch of the grid on the substrate is selected to be n (n being an integer) times as large as the pitch of the interference fringe, so that the grid for alignment purpose is formed simultaneously with the formation of the LSI pattern by photolithographic technic. With this method, it is possible to attain a high degree of accuracy of alignment, and to conduct the subsequent exposure using the same ray beam source as that used for the alignment.

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