专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明申请

US20060114113A1 Gas detection system 有权
标题翻译：气体检测系统
公开(公告)号：US20060114113A1
公开(公告)日：2006-06-01
申请号：US11070460
申请日：2005-03-03
申请人： Koichi Yokosawa , Sadaki Nakano , Yasushi Goto
发明人： Koichi Yokosawa , Sadaki Nakano , Yasushi Goto
IPC分类号： G01N7/00
CPC分类号： G01N33/0063 , G01N27/123
摘要： A gas detection system capable of suppressing the power consumption of the system using gas sensors required for heating for measurement at high accuracy, comprising a server and a plurality of gas sensors connected by way of wireless communication with the server, in which each of the gas sensors is provided with a heater, a controller for controlling the ON-OFF for the power supply to the heater and a comparator for comparing the detected gas concentration with a predetermined threshold value. In the gas detection system, electric power is not usually supplied to the heater in each of the gas sensors and the gas sensor measures the gas concentration at a low accuracy and always compares it with the threshold value. In a case where the gas concentration exceeds the threshold value in one of the gas sensors, it turns the heater of its own to ON thereby switching the measurement to that at high accuracy and turns the heater to OFF upon completing the measurement. At the same time, it informs the detection for the excess of threshold value to the server and the server lowers the threshold value of the gas sensors in the vicinity of the gas sensor that has informed the detection for the excess of threshold value to make the monitoring level severer.
摘要翻译：一种气体检测系统，其能够以高精度抑制用于加热测量所需的气体传感器的系统的功率消耗，包括通过与服务器的无线通信连接的服务器和多个气体传感器，其中每个气体传感器设置有加热器，用于控制对加热器的电源的ON-OFF的控制器和用于将检测到的气体浓度与预定阈值进行比较的比较器。在气体检测系统中，通常不向每个气体传感器中的加热器供电，并且气体传感器以低精度测量气体浓度，并且始终将其与阈值进行比较。在其中一个气体传感器中气体浓度超过阈值的情况下，它将其自身的加热器变为ON，从而将测量值以高精度切换，并在完成测量时将加热器转为OFF。同时，它通知检测到服务器的阈值过大，服务器和服务器降低气体传感器附近的气体传感器的阈值，该气体传感器通知检测阈值超过阈值，监控级别更严重。

22. 发明授权

US06797566B1 Semiconductor integrated circuit device and process for producing the same 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US06797566B1
公开(公告)日：2004-09-28
申请号：US10031117
申请日：2002-01-16
申请人： Takashi Kobayashi , Yasushi Goto , Tokuo Kure , Hideaki Kurata , Hitoshi Kume , Katsutaka Kimura , Syunichi Saeki
发明人： Takashi Kobayashi , Yasushi Goto , Tokuo Kure , Hideaki Kurata , Hitoshi Kume , Katsutaka Kimura , Syunichi Saeki
IPC分类号： H01L21336
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42328 , H01L29/7881
摘要： A semiconductor integrated circuit device with third gates comprising second conduction type source/drain diffusion layer regions 205 formed in first conduction type well 201, floating gates 203b formed on semiconductor substrate 200 through an insulator film 202, control gates 211a formed on floating gates 203b through nitrogen-introduced silicon oxide film 210a and third gates 207a different from the floating gates and the control gates, formed through the semiconductor substrates, the floating gates, the control gates and the insulator film, where the third gates are formed as filled in gaps between the floating gates existing in a vertical direction to word lines and channels and the height of third gates 207a thus formed is made lower than that of floating gates 203b, has improved reduction of memory cell size and operating speed and improved reliability after programming/erasing cycles.
摘要翻译：具有第三栅极的半导体集成电路器件包括形成在第一导电型阱201中的第二导电型源极/漏极扩散层区域205，通过绝缘膜202形成在半导体衬底200上的浮动栅极203b，形成在浮动栅极203b上的控制栅极211b 通过半导体衬底，浮置栅极，控制栅极和绝缘膜形成的与浮置栅极和控制栅极不同的氮引入氧化硅膜210a和第三栅极207a，其中第三栅极形成为填充在第存在于字线和通道的垂直方向上的浮动栅极以及如此形成的第三栅极207a的高度低于浮置栅极203b的高度，改善了编程/擦除周期后存储单元尺寸和操作速度的降低以及改进的可靠性。

23. 发明授权

US06660647B1 Method for processing surface of sample 失效
标题翻译：样品表面处理方法
公开(公告)号：US06660647B1
公开(公告)日：2003-12-09
申请号：US09646012
申请日：2001-01-11
申请人： Tetsuo Ono , Takafumi Tokunaga , Tadashi Umezawa , Motohiko Yoshigai , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takashi Sato , Yasushi Goto
发明人： Tetsuo Ono , Takafumi Tokunaga , Tadashi Umezawa , Motohiko Yoshigai , Tatsumi Mizutani , Tokuo Kure , Masayuki Kojima , Takashi Sato , Yasushi Goto
IPC分类号： H01L2100
CPC分类号： H01J37/32082 , H01L21/32136 , H01L21/32139
摘要： A surface processing method of a sample having a mask layer that does not contain carbon as a major component formed on a substance to be processed, the substance being a metal, semiconductor and insulator deposited on a silicon substrate, includes the steps of installing the sample on a sample board in a vacuum container, generating a plasma that consists of a mixture of halogen gas and adhesive gas inside the vacuum container, applying a radio frequency bias voltage having a frequency ranging from 200 kHz to 20 MHz on the sample board, and controlling a periodic on-off of the radio frequency bias voltage with an on-off control frequency ranging from 100 Hz to 10 kHz.
摘要翻译：具有在被处理物质上形成的不含有碳作为主要成分的掩模层的样品的表面处理方法，该物质是沉积在硅基板上的金属，半导体和绝缘体，该物质包括如下步骤：在真空容器中的样品板上，在真空容器内产生由卤素气体和粘合气体的混合物构成的等离子体，在样品板上施加频率范围为200kHz〜20MHz的射频偏置电压，以从100Hz到10kHz的开关控制频率来控制射频偏置电压的周期性的断开。

24. 发明授权

US08605851B2 Rod block monitor 有权
标题翻译：杆块监视器
公开(公告)号：US08605851B2
公开(公告)日：2013-12-10
申请号：US11494541
申请日：2006-07-28
申请人： Naotaka Oda , Yasushi Goto , Tadashi Miyazaki
发明人： Naotaka Oda , Yasushi Goto , Tadashi Miyazaki
IPC分类号： G21C17/00
CPC分类号： G21C7/08 , G21C17/10 , G21Y2002/201 , G21Y2002/304 , G21Y2004/30 , G21Y2004/40 , Y02E30/39
摘要： To provide a rod block monitor in which irrespective of the selection or non-selection of a control rod, such a process is repeatedly executed that gain adjustment is performed at fixed intervals at all times to match a local area average value of signals of neutron detectors surrounding the control rod with a nuclear reactor average power and a block level appropriate to the local area average value of the neutron detector signals after the gain adjustment is set.
摘要翻译：为了提供一种棒状监视器，其中不管选择或不选择控制杆，这种处理被重复地执行，总是以固定的间隔执行增益调整以匹配中子检测器的信号的局部平均值围绕具有核反应堆平均功率的控制棒，并且在设置增益调整之后，适合于中子探测器信号的局部平均值的块电平。

25. 发明授权

US07667559B2 Switch, semiconductor device, and manufacturing method thereof 失效
标题翻译：开关，半导体器件及其制造方法
公开(公告)号：US07667559B2
公开(公告)日：2010-02-23
申请号：US11472355
申请日：2006-06-22
申请人： Kiyoko Yamanaka , Yasushi Goto
发明人： Kiyoko Yamanaka , Yasushi Goto
IPC分类号： H01H51/22
CPC分类号： H01H1/0036 , B81B2207/07 , B81C1/00246 , B81C2203/0136 , B81C2203/0735 , H01H59/0009
摘要： It is an objective to achieve a MEMS switch which can be mounted with a CMOS circuit and has a contact point with high reliability, both mechanically and electrically. An insulator having a compatibility with a CMOS process is formed at the contact surface of a cantilever beam constituting a MEMS switch and a fixed contact 2 opposite thereto. When the switch is used the cantilever beam is moved by applying a voltage to the pull-in electrode and the cantilever beam. After the cantilever beam makes contact with the fixed contact, a voltage exceeding the breakdown field strength of the insulator is applied to the insulator, resulting in dielectric breakdown occurring. By modifying the insulator once, the mechanical fatigue concentration point of the switch contact point is protected, and a contact point is achieved as well in which electrical signals are transmitted through the current path formed by the dielectric breakdown.
摘要翻译：实现可以安装有CMOS电路并具有机械和电气的高可靠性的接触点的MEMS开关的目的。在构成MEMS开关的悬臂梁和与其相对的固定触头2的接触表面处形成具有与CMOS工艺兼容的绝缘体。当使用开关时，通过向拉入电极和悬臂梁施加电压来移动悬臂梁。在悬臂梁与固定触点接触之后，超过绝缘体的击穿场强的电压被施加到绝缘体上，导致电介质击穿。通过改变绝缘体一次，保护开关接触点的机械疲劳浓度点，并且实现接触点，其中电信号通过由电介质击穿形成的电流路径传输。

26. 发明申请

US20080088208A1 Actuator system 失效
标题翻译：执行器系统
公开(公告)号：US20080088208A1
公开(公告)日：2008-04-17
申请号：US11907057
申请日：2007-10-09
申请人： Kiyoka Yamanaka , Yasushi Goto , Takehiko Hasebe
发明人： Kiyoka Yamanaka , Yasushi Goto , Takehiko Hasebe
IPC分类号： H01L41/047
CPC分类号： H02N2/028 , B82Y10/00 , G11B9/1436 , H02N2/021
摘要： An actuator using a piezoelectric element is stably operated at high speed. The actuator includes driving units provided to face a carrier stage and moving the carrier stage in an X-axis direction, piezoelectric elements provided to the driving units respectively and expanding and contracting in the X-axis direction, a carrier electrode provided on a surface of the carrier stage on a driving-unit side, and driving electrodes provided on surfaces of the driving units on a carrier stage side and electrostatically adsorbing the carrier electrode. Signals not synchronized with each other are applied to the piezoelectric elements.
摘要翻译：使用压电元件的致动器稳定地高速运转。致动器包括驱动单元，其被设置为面向载物台并沿着X轴方向移动载物台，分别设置在驱动单元上并沿X轴方向扩张和收缩的压电元件，设置在载体台的表面上的载体电极驱动单元侧的载体台和设置在载体台一侧的驱动单元的表面上的驱动电极，并静电吸附载体电极。不同步的信号被施加到压电元件。

27. 发明授权

US07306941B2 Biochemical measuring chip and measuring apparatus 有权
标题翻译：生化测量芯片和测量仪器
公开(公告)号：US07306941B2
公开(公告)日：2007-12-11
申请号：US11007366
申请日：2004-12-09
申请人： Toru Fujimura , Yasushi Goto
发明人： Toru Fujimura , Yasushi Goto
IPC分类号： C12M1/34 , C12M3/00
CPC分类号： G01N33/54373 , G01N21/55
摘要： A simple and convenient sensor and measuring apparatus utilizing the optical interference effect of an optical thin film capable of measuring the binding between biochemical substances at a high throughput and having alkali resistance. An optical thin film of silicon nitride is disposed on the first surface and the rear surface of a silicon substrate, and the thickness of the silicon nitride film is modified in a direction parallel to the film. A portion of the thin film with increased thickness is used as a sensor upon which a probe is disposed, and over which a sample-containing solution is caused to flow. The binding between the probe and biochemical sample is detected based upon the change of the intensity of reflected light.
摘要翻译：一种简单方便的传感器和测量装置，利用光学薄膜的光学干涉效应，能够以高通量测量生化物质之间的结合并具有耐碱性。氮化硅的光学薄膜设置在硅衬底的第一表面和后表面上，并且氮化硅膜的厚度在与膜平行的方向上被改变。使用具有增加厚度的薄膜的一部分用作传感器，在其上设置探针，并使含有样品的溶液流过。基于反射光强度的变化来检测探针和生化样品之间的结合。

28. 发明授权

US07250863B2 Transponder and a sensing system using the transponder 有权
标题翻译：应答器和使用转发器的传感系统
公开(公告)号：US07250863B2
公开(公告)日：2007-07-31
申请号：US11036011
申请日：2005-01-18
申请人： Ryo Nemoto , Tadashi Oonishi , Kazuki Watanabe , Yoshiaki Yazawa , Yasushi Goto , Hiroshi Yoshigi
发明人： Ryo Nemoto , Tadashi Oonishi , Kazuki Watanabe , Yoshiaki Yazawa , Yasushi Goto , Hiroshi Yoshigi
IPC分类号： G08B13/14
CPC分类号： G06K19/0717 , G06K19/0723
摘要： A measuring system enabled to simultaneously start measurement by a plurality of transponders by communication between a reader/writer and a plurality of transponders each with a built-in sensor is to be provided. In addition to an identifier SID intrinsic to a sensor and a chip identifier TID intrinsic to a transponder chip, a unique identifier UID combining the sensor SID and the chip TID is provided in each transponder. A reader/writer, in designating a transponder and transmitting a measurement command to it, invalidates the chip TID out of the UID of each transponder, validates only information regarding a sensor function, and transmits measurement commands including action commands unique to each type of sensor.
摘要翻译：提供一种能够通过读取器/写入器和多个具有内置传感器的转发器之间的通信由多个转发器同时开始测量的测量系统。除了传感器固有的标识符SID和应答器芯片固有的芯片标识符TID之外，在每个应答器中提供组合传感器SID和芯片TID的唯一标识符UID。读写器在指定应答器并向其发送测量命令时，使每个应答器的UID中的芯片TID无效，仅验证关于传感器功能的信息，并且发送包括每种类型的传感器唯一的动作命令的测量命令。

29. 发明申请

US20070007546A1 Semiconductor gas sensor and method for manufacturing the same 审中-公开
标题翻译：半导体气体传感器及其制造方法
公开(公告)号：US20070007546A1
公开(公告)日：2007-01-11
申请号：US11476682
申请日：2006-06-29
申请人： Yasushi Goto , Toshiyuki Mine , Koichi Yokosawa
发明人： Yasushi Goto , Toshiyuki Mine , Koichi Yokosawa
IPC分类号： H01L29/74
CPC分类号： G01N27/4141 , G01N33/0047 , G01N33/005
摘要： The present invention provides a manufacturing method enabling suppression of threshold voltage fluctuation without giving any damage to a gate insulating film when a transistor structure is formed at first in a field effect transistor type of gas sensor and then an electrode with a material responsive to a gas to be detected is formed. The gate insulating film is a film stack including at least an SiO2 film and an SRN (Si-rich nitride) film. The SRN film functions as a etching stopper film when the gate insulating film is exposed by etching of an inter-layer insulating film. Pressure resistance of the gate insulating film is preserved with SiO2. An electric charge in the SRN film can be removed with a lower voltage as compare to that required for removing an electric charge in the Si3N4 film, which enables suppression of threshold voltage fluctuation in gas sensor transistors.
摘要翻译：本发明提供一种制造方法，能够在场效应晶体管型气体传感器中首先形成晶体管结构之后抑制阈值电压波动，而不会对栅极绝缘膜造成任何损害，然后是具有响应于气体的材料的电极被形成。栅绝缘膜是至少包括SiO 2膜和SRN（富Si的氮化物）膜的膜堆叠。当栅极绝缘膜通过蚀刻层间绝缘膜而暴露时，SRN膜用作蚀刻停止膜。栅极绝缘膜的耐压性由SiO 2保持。与去除Si 3 N 4 N 3膜中的电荷相比，SRN膜中的电荷可以以较低的电压去除，这使得能够抑制气体传感器晶体管的阈值电压波动。

30. 发明授权

US07105409B2 Semiconductor integrated circuit device and process for producing the same 失效
标题翻译：半导体集成电路器件及其制造方法
公开(公告)号：US07105409B2
公开(公告)日：2006-09-12
申请号：US10899119
申请日：2004-07-27
申请人： Takashi Kobayashi , Yasushi Goto , Tokuo Kure , Hideaki Kurata , Hitoshi Kume , Katsutaka Kimura , Syunichi Saeki
发明人： Takashi Kobayashi , Yasushi Goto , Tokuo Kure , Hideaki Kurata , Hitoshi Kume , Katsutaka Kimura , Syunichi Saeki
IPC分类号： H01L21/336
CPC分类号： H01L27/11521 , H01L27/115 , H01L29/42328 , H01L29/7881
摘要： A semiconductor integrated circuit device with third gates comprising second conduction type source/drain diffusion layer regions 205 formed first conduction type well 201, floating gates 203b formed on semiconductor substrate 200 through an insulator film 202, control gates 211a formed on floating gates 203b through nitrogen-introduced silicon oxide film 210a and third gates 207a different from the floating gates and the control gates, formed through the semiconductor substrates, the floating gates, the control gates and the insulator film, where the third gates are formed as filled in gaps between the floating gates existing in a vertical direction to word lines and channels and the height of third gates 207a thus formed is made lower than that of floating gates 203b, has improved reduction of memory cell size and operating speed and improved reliability after programming/erasing cycles.
摘要翻译：具有第三栅极的半导体集成电路器件包括形成在第一导电型阱201的第二导电型源极/漏极扩散层区域205，通过绝缘膜202形成在半导体衬底200上的浮置栅极203b，形成在浮动栅极203上的控制栅极211a b通过氮导入氧化硅膜210a和与通过半导体衬底，浮栅，控制栅极和绝缘膜形成的浮栅和控制栅极不同的第三栅极207a，其中第三栅极形成为填充在垂直方向上存在的浮动栅极与字线和沟道之间的间隙以及如此形成的第三栅极207a的高度低于浮动栅极203b的高度，具有改善的存储单元尺寸和操作速度的降低和改进编程/擦除周期后的可靠性。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式