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21. 发明专利

JPH06260477A SELECTIVE ETCHING METHOD 失效
公开(公告)号：JPH06260477A
公开(公告)日：1994-09-16
申请号：JP7113793
申请日：1993-03-05
申请人： NIPPON DENSO CO
发明人： SAKAKIBARA NOBUYOSHI , MIZUNO NAOHITO , FUJINO SEIJI
IPC分类号： H01L21/306 , B81C1/00 , H01L21/268
摘要： PURPOSE:To perform etching of a high selection ratio at a room temperature by cooling a prescribed area of a material to be worked by making the area to react to a reactive solution after locally heating the prescribed area and again locally heating the prescribed area so that a reaction product can be scattered in the solution. CONSTITUTION:After an Si substrate 10 to be worked is set in a reactive solution, namely, pure water 20 in parallel with the surface of the water 20, a prescribed surface area 11 of the substrate 10 is irradiated with a converged pulsed laser beam 30. As a result, the surface temperature of the substrate 10 rises to about its melting point and an oxidative reaction takes place between the Si in the substrate 10 and water molecules, resulting in SiO2 12. After oxidizing the prescribed area, the substrate 10 is cooled. Then the oxidized part 12 is again irradiated with the pulsed laser beam 30 in the water 20. As a result, the SiO2 film 12 makes thermal expansion and the film 12 is stripped off from the substrate 10 and scattered in the water 20. When the stripping off and scattering process is repeated, etching can be performed at a high selection ratio.

22. 发明专利

JPH0587030B2 失效
公开(公告)号：JPH0587030B2
公开(公告)日：1993-12-15
申请号：JP16478185
申请日：1985-07-25
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO , SAKAKIBARA TOSHIO , SAKAKIBARA NOBUYOSHI , IWASAKI YUTAKA
IPC分类号： H01L21/8247 , H01L29/78 , H01L29/788 , H01L29/792

23. 发明专利

JPH0577188B2 失效
公开(公告)号：JPH0577188B2
公开(公告)日：1993-10-26
申请号：JP6826485
申请日：1985-03-29
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO , SAKAKIBARA TOSHIO , SAKAKIBARA NOBUYOSHI
IPC分类号： H01L21/8247 , H01L29/788 , H01L29/792

24. 发明专利

JPH04293256A MANUFACTURE OF SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPH04293256A
公开(公告)日：1992-10-16
申请号：JP5759091
申请日：1991-03-22
申请人： NIPPON DENSO CO
发明人： KATAYAMA MASAYUKI , OSHIMA HISAZUMI , SAKAKIBARA NOBUYOSHI
IPC分类号： H01L23/522 , H01L21/768
摘要： PURPOSE:To form a multilayer interconnection structure by removing the insulating material on the surface of an underneath layer exposed in an interlayer connecting hole for filling the hole with a conductive material by simpler method. CONSTITUTION:An Si substrate 1 is coated with a layer insulating film 3 through the intermediary of a lower Al wiring layer 2 arranged on said substrate 1 to make a through hole 3a. Next, this substrate 1 is immersed in a hydrochloric acid solution to remove the insulating material 6 existing on the exposed surface of the lower Al wiring layer 2 in the through hole 3a in a uniform state. In such a state, hexafluorine tungsten is reduced using silane gas to selectively deposit the tungsten 4 in the through hole 3a. During the initial deposition process, the hydrogen contained in the fluorine and the reduced gas contained in a metallic material gas induces the chemical reaction to remove the insulation material 6 such as Al2O3 etc., deposited on said exposed surface. Finally, an upper Al wiring layer 5 is formed on the layer insulating film 3 so that a multilayer interconnection structure may be formed through the intermediary of the conductive material 4 deposited in the through hole 3a.

25. 发明专利

JPH04280637A MANUFACTURE OF THIN FILM TRANSISTOR 失效
公开(公告)号：JPH04280637A
公开(公告)日：1992-10-06
申请号：JP4373291
申请日：1991-03-08
申请人： NIPPON DENSO CO
发明人： TOMINAGA TAKAYUKI , SAKAKIBARA NOBUYOSHI , HASEBE YUJI , HATTORI TADASHI
IPC分类号： H01L23/15 , H01L21/336 , H01L21/77 , H01L21/84 , H01L27/12 , H01L29/78 , H01L29/786
摘要： PURPOSE:To make a thin polycrystallive silicon film transistor having the excellent characteristics thereof even if it is formed on a white glass substrate. CONSTITUTION:A Cr film 11, an SiNx film 12 and a polycrystalline Si film 13 are successively formed on a white glass substrate 10. Later, the polycrystalline Si film 13 is etched waway to be an active layer region while the SiNx film 12 is etched away to be a gate insulating film wider than the film 13 and then the Cr film 11 is also etched away to be a gate film wider than the film 12. Later, source drain electrodes 15a, 15b are formed. Through these procedures, even if the substrate 10 is thermally contracted during the formation step of the polycrystalline Si film 13, the effect of the thermal- contraction can be averted while causing no damage to the interface between the active layer and the gate insulating film.

26. 发明专利

JPH01295463A THIN FILM SEMICONDUCTOR ELEMENT AND MANUFACTURE THEREOF 失效
公开(公告)号：JPH01295463A
公开(公告)日：1989-11-29
申请号：JP12632388
申请日：1988-05-24
申请人： NIPPON SOKEN , NIPPON DENSO CO
发明人： MURAMOTO HIDETOSHI , SAKAKIBARA NOBUYOSHI , FUJINO SEIJI , HATTORI TADASHI , YAMAOKA MASAMI
IPC分类号： H01L29/78 , H01L21/20 , H01L21/31 , H01L21/316 , H01L21/336 , H01L21/762 , H01L27/12 , H01L29/786
摘要： PURPOSE:To improve step coverage property, by covering a semiconductor island having a right-angle edge part with a dummy insulating film having a smoothly curved surface. CONSTITUTION:A semiconductor film 10 which is formed on an insulating substrate 1 is divided by anisotropic etching to form a plurality of semiconductor islands 2. A dummy insulating film 3 having a smoothly curved surface is formed so as to cover at least a plurality of the semiconductor islands 2. Of the dummy insulating film 3, a part covering a functional-element forming surface 2a on the upper surface of each semiconductor island is removed by isotropic etching. Thereafter, a film layer 4 constituting functional elements is overlapped and formed on the upper part. Even if the film layers are overlapped and formed on the exposed element-forming surface 2a and dummy insulating film 3, there is no problem such as the local thinning of the film layers, and the step coverage property is improved.

27. 发明专利

JPS6355942A SEMICONDUCTOR DEVICE 失效
公开(公告)号：JPS6355942A
公开(公告)日：1988-03-10
申请号：JP19970286
申请日：1986-08-26
申请人： NIPPON DENSO CO
发明人： SAKAKIBARA TOSHIO , FUJII TETSUO , YAMANE HIROYUKI , SAKAKIBARA NOBUYOSHI
IPC分类号： H01L21/316 , H01L21/318
摘要： PURPOSE:To prevent the eluation of phosphorus even in case a PSG film is used for an interlayer insulating film land to prevent an effect that is exerted on a Tr by contamination due to heavy metals by a method wherein first and second insulating films are formed in such a way as to envelop the interlayer insulating film holding the interlayer insulating film formed on the surface of a semiconductor between them. CONSTITUTION:An activated region 12, source and drain regions 13 and a field region 14 are formed in and on the surface part of an Si semiconductor substrate 11. A poly Si electrode 15 is formed in a state corresponding to the part of the region 12. A first insulating film 16 consisting of an Si nitride film and an interlayer insulating film 17 consisting of a PSG film are formed on the surface thereof. A second insulating film 18 consisting of an Si nitride film is laminated thereon, the film 18 is coupled integrally with the film 16 at the parts of contact holes 191 and 192 and the film 17 is enveloped with the films 16 and 18. A wiring metal layer 20 is formed in such a way as to connect with the poly Si electrode 15 and the region 13 at the parts of the contact holes 191 and 192 and a passivation film 21 is provided on the surface of the layer 20.

28. 发明专利

JPS6298778A NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE 失效
公开(公告)号：JPS6298778A
公开(公告)日：1987-05-08
申请号：JP23970085
申请日：1985-10-25
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO , SAKAKIBARA TOSHIO , SAKAKIBARA NOBUYOSHI , IWASAKI YUTAKA
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PURPOSE:To eliminate the leak current during detection of the OFF state and to improve the accuracy of detection in the OFF state, by providing either a drain or a source with a thin insulation film (tunnel insulation film) formed between an impurity region and an electrode. CONSTITUTION:A tunnel oxide film 45 is provided between an impurity region 71 in an operating region 31 and an electrode 92. For forming this tunnel oxide film 45, impurity regions 71 and 72 are initially provided and only the surface of the region 71 in the operating region 31 is selectively oxidized before electrodes 91-94 are formed. The tunnel oxide film 45, having certain insulating properties, becomes completely insulating state when a depletion layer is spread between the source and the drain. When there is no depletion layer, however, the tunnel oxide film 45 conducts current and causes no problem for the original purpose of sensing ON or OFF between the source and the drain. Further, no leak current is caused in the detection of OFF, the sensing accuracy in the OFF state is improved.

29. 发明专利

JPS6285468A NONVOLATILE SEMICONDUCTOR MEMORY 失效
公开(公告)号：JPS6285468A
公开(公告)日：1987-04-18
申请号：JP22557385
申请日：1985-10-09
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO , SAKAKIBARA TOSHIO , SAKAKIBARA NOBUYOSHI
IPC分类号： H01L21/8247 , H01L27/115 , H01L29/788 , H01L29/792
摘要： PURPOSE:To improve the integration of an element by providing a capacity increasing portion which extends in a depthwise direction of a substrate to increase a capacity between a control gate and a floating gate. CONSTITUTION:An N-type semiconductor substrate 10, an N-type source 20 and an N-type drain 30 formed separately in a P-well formed on the surface of the substrate 10, a channel region formed between the source 20 and the drain 30, a floating gate 50 covered through an insulating film on the channel region, and a control gate 60 covered through an insulating film above the gate 50 are composed. The gate 50 and the control gate 60 are integrally formed with channel opposed portions covered on the channel regions, and composed of capacity increasing portions 53, 63 extended in a plate shape in the depthwise direction of the channel regions and a channel stopper 70.

30. 发明专利

JPS6225459A NONVOLATILE SEMICONDUCTOR MEMORY DEVICE 失效
公开(公告)号：JPS6225459A
公开(公告)日：1987-02-03
申请号：JP16478185
申请日：1985-07-25
申请人： NIPPON DENSO CO
发明人： FUJII TETSUO , SAKAKIBARA TOSHIO , SAKAKIBARA NOBUYOSHI , IWASAKI YUTAKA
IPC分类号： H01L21/8247 , H01L29/78 , H01L29/788 , H01L29/792
摘要： PURPOSE:To improve the integration density of memory cells by arranging a drain, an operation region, a floating gate, a contreol gate and a source for forming each memory cell in the thicknesswise direction of a semiductor substrate. CONSTITUTION:An n-type buried layer 2 is diffused in a surface layer of a p-type Si substrate 1, an n-type layer 3 is epitaxially grown on the entire surface which includes it, and partitioned by an oxide layer 11 intruded to the substrate 1 corresponding to each meory cell. Then, a groove 33 which arrives to the layer 2 is opened at the layer 3, the exposed surface of the layer 3 is coated with oxide films 41, 42, and an n type polycrystalline Si layer 50 is accumulated on the entire surface while burying the groove 35. Thereafter, floaing gates 51, 52 made of the layer 50 remain vertically only in the goove 35, the other is removed by etching, the second layer polycrystalline Si layer 60 is partly accumulated on the entire surface in parallel with the gates 51, 52, and the layer 60 of the parallel portion is used a control gates 61, 62. Then, n type regions 71, 72 to become source or drain are diffused between the gates.

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