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21. 发明申请

US20060289849A1 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film, and semiconductor device 审中-公开
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜和半导体器件
公开(公告)号：US20060289849A1
公开(公告)日：2006-12-28
申请号：US11512968
申请日：2006-08-29
申请人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
发明人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L29/04
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The invention includes a semiconductor device. Specifically provided is a semiconductor device comprising a porous film therein, the porous film being formable by a composition comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1) : RnSi(OR′)4-n. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.
摘要翻译：本发明包括半导体器件。具体提供的是其中包含多孔膜的半导体器件，多孔膜可通过包含表面活性剂，非质子极性溶剂和包含由一个或多个由下列物质表示的硅烷化合物的水解和缩合形成的聚合物（1 ）：R n Si（OR'）4-n 还提供了一种制造多孔膜的方法，包括以下步骤：施加所述组合物以形成膜，干燥膜并通过除去所述表面活性剂将干燥的膜转化为多孔膜。进一步提供由多孔膜形成用组合物得到的多孔膜。

22. 发明授权

US07119354B2 Composition for forming porous film, porous film and method for forming the same, interlevel insulator film 失效
标题翻译：用于形成多孔膜的组合物，多孔膜及其形成方法，层间绝缘膜
公开(公告)号：US07119354B2
公开(公告)日：2006-10-10
申请号：US10810360
申请日：2004-03-26
申请人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
发明人： Fujio Yagihashi , Yoshitaka Hamada , Hideo Nakagawa , Masaru Sasago
IPC分类号： H01L47/00
CPC分类号： H01L21/02126 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： Provided is a coating liquid which can easily form a porous film having desirably controlled thickness by the method used for a usual semiconductor process, and having an excellent mesopore channel structure. Specifically provided is a composition for forming porous film comprising a surfactant, an aprotic polar solvent and a solution comprising a polymer formed by hydrolysis and condensation of one or more silane compounds represented by foramula (1): RnSi(OR′)4-n. Also provided is a method for manufacturing a porous film comprising steps of applying said composition so as to form a film, drying the film and transforming the dried film to a porous film by removing said surfactant. The porous film obtained from the composition for forming porous film is further provided.
摘要翻译：本发明提供一种可以通过通常的半导体工艺使用的方法容易地形成具有期望的控制厚度的多孔膜并具有优异的中孔通道结构的涂布液。具体地提供了一种用于形成多孔膜的组合物，其包含表面活性剂，非质子极性溶剂和包含通过水解和缩合由（1）表示的一种或多种硅烷化合物形成的聚合物的溶液：RnSi（OR'）4 -n 。还提供了一种制造多孔膜的方法，包括以下步骤：施加所述组合物以形成膜，干燥膜并通过除去所述表面活性剂将干燥的膜转化为多孔膜。进一步提供由多孔膜形成用组合物得到的多孔膜。

23. 发明申请

US20060040206A1 Resist composition and patterning process 失效
公开(公告)号：US20060040206A1
公开(公告)日：2006-02-23
申请号：US11205980
申请日：2005-11-04
申请人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda , Toshihiko Fujii
发明人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda , Toshihiko Fujii
IPC分类号： G03C1/76
CPC分类号： G03F7/0757 , G03F7/0045 , Y10S430/108
摘要： A resist composition is provided comprising a silicone resin, a photoacid generator, a nitrogen-containing organic compound, and a solvent. The silicone resin is obtained through cohydrolytic condensation of a mixture of three silane monomers containing an organic group having a hydroxyl group and having at least 3 fluorine atoms, in total, on a proximate carbon atom, an organic group having a carboxyl group protected with an acid labile group, and a lactone ring-bearing organic group, respectively. The resist composition has satisfactory resolution and overcomes the problem of a low selective etching ratio between resist film and organic film during oxygen reactive etching.

24. 发明申请

US20050165197A1 Porous-film-forming composition, preparation method of the composition, porous film and semiconductor device 有权
标题翻译：多孔膜形成组合物，组合物的制备方法，多孔膜和半导体器件
公开(公告)号：US20050165197A1
公开(公告)日：2005-07-28
申请号：US11041780
申请日：2005-01-24
申请人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
发明人： Tsutomu Ogihara , Fujio Yagihashi , Yoshitaka Hamada , Takeshi Anaso , Motoaki Iwabuchi , Masaru Sasago , Hideo Nakagawa
IPC分类号： C04B38/00 , C01B33/12 , C08G77/06 , C08G77/08 , C09D183/02 , C09D183/04 , H01L21/316 , H01L21/768 , C08G77/20
CPC分类号： H01L21/02126 , C08G77/06 , C08G77/08 , C09D183/02 , C09D183/04 , H01L21/02203 , H01L21/02216 , H01L21/02282 , H01L21/31695
摘要： The invention provides a coating solution for forming a porous film having excellent mechanical strength and dielectric properties and for easily forming a film with a freely controlled film thickness in an ordinarily employed method in semiconductor process. More specifically, provided are a method for preparing a porous-film-forming composition comprising steps of preparing polysiloxane, silica or zeolite particles (Component A), imparting crosslinkability to Component A, and temporarily terminating the crosslinkability; and a porous-film-forming composition obtainable in this method. In addition, provided is a method of forming a porous film comprising steps of preparing a porous-film-forming composition by preparing Component A, imparting crosslinkability to Component A and adding a crosslinkability inhibitor to temporarily terminate the crosslinkability; applying the porous-film-forming composition onto a substrate to form a film, drying the film, crosslinking the particles along with removing the crosslinkability inhibitor by heating the dried film.
摘要翻译：本发明提供一种用于形成具有优异的机械强度和介电性能的多孔膜的涂布溶液，并且在半导体工艺中通常采用的方法容易地形成具有自由控制的膜厚度的膜。更具体地说，提供了制备多孔膜形成组合物的方法，其包括制备聚硅氧烷，二氧化硅或沸石颗粒（组分A）的步骤，赋予组分A交联性，并暂时终止交联性; 和通过该方法得到的多孔膜形成组合物。此外，提供了形成多孔膜的方法，其包括通过制备组分A制备多孔膜形成组合物，赋予组分A交联性并添加交联性抑制剂以暂时终止交联性的步骤; 将多孔膜形成组合物施加到基材上以形成膜，干燥膜，使颗粒交联，同时通过加热干燥膜除去交联性抑制剂。

25. 发明授权

US5670259A Water soluble pyrolytic paint 失效
标题翻译：水溶性热解漆
公开(公告)号：US5670259A
公开(公告)日：1997-09-23
申请号：US581202
申请日：1995-12-29
申请人： Yoshitaka Hamada , Yo Kameyama
发明人： Yoshitaka Hamada , Yo Kameyama
IPC分类号： C09D1/00 , C09D5/00 , C09D1/02 , C09D5/26
CPC分类号： C09D5/00 , C09D1/00 , Y10T428/31678 , Y10T428/31692
摘要： The present invention provides a water soluble, inorganic pyrolytic paint which, when dried to form a paint layer, generates heat from a whole surface of the paint layer by supplying electric current therethrough. The pyrolytic paint is prepared by mixing and stirring together a mixture of metal carbide, metal oxide, metal nitride, metal boride and metal silicide, additive metal and a solvent containing sodium citrate, ethylene glycol, silicic acid anhydride and/or sodium silicate and water. When painted on a substrate surface and dried, the silicon dioxide component thereof forms insoluble macromolecular lands "L" by the condensation reaction of silanol base, which form a stable paint layer, and metal particles M thereof bridge the lands L and are supported thereby to provide uniform electric resistance throughout a surface of the paint layer, so that the paint layer can generate heat uniformly throughout the paint layer when electric current is supplied therethrough.
摘要翻译：本发明提供了一种水溶性无机热解涂料，其在干燥形成涂料层时，通过提供电流从涂料层的整个表面产生热量。通过将金属碳化物，金属氧化物，金属氮化物，金属硼化物和金属硅化物，添加金属和含有柠檬酸钠，乙二醇，硅酸酐和/或硅酸钠和水的溶剂的混合物混合并搅拌来制备热解涂料。当涂在基材表面上并干燥时，其二氧化硅组分通过形成稳定涂料层的硅烷醇基的缩合反应形成不溶的大分子界面“L”，并且其金属颗粒M桥接在焊盘L上并被支撑，从而被在涂层的整个表面上提供均匀的电阻，使得当通过其供应电流时，涂层可以在整个涂料层中均匀地产生热量。

26. 发明授权

US4950726A Organopolysiloxane compound having liquid-crystalline phase 失效
标题翻译：具有液晶相的有机聚硅氧烷化合物
公开(公告)号：US4950726A
公开(公告)日：1990-08-21
申请号：US416341
申请日：1989-10-03
申请人： Hiroshi Yoshioka , Yoshitaka Hamada , Masanao Kamei
发明人： Hiroshi Yoshioka , Yoshitaka Hamada , Masanao Kamei
IPC分类号： C08G77/38 , C08G77/50 , C09K19/40
CPC分类号： C09K19/408 , C08G77/50
摘要： A novel organopolysiloxane compound is disclosed which is capable of being cured by crosslinking and exhibiting a liquid-crystalline phase even in a crosslinked condition. The organopolysiloxane has mesogenic groups bonded to the silicon atoms such as --CH.sub.2).sub.3 O--Pn--CO--O--Pn--CN; --CH.sub.2).sub.3 O--CH.sub.2).sub.3 O--Pn--CO--O--Pn--CN; --CH.sub.2).sub.3 O--Pn--CO--O--Pn--F; and --CH.sub.2).sub.3 O--Pn--CO--O--Pn--O--CH.sub.3, in which the symbol Pn denotes a 1,4-phenylene group, and hydrolyzable groups pertaining to the crosslinking reaction.
摘要翻译：公开了一种新颖的有机聚硅氧烷化合物，其能够通过交联固化，甚至在交联状态下也呈液晶相。有机聚硅氧烷具有与硅原子键合的介晶基团，例如-CH 2）3 O-Pn-CO-O-Pn-CN; -CH 2）3 -O-CH 2）3 O-Pn-CO-O-Pn-CN; -CH 2）3 O-Pn-CO-O-Pn-F; 和-CH 2）3 O-Pn-CO-O-Pn-O-CH 3，其中符号Pn表示1,4-亚苯基，以及与交联反应有关的可水解基团。

27. 发明授权

US4794243A Integrated circuit card with increased number of connecting terminals 失效
标题翻译：集成电路卡，连接端子数量增加
公开(公告)号：US4794243A
公开(公告)日：1988-12-27
申请号：US147570
申请日：1988-01-19
申请人： Yoshitaka Hamada
发明人： Yoshitaka Hamada
IPC分类号： B42D15/10 , G06K19/07 , G06K19/077 , H05K1/11 , G06K19/06
CPC分类号： H01R23/70 , G06K19/07743 , H05K1/117
摘要： An integrated circuit card for use in an electronic arrangement when inserted into a receiving slot of the arrangement includes a card body having a flat and rectangular shape, a printed circuit board mounted on the card body, and an integrated circuit chip carried on the circuit board. The circuit board has a plurality of rows of connecting terminals which are arranged along an edge of the rectangular shape of the card body for establishing electrical connections with mating connecting terminals of a receiving slot of the electronic arrangement into which slot the card is inserted. The circuit board also has connecting wires printed thereon for electrically connecting circuitry of the chip with the rows of connecting terminals.
摘要翻译：当插入到该装置的接收槽中时用于电子装置的集成电路卡包括具有扁平和矩形形状的卡体，安装在卡体上的印刷电路板和承载在电路板上的集成电路芯片。电路板具有沿着卡体的矩形形状的边缘布置的多排连接端子，用于建立与电子装置的接收槽的配合连接端子的电连接，插入插槽的插槽中。电路板还具有印刷在其上的连接线，用于将芯片的电路与连接端子排电连接。

28. 发明授权

US08153836B2 Silsesquioxane compound mixture, hydrolyzable silane compound, making methods, resist composition, patterning process, and substrate processing 有权
标题翻译：倍半硅氧烷复合混合物，可水解硅烷化合物，制备方法，抗蚀剂组合物，图案化工艺和基材加工
公开(公告)号：US08153836B2
公开(公告)日：2012-04-10
申请号：US11860872
申请日：2007-09-25
申请人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda
发明人： Mutsuo Nakashima , Yoshitaka Hamada , Katsuya Takemura , Kazumi Noda
IPC分类号： C08F7/21 , C08F7/08 , G03F7/075
CPC分类号： G03F7/0757 , C08G77/045 , C08G77/06 , G03F7/0397 , Y10S430/106
摘要： In a mixture of silsesquioxane compounds comprising silsesquioxane units having a side chain including a direct bond between a silicon atom and a norbornane skeleton and having a degree of condensation of substantially 100%, a dimethylene chain of the norbornane skeleton remote from the silicon bonded side is substituted with at least one substituent group other than hydrogen, and an isomer having a bulkier substituent group on the dimethylene chain at an exo position is present in a higher proportion.
摘要翻译：在包含具有包含硅原子和降冰片烷骨架之间的直接键合并具有大致100％的缩合度的侧链的倍半硅氧烷单元的硅倍半氧烷化合物的混合物中，远离硅键合侧的降冰片烷骨架的二亚甲基链是被除了氢以外的至少一个取代基取代，并且在外显位置上在二亚甲基链上具有较大取代基的异构体以更高的比例存在。

29. 发明授权

US07981815B2 Semiconductor device producing method and substrate processing apparatus 有权
标题翻译：半导体装置的制造方法和基板处理装置
公开(公告)号：US07981815B2
公开(公告)日：2011-07-19
申请号：US12087779
申请日：2007-07-19
申请人： Hironobu Miya , Kazuhiro Hirahara , Yoshitaka Hamada , Atsuhiko Suda
发明人： Hironobu Miya , Kazuhiro Hirahara , Yoshitaka Hamada , Atsuhiko Suda
IPC分类号： H01L21/31
CPC分类号： H01L21/3141 , C23C16/40 , C23C16/45527 , C23C16/45546 , H01L21/02164 , H01L21/02181 , H01L21/02274 , H01L21/0228 , H01L21/31612 , H01L21/31645
摘要： Disclosed is a producing method or a semiconductor device including: loading at least one substrate into a processing chamber; forming a metal oxide film or a silicon oxide film on a surface of the substrate by repeatedly supplying a metal compound or a silicon compound, each of which is a first material, an oxide material which is a second material including an oxygen atom, and a hydride material which is a third material, into the processing chamber predetermined times; and unloading the substrate from the processing chamber.
摘要翻译：公开了一种制造方法或半导体装置，其包括：将至少一个基板装载到处理室中; 通过重复地供给作为第一材料的金属化合物或硅化合物，作为包含氧原子的第二材料的氧化物材料，在基板的表面上形成金属氧化物膜或氧化硅膜，作为第三材料的氢化物材料预定时间进入处理室; 并从处理室卸载基板。

30. 发明申请

US20100233482A1 Organic silicon oxide fine particles and preparation method thereof, porous film-forming composition, porous film and formation method thereof, and semiconductor device 审中-公开
标题翻译：有机氧化硅微粒及其制备方法，多孔膜形成组合物，多孔膜及其形成方法以及半导体器件
公开(公告)号：US20100233482A1
公开(公告)日：2010-09-16
申请号：US12789902
申请日：2010-05-28
申请人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
发明人： Yoshitaka Hamada , Fujio Yagihashi , Takeshi Asano , Hideo Nakagawa , Masaru Sasago
IPC分类号： B32B1/00 , C09K3/00
CPC分类号： H01B3/10 , Y10T428/25 , Y10T428/259 , Y10T428/2991 , Y10T428/2993 , Y10T428/2995 , Y10T428/31663
摘要： Provided are organic silicon oxide fine particles which can be formed into a porous film having a dielectric constant and mechanical strength expected as a high-performance porous insulating film and having excellent chemical stability, and a preparation method thereof. Described specifically, provided are an organic silicon oxide fine particle comprising a core containing at least an inorganic silicon oxide or an organic silicon oxide and a shell containing at least an organic silicon oxide and being formed around the core by using shell-forming hydrolyzable silane in the presence of a basic catalyst; wherein of silicon atoms constituting the core or the shell, a ratio (T/Q) of a number (T) of silicon atoms having at least one bond directly attached to a carbon atom to a number (Q) of silicon atoms having all of four bonds attached to an oxygen atom is greater in the shell than in the core; and wherein the shell-forming hydrolyzable silane comprise at least a hydrolyzable silane compound having two or more hydrolyzable-group-having silicon atoms bound to each other via a carbon chain or via a carbon chain containing one silicon atom between some carbon atoms.
摘要翻译：提供可以形成具有期望作为高性能多孔绝缘膜的介电常数和机械强度并且具有优异的化学稳定性的多孔膜的有机氧化硅微粒及其制备方法。具体地说，提供了一种有机氧化硅微粒，其包含至少含有无机氧化硅或有机氧化硅的芯和至少含有有机氧化硅的壳，并且通过使用壳形成可水解硅烷在芯周围形成存在碱性催化剂; 其中构成核或壳的硅原子中，具有至少一个直接连接到碳原子上的键的硅原子数（T）与（Q）的硅原子数（Q）的比（T / Q）附着在氧原子上的四个键在壳中比在核中大; 并且其中所述成壳可水解硅烷至少包含具有两个或多个可水解基团的硅原子的可水解硅烷化合物，其通过碳链彼此结合，或通过在一些碳原子之间含有一个硅原子的碳链。

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